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1.
利用Monte Carlo(MC)方法模拟研究了薄膜生长的初始阶段岛的形貌和岛的尺寸与基底温度和入射粒子剩余能量之间的关系.模型中考虑了粒子的沉积、吸附粒子的扩散和蒸发等过程.结果表明当基底温度从200K变化到260K时,岛的形貌经历了一个从分散生长逐渐过渡到分形生长的过程,并且在较低温度(200K)下,随入射粒子剩余能量的增加,岛的形貌也经历了同样的变化过程.进一步研究证明,随着基底温度的升高或入射粒子剩余能量的增加,沉积粒子的扩散能力显著增强,从而使岛的形貌发生了改变.  相似文献   

2.
利用Monte Carlo(MC)方法模拟研究了薄膜生长的初始阶段岛的形貌和岛的尺寸与基底温度和入射粒子剩余能量之间的关系.模型中考虑了粒子的沉积、吸附粒子的扩散和蒸发等过程.结果表明当基底温度从200K变化到260K时,岛的形貌经历了一个从分散生长逐渐过渡到分形生长的过程,并且在较低温度(200K)下,随入射粒子剩余能量的增加,岛的形貌也经历了同样的变化过程.进一步研究证明,随着基底温度的升高或入射粒子剩余能量的增加,沉积粒子的扩散能力显著增强,从而使岛的形貌发生了改变.  相似文献   

3.
沉积粒子能量对薄膜早期生长过程的影响   总被引:5,自引:0,他引:5       下载免费PDF全文
陈敏  魏合林  刘祖黎  姚凯伦 《物理学报》2001,50(12):2446-2451
利用Monte Carlo(MC)模型研究了能量粒子对薄膜生长的初始阶段岛膜的形貌和岛的尺寸的影响,沉积粒子的能量范围为:0—0.7eV.在模型中考虑了原子沉积、吸附原子扩散和蒸发等过程,并详细考虑了临近和次临近原子的影响.结果表明,在所采用的参量范围内不同的基底温度情况下,能量粒子的影响有很大的区别.低基底温度情况下,沉积粒子强烈地影响着薄膜的生长过程中,岛膜的形貌、数量和尺寸随能量粒子的能量增加而有很大的变化.分析表明,这些变化都是由于能量粒子的介入使得表面吸附粒子的扩散能力增强所致 关键词: 薄膜生长 Monte Carlo方法 扩散  相似文献   

4.
薄膜生长的随机模型   总被引:16,自引:0,他引:16       下载免费PDF全文
利用Monte Carlo模型研究了薄膜生长初始阶段岛的形貌与基底温度之间的关系,同时还研究了它们与汽相粒子入射剩余能量之间的关系.模型中考虑了三种动力学过程:粒子入射、吸附粒子扩散和粒子脱附,与以前薄膜生长模型的不同之一在于把入射过程看作独立于其他过程,而扩散和脱附过程是相互关联的.结果表明随基底温度的升高,岛的形貌经历了一个从分散生长、分形生长到凝聚生长的变化过程.低温下随汽相粒子入射和剩余能量增加,岛的形貌也经历了同样的变化过程. 关键词:  相似文献   

5.
利用Monte Carlo(MC)方法模拟研究了四方和六方晶格基底上薄膜生长的初始阶段岛的形貌和岛的尺寸与基底温度和入射粒子剩余能量之间的关系.模型中考虑了粒子的沉积、吸附粒子的扩散和蒸发等过程.结果表明,基底晶格结构对薄膜生长具有明显影响.当基底温度为300K、入射粒子剩余能量为0时,四方晶格基底上薄膜的生长已经呈现明显的凝聚生长,随着基底温度或入射粒子剩余能量的增加,岛的数目变少、岛的平均尺寸变大.对于六方晶格基底,当入射粒子剩余能量为0、温度从300 K升高到350 K时,岛的形貌从分散生长向分形生长转变;当基底温度为300 K、入射粒子剩余射能量从0上升到0.05 eV时,岛由分散生长向分形生长转变.  相似文献   

6.
利用Monte Carlo(MC)方法模拟研究了四方和六方晶格基底上薄膜生长的初始阶段岛的形貌和岛的尺寸与基底温度和入射粒子剩余能量之间的关系. 模型中考虑了粒子的沉积、吸附粒子的扩散和蒸发等过程. 结果表明,基底晶格结构对薄膜生长具有明显影响. 当基底温度为300K、入射粒子剩余能量为0时,四方晶格基底上薄膜的生长已经呈现明显的凝聚生长,随着基底温度或入射粒子剩余能量的增加,岛的数目变少、岛的平均尺寸变大. 对于六方晶格基底,当入射粒子剩余能量为0、温度从300K升高到350K时,岛的形貌从分散生长向分形生长转变;当基底温度为300K、入射粒子剩余射能量从0上升到0.05eV时,岛由分散生长向分形生长转变.  相似文献   

7.
动力学晶格蒙特卡洛方法模拟Cu薄膜生长   总被引:3,自引:1,他引:2  
利用动力学晶格蒙特卡洛方法模拟了Cu薄膜在Cu(100)面上的三维生长过程。模型中考虑了四个动力学过程:原子沉积、增原子迁移、双原子迁移和台阶边缘原子迁移,各动力学过程发生的概率由多体势函数确定。讨论了基底温度、沉积速率及原子覆盖率对Cu原子迁移、成核和表面岛生长等微观生长机制的影响;获得了Cu薄膜的表面形貌图并计算了表面粗糙度。模拟结果表明,随基底温度升高或沉积速率下降,岛的平均尺寸增大,数目减少,形状更加规则。低温时,Cu薄膜表现为分形的离散生长,高温时,Cu原子迁移能力增强形成密集的岛。Cu薄膜表面粗糙度随着基底温度的升高而迅速减小;当基底温度低于某一临界温度时,表面粗糙度随原子覆盖率或沉积速率的增大而增大;当基底温度超过临界温度时,表面粗糙度随原子覆盖率或沉积速率的变化很小,基本趋于稳定。  相似文献   

8.
利用Monte Carlo方法研究了基底显微结构对薄膜生长的影响. 对不同显微结构基底上薄膜生长的初始阶段岛的形貌和尺寸与薄膜覆盖度和入射粒子沉积速率之间的关系进行了模拟和分析. 模型中考虑了粒子沉积、吸附粒子扩散和蒸发等过程. 结果表明,基底显微结构对薄膜生长具有明显影响. 当沉积温度为300K、沉积速率为0.005ML/s(Monolayer/second,简称ML/s)、覆盖度为0.05ML时,四方基底上薄膜生长呈现凝聚生长. 随着覆盖度增加,岛的尺寸变大,岛的数目减少. 而对于六方基底,当覆盖度从0.05ML变化到0.25ML时,薄膜生长经历了一个从分散生长过渡到分形生长的过程. 无论是四方还是六方基底,随着沉积速率的增加,岛的形貌由少数聚集型岛核分布状态向众多各自独立的离散型岛核分布状态过渡.  相似文献   

9.
非均匀基底上三维薄膜生长的模拟研究   总被引:2,自引:0,他引:2       下载免费PDF全文
陆杭军  吴锋民 《物理学报》2006,55(1):424-429
考虑原子在基底表面的扩散、沿岛周界的扩散和不同层间的扩散以及非均匀基底上表面吸附能分布的各向异性,建立起非均匀基底表面上原子扩散和三维薄膜生长的动力学蒙特卡罗模型.模拟得到在不同生长条件下出现的层状生长、岛状生长和混合生长三种生长模式和相应的多层薄膜生长形貌图.通过统计三维薄膜中原子在各层的分布,计算薄膜的表面粗糙度,得到薄膜生长模式与生长条件之间的关系. 关键词: 薄膜生长 非均匀基底 动力学蒙特卡罗模拟  相似文献   

10.
利用Monte Carlo(MC)方法,模拟研究了六方晶格基底上薄膜生长的初始阶段岛的形貌和岛的尺寸与薄膜覆盖度以及入射粒子沉积速率之间的关系. 结果表明在基底温度为300K时,岛的形貌主要表现为分形生长,随着薄膜覆盖度的增加,岛的分形枝簇变大,岛的数目不断减少. 在同样的温度下,随着入射粒子沉积速率的增大,薄膜表面的形貌逐步由少数聚集型岛核分布状态向众多各自独立的离散型岛核分布状态过渡. 进一步研究得出,薄膜覆盖度和入射粒子沉积速率对粒子扩散能力的影响最终导致岛的形貌发生了改变.  相似文献   

11.
系统研究了核磁共振碳谱和化学位移规律及其定量构谱关系(QSSR).本文研究了一组十元素分子路径指数矢量VPM,并发现它与烷烃化学位移和CCS有良好线性相关性.采用多元线性回归进行准确估计与预测,结果优良.  相似文献   

12.
A parameter-free, nonperturbative calculation of the ΔNγ electromagnetic transition amplitudes GM*(q2), GE*(q2), and the resonant multipole ratio REM(q2)≡E1+3/2(q2)/M1+3/2(q2) is performed in terms of the well-known nucleon isovector Sachs form factor GMV. Our methods are fully relativistic with conservation of the electromagnetic current guaranteed. We find that GM*(q2) decreases more rapidly than the nucleon dipole form factor when −q21 GeV2/c2 and that REM(q2) remains small even for very high four-momentum transfer implying that the perturbative QCD prediction REM(q2)→1 is purely asymptotic and is valid only for extremely high |q2|.  相似文献   

13.
《Physica A》1995,220(3-4):585-598
An antiferromagnetic equivalent-neighbour Heisenberg interaction Hi between impurity spins is added to the reduced s-d Hamiltonian Hr previously introduced by simplifying the Kondo s-d exchange Hamiltonian HK. Asymptotic mean-field theory is developed for Hr + Hi, in the presence and absence of external magnetic field, and applied to (La1−xCex)Al2 alloys. Specific heat ci(T) and zero-field susceptibility χi(0,T) curves for (La1−xCex)Al2 are depicted. The coupling constants of Hr + Hi and conduction bandwidth are adjusted so that Tc temperatures for x = 0.2, 0.1 are equal to the experimental values. ci(T) exhibits a jump at Tc and is decreasing for T < Tc. χi(0,T) has a first order pole at Tc which corresponds to the maximum of experimental susceptibility and χi(0,0) > 0. These results improve those obtained earlier on the grounds of Hr theory.  相似文献   

14.
We study the nonresonant three-body decays of B+D(*)−sK+π+ and BdDs(*)−K0π+. We find that these decays can provide the information on the time-like form factors of D(*)sK. We also explicitly investigate BdDs(*)−K*+ decays by discriminating the nonresonant contributions with the unknown D(*)s wave functions being fixed by the measured mode of BdDsK+.  相似文献   

15.
吴祖懿 《波谱学杂志》1986,3(2):147-157
本文提出了予测稠苯芳杂环及其烷基链上质子化学位移的计算方法。 将稠苯芳杂环化合物用凯库勒式表示,计算式为为需考虑的苯环内的乙烯基效应。σmi,ci为各苯环的环流效应。σ1,Hc为各芳杂环的屏蔽效应,对杂环上质子它就是该单独芳杂环上相应质子的δ值,对苯环上质子要将它分解为各结构因素的效应,即:σ1,He=(1/2)d-1δx=y(或σz)+σc-c·σm,H. σx-yσz为杂原子或其基团的屏蔽效应,σc=c为存在于芳杂环中的乙烯基的效应,σm,Hc为芳杂环的环流效应,d为对不同质子所考虑的键数。有取代基时需考虑取代基的效应。计算环上烷基质子的公式为:δ=σp,CH3+ασc,CH3+βσt,CH3+σl,G σl,G为稠苯芳杂环基的某级效应。  相似文献   

16.
The specific retention volumes, , for adsorption of 21 solute probes on the solid surface of cellulose acetate butyrate (CAB) were determined in the temperature range 343.15 to 403.15 K by inverse gas chromatography (IGC). The weight fraction activity coefficients, , and Flory–Huggins interaction parameters, , were evaluated using . Both and values decreased with increase of temperature in all the solutes. Further, the values increased with increase of chain length in n-alkanes, but in the case of alcohols the trend was reversed. values were less than 0.5 in polar solutes and greater than 0.5 in 1-alkanes and alcohols. The Hansen solubility parameters (HSP) were calculated by relating with the cohesive energy of adsorption of the solutes on the surface of CAB. The adsorption model proposed by Snyder and Karger was used to determine the HSP for the CAB. The dispersive, , polar, , and hydrogen bonding components of HSP decreased with increase of temperature and the relative error associated with these parameters increased with increase of temperature. The characterization of the solid surface of CAB in terms of the three solubility parameter components was analyzed and is discussed.  相似文献   

17.
张典承  张颍  李晓康  贾凤东  李若虹  钟志萍 《物理学报》2018,67(18):183102-183102
本文在多通道量子亏损理论框架下,利用相对论多通道理论,计算了铥原子收敛于4f132F7/2o)6s(7/2,1/2)4o和4f132F7/2o)6s(7/2,1/2)3o的三个偶宇称里德伯系列.通过将计算结果与美国国家标准与技术研究院数据进行比较,展示了两种类型的电子关联效应:1)里德伯系列之间的相互作用,导致里德伯系列的能级出现整体偏移;2)一个孤立的干扰态镶嵌在一个里德伯系列中,破坏了该里德伯系列能级的规则性.  相似文献   

18.
The effects of an electric field on the interband transitions in InxGa1−xAs/InyAl1−yAs coupled step quantum wells have been investigated both experimentally and theoretically. A InxGa1−xAs/InyAl1−yAs coupled step quantum well sample consisted of the two sets of a 50 Å In0.53Ga0.47As shallow quantum well and a 50 Å In0.65Ga0.35As deep step quantum well bounded by two thick In0.52Al0.48As barriers separated by a 30 Å In0.52Al0.48As embedded potential barrier. The Stark shift of the interband transition energy in the InxGa1−xAs/InyAl1−yAs coupled step quantum well is larger than that of the single quantum well, and the oscillator strength in the InxGa1−xAs/InyAl1−yAs coupled step quantum well is larger than that in a coupled rectangular quantum well. These results indicate that InxGa1−xAs/InyAl1−yAs coupled step quantum wells hold promise for potential applications in optoelectron devices, such as tunable lasers.  相似文献   

19.
We review the construction of the multiparametric quantum group ISOq,r(N) as a projection from SOq,r (N + 2) and show that it is a bicovariant bimodule over SOq,r(N). The universal enveloping algebra Uq,r(iso(N)), characterized as the Hopf algebra of regular functionals on ISOq,r(N), is found as a Hopf subalgebra of Uq,r(so(N + 2)) and is shown to be a bicovariant bimodule over Uq,r(so(N)).

An R-matrix formulation of Uq,r(iso(N)) is given and we prove the pairing Uq,r(iso(N)) — ISOq,r(N)). We analyze the subspaces of Uq,r(iso(N)) that define bicovariant differential calculi on ISOq,r(N).  相似文献   


20.
Abstract

Among simple ?-graded Lie superalgebras of polynomial growth, there are several which have no Cartan matrix but, nevertheless, have a quadratic even Casimir element C 2: these are the Lie superalgebra of vector fields on the (1|6)-dimensional supercircle preserving the contact form, and the series: the finite dimensional Lie superalgebra of special Hamiltonian fields in 2k odd indeterminates, and the Kac–Moody version of . Using C 2 we compute N. Shapovalov determinant for and , and for the Poisson superalgebras associated with . A. Shapovalov described irreducible finite dimensional representations of and ; we generalize his result for Verma modules: give criteria for irreducibility of the Verma modules over and   相似文献   

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