掺Fe铝酸锂晶体的光谱性能研究

采用提拉法生长了质量较高的掺Fe铝酸锂(LiAlO2:Fe)晶体,并用吸收光谱、光致激发与发射光谱以及X射线激发发射(XEL)光谱测试等方法对晶体的光谱性质及结构进行了研究。结果表明,晶体对可见光与近红外光具有较高的透过,而在深紫外波段存在与Fe离子相关的吸收。以266nm光激发得到710nm的Fe3+离子的特征发射峰,分析表明晶体中Fe3+离子代替Li+离子而处于8面体格位。比较不同晶体样品的XEL光谱发现,空气退火后的γ-LiAlO2晶体出现了318nm处较强的缺陷发光,而同样条件退火后的LiAlO2:Fe晶体与未退火的γ-LiAlO2晶体均未观察到相应的发光。分析得出此发光应与晶体退火后形成的F+心有关,而Fe掺杂可抑制晶体中Li2O的挥发,提高晶体的热稳定性。     

RTA对氮化硅薄膜发光光谱的影响

在5.0eV的激光激发下，在室温下富硅的LPCVD氮化硅薄膜可发射六个PL峰，其峰位分别为2.97,2.77,2.55,2.32,2.10,1.9eV。经900－1100℃在N2气氛下快速退火（RTA）处理后，样品的六个PL峰变为3.1,2.0,2.85,2.6,2.36,2.2eV。本文对退火前后PL峰的产生和变化机制进行了初步探讨。     

AlGaN/GaN异质结Ni/Au肖特基表面处理及退火研究

采用O₂等离子体及HF溶液对AlGaN/GaN异质结材料进行表面处理后，Ni/Au肖特基接触特性比未处理有了明显改善，反向泄漏电流减小3个数量级.对制备的肖特基接触进行200—600℃ 5min的N₂气氛退火，发现退火冷却后肖特基反向泄漏电流随退火温度增大进一步减小.N₂气中600℃退火后肖特基二极管C-V特性曲线在不同频率下一致性变好，这表明退火中Ni向材料表面扩散减小了表面陷阱密度；C-V特性曲线随退火温度增大向右移动，从二维电子气耗尽电压绝对值减小反映了肖特基势垒的提高. 关键词： AlGaN/GaN 肖特基接触 表面处理 退火     

无损伤超光滑LBO晶体表面抛光方法研究

传统的抛光LBO晶体的方法是选用金刚石抛光粉在沥青抛光盘上抛光。沥青盘易于变形不容易修整,金刚石粉特别硬容易损伤抛光晶体表面。抛光过程中,抛光盘和抛光粉的选择是非常重要的,直接影响到抛光效率和最终的表面质量。新的抛光LBO晶体的方法,其抛光过程是一个化学机械过程,抛光盘、抛光粉和抛光材料相互作用。选用两种抛光盘(培纶和聚氨酯盘),三种较软的抛光磨料(CeO2,Al2O3和SiO2胶体),并在LBO晶体的(001)面进行抛光实验。用原子力显微镜测量和分析了表面粗糙度。结果表明,使用聚氨酯盘和SiO2胶体能够获得无损伤超光滑的LBO晶体表面,其表面粗糙度的RMS为0.3nm。     

γ-LiAlO2晶体生长、改性和热学性质研究

采用快速提拉法生长出了透明、完整的γ-LiAlO2晶体,但是晶体的高熔点和易挥发性限制了γ-LiAlO2晶体质量.采用气相传输平衡法(vapor transport equilibration technique,VTE)工艺对晶体改性,半高宽(FWHM)值从116.9arcsec降至44.2arcsec,继续升高VTE处理温度至1300℃,FWHM值反而升高至55.2arcsec.快速提拉法生长出来晶体,[100]方向和[001]方向的热膨胀系数分别为17.2398×10-6/K,10.7664×10-6/K.经过三步VTE处理后[100]和[001]方向热膨胀系数降至16.6539×10-6/K和10.1784×10-6/K.     

He注入单晶Si表面形貌的变化研究

沿Si的（100）面注入He离子， 能量为30 keV、 剂量为5×1016 ions/cm2。 注入后样品切成几块， 在真空炉中分别做退火处理， 退火温度从600 ℃到1 000 ℃， 退火时间均为30 min。 利用原子力显微镜研究了各个样品表面形貌的演化。 发现样品表面形貌与退火温度相关联。 假设在气泡中He原子与空位的比值很高， 导致样品内部存在高压的He泡， 从而使样品表面形貌发生变化。 探讨了在Si中He泡随退火温度的演化和He原子在材料中的释放机制及其对表面的影响。     

氮气氛中高温退火对ZnO薄膜发光性质的影响

以二乙基锌和水汽分别作为锌源和氧源,用LP-MOCVD方法在p型Si(100)衬底上生长了单一取向的ZnO薄膜。对得到的样品在氮气气氛中进行高温热处理,退火温度分别为900,1000,1100℃。利用室温PL谱、XRD、AFM、XPS等方法对样品的性质进行了研究。研究表明:(1)随着退火温度的升高,样品的结晶性质也逐渐提高,从表面形貌观察到晶粒尺寸逐渐增大;(2)当退火温度从900℃升高至1000℃时,样品的光致发光谱中可见光波段的发光强度有所减弱,而紫外波段的发光强度明显增强;当退火温度升高至1100℃时,可见光波段的发光几乎完全被抑制,而紫外波段的发光强度急剧增强。分析认为,高温退火改善晶体结晶质量的同时调制了样品的Zn/O比,氮气气氛下的热处理使得样品内的氧原子逸出,来自受主缺陷OZn的可见发射随温度升高逐渐减弱,而当退火温度达到1000℃以上时样品成为富锌状态,此时与施主缺陷Zni有关的紫外发射急剧增强。     

L-MBE法生长ZnO薄膜的退火研究

研究了空气退火对于激光分子束外延(L-MBE)法制备的ZnO薄膜光学及结构特性的影响,报道了采用小角度X射线分析(GIXA)技术对于ZnO薄膜退火前后的表面及界面状况的定量分析结果.RHEED衍射图样表明,薄膜经过380℃及600℃原位退火后,其表面仍然较为粗糙.而XRD在面(in-plane)Φ扫描结果显示出经过800℃空气退火之后,薄膜具有更好的外延取向性.GIXA分析结果表明,800℃退火后ZnO薄膜的表面方均根粗糙度从退火前的1.13 nm下降为0.37 nm;同时ZnO/Al2O3界面粗糙度从2.10 nm上升为2.59 nm.ZnO室温PL结果显示,退火后薄膜紫外近带边发光强度比退火前增大了40倍,并出现了源于电子－空穴等离子体(EHP)复合的N带受激发射峰,激发阈值约为200 kW/cm2.     

Co掺杂的ZnO稀磁半导体块体的退火热处理研究

采用固相反应法制备了Zn_0.95Co_0.05O块体样品，并对其进行了不同方式的退火处理.实验表明在锌气氛中500℃退火的样品表现出铁磁性，而在真空中退火的样品却没有磁性，进一步，在锌气氛中1100℃退火的样品虽然表现出铁磁性，但其铁磁性来源于样品在锌气氛中1100℃退火过程中产生了1%左右的Co金属团簇杂质相.另外，在低温时所有样品都表现出较大的正磁电阻，认为正磁电阻效应是由于s-d电子交换相互作用引起的自旋劈裂造成的，而高场时出现的负磁电阻效应则可能归因于磁场 关键词： Co掺杂ZnO X射线衍射 铁磁性 磁电阻     

注入Ar+的蓝宝石晶体退火前后光致发光谱的分析

对注入Ar⁺后不同晶面取向的蓝宝石晶体在不同退火条件下的光致发光谱进行了分析.分析结果表明:三种晶面取向的蓝宝石样品经Ar⁺注入后，其光致发光谱中均出现了新的位于506nm处的发光峰；真空和空气气氛下的退火均对样品在506nm处的发光有增强作用，不同晶面取向的样品发光增强程度不同，且发光增强至最大时的退火温度也不同，空气气氛下的退火使样品发光增强程度更为显著.由此可以看出，退火气氛、退火温度和晶面取向均对样品发光峰强度有影响. 关键词： 2O₃')" href="#">Al₂O₃ 离子注入 退火 光致发光谱     

Ag-Cu离子注入玻璃后不同气氛退火的光吸收研究

采用MEVVA源（metal vapor vacuum arc ion source）引出的强束流脉冲Ag,Cu离子先后注入到SiO₂玻璃，x射线光电子能谱仪（XPS）分析显示Ag，Cu大多仍为金属态，有部分氧化态Cu存在.透射电镜观察分析和光学吸收谱都表明在衬底中形成了纳米合金颗粒.结合有效媒质理论，得到模拟的光学吸收谱，与实验结果基本符合，较好地验证了以上结论.样品退火后颗粒发生分解，分解的颗粒在氧化气氛下被氧化，且有部分向样品表面蒸发；在还原气氛下氧化态元素被还原并成核生长.故 关键词： 离子注入 纳米颗粒 退火 光学吸收率     

Optical and structural properties of Ge-ion-implanted fused silica after annealing in different ambient conditions

Ge+ ions are implanted into fused silica glass at room temperature and a fluence of 1×10 17 cm-2 . The as-implanted samples are annealed in O2, N2 and Ar atmospheres separately. Ge0 , GeO and GeO2 coexist in the as-implanted and annealed samples. Annealing in different atmospheres at 600℃ leads each composite to change its content. After annealing at 1000℃, there remains some amount of Ge 0 in the substrates. However, the content of Ge decreases due to out-diffusion. After annealing in N2 , Si–N composite is formed. The absorption peak of GeO appears at 240 nm after annealing in O2 atmosphere, and a new absorption peak occurs at 418 nm after annealing in N2 atmosphere, which is attributed to the Si–N composite. There is no absorption peak appearing after annealing in Ar atmosphere. Transmission electron microscopic images confirm the formation of Ge nanoparticles in the as-implanted sample and GeO 2 nanoparticles in the annealed sample. In the present study, the GeO content and the GeO2 content depend on annealing temperature and atmosphere. Three photoluminescence emission band peaks at 290, 385 and 415 nm appear after ion implantation and they become strong with the increase of annealing temperature below 700℃, and their photoluminescences recover to the values of as-grown samples after annealing at 700℃. Optical absorption and photoluminescence depend on the annealing temperature and atmosphere.     

退火对电子束热蒸发Al2O3薄膜性能影响的实验研究

 用电子束热蒸发方法镀制了Al₂O₃材料的单层膜，对它们在空气中进行了250~400 ℃的高温退火。对样品的透射率光谱曲线进行了测量，计算了样品的消光系数、折射率和截止波长。通过X射线衍射仪（XRD）测量分析了薄膜的微观结构,采用表面轮廓仪测量了样品的表面均方根粗糙度。结果发现随着退火温度的提高光学损耗下降，薄膜结构在退火温度为400 ℃时仍然为无定形态，样品的表面粗糙度随退火温度的升高而增加。引起光学损耗下降起主导作用的是吸收而不是散射，吸收损耗的下降主要是由于退火使材料吸收空气中的氧而进一步氧化，从而使薄膜材料的非化学计量比趋于正常。     

Influence of post-grown Li-rich and Li-poor vapor transport equilibration on composition, OH− absorption and optical-damage threshold of Mg (5 mol%) : LiNbO3 crystals

Li-rich (Li-poor) vapor transport equilibration (VTE) treatments on a number of Z-cut 0.47 mm thick congruent MgO (5 mol% in melt) : LiNbO₃ crystals were carried out at 1100°C over different durations ranging in 1–172 (40–395) h. Neutron activation analysis shows that neither Li-rich nor Li-poor VTE-induced Mg and Nb loss from the crystal occurred. The Li₂O content in the crystal was measured as a function of VTE duration by the gravimetric method. The Li-rich/Li-poor VTE effects on OH⁻ absorption were studied in comparison with the as-grown crystal. The study shows that the Li-rich VTE results in OH⁻ absorption band annihilation. After further oxidation treatment the band reemerges and peaks at the same wavenumber as that of the as-grown crystal (∼3535.6 cm⁻¹), showing that the MgO concentration in the Li-rich VTE crystal is still above the optical-damage threshold. The Li-poor VTE causes OH⁻ band shift to 3486.3–3491.6 cm⁻¹, indicating that the MgO concentration in all Li-poor VTE crystals is all below the optical-damage threshold. Further successive Li-rich VTE and oxidation treatments on the Li-poor VTE-treated crystal lead the band to shift back to 3535.6 cm⁻¹, showing that the post Li-rich VTE brought the Li-poor VTE-treated crystal above the optical-damage threshold again. It is found that the peaking position, band width, peaking absorption and band area of the absorption at ∼3486 cm⁻¹ all increase monotonously with the decrease of the Li₂O content arising from prolonged Li-poor VTE, and quantitative relationships to the Li₂O content are established for the latter two parameters. The VTE effects on the OH⁻ absorption are conducted with the VTE-induced OH⁻ content alteration and charge redistribution.     

Effects of annealing atmosphere on the luminescent efficiency of ZnTe:O phosphors

The effect of the annealing atmosphere on the luminescent efficiency of ZnTe:O phosphors for X-ray imaging applications was studied. The phosphors were doped by ball-milling bulk ZnTe crystals in an O₂ atmosphere and annealed in various atmospheres: vacuum, N₂ or forming gas (95%N₂/5%H₂). All samples exhibited a deep red emission centered at 680 nm.The samples annealed in forming gas atmosphere exhibited an X-ray luminescent efficiency five times higher than the samples annealed in vacuum or N₂ atmospheres, which was attributed to the removal of surface tellurium oxides.     

Thermal Stability of the Structure and Phase Composition of Titanium Treated with Compression Plasma Flows

The results of studying the structure and phase composition of the surface layer of commercial pure VT1-0 titanium treated with compression plasma flows in nitrogen atmosphere and annealed in the temperature range of 400–900°C for 1 h are presented. Using the X-ray diffraction method, the α-Ti(O) solid solution is found to form in the titanium surface layer at 500°C, without pretreatment with plasma, and to transform into the titanium oxide TiO₂ (rutile) phase at 600°C. Pretreatment of titanium with compression plasma flows promotes the formation of α-Ti(N) solid solution decreasing the rate of surface oxidation and increasing the initial temperature of rutile formation to 700°C, which indicates enhancement of the thermal stability of this structure.     

Ti: LiAlO2新型晶体的结构分析

通过研究提拉法生长的掺杂Ti浓度为0.2at%的LiAlO₂晶体吸收光谱，荧光光谱和红外光谱，来分析此新型晶体的结构.分析发现光谱中仅出现了四价Ti离子的196nm的特征吸收峰, 用235nm光激发得到384nm的特征发射峰；针对吸收光谱中660—820nm出现的四个弱小吸收峰提出了一个色心模型，从而解释了空气和富Li气氛处理后吸收峰消失的现象；对比纯LiAlO₂晶体的红外光谱发现，Ti的掺入仅影响了［AlO₄］键强，而［LiO_{4 关键词： 2}')" href="#">Ti: LiAlO₂ 色心 光谱     

Spectroscopic study on thermal reaction and desorption of sulfur/Rh(1 0 0) induced by oxygen-containing molecules

The surface reaction and desorption of sulfur on Rh(1 0 0) induced by O₂ and H₂O are investigated with X-ray photoelectron spectroscopy (XPS) technique. The Rh(1 0 0) sample covered with atomic sulfur is prepared by means of the exposure to H₂S gas, and subsequently the sample is annealed under O₂ or H₂O atmosphere. The XPS results show that atomic sulfur adsorbed on Rh(1 0 0) reacts with O₂ and desorbs from the surface at 473 K or more. On the other hand, atomic sulfur can not be removed from Rh(1 0 0) surface by H₂O at any temperature.     

Influence of Annealing Temperature on Structure, Optical Loss and Laser-Induced Damage Threshold of TiO2 Thin Films

TiO2 thin films are prepared on fused silica with conventional electron beam evaporation deposition. After annealed at different temperatures for 4h, the spectra and XRD patterns of the TiO2 thin film are obtained. Weak absorption of coatings is measured by the surface thermal lensing technique, and laser-induced damage threshold （LIDT） is determined. It is found that with the increasing annealing temperature, the transmittance of TiO2 films decreases. Especially when coatings are annealed at high temperature over 1173K, the optical loss is very serious. Weak absorption detection indicates that the absorption of coatings decreases firstly and then increases, and the absorption and defects play major roles in the LIDT of TiO2 thin films.     

ZnO薄膜的椭偏和DLTS特性

用射频磁控溅射在硅衬底上淀积氧化锌薄膜,并对样品分别作氮气、空气、氧气等不同条件下退火处理。为研究退火气氛对ZnO/Si薄膜中缺陷以及折射率的影响,由深能级瞬态谱(DLTS)以及椭偏测量方法进行了检测。椭偏测量结果表明相对原始生长的样品,在氮气和空气退火使ZnO薄膜折射率下降,但氧气中退火使折射率升高。我们对折射率的这种变化机理进行了解释。DLTS测量得到一个与Zni**相关的深能级中心E1存在,氧气气氛退火可以消除E1能级。在氮气退火情况下Zn*i*的存在对抑制VO引起的薄膜折射率下降有利。