ZnO压敏陶瓷介电损耗的温度谱研究

利用Novocontrol宽频介电谱仪在-100—20 ℃温度范围内测量了ZnO-Bi₂O₃系压敏陶瓷的介电频谱,其频率范围为10^-2—10⁶ Hz. 研究表明： ZnO压敏陶瓷特征损耗峰的活化能分别为0.26和0.36 eV,结合实验条件、理论计算结果及其他现象的分析排除了特征损耗峰源于阴极电子注入、夹层极化和偶极子转向极化的可能.热刺激电流（TSC）谱共出现三个峰,其中高温峰对应于TSC实验加压过程引入的热离子极化,而中温峰和低温峰对应于介电损耗峰. 在分析的基础上,提出了ZnO压敏陶瓷的特征损耗峰起源于耗尽层内本征缺陷的电子弛豫过程. 关键词： ZnO压敏陶瓷 本征缺陷 介电谱 热刺激电流     

纳米板钛矿基二氧化钛中的晶格畸变

借助精确的Ｘ射线衍射测量,结合独立衍射峰对不同晶粒度纳米板钛矿基二氧化钛样品中板钛矿和金红石相的微结构参量进行了较细致的研究,给出了标明物相、晶面指数（ｈｋｌ）和晶面间距ｄｈｋｌ值详细分析结果的系列ＸＲＤ谱,并得到了晶面间距、晶格常数、轴比、晶胞体积等参数数值及其相对常规粗晶的变化情况,从而初步揭示出其晶粒微结构的尺寸效应。首次发现,纳米板钛矿基二氧化钛样品中板钛矿和金红石相晶粒均存在着非单调的各     

二氧化钛微晶结构相变与光致发光

以钛酸四丁脂为前驱体制备了二氧化钛(TiO₂)胶体,将其粉末在不同温度下作热处理,采用差热分析、X射线衍射、荧光光谱等手段对样品进行测试。结果表明,随着热处理温度升高,TiO₂由板钛矿相经锐钛矿相向金红石相转变,在808℃左右出现一级相变。原始粉末样品以及在600℃以下热处理的样品,在400nm处可观察到TiO₂纳米晶的带边发光,在470nm处可观察到表面态发光;当热处理温度达到850℃时,主晶相转变为金红石相,400nm处的带边发光峰消失,位于470nm处发光峰成为最强峰,但强度减弱,并且样品发光的波长范围明显变窄。其原因是,随着热处理温度升高,晶粒不断长大,量子限域效应减弱乃至消失,晶粒的表面状况发生变化,导致样品的荧光发射行为发生变化。     

采用拉曼光谱技术研究纳米锐钛矿到金红石的相转变

采用化学沉淀法制备出40nm的锐钛矿，并用拉曼光谱对纳米和块体锐钛矿到金红石的相转变过程进行了研究。实验结果表明：对于块体锐钛矿，在950℃保温1h，金红石的特征峰446cm^-1开始出现，随着温度的升高，金红石的特征峰446，610和231cm^-1继续增强，锐钛矿的特征峰639，515和397cm^-1逐渐减弱。在1100℃保温1h，锐钛矿转变为金红石；对于纳米锐钛矿，在900℃保温1h后几乎全部转变为金红石，比块体（微米级）锐钛矿到金红石的相转变温度降低了200℃。     

钇掺杂钨酸铅晶体中的极化子和导纳谱

在室温至160 ℃范围内测量了掺钇钨酸铅(PWO∶Y)晶体的直流电导率,证明此时的载流子为极化子.观察到极化子由能带导电到跳跃导电转变引起的电导率极小.在此温区的交流导纳分析给出的交流电导率比直流电导率大三个数量级,说明此时的交流电导率主要是复介电常数的贡献.当样品的电导率和介电常数均随频率而变化时,从交流测量只能得到样品的总的导纳谱，而不能将其中的电导谱和介电谱分开. 关键词： 钨酸铅 电导谱 介电谱 导纳谱 极化子     

纳米离子导体在流体静压力下的复阻抗谱研究

 用惰性气体蒸发和真空原位加压方法制备了具有清洁界面的平均粒度16 nm的纳米固体CaF₂，并在0.1~2 400 MPa范围不同的静水压下用100 kHz~100 Hz内70种频率，精确测量了纳米CaF₂的复平面阻抗谱。分别给出纳米CaF₂离子电导率和相对介电常数随流体静压力的变化规律。最后的讨论指出：离子迁移通遭受压后的变化（大于、等于或小于最佳值）是影响离子电导率-压力曲线的主要因素；界面层空间电荷极化是造成纳米CaF₂相对介电常数较大的原因，由此界面效应可理解介电常数-压力曲线。     

Na0.25K0.25Bi0.5TiO3无铅压电陶瓷的介电特性研究

用固相反应法制备了Na0.25K0.25Bi0.5TiO3(NKBT50)陶瓷,研究了该陶瓷在室温至400℃温度范围内的介电性能.发现该陶瓷的介电温谱与烧结气氛、极化状态有关.在空气中烧结的未极化样品在70℃附近存在介电和损耗峰,而极化后及在氧气氛中烧结的样品并不存在该介电、损耗峰.分析认为70℃的介电和损耗峰与氧空位形成的缺陷偶极子的极化弛豫有关.热激电流显示,陶瓷的去极化温度为225℃,与此相对应的介电、损耗峰也与氧空位有关.     

低温拉曼光谱研究二氧化钛纳米晶的相变

本文通过对二氧化钛纳米晶在-190℃温度的低温拉曼光谱的研究,得到了在二氧化钛纳米晶聚集体中,可以发生锐钛矿到板钛矿然后到金红石和/或直接到金红石的相变;也可发生板钛矿到锐钛矿然后到金红石和/或直接到金红石的相变。     

简化共沉淀法制备CaCu3Ti4O12陶瓷及其介电性能研究

具有巨介电常数的CaCu₃Ti₄O₁₂陶瓷是一种理想的高储能密度电容器材料.本文以草酸为沉淀剂、以乙酸铵为调节pH值的定量缓冲剂,获得制备CaCu₃Ti₄O₁₂陶瓷的简化共沉淀法.确定了pH=30为制备前驱粉料的最佳反应条件.通过显微分析和介电性能测量,发现在1040℃—1100℃范围内,随着烧结温度的提高,陶瓷的品粒尺寸增大,非线性系数上升,电位梯度和介电损耗下降,1100℃烧结的试样tanδ最低达到0.04.认为CaCu₃Ti₄O₁₂陶瓷介电损耗包含直流电导分量、低频松弛损耗和高频松弛损耗.低频松弛活化能为0.51 eV.,对应于晶界处的Maxwell-Wagner松弛极化;高频松弛过程活化能为0.10 eV,对应晶粒内部的氧空位缺陷.烧结温度的升高导致晶界电阻下降.     

飞秒强激光对二氧化钛金红石晶体相变的影响

该文章报道了利用显微激光拉曼光谱仪研究近红外飞秒强激光脉冲诱导二氧化钛金红石单晶所引起的相变.实验辐照时间为60s,当激光辐照平均功率增加时,锐钛矿相的拉曼振动模式强度增强,金红石相的拉曼振动模式强度减弱.通过金红石相和锐钛矿相粉体等拉曼光谱的实验,肯定了随着辐照激光功率的增大,.可以通过拉曼光谱中锐钛矿A1g B1g(515 cm-1)振动模式标志峰和金红石相Eg(445 cm-1)振动标志峰分别对应面积的比判断其相变量.     

时域方法在铁电相变研究中的应用

提出了时域参数的概念。在(49±1)℃的小温度范围内研究了TGS单晶的铁电相变过程中时域和频域介电谱随温度的变化。分出了晶格极化、畴运动和屏蔽电荷激发三种机构提供的信息。后两种机构在此温度范围内使静态介电常数与音频介电常数之比值由接近于1突增至2.5以上。损耗峰主要是屏蔽电荷的贡献,相应自由弛豫时间在48.615℃附近出现奇异性质。 关键词：     

Dielectric relaxation in nanopillar NiFe–silicon structures in high magnetic fields

We explore the dielectric relaxation properties of NiFe nanowires in a nanoporous silicon template. Dielectric data of the NiFe–silicon structure show a strong relaxation resonance near 30 K. This system shows Arrhenius type of behavior in the temperature dependence of dissipation peaks vs. frequency. We report magnetic field dependence of dipolar relaxation rate and the appearance of structure in the dielectric spectrum related to multiple relaxation rates. A magnetic field affects both the exponential prefactor in the Arrhenius formula and the activation energy. From this field dependence we derive a simple exponential field dependence for the prefactor and linear field approximation for the activation energy which describes the data. We find a significant angular dependence of the dielectric relaxation spectrum for regular silicon and nanostructured silicon vs. magnetic field direction, and describe a simple sum rule that describes this dependence. We find that although similar behavior is observed in both template and nanostructured materials, the NiFe–silicon shows a more complex, magnetic field dependent relaxation spectrum.     

ZnO压敏陶瓷中缺陷的介电谱研究

从理论上证明了介电松弛过程在介电谱上等效于电子松弛过程,认为室温下10⁵Hz处特征损耗峰起源于耗尽层处本征缺陷所形成的电子陷阱.在-130—20℃范围内测量了三种配方ZnO陶瓷的介电频谱,发现ZnO压敏陶瓷室温下10⁵Hz处的特征损耗峰在低温下分裂为两个特征峰,认为它们起源于耗尽层中的本征缺陷(锌填隙或/和氧空位)的电子松弛过程.发现ZnO-Bi₂O₃二元系陶瓷特征峰仅仅由锌填隙引起,而ZnO-Bi_{2关键词： ZnO压敏陶瓷 本征缺陷 介电谱 热处理}     

巨介电常数氧化物CaCu3Ti4O12的介电和阻抗特性

采用固相烧结法合成了单相巨介电常数氧化物CaCu₃Ti₄O₁₂（CCTO）.用阻抗分析仪分析了10—420 K温度范围内的介电频谱和阻抗谱特性,并结合ZVIEW软件进行了模拟.结果表明：温度高于室温时,频谱出现两个明显的弛豫台阶,低频弛豫介电常数随温度升高而显著增大,表现出热离子极化特点;温度低于室温时,频谱表现出类德拜弛豫,且高、低平台介电常数值基本不随温度变化,表现出界面极化特点和较好的温度稳定性.频谱中依次出现的介电弛豫对应于阻抗谱中 关键词： 3Ti₄O₁₂')" href="#">CaCu₃Ti₄O₁₂ 介电频谱 阻抗谱 Cole-Cole半圆弧     

Parameters of LC molecules’ movement measured by dielectric spectroscopy in wide temperature range

Dielectric properties of a nematic liquid crystal (NLC) mixture ZhK-1282 were investigated in the frequency range of 10²–10⁶Hz and a temperature range of ?20 to 80?°С. On the basis of the Debye’s relaxation polarization model dielectric spectra of temperature dependence of the orientational relaxation time τ and the dielectric strength δe were numerically approximated at the parallel orientation of a molecular director relative to alternating electric field. Influence of ester components in the mixture plays crucial role in relaxation processes at low temperature and external field frequency. The activation energy of the relaxation process of a rotation of molecules around their short axis was measured in a temperature interval of ?20 to ?+15?°С in which the dispersion of a longitudinal component of the dielectric constant takes place. The energy of potential barrier for polar molecules rotation in the mesophase was calculated. The value of the transition entropy from the nematic to isotropic phase was obtained from this calculation. The values of the coefficient of molecular friction and rotational diffusion were obtained by different methods. The experimental data obtained are in a satisfactory agreement with the existing theoretical models.     

DC conductivity and dielectric properties of maize starch/methylcellulose blend films

The transient current, electrical conductivity, dielectric constant (ε′), and dielectric loss factor (ε″) of starch and methylcellulose homopolymers and their blends with various compositions were studied under different conditions. The x-ray diffraction pattern was obtained for individual polymers and 50:50 wt/wt% blend sample to identify both the structure and degree of crystallinity. From transient current, the ionic and electronic transfer number as well as charge carrier density and drift mobility were determined. The values of activation energy in the temperature range 30–90 °C indicate that the conduction mechanism is due to combined electronic and ionic processes, while in the temperature range 100–160 °C, electronic contribution is predominant. The complex dielectric data of the present samples in an extended frequency and temperature range appear as different relaxation processes, which are connected with polymer dynamics.     

Pb(Zr,Sn,Ti)O3反铁电陶瓷的低温相变扩散与极化弛豫

用弱场介电温谱、热释电流谱、强场电滞回线和变温X射线衍射谱研究了微量La掺杂Pb(Zr,Sn,Ti)O₃(PZST)反铁电(AFEt)陶瓷在-100—180℃温区内的结构与电学特性.弱场介电温谱显示,AFEt陶瓷在低温段(-100—50℃)呈现介电频率弥散(0.1—100kHz)和扩散型相变的特征,而变温X射线衍射谱却表明材料在这一温区内保持四方相结构;低温下经强场作用后,AFEt被诱导为亚稳三方铁电态,介电频率弥散消失.基于多元复杂化合物的组分起伏理论,讨论了PZST AFEt陶瓷 关键词： Pb(Zr Sn 3反铁电陶瓷')" href="#">Ti)O₃反铁电陶瓷 反铁电弛豫 相变 变温X射线衍射     

CaCu3Ti4O12陶瓷的介电特性与弛豫机理

本文采用Novocontrol宽频介电谱仪在-100 ℃–100 ℃温 度范围内、0.1 Hz–10 MHz频率范围内测量了表面层打磨前 后CaCu₃Ti₄O₁₂陶瓷的介电特性, 分析了CaCu₃Ti₄O₁₂陶瓷的介电弛豫机理. 首先, 基于对宏观“壳-心”结构的定量分析, 排除了巨介电常数起源于表面层效应的可能性; 其次, 基于经典Maxwell-Wagner夹层极化及其活化能物理本质的分析, 排除了巨介电常数起源于经典Maxwell-Wagner极化的可能性; 最后, 依据晶界Schottky势垒与本征点缺陷的本质联系, 提出了巨介电常数起源于Schottky势垒边界陷阱电子弛豫的新机理. 陷阱电子弛豫机理反映了CaCu₃Ti₄O₁₂陶瓷本征点缺陷、 电导、介电常数之间的本质关系. 关键词： 3Ti₄O₁₂')" href="#">CaCu₃Ti₄O₁₂ 介电弛豫 Schottky势垒 点缺陷     

Dielectric relaxation in LuFeO3 ceramics

LuFeO₃ ceramics were prepared, and the dielectric characteristics were investigated together with the structure. A giant dielectric constant step (8000 at 10 kHz, 7200 at 100 kHz, and 4000 at 1 MHz) very similar to that in LuFe₂O₄ was observed. The dielectric constant dropped quickly when the temperature decreased through a critical temperature which increased significantly when the frequency increased. A very high relaxor-like dielectric peak with strong frequency dispersion was also observed in a higher temperature range. Two obvious corresponding dielectric relaxation peaks were observed on the curve of dielectric loss vs temperature, and all these dielectric relaxations followed the Arrhenius law. The Fe²⁺/Fe³⁺ mixed-valence structure and the oxygen vacancy primarily governed these relxor-like dielectric behaviors. However, the present ceramics are not relaxor ferroelectric.