先驱体成型压强对膨胀石墨性能的影响

为了实现石墨插层化合物在光电干扰领域的应用,对不同成型压强可膨胀石墨先驱体的微观形貌、膨胀体积及膨胀后的红外干扰性能进行了研究.制备了一系列压强下的成型样品,采用扫描电镜分析其微观形貌变化并用体视显微镜观察了由成型先驱体制得的膨胀石墨蠕虫的形貌.对各样品的膨胀体积进行了测量,并测试分析了各样品所得膨胀石墨对8~14μm波段红外的干扰性能.结果表明:可膨胀石墨先驱体受压成型后其鳞片和片层发生弯折、扭曲甚至碎裂,被打开的片层间距变小,插层结构被破坏;成型压强由0MPa增至50MPa,其膨胀体积由356mL/g减小到216mL/g,相应膨胀石墨的红外遮蔽率从0.87减小到0.42.因此,可膨胀石墨先驱体受压成型会破坏其形貌,其膨胀体积和红外干扰性能随着成型压强的增大而减小.     

纳米晶体线的晶格动力学格林函数及晶格振动

通过求解差分方程,推导了纳米晶体线的晶格动力学格林函数,分析了其晶格振动,并推导了声子数表象中的原子位移及晶格振动哈密顿公式.研究结果表明,纳米晶体线的晶格振动能带分裂为一系列的子带,格波只能沿纳米晶体线的纵向传播,沿纳米晶体线的横截面只存在驻波.     

晶格常数与掺杂YBCO体系超导电性的关系

依据现有的YBCO掺杂实验,对掺杂YBCO体系超导电性与其晶格常数进行了研究,发现它们之间具有较好的规律性。因此提出用晶格常数作为掺杂YBCO超导电性的一个判断标准,这对探索超导机制及对今后实验工作掺杂元素和掺杂比例的选取有很好的指导意义。     

温度对马氏体和铁素体晶格常数影响规律

采用同步辐射技术研究了温度对马氏体和铁素体晶格常数的影响规律.研究结果表明,马氏体和铁素体的晶格常数均随着温度的升高而逐渐增大,但马氏体的衍射峰有分峰现象,而铁素体的衍射峰没有分峰现象.对马氏体的{110}和{200}衍射峰进行分峰处理,得到马氏体晶格常数a和c随温度升高逐渐增大,但晶格常数a的增大速度要大于c的速度,即马氏体的正方度逐渐降低.当温度升至500℃时,马氏体正方度c/a=1.铁素体的晶格常数随温度的变化规律与马氏体晶格常数a的基本相同,而与马氏体晶格常数c的明显不同,表明了温度对马氏体晶格常数的影响本质.除此以外,通过对同步辐射数据的分析,建立了马氏体和铁素体晶格常数随温度变化的数值方程.     

德拜相法测晶格常数实验数据处理方法分析

数据处理是大学物理实验中的一个重要环节。本文介绍了德拜相法测晶格常数实验中的三种数据处理方法,通过误差分析提出了提高准确度的方向,为解决实验教学中存在问题提供了依据。     

介电体超晶格的研究

介电体超晶格是一种新型的有序微结构材料.它具有通常均质材料所不具有的独特优异性能,展现出重要的应用前景.文章介绍了南京大学研究组关于介电体超晶格研究所取得的进展,如将多个光参量过程集成于一块介电体超晶格之中获得了多波长激光同时输出,研制成超晶格全固态三基色激光器原型,在介电体超晶格中将拉曼散射强度增强到104—105倍,用超晶格研制的器件填补了体波超声器件从几百MHz到几千MHz的空白频段,发现了微波与超晶格振动的强烈耦合以及极化激元(polariton)的激发与传播等.     

超晶格高分子—无机纳米复合物

近年来，具有规整结构的纳米复合材料很受人们关注；利用有机－无机相间具有的强相互作用进行有序组装，可实现纳米复合材料结构与形态的微观调控．文章主要讨论了最近纳米复合物领域中的超晶格高分子－无机纳米复合物     

GeSn合金的晶格常数对Vegard定律的偏离

在Si (001)衬底上, 以高质量的弛豫Ge薄膜作为缓冲层, 先后生长Sn组分x分别为2.5%, 5.2%和7.8%的完全应变的三层Ge_1-xSn_x合金薄膜. 在Si (001)衬底上直接生长了x分别为0.005, 0.016, 0.044, 0.070和0.155的五个弛豫Ge_1-xSn_x样品. 通过卢瑟福背散射谱、高分辨X射线衍射和X射线倒易空间图等方法测量了Ge_1-xSn_x合金的组分 与晶格常数. 实验得到的晶格常数相对Vegard定律具有较大的正偏离, 弯曲系数b=0.211 Å.     

高质量镍基超晶格薄膜的制备及表征

自发现镍基超导薄膜之后, 镍基材料体系已成为当前人们的研究热点. 而在相关报道中, 普遍认为高质量的镍基超导前驱体薄膜的制备对其拓扑还原后超导电性的实现具有重要影响. 前期研究表明高质量的前驱体薄膜只生长在SrTiO3 衬底附近, 这与我们的实验结果一致. 为了可控制备高质量的镍基超导前驱体薄膜, 本文利用脉冲激光沉积(PLD) 技术在SrTiO3 (001) 衬底上生长不同厚度的可层选择性还原的[SrTiO3 ]m/[ Nd0 .8Sr0 .2 NiO3 ]n[(STO)m/(NSNO)n ]超晶格薄膜. 采用反射高能电子衍射仪(RHEED) 及透射电子显微镜(STEM) 和 X 射线衍射(XRD) 技术对超晶格薄膜的结构进行原位检测及结构表征, 然后利用综合物性测量系统(PPMS) 测试薄膜的电磁输运性质. 结果表明, 超晶格薄膜的结构质量良好, 超晶格薄膜和高质量单层前驱体薄膜表现出类似的电阻和磁阻现象. 该研究为后续镍基超导薄膜的可重复制备提供了重要的参考.     

Lattice parameter and thermal expansion of CsCl and CsBr by x-ray powder diffraction. I. Thermal expansion of CsCl from room temperature to 90° K

The thermal expansion coefficients of CsCl at eight different temperatures between room temperature and 90° K are presented. The lattice parameters obtained from the observed Bragg angles with the use of Bragg formula were extrapolated to 90° using the Nelson-Riley extrapolation scheme to minimize the systematic errors. The true lattice parameters thus obtained at each temperature were used to obtain the thermal expansion coefficients and these results are compared with earlier interferometric measurements.     

Lattice parameter and thermal expansion of CsCl and CsBr by x-ray powder diffraction. II. Thermal expansion of CsBr from room temperature to 78.2 °K

The lattice parameters of CsBr at eight different temperatures from room temperature to 78.2 °K were measured and the true lattice parameters were obtained by the least squares method using the Nelson-Riley extrapolation function. Using these parameters the thermal expansion coefficients of CsBr were estimated at each temperature by fitting them into a cubic polynomial involving temperatureT. Theα _T thus obtained were compared with the values of earlier workers who used an interferometric technique and the agreement was found to be good.     

Lattice thermal expansion of silver indium disulphide

Lattice parameters of chalcopyrite type compound silver indium disulphide (AgInS₂) were determined as a function of temperature by the x-ray method in the temperature range 28 to 685°C. Using these data, the coefficients of thermal expansion,a _⊥ anda _‖, were evaluated by a graphical method. The temperature dependence ofa _⊥ anda _‖ is represented by a suitable equation. The anisotropic thermal expansion of AgInS₂ is explained in terms of the thermal expansion of the Ag-S and In-S bonds of the AgInS₂ lattice.     

RbMgF3 ：Ni2+ 体系晶格局域结构的EPR理论研究

在考虑掺杂晶体局域畸变的影响后, 建立了联系RbMgF₃: Ni²⁺体系的局域畸变结构与EPR谱间的关系, 并计算了RbMgF₃: Ni²⁺晶体在C_3v和D_3d对称下的零场分裂参量和g 因数. EPR谱的理论计算值与实验值符合甚好.      

Lattice thermal expansion of cesium plumbo chloride

The temperature variation of the lattice parameter of CsPbCl₃ in the cubic phase has been studied by x-ray method, from a determination of the precision lattice parameter at various temperatures, ranging from 50°C to 400°C. The coefficient of thermal expansion of CsPbCl₃ can be expressed by the quadratic equation,α _T = 21.6 × 10⁻⁶ + 2.44 × 10⁻⁹ T + 5.90 × 10⁻¹¹ T ².     

A Remark on High Temperature Polymer Expansion for Lattice Systems with Infinite Range Pair Interactions

We consider the standard high temperature-small activity polymer expansion for lattice spin systems and show how, in many cases using a tree graph equality, various classical results may be improved in some cases or at least proved in a much simpler way.     

Fast frictionless expansion of an optical lattice

We investigate fast frictionless expansion of an optical lattice with dynamically variable spacing (accordion lattice). We design an expansion trajectory that yields a final state identical to the initial state up to an irrelevant phase factor. We discuss the effect of additional force and nonlinear interaction on the fast frictionless expansion.     

介质环境对铜丝电爆炸制备纳米粉体的影响

为了探究介质环境对电爆炸制备纳米粉体的影响, 搭建了相应的电爆炸实验平台, 以铜丝为例分别在水和不同空气压力下开展了电爆炸制备纳米粉体实验.通过Rogoswki线圈和高压探头分别测试了电爆炸过程中的电流和电压波形图.通过电压、电流及能量沉积特征分析了电爆炸的基本过程以及介质环境在电爆炸过程中的作用.运用透射电子显微镜对爆炸产物进行了粒度分析.研究发现, 介质环境对于电爆炸过程的影响主要表现在汽化化阶段以后, 包括介质对蒸汽膨胀的抑制作用, 介质的电离对于铜丝表面击穿的影响以及其对高温金属蒸汽及等离子体的冷却作用.水中铜丝电爆炸能够制备局部均匀的小尺寸纳米粉体, 粒度多数集中在10–20 nm之间, 但粉体易积聚, 且整体粒度跨越较大.空气中制备的粉体分散良好, 符合对数正态分布, 基本上分布于20–100 nm之间, 平均粒度约为40 nm.     

The characterization of nanostructured CVD Ni powders using transmission electron microscopy

Studies of Ni powders using a state-of-the-art transmission electron microscope with a field-emission electron source show that this instrument can be an invaluable tool for studying the morphology and character of nanostructured Ni powder manufactured by a commercial nickel carbonyl vapor deposition process. This study has revealed the presence of surface coatings, including NiO and turbostratic graphite on some powders, which can degrade the electrical conductivity of the powder. Due to the high curvature of hexagonal carbon (graphene) planes, and subsequent high density of defects, the turbostratic graphitic nanocarbon may exhibit new properties.     

Variations of lattice constants and thermal expansion coefficients of indium at high pressure and high temperature

ABSTRACT

The effects of pressure and temperature on the lattice constants and thermal expansion coefficients of Indium were studied up to 18.6?GPa and 506?K based on in situ X-ray diffraction method with an externally heated diamond anvil cell. The results show that the measured axial ratio (c/a) decreases with increasing temperature and its temperature dependence decreases with increasing pressure. The thermal expansion coefficient of the a-axis decreases with increasing pressure up to 7?GPa and remains almost constant above 7?GPa, whereas that of the c-axis increases monotonously with pressure and changes from negative to positive at around 7?GPa. The observed behavior suggests that temperature reduces the tetragonal distortion on the lattice, and its effect is dominant below 7?GPa; in contrast, pressure enhances lattice distortion, and tends to have a stronger effect above 7?GPa.