Mg2(BH4)2(NH2)2脱氢机理的理论研究

对Mg₂(BH₄)₂(NH₂)₂的脱氢机理展开系统的理论研究发现相对于分子内的脱氢过程,分子间的脱氢过程在热力学和动力学方面都是比较有利的. Mg₂(BH₄)₂(NH₂)₂脱氢过程的第一步是BH₄^-中的B-H^δ-和NH2-中     

SO5 SU2 SU2 U1 U1及SO5 U1 U1的矢量相干态表示

本文讨论了SO₅ SU₂ SU₂ U₁ U₁及SO₅ U₁ U₁的VCS表示.计算了SO₅ U₂ U₂的约化矩阵元,并利用K矩阵技术确定了SO₅权的多重度.     

O2/CO2气氛下循环流化床煤燃烧SO2排放

在热输入功率50 kW的循环流化床O₂/CO₂燃烧试验装置上研究燃煤SO₂排放特性及石灰石脱硫机理。结果发现,未添加石灰石时,O₂/CO₂气氛下SO₂排放量比相同O₂浓度的空气气氛下低;随着O₂浓度的升高,排放量升高。相同钙硫摩尔比下,O₂/CO₂气氛下石灰石的脱硫机理以直接脱硫为主,脱硫效率比空气气氛下高;随着O₂浓度的增加,石灰石脱硫效率提高。     

The 2ν1, 2ν2 and 2ν3 overtones of FClO3

The infrared spectra of the 2ν₁, 2ν₂ and 2ν₃ overtones of perchloryl fluoride, FClO₃, have been recorded at high resolution using monoisotopic pure samples. Four symmetric top species have been investigated: F³⁵Cl¹⁶O₃, F³⁷Cl¹⁶O₃, F³⁵Cl¹⁸O₃ and F³⁷Cl¹⁸O₃. The v_i = 2, i = 1, 2, 3 vibrationally excited states are totally symmetric, so these overtones correspond to parallel bands of medium/weak intensity, centered from 2010 to 2120 cm⁻¹ (2ν₁), from 1390 to 1430 cm⁻¹ (2ν₂) and from 1070 to 1100 cm⁻¹ (2ν₃). Most of the bands are unperturbed and their analysis was straightforward. The band origins, the rotational and centrifugal molecular constants in the v₁ = 2, v₂ = 2 and v₃ = 2 states have been determined, with standard deviations of the fits from 0.00024 to 0.00067 cm⁻¹. The 2ν₁ overtones of F³⁵Cl¹⁶O₃ and F³⁷Cl¹⁶O₃ are perturbed by an A₁/E Coriolis resonance between the v₁ = 2 state and one E component of the v₄ = 1, v₆ = 2 manifold. The 2ν₂ of F³⁷Cl¹⁸O₃ is perturbed by the same kind of interaction involving the v₁ = v₆ = 1 (E) state, at about 1396 cm⁻¹. In these bands the resonance is localized on rotational levels with specific J and K values. As a consequence, a few transitions of the perpendicular bands involving the interacting levels could be identified in the spectra. A simultaneous fit of the transitions assigned to the dyads has been performed and the parameters of the excited states have been determined, including the high order Coriolis interaction coefficient . The anharmonic constants x₁₁, x₂₂, x₃₃ of all the studied isotopologues of FClO₃, x₄₆ of F³⁵Cl¹⁶O₃, x₄₆ + g₄₆ of F³⁷Cl¹⁶O₃ and x₁₆ of F³⁷Cl¹⁸O₃, have been derived.     

ScH2及HfH2的电子结构

用自洽LMTO-ASA方法研究了ScH₂及HfH₂的电子结构,毋需在面心晶格的八面体中心位置上加入一个额外的球作为muffin-tin势的修正,关于ScH₂本结果与Peterman及Harmon的计算结果及光电子谱结果十分一致;除去₂¹的位置处在Fermi能级之下,因而在ScH₂中H也可能占据八面体位置。HfH₂状态密度的大致轮廓定性上与光电子谱结果是符合的。H原子带有1.2—1.3个电子电荷。 关键词：     

Li2SO4—Li2B2O4,Li2SO4—(NH4)2SO4赝二元系相图及离子导电性研究

本文用差热分析和X射线衍射方法对Li₂SO₄-Li₂B₂O₄和Li₂SO₄-[NH₄]₂SO₄两个赝二元系相图进行了研究。Li₂SO₄-Li₂B₂O₄是共晶体系,共晶温度为720℃ 关键词：     

Electrodeposition of TiO2–RuO2–IrO2 coating on titanium substrate

TiO₂, RuO₂, and IrO₂ transition metal oxides have many applications in the field of applied electrochemistry. In this work, the mixed solid solutions of TiO₂–RuO₂–IrO₂ coatings have been electrodeposited from aqueous–unaqueous baths.     

SiO2/HfO2高反射膜的研制

主要讨论了电子束蒸发SiO2/HfO2薄膜的面形控制和损伤性能。研究了电子束蒸发工艺参数对薄膜应力以及面形的影响;分析了制备工艺对薄膜吸收、节瘤缺陷密度的影响,测量了制备薄膜的损伤阈值。研究结果表明:调整SiO2蒸发时的氧分压可以有效地将薄膜的应力控制在-250~-50 MPa。同时采用金属Hf蒸发可以显著地将节瘤缺陷密度从12.6 mm-2降低至2.7 mm-2,同时将损伤阈值从30 J/cm2提高至55 J/cm2。     

Li2K(IO3)3与Li2NH4(IO3)3的晶体结构

本文用X射线粉末法测定了Li₂K(IO₃)₃与Li₂NH₄(IO₃)₃的晶体结构和原子参数。发现Li₃K(IO₃)₃,Li₂NH₄(IO₃)₃与Li₂Rb(IO₃)₃同晶型,属单斜晶系,空间群为P2₁/α,每个单胞含有四个化合式量。室温的点阵常数分别为α=11.198?,b=11.046?,c=8.254?,β=111.53°,及α=11.327?,b=11.078?,c=8.341?,β=111.87°。讨论了二元化合物的形成与离子半径的关系。 关键词：     

V2CO2MXene从CO2/N2混合气体中选择性吸附CO2的第一性原理计算

二氧化碳作为温室气体中最重要的组成部分,其含量的变化将直接影响全球气候变化,在燃烧后气体中选择性捕获CO₂,对减缓因CO₂浓度过高引发的环境问题具有十分重要的意义.本文采用第一性原理计算的方法,研究了V₂CO₂ MXene材料对CO₂的选择性吸附性能.首先研究了不同官能团V₂CT_X MXene材料的结构和性质,发现V₂CO₂具有良好的稳定性.后研究了V₂CO₂对CO₂的吸附行为,结果表明,当CO₂被水平吸附时,V₂CO₂对CO₂气体分子的吸附能力较强且均满足在高性能吸附剂表面吸附CO₂的理想值(-0.42 eV-0.82 eV),可以适用于探测/捕获CO₂气体分子.此外,进一步研究了相同条件下V<...     

二维MoS2/MoSe2异质材料的电子结构和热电性质研究

利用密度泛函理论结合玻尔兹曼输运理论计算体相和双层二维MoS₂/MoSe₂异质材料的热电性质. 计算表明,体相MoS₂/MoSe₂异质材料的热电性质比之于MoSe₂会有较大程度的提高. 该异质材料热电性质的提高主要源于异质材料本身带隙的减小以及层间的范德瓦尔斯相互作用. 二维MoS₂/MoSe₂异质材料存在热电应用的可能性.     

Tunable electronic structure in stained two dimensional van der Waals g-C2N/XSe2 (X = Mo,W) heterostructures

The electronic structure of the strained g-C₂N/XSe₂ (X=Mo, W) van der Waals heterostructures are investigated by first-principles calculations. The g-C₂N/MoSe₂ heterostructure is an indirect band gap semiconductor at a strain from 0% to 8%, where its band gap is 0.66, 0.61, 0.73, 0.60 and 0.33 eV. At K point, the spin splitting is 186, 181, 39, 13 and 9 meV, respectively. For g-C₂N/WSe₂ heterostructures, the band gap is 0.32, 0.37, 0.42, 0.45 and 0.36 eV, and the conduction band minimum is shifted from Г-M region to K-Г region as the strain increases from 0% to 8%. Its spin splitting monotonically decreases as a strain raises to 8%, which is 445, 424, 261, 111 and 96 meV, respectively. Moreover, at a strain less than 4%, the conduction band mainly comes from g-C₂N, but it comes from XSe₂ (X=Mo, W) above 6%. Our results show that the g-C₂N/XSe₂ heterostructures have tunable electronic structures, which makes it a potential candidate for novel electronic devices.     

Laser synthesis of thin layers of In4Se3, In4Te3 and modification of their structure and characteristics

Trends of structural modifications and phase composition occurring in In₄Se₃ thin films and In₄Se₃-In₄Te₃ epitaxial heterojunctions under laser irradiations have been investigated. Dynamics of the layer structure modification, depending on laser modes, i.e. pulse duration τ = 2-4 ms, irradiation intensity I₀ = 10-50 kW/cm², number of pulses N = 5-50, was studied by electron microscopy. An increase in laser influence promotes enlargement of the layer grains and transformation of their polycrystalline structure towards higher degree of stoichiometry. As a result of laser solid restructuring heterojunctions of In₄Se₃-In₄Te₃, being photosensitive within 1.0-2.0 μm and showing fast time of response, have been obtained. Laser modification of structure enables one to optimize electrical and optical properties of functional elements on the base of thin films and layers of In₄Se₃, In₄Te₃, widely used as infrared detectors and filters.     

Magnetic properties and surface morphology of layered In2Se3 crystals intercalated with cobalt

The magnetic properties of layered Co _x In₂Se₃ crystals electrochemically intercalated with cobalt in an external magnetic field and without a magnetic field and the morphology of the van der Waals surfaces of layers of these crystals have been investigated. It has been found that the ferromagnetic ordering at room temperature is observed only for Co _x In₂Se₃ crystals intercalated in an external magnetic field. These crystals are nanocomposite materials that consist of a layered matrix and arrays of nanorings and nanowires formed from Co nanocrystals on the van der Waals surfaces of the In₂Se₃ layers. Cobalt nanocrystals in Co _x In₂Se₃ crystals have a pyramidal equilibrium shape, which is characteristic of the face-centered cubic crystal structure, and their geometrical sizes are of the order of a few nanometers. The specific features of self-organization of cobalt magnetic nanostructures on the van der Waals surfaces of layered semiconductor crystals during their electrolytic intercalation in a magnetic field and the magnetic properties of these structures have been considered.     

Substrate effects on V2O3 thin films

We apply density functional theory and the augmented spherical wave method to analyze the electronic structure of V₂O₃ in the vicinity of an interface to Al₂O₃. The interface is modeled by a heterostructure setup of alternating vanadate and aluminate slabs. We focus on the possible modifications of the V₂O₃ electronic states in this geometry, induced by the presence of the aluminate layers. In particular, we find that the tendency of the V 3d states to localize is enhanced and may even cause a metal-insulator transition.     

电场对PtO2/MoS2范德瓦尔斯异质结电子结构调控

本文利用基于密度泛函理论的第一性原理计算方法研究了外电场对PtO2/MoS2范德瓦尔斯异质结电子结构的调控,发现当层间距d=2.83Å时异质结结构最稳定,且表现为Ⅱ型间接带隙半导体,其带隙为0.68 eV。通过施加垂直平面方向电场可有效调控PtO2/MoS2异质结电子结构,当外电场为-1 V/Å时,发生半导体-金属相变。这些研究结果表明PtO2/MoS2异质结在新型二维材料光电纳米器件方面具有广泛应用前景。     

Strong interlayer coupling in phosphorene/graphene van der Waals heterostructure: A first-principles investigation

Based on first-principles calculations within the framework of density functional theory, we study the electronic properties of phosphorene/graphene heterostructures. Band gaps with different sizes are observed in the heterostructure, and charges transfer from graphene to phosphorene, causing the Fermi level of the heterostructure to shift downward with respect to the Dirac point of graphene. Significantly, strong coupling between two layers is discovered in the band spectrum even though it has a van der Waals heterostructure. A tight-binding Hamiltonian model is used to reveal that the resonance of the Bloch states between the phosphorene and graphene layers in certain K points combines with the symmetry matching between band states, which explains the reason for the strong coupling in such heterostructures. This work may enhance the understanding of interlayer interaction and composition mechanisms in van der Waals heterostructures consisting of two-dimensional layered nanomaterials, and may indicate potential reference information for nanoelectronic and optoelectronic applications.     

First principles study of the electronic properties and Schottky barrier in Cu2Si/C2N van der Waals heterostructures

Based on the first principles calculations, we have systematically investigated the electronic structures of Cu₂Si/C₂N van der Waals (vdW) heterostructures. We discovered that the electronic structures of Cu₂Si and C₂N monolayers are preserved in Cu₂Si/C₂N vdW heterostructures. There is a transition from the n-type Schottky contact to Ohmic contact when the interfacial distance decreases from 4.4 to 2.7 Å, which indicates that the Schottky barrier can be tuned effectively by the interfacial distance. Meanwhile, we find that the carrier concentration between the Cu₂Si and C₂N interfaces in the vdW heterostructures can be tuned. These findings suggest that the Cu₂Si/C₂N vdW heterostructure is a promising candidate for application in future nanoelectronics and optoelectronics devices.     

Electronic and optical properties of van der Waals vertical heterostructures based on two-dimensional transition metal dichalcogenides: First-principles calculations

Four vertical heterostructures based on two-dimensional transition-metal dichalcogenides (TMDs) – MoS₂/GeC, MoSe₂/GeC, WS₂/GeC, and WSe₂/GeC, were studied by density functional theory calculations to investigate their structure, electronic characteristics, principle of photogenerated electron–hole separation, and optical-absorption capability. The optimized heterostructures were formed by van der Waals (vdW) forces and without covalent bonding. Their most stable geometric configurations and band structures display type-II band alignment, which allows them to spontaneously separate photogenerated electrons and holes. The charge difference and built-in electric field across the interface of these vdW heterostructures also contribute to preventing the photogenerated electron–hole recombination. Finally, the high optical absorption of the four TMD-based vdW heterostructures in the visible and near-infrared regions indicates their suitability for photocatalytic, photovoltaic, and optical devices.     

Response improvement for In2O3-TiO2 thick film gas sensors

In₂O₃ is introduced into TiO₂ by sol-gel method to improve the response/recovery rate and expand the operating temperature, when the In₂O₃-TiO₂ mixed system is exposed to H₂/O₂. The sensor is fabricated by thick film technology. Influence of In₂O₃ on the film phase composition, microstructure and sensing characteristics is discussed. Dynamic response properties show that the operating temperature of the mixed system is at 500-800 °C, which is about 600-800 °C for pure TiO₂. Response time of the sensor is about 200-260 ms (millisecond) while recovery time is in a narrow range of 60-280 ms at 600-800 °C. The promoting mechanism is suggested to arise from the introduction of In₂O₃ and grain size effect of the sensing film. Then In₂O₃-TiO₂ thick films are surface-modified by Pt using chloroplatinic acid. The promoting effect of Pt dispersed on the mixed system is also investigated.