激光应用 激光化学

O644．8 2005053422 准分子激光电化学刻蚀镍的特性研究=Experimental study on characteristic of Ni in excimet-laser induced elec- trochemical etching[刊,中]／周月豪(华中科技大学机械与 工程学院．湖北,武汉(430074)),柳海鹏…∥光学技术．- 2005,31(3)．-323-325,329 提出一种新的准分子激光电化学加工工艺,在阳极钝 化区内,通过准分子激光照射,以实现无屏蔽的各向异性 的微加工。对该工艺进行了可行性分析,并对其进行了初 步试验,证实在钝化区,准分子激光导致刻蚀电流增加的 幅度比较明显。在此基础上,深入研究了在准分子脉冲激 光作用过程中,刻蚀电流与脉冲数、脉冲频率之间的关系。 表明准分子激光在钝化区具有增强电化学特性的能力。 图4参8(严寒)     

准分子激光电化学刻蚀金属的研究

为了探寻准分子激光电化学刻蚀工艺的特性,采用功率密度大的248nm准分子激光聚焦照射浸在溶液中的金属表面,实现了一种激光电化学刻蚀复合工艺。在实验的基础上,通过对激光电化学刻蚀金属和硅的基本形貌进行比较和分析,研究了该工艺的工艺特性。研究结果表明,该复合工艺为激光直接刻蚀和激光热诱导电化学刻蚀。其中激光热诱导电化学刻蚀是通过激光的光热效应和由激光诱导的冲击波来实现对腐蚀液和材料的冲击、微搅拌等作用的。     

脉冲激光与电化学复合的应力刻蚀加工质量研究

脉冲激光电化学复合加工可以有效去除激光辐照区域内的电解产物, 提高加工效率, 改善加工质量. 针对高性能金属材料的微细加工要求, 采用脉冲激光电化学复合的应力刻蚀加工方法对铝合金的刻蚀特性进行理论和试验研究. 通过比较激光直接刻蚀加工和激光电化学复合加工的特点, 应用扫描电子显微镜、光学轮廓仪等检测技术分析了刻蚀区域的形貌特征. 根据力学电化学原理, 探讨了金属材料微结构加工的应力去除机理. 通过加工试验, 研究了工艺参数和加工方式对加工质量的影响, 采用优化的工艺参数, 加工出了质量较好的微结构. 试验结果表明, 激光电化学复合的连续扫描加工稳定性好, 可以有效地降低表面粗糙度, 提高加工质量. 关键词： 激光电化学 应力刻蚀 加工质量 工艺参数     

308nm准分子激光对C60薄膜的刻蚀特性研究

测量在空气和真空中３０８ｎｍ准分子激光对Ｃ６０薄膜的刻蚀速率和刻蚀阈值，讨论了环境中氧气对刻蚀特性的影响。     

脉冲功率技术在短波长气体激光器中的应用

 介绍了脉冲功率技术在离子准分子、准分子和软X射线激光研究中的应用情况。给出了三种激光产生对泵浦源电学参数的要求，并给出实现这些电学参数的实验装置以及实验装置的性能指标。在软X射线激光研究方面，利用10级Marx发生器和Blumlein传输线，建立了最高电流峰值40 kA，前沿为26.6 ns的毛细管放电装置，并实现了46.9 nm激光输出。建立了输出电压600 kV、输出电流20 kA的电子束装置，并作为泵浦源实现了离子准分子光腔效应。为了泵浦S2准分子，采用横向放电方式和低电感放电回路，实现了电压脉冲宽度为29.2 ns的窄脉冲放电。     

电子束泵浦XeCl准分子激光器及应用

为了获得高能紫外激光输出,开展了电子束泵浦XeCl准分子激光技术研究。详细介绍了四向电子束泵浦准分子激光装置的工作原理和结构特征,简述Marx发生器的放电电压、放电电流,激光气室中的沉积能量,激光脉冲能量、脉宽等参数的测量方法;研究了电子束泵浦XeCl准分子激光输出特性,得到了激光脉冲能量随激光气室内混合气体气压变化的规律,当激光器的充电电压为81kV时,获得了能量100J、脉宽200ns的XeCl准分子激光输出,其本征效率约为3.2%。并且开展了XeCl准分子激光辐照涂层材料力学特性研究,采用微型红外通光冲量探头测量不同条件下激光辐照涂层材料的冲量耦合系数,在常压空气环境中的冲量耦合系数约为8.32×10-5 N·W-1。     

锥形半导体激光芯片的光刻工艺研究

针对锥形半导体激光器中的脊形波导区宽度较小的问题,对半导体激光芯片制造中的刻蚀标记及刻蚀方法进行了研究。提出对于锥形半导体刻蚀中的脊型区域和锥形区域,采用不同精度的双标记刻蚀方法,细化对脊形波导和锥形波导的刻蚀中的对准问题,并使光刻标在不同的光刻版上相错位排列,在相应光刻版中相互遮挡,反复刻蚀中保证相应的光刻标清晰、完整。刻蚀后的芯片在电流为7 A时获得了中心波长963nm、连续功率4.026 W、慢轴方向和快轴方向激光光束参数乘积分别为1.593 mm·mrad和0.668 mm·mrad的激光输出。     

准分子激光辐照HgCdTe半导体材料的损伤机理研究

利用光学显微镜和扫描电子显微镜对248 nm准分子脉冲强激光辐照的HgCdTe晶片表面进行了观察,观察到一些与红外波段内激光辐照HgCdTe晶片时大不相同的实验现象.研究表明,红外波段内1 064nm激光辐照HgCdTe半导体材料的损伤机制主要为光热作用,而紫外波段248 nm准分子激光对HgCdTe材料的损伤机制既包含光化学作用也包含光热作用.分析了准分子激光对晶体的机械破坏现象,同时对HgCdTe材料在激光辐照区的条纹产生机理进行了探讨,发现激光驱动声波理论模型比光学模型和热导波模型能更好地解释HgCdTe晶体表面的条纹现象.     

C60薄膜的准分子激光刻蚀及形貌分析

报道了准分子ＸｅＣｌ（３０８ｎｍ）紫外激光刻蚀Ｃ６０膜的实验研究及对刻蚀薄膜的形貌分析。基于形貌分析的结果提出其刻蚀机理。     

短脉冲红外激光诱导等离子体微刻蚀单晶高温高压金刚石

采用短脉冲激光诱导等离子体辅助加工技术加工金刚石微结构,研究短脉冲红外激光的光强、脉宽、重复频率、靶材与金刚石基片之间的距离等加工参数对金刚石的加工线宽、槽深以及加工效果的影响。当用脉冲宽度大于4 ns的激光作用在方向良好的单晶金刚石上时,光热作用明显,诱导产生金属等离子团的能量密度达到一定阈值且复合短脉冲激光能量作用下,单晶金刚石表层温度迅速上升至600°C以上,此时金刚石表层产生了刻蚀微结构;当用脉冲宽度小于4 ns的激光轰击靶材表面时,短脉冲激光轰击靶材诱导金属等离子团,可实现背面溅射相关金属靶材,当等离子体密度达到微刻蚀阈值时也可实现金刚石背部刻蚀以及石墨化。短脉冲红外激光的脉宽、重复频率决定了沉积/刻蚀加工效果。本文研究表明短脉冲激光诱导等离子体辅助加工技术是一种新型可靠的金刚石微结构加工工艺。     

The study of the solution concentration influencing on laser-induced electrochemical etching silicon

The laser electrochemical etching process, which combines the laser direct etching process and the electrochemical etching process, is a compound etching technique. In order to further understand the solution concentration influencing on the laser-induced electrochemical etching of silicon; a 248 nm excimer laser as a light source and KOH solution as an electrolyte were adopted in this study. The experiments of micromachining silicon by laser-induced electrochemical etching were carried out. On the basis of the experiments results, the solution concentration influencing on the etching rates in the process of laser electrochemical etching of silicon was researched. The reasons of the etching phenomena were analyzed in detail. The experimental results indicate that the solution concentration influencing on the etching process is mainly rooted in the absorption of different concentration solutions to laser. In general, less absorption and low solution concentration are good for the etching role in the process of laser electrochemical etching.     

Using IR laser radiation for backside etching of fused silica

Laser-induced backside etching of fused silica with gallium as highly absorbing liquid is demonstrated using pulsed infrared laser radiation. The influences of the laser fluence, the pulse number, and the pulse length on the etch rate and the etched surface topography were studied and the results are compared with these of excimer laser etching. The high reflectivity of the fused silica-gallium interface at IR wavelengths results in the measured high threshold fluences for etching of about 3 J/cm² and 7 J/cm² for 18 ns and 73 ns pulses, respectively. For both pulse lengths the etch rate rises almost linearly with laser fluence and reaches a value of 350 and 300 nm/pulse at a laser fluence of about 12 and 28 J/cm², respectively. The etching process is almost free from incubation processes because etching with the first laser pulse and a constant etch rate were observed. The etched surfaces are well-defined with clear edges and a Gaussian-curved, smooth bottom. A roughness of about 1.5 nm rms was measured by AFM at an etch depth of 0.95 μm. The normalization of the etch rates with respect to the reflectivity and the pulse length results in similar etch rates and threshold fluence for the different pulse widths and wavelengths. It is concluded that etching is a thermal process including the laser heating, the materials melting, and the materials etching by mechanical forces. The backside etching of fused silica with IR-Nd:YAG laser can be a promising approach for the industrial usage of the backside etching of a wide range of materials. PACS 81.65.C; 81.05.J; 79.20.D; 61.80.B; 42.55.L     

A laser dry etch process for smooth continuous relief structures in InP

A laser induced etch process is described which uses a pulsed 248 nm KrF excimer laser and Cl₂ atmosphere for the fabrication of monolithic continuously curved reliefs in InP substrate. In a bakeable processing chamber with low base pressure a wide range of laser fluences is available for damage-free etching. Especially, by photothermal heating far above the melting point, mirrorlike smooth surfaces are obtained. The etch rate characteristics are correlated to the maximum surface temperature reached during the laser pulse. The etch rate is independent of pressure and gas flux in the ranges 0.1–10 mbar and 20–300 sccm, respectively. It increases, however, with the background substrate temperature. Etch rates of up to 3.6 nm/pulse or 4.3 lm/min are possible at 20 Hz pulse repetition rate without visible surface damage. The process exhibits a smooth increase of the etch rate from 1 to 3 nm/pulse between 200 and 300 mJ/cm², which could be used for making curved reliefs by optical transmission variations on the projection mask.     

Micro-patterning for polymer electrolyte fuel cells: Single pulse laser ablation of aluminum films from glassy carbon

Microfuel cells are a possible replacement for batteries as energy sources in portable devices. At PSI a micropolymer electrolyte fuel cell was developed, whose flow fields consist of micro-structured glassy carbon plates. Micro-structuring of glassy carbon is carried out in a multi-step process. A sputtered aluminum mask is selectively removed by single pulse laser ablation from glassy carbon thereby defining micro-channels subsequently etched by reactive ion etching.A pulsed XeCl excimer laser (308 nm) is used for the single pulse patterning of a metal mask on the glassy carbon. The influence of the excimer laser typical pulse to pulse energy fluctuations on the micro-structuring process must be known to minimize defects during RIE etching of the micro-channels. To obtain a better understanding of the processes occurring during ablation, ns-shadowgraphy was performed. The formation of a shockwave was observed, followed by a similar but much slower perturbation, and the subsequent release of fragments. The calculated velocities can be correlated with the energy release during ablation. The post-ablation examination of the samples by profilometry, optical microscopy, SEM and EDX is used to measure the amount of removed material, the quality of the aluminum mask edges and aluminum residues on the glassy carbon surface. Such criteria allow us to classify the laser irradiation as a function of laser fluence: no ablation, partial ablation, complete ablation, and over-ablation.     

Time-resolved measurements during backside dry etching of fused silica

The laser-induced backside dry etching (LIBDE) investigated in this study makes use of a thin metal film deposited at the backside of a transparent sample to achieve etching of the sample surface. For the time-resolved measurements at LIBDE fused silica samples coated with 125 nm tin were used and the reflected and the transmitted laser intensities were recorded with a temporal resolution of about 1 ns during the etching with a ∼30 ns KrF excimer laser pulse. The laser beam absorption as well as characteristic changes of the reflection of the target surface was calculated in dependence on the laser fluence in the range of 250-2500 mJ/cm² and the pulse number from the temporal variations of the reflection and the transmission. The decrease of the time of a characteristic drop in the reflectivity, which can be explained by the ablation of the metal film, correlates with the developed thermal model. However, the very high absorption after the film ablation probably results in very high temperatures near the surface and presumably in the formation of an absorbing plasma. This plasma may contribute to the etching and the surface modification of the substrate. After the first pulse a remaining absorption of the sample was measured that can be discussed by the redeposition of portions of the ablated metal film or can come from the surface modification in the fused silica sample. These near-surface modifications permit laser etching with the second laser pulse, too.     

脉冲紫外激光刻蚀聚合物薄膜的发射光谱和形貌学研究

用聚焦的紫外XeCl准分子激光器轰击高分子聚合物薄膜(涤纶薄膜),由OMA系统接收其发射光谱.发现谱线主要为C2的Swan带和CN的红带,并与高压汞灯照射后的聚合物薄膜的发射谱进行了比较,在我们的实验精度内,没有发现区别.实验显示,每个光脉冲能刻蚀掉几分之一到几个微米的薄膜.激光的刻蚀效应存在波长和能量密度两个阈值.对于涤纶薄膜,能量密度的阈值约为40mJ/cm2.同时还作了紫外吸收光谱和SEM照片的分析.     

XeCl准分子激光能量提取研究

在高功率准分子激光系统建设中,希望能获得较短的脉冲宽度和尽量多的激光能量。实验研究了不同注入水平下,脉冲时间间隔对脉冲链放大波形和放大器提取效率的影响;基于四能级速率方程和准分子反应动力学建立了准分子激光放大模型,计算了多种注入方式下种子光的放大过程,对关键参数给出了量化描述,得到与实验相符的计算结果。研究结果显示:脉冲序列间隔为9.3ns时,可获得约95%的连续注入情形下放大能量;对该准分子激光系统来讲,9.3ns是比较合适的脉冲间隔。