Spacer layer thickness fluctuation scattering in a modulation-doped Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs quantum well

We theoretically study the influence of spacer layer thickness fluctuation(SLTF) on the mobility of a twodimensional electron gas(2DEG) in the modulation-doped Al x Ga 1 x As/GaAs/Al x Ga 1 x As quantum well.The dependence of the mobility limited by SLTF scattering on spacer layer thickness and donor density are obtained.The results show that SLTF scattering is an important scattering mechanism for the quantum well structure with a thick well layer.     

Simulation of 12C+12C elastic scattering at high energy by using the Monte Carlo method

The Monte Carlo method is used to simulate the ¹²C+¹²C reaction process. Taking into account the size of the incident ¹²C beam spot and the thickness of the ¹²C target, the distributions of scattered ¹²C on the MWPC and the CsI detectors at a detective distance have been simulated. In order to separate elastic scattering from the inelastic scattering with 4.4 MeV excited energy, we set several variables: the kinetic energy of incident ¹²C, the thickness of the ¹²C target, the ratio of the excited state, the wire spacing of the MWPC, the energy resolution of the CsI detector and the time resolution of the plastic scintillator. From the simulation results, the preliminary establishment of the experiment system can be determined to be that the beam size of the incident ¹²C is φ 5 mm, the incident kinetic energy is 200-400 A MeV, the target thickness is 2 mm, the ratio of the excited state is 20%, the ight distance of scattered ¹²C is 3 m, the energy resolution of the CsI detectors is 1%, the time resolution of the plastic scintillator is 0.5%, and the size of the CsI detectors is 7 cm×7 cm, and we need at least 16 CsI detectors to cover a 0° to 5° angular distribution.     

Quantitative evaluation of equatorial small-angle X-ray scattering for cylindrical fibers

Elongated microvoids, internal fibrillar structure, and edge scattering from both surface refraction cause an equatorial streak in small angle X-ray scattering. A model for analyzing the edge scattering of fibers is proposed. Simulation results indicate that the intensity of edge scattering from surface refraction of a cylindrical fiber is strong and makes an important contribution to the equatorial streak. Two factors influence edge scattering intensity. One is the sample-to-detector distance (D); edge scattering intensity increases with increasing D. The equatorial streak becomes weak when D is shortened. The other factor is the refraction index. Edge scattering intensity increases as the real component of the refraction index decreases. In experiment, weak or even no equatorial streaks were found for samples measured in a roughly index-matching fluid. Edge scattering can be eliminated or weakened, and it can be calculated by comparing the intensities of a cylindrical fiber when it is measured in air and in index-matching fluid. The simulation data are basically in agreement with the experimental data.     

Confirmation on origin of primary electron in solid state cathodoluminescence

This paper utilizes the brightness-voltage waveform curve to investigate the primary electron in solid state cathodoluminescence. The results indicate that the primary electron is from the interface state of SiO₂/MEH-PPV (Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]) under the lower electric field which contributes to the 580-nm emission. With increasing the electric field, the 405-nm emission is obtained, and under this condition, the origin of the primary electron is mainly from tunneling.     

Selection rules for electric multipole transition of diatomic molecule in scattering experiments

The knowledge of the energy level structures of atoms and molecules is mainly obtained by spectroscopic experiments.Both photoabsorption and photoemission spectra are subject to the electric dipole selection rules(also known as optical selection rules). However, the selection rules for atoms and molecules in the scattering experiments are not identical to those in the optical experiments. In this paper, based on the theory of the molecular point group, the selection rules are derived and summarized for the electric monopole, electric dipole, electric quadrupole, and electric octupole transitions of diatomic molecules under the first Born approximation in scattering experiments. Then based on the derived selection rules, the electron scattering spectra and x-ray scattering spectra of H2, N2, and CO at different momentum transfers are explained, and the discrepancies between the previous experimental results measured by different groups are elucidated.     

Luminosity determination for the pd reaction at 2.14 GeV with WASA-at-COSY

The luminosity for a WASA-at-COSY experiment involving the pd reaction at 2.14 GeV proton-beam energy is determined by the forward pd elastic scattering, which yields an average beam-on-target value of [5.2 ± 0.3(stat) ± 0.3syst] × 10³⁰s^-1cm^-2. In addition, the forward pd elastic-scattering angular distribution is obtained with four-momentum transfer squared -t between 0.16 (GeV/c)² and 0.78 (GeV/c)² at this beam energy, which is compared with other experimental data and the pd double scattering model.     

流的偏心率——在相对论性重离子碰撞过程中初态物质的椭圆流涨落和横向局域化证据

Recent measurements of event-by-event elliptic flow in Au+Au collisions at s_NN=200GeV exhibit large relative fluctuations of about 40%—50%. The data are well described by fluctuations in the shape of the initial collision region, as estimated event-by-event with the participant eccentricity using Glauber Monte Carlo. These results, combined with the demonstrated participant eccentricity scaling of the elliptic flow across nuclear species, constitute evidence of transverse granularity in the initial matter production in these collisions.     

Physical model of acoustic forward scattering by cylindrical shell and its experimental validation

Research on the underwater target scattering can provide important theoretical support for target detection. The scattering model of cylindrical shell is established in this paper. It is found that the forward target strength is much stronger and varies with angles of incident wave less significantly than backward target strength. The received forward signal strength fluctuates with the target moving due to the interference between direct signal and scattering signal, which is most significant when target approaches the baseline. An experiment is carried out in an anechoic tank to validate the scattering model. The method of acquisiting forward scattering in the tank is proposed. The forward and the backward target strengths are achieved by using the pulse compression technology, and they are about 3dB less than the modeling results. The forward scattering phenomena of quiescent and moving target are measured, which are similar to modeling results with different target types.     

Analytical estimation of ATF beam halo distribution

In order to study the backgrounds in the ATF2 beam line and the interaction point (IP), this paper has developed an analytical method to give an estimation of the ATF beam halo distribution based on K. Hirata and K. Yokoya''s theory. The equilibrium particle distribution of the beam tail in the ATF damping ring is presented, with each electron affected by several stochastic processes such as beam-gas scattering, beam-gas bremsstrahlung and intra-beam scattering, in addition to the synchrotron radiation damping effects. This is a general method which can also be applied to other electron rings.     

Study of ~3He inelastic scattering on ~(13)C and ~(14)C at 37.9 MeV

The differential cross sections of elastic and inelastic scattering of ³He ions on ¹³C and ¹⁴C have been studied at an energy of 37.9 MeV with a double folding model based on M3Y-Reid effective nucleon-nucleon interaction. The resulted parameters have been used for the standard Distorted Wave Born Approximation calculations of angular distributions corresponding to different excitations levels of ¹³C and ¹⁴C and deformation parameters have been deduced.     

GaN/AlxGa1-xN异质结二维电子气的磁电阻研究

通过对GaN/Al_xGa_1-xN异质结中二维电子气磁输运结果的分析,研究了磁电阻的起因.结果表明,整个磁场范围的负磁电阻是由电子-电子相互作用引起的,而高场下的正磁电阻来源于平行电导的进一步修正.用拟合的方法得到了电子-电子相互作用项以及平行电导层的载流子浓度和迁移率,并用不同的计算方法对拟合结果进行了验证.     

AlN插入层对AlxGa1-xN/GaN界面电子散射的影响

本文研究AlN作为Al_xGa_1-xN/GaN插入层引起的电子输运性质的变化, 考虑了Al_xGa_1-xN和AlN势垒层的自发极化、压电极化对Al_xGa_1-xN/AlN/GaN双异质结高电子迁移率晶体管(HEMT)中极化电荷面密度、二维电子气(2DEG) 浓度的影响, 分析了AlN厚度与界面粗糙度散射和合金无序散射的关系; 结果表明, 2DEG 浓度、界面粗糙度散射和合金无序散射依赖于AlN层厚度, 插入一层1–3 nm薄的AlN层, 可以明显提高电子迁移率.     

AlxGa1-xN/GaN异质结构中Al组分对二维电子气性质的影响

通过用数值计算方法自洽求解薛定谔方程和泊松方程，研究了Al组分对Al_xGa1-xN/GaN异质结构二维电子气性质的影响，给出了Al_xGa_{1-x< /sub>N/GaN异质结构二维电子气分布和面密度，导带能带偏移以及子带中电子分布随AlxGa 1-xN势垒层中Al组分的变化关系，并用AlxGa1-xN/GaN 异质结构自发极化与压电极化机理和能 关键词： x}Ga_1-xN/GaN异质结构')" href="#">Al_xGa_1-xN/GaN异质结构 二维电子气 自发极化 压电极化     

AlxGa1-x N/GaN调制掺杂异质结构的子带性质研究

通过低温和强磁场下的磁输运测量研究了Al_0.22Ga_0.78N/GaN调制掺杂异质结构中2DEG的子带占据性质和子带输运性质.在该异质结构的磁阻振荡中观察到了双子带占据现象，并发现2DEG的总浓度随第二子带浓度的变化呈线性关系.得到了该异质结构中第二子带被2DEG占据的阈值电子浓度为7.3×10¹²cm^-2.采用迁移率谱技术得到了不同样品的分别对应于第一和第二子带的输运迁移率.发现当样品产生应变弛豫时第一子带的电子迁移 关键词： AlGaN/GaN异质结 二维电子气 子带占据 输运迁移率     

Al组分对MOCVD制备的AlxGa1-xN/AlN/GaN HEMT电学和结构性质的影响

采用金属有机化合物化学气相沉积（MOCVD）方法制备了不同Al组分（x=0.19,0.22,0.25,0.32）的Al_xGa_1-xN/AlN/GaN 结构的高电子迁移率晶体管（HEMT）材料。研究了Al_xGa_1-xN势垒层中Al组分对HEMT材料电学性质和结构性质的影响。研究结果表明,在一定的Al组分范围内,二维电子气（2DEG）浓度和迁移率随着Al组分的升高而增大。然而,过高的Al组分导致HEMT材料表面粗糙度增大,2DEG迁移率降低,该实验现象在另一方面得到了原子力显微镜测试结果的验证。在最佳Al组分（25%）范围内,获得的 HEMT材料的2DEG浓度和室温迁移率分别达到1.2×10¹³ cm^-2和1 680 cm²/（V·s）,方块电阻低至310 Ω/□。     

Hot electrons and phonons in quantum-well AlxGa1-xAs-GaAs heterostructures

Formulas are presented to calculate the heating of charge carriers and the generation of nonequilibrium phonons by intense photoexcitation of quantum-well heterostructures. It is shown that the deviations from thermal equilibrium are more pronounced for quasi-two-dimensional structures than for bulk material. Supporting experimental data are given on an MO-CVD Al_xGa_1-xAs-GaAs heterostructure consisting of a large GaAs quantum well (L_z ～ 200 Å) coupled to a phonon-generating array of seven small GaAs quantum wells (L_z ～ 50 Å).     

Pressure influence on the Stark effect of impurity states in a strained wurtzite GaN/AlxGa1-xN heterojunction

A variational method is adopted to investigate the properties of shallow impurity states near the interface in a free strained wurtzite GaN/AlxGa1-xN heterojunction under hydrostatic pressure and external electric field by using a simplified coherent potential approximation. Considering the biaxial strain due to lattice mismatch or epitaxial growth and the uniaxial strains effects, we investigated the Stark energy shift led by an external electric field for impurity states as functions of pressure as well as the impurity position, Al component and areal electron density. The numerical result shows that the binding energy near linearly increases with pressure from 0 to 10 GPa. It is also found that the binding energy as a function of the electric field perpendicular to the interface shows an un-linear red shift or a blue shift for different impurity positions. The effect of increasing x on blue shift is more significant than that on the red shift for the impurity in the channel near the interface. The pressure influence on the Stark shift is more obvious with increase of electric field and the distance between an impurity and the interface. The increase of pressure decreases the blue shift but increases the red shift.     

Effect of Indium Ambient on Electrical Properties of Mg-Foped AlxGa1-xN

Mg-doped AlxGa1-xN epilayers were grown on AlN/sapphire templates by metal organic chemical vapor depo- sition （MOCVD） using an indium-assisted growth method. At room temperature, the resistivity of Mg-doped Alo.43Gao.57N epilayer grown under indium （In） ambient is of the order of 10^4Ω.cm, while the resistivity of Mg-doped Al0.43Ga0.57N grown without In assistance is of the order of 10^6Ω.cm. The ultraviolet light-emitting diodes （UV-LEDs） using the In-assisted Mg-doped Al0.43Ga0.57N as the p-type layers were fabricated to verify the function of indium ambient. It is found that there are a lower turn-on voltage and a lower diode series resistance in the UV-LEDs fabricated with p-type Al0.43Ga0.57 N layers grown under In-ambient.     

用肖特基电容电压特性数值模拟法确定调制掺杂AlxGa1-xN/GaN异质结中的极化电荷

研究发展了用肖特基电容电压特性数值模拟确定调制掺杂Al_xGa_1-xN/GaN异质结中极化电荷的方法.在调制掺杂的Al_0.22Ga_0.78N/GaN异质结上制备了Pt肖特基接触,并对其进行了C-V测量.采用三维费米模型对调制掺杂的Al_0.22Ga_0.78N/GaN异质结上肖特基接触的C-V特性进行了数值模拟,分析了改变样品参数对C-V特性的影响.利用改变极化电荷、n-AlGaN 关键词： xGa_1-xN/GaN异质结')" href="#">Al_xGa_1-xN/GaN异质结 极化电荷 电容电压特性 数值模拟     

Different temperature dependence of carrier transport properties between AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures

The temperature dependence of carrier transport properties of AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures has been investigated.It is shown that the Hall mobility in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures is higher than that in Al0.25Ga0.75N/GaN heterostructures at temperatures above 500 K,even the mobility in the former is much lower than that in the latter at 300 K.More importantly,the electron sheet density in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures decreases slightly,whereas the electron sheet density in Al0.25Ga0.75N/GaN heterostructures gradually increases with increasing temperature above 500 K.It is believed that an electron depletion layer is formed due to the negative polarization charges at the InyGa1-yN/GaN heterointerface induced by the compressive strain in the InyGa1-yN channel,which e-ectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures.