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1.
富勒烯作为过渡层生长金刚石薄膜研究   总被引:1,自引:0,他引:1  
杨国伟  刘大军 《光学学报》1996,16(5):75-678
采用微波等离子体化学气相淀积法,以C60膜过渡层,在光滑的单晶Si衬底(100)表面的研磨的石英衬底表面等光学衬底上,首次在无衬底负偏压条件下生长出多晶金刚石薄膜,通过扫描电镜观察到生长膜晶粒呈莱花状,生长表面为金刚石(100)界面。  相似文献   

2.
离子的轰击对Si衬底上金刚石核附着力的影响   总被引:1,自引:0,他引:1       下载免费PDF全文
利用扫描电子显微镜和原子力显微镜对负衬底偏压增强金刚石核化的过程进行了分析,从理论上探索了负衬底偏压作用下离子的轰击效应增强金刚石核在Si衬底上附着力的机理,给出了金刚石核与衬底的附着力和衬底负偏压之间的关系.  相似文献   

3.
 在微波等离子体化学气相沉积装置中,研究了金刚石薄膜在Si (100)面上的负偏压形核行为,结果表明,偏压大小对金刚石的形核均匀性有显著影响,而甲烷浓度主要影响形核时间,对金刚石的最大核密度影响不大。在硅片尺寸小于钼支撑架时,形核行为存在明显的边缘效应,即在偏压值低于-150 V时,硅片边缘金刚石核密度急剧降低,远低于硅片中央;在甲烷浓度比较低时,硅片边缘核密度要高于中间。研究表明,造成这种现象的主要原因是硅片下的钼支撑架发射电子所致,过量的原子H对金刚石的形核是不利的。  相似文献   

4.
利用扫描电子显微镜和原子力显微镜对负衬底偏压增强金刚石核化的过程进行了分析,从理论上探索了负衬底偏压作用下离子的轰击效应增强金刚石核在Si衬底上附着力的机理,给出了金刚石核与衬底的附着力和衬底负偏压之间的关系.  相似文献   

5.
杨国伟 《物理》1996,25(5):294-297
实现金刚石薄膜的异质外延是目前CVD金刚石薄膜制研究的主要奋斗目标,而直流负偏压增强金刚石成核法被认为是达到这一目标的有效途径。文章简要评述了微波等离子体CVD制备金刚石薄膜中的直流负偏压增强成核法,以及由此而发展的直流正偏压增强成核法和叠加交流成分的直流负偏压增强成核法,介绍了它们在异质外延金刚石薄膜中的应用。  相似文献   

6.
在p型硅(100)衬底上,采用衬底负偏压微波等离子体CVD方法进行了p型异质外延金刚石膜的生长.用O2等离子体刻蚀技术将金刚石膜刻蚀成长条形,利用四探针法在0—5T的磁场范围内测量了样品的磁阻.实验结果表明,p型异质外延金刚石膜可以产生较大的磁阻.在Fuchs-Sondheimer(F-S)薄膜理论的基础上考虑晶格散射、杂质散射和表面散射,通过求解Boltzmann方程,利用并联电阻模型研究了p型异质外延金刚石膜的磁阻效应,给出了磁阻和金刚石膜厚度、迁移率、空穴密度及磁场的关系.讨论了表面散射和价带形变对p型异质外延金刚石膜磁阻的影响,初步解释了p型异质外延金刚石膜产生较大磁阻的原因 关键词: 金刚石膜 异质外延 磁阻效应 电导率  相似文献   

7.
 采用直流磁控溅射加负偏压的方法制备了Ti膜,研究了不同偏压条件对Ti膜沉积速率、密度、生长方式及表面形貌的影响。随着偏压逐渐增大,Ti膜沉积速率分三个阶段变化:0~ -40 V之间沉积速率基本不变; -40~ -80 V之间沉积速率迅速降低;超过-80 V后沉积速率随偏压的下降速度又放缓。Ti膜密度随偏压增加而增大,负偏压为-119.1 V时开始饱和并趋于块体Ti材密度。加负偏压能够抑制Ti膜的柱状生长方式;偏压可以改善Ti膜的表面形貌,对于40 W和100 W的溅射功率,负偏压分别在-100 V和-80 V左右时制备出表面光洁性能较佳的Ti膜。  相似文献   

8.
 采用磁控溅射方法,在金刚石表面镀覆活性金属Cr膜和Ti膜,在高温高压下合成了镀活性金属膜金刚石/铜复合材料。实验发现,活性金属的加入增强了金刚石与铜界面间的结合强度,减少了界面热阻,提高了复合材料的热导率。复合材料热导率随着金刚石体积分数的增加而降低,随着金刚石的粒度增大而提高。这主要是由界面热阻引起的,可以通过增大金刚石粒度和改善界面状态来提高复合材料热导率。  相似文献   

9.
孟亮  张杰  朱晓东  温晓辉  丁芳 《物理学报》2008,57(4):2334-2339
利用热丝辅助双偏压氢等离子体对化学气相沉积金刚石薄膜进行了纳米尺度上的表面改装,制造出锥状金刚石列阵.金刚石薄膜内在的柱状结构使氢离子在刻蚀薄膜时产生非均匀的刻蚀速率,对锥状表面的形成起着重要作用.另一方面,溅射出的含碳粒子会发生二次沉积,最终的特征表面形貌取决于刻蚀与含碳基团再沉积之间的相互竞争.栅极的使用影响基底区域放电的伏安特性,改变栅极电流可以对形成的金刚石特征表面结构进行有效调节.在处理过程中少量掺入甲烷,提高了金刚石表面附近的含碳基团浓度,促进二次成核,进而诱发均匀分布的锥状列阵. 关键词: 等离子体 表面 金刚石薄膜  相似文献   

10.
采用等离子体预处理技术和优化的金刚石薄膜沉积工艺,以期为金刚石薄膜涂层工具的制备开发一种新的实用易行的表面预处理方法。等离子体预处理和金刚石薄膜沉积都在自行研制的热丝CVD系统中进行的。等离子体预处理是在脱炭气氛中进行,基体温度控制在硬质合金的再结晶温度范围内,处理总时间为2h。  相似文献   

11.
Q.P. Wei  Z.M. Yu  L. Ma  J. Ye 《Applied Surface Science》2009,256(5):1322-1328
A tungsten-carbide gradient coating (WCGC) was prepared by reactive sputtering as an intermediate layer on the cemented carbide, WC-13 wt.% Co, substrate to improve the nucleation, smoothness and adhesion of diamond film. The diamond film was deposited by hot filament chemical vapor deposition (HFCVD). The effects of the substrate temperature on the WCGC and the diamond film were investigated. The characterization of the WCGC and the diamond films was analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), micro-Raman spectroscopy and Rockwell hardness indentation. It is found that the WCGC plays an important role in improving the nucleation, smoothness and adhesion of diamond film; and the diamond films exhibit better quality and adhesion as substrate temperature increases during the CVD processes.  相似文献   

12.
Diamond films deposited on tungsten carbide can lead to major improvements in the life and performance of cutting tools. However, deposition of diamond onto cemented tungsten carbide (WC-Co) is problematic due to the cobalt binder in the WC. This binder provides additional toughness to the tool but results in poor adhesion and low nucleation density of any diamond film. A two-step chemical etching pretreatment (Murakami reagent and Caro acid, (MC)-pretreatment) and a boronization pretreatment have both been used extensively to improve adhesion of CVD diamond film on WC-Co substrates. Here we discuss the applicability of MC-pretreatment for a range of Co-containing WC-Co substrates, and demonstrate a controlled synthesis process based on liquid boronizing pretreatment for obtaining smooth and dense micro- or nano-crystalline diamond films on high Co-containing WC-Co substrates. Substrate treatments and deposition parameters were found to have major influences on the smoothness, structure and quality of the diamond films. The best quality diamond films were achieved under conditions of relatively high substrate temperature (Ts) and the best adhesion was achieved at Ts = 800 °C.  相似文献   

13.
金刚石薄膜的结构特征对薄膜附着性能的影响   总被引:4,自引:1,他引:3       下载免费PDF全文
在不同实验条件下,用微波等离子体化学气相沉积设备在硬质合金(WC+6%Co)衬底上沉积了 具有不同结构特征的金刚石薄膜.用Raman谱表征薄膜的品质和应力,用压痕实验表征薄膜的 附着性能,考察了薄膜中sp2杂化碳含量、形核密度、薄膜厚度对薄膜附着性能 的影响.结 果表明:sp2杂化碳的缓冲作用使薄膜中sp2杂化碳的含量对薄膜中 残余应力有较大的影 响,从而使薄膜压痕开裂直径统计性地随sp2杂化碳含量的增加而减小;仅仅依 靠超声遗 留的金刚石晶籽提高形核密度并不能有效改变薄膜与硬质合金基体之间的化学结合状况,从 而不能有效提高薄膜在衬底上的附着性能;在薄膜较薄时,晶粒之间没有压应力的存在,开 裂直径并不明显随厚度增加而增加,只有当薄膜厚度增加到一定值,晶粒之间才有较强压应 力存在,开裂直径随厚度的增加而较为迅速地增加. 关键词: 金刚石薄膜 附着性能 2杂化碳')" href="#">sp2杂化碳 成核密度 薄膜厚度  相似文献   

14.
In this paper, the growth of polycrystalline chemical vapour deposition (CVD) diamond thin films on fused silica optical fibres has been investigated. The research results show that the effective substrate seeding process can lower defect nucleation, and it simultaneously increases surface encapsulation. However, the growth process on glass requires high seeding density. The effects of suspension type and ultrasonic power were the specific objects of investigation. In order to increase the diamond density, glass substrates were seeded using a high-power sonication process. The highest applied power of sonotrode reached 72 W during the performed experiments. The two, most common diamond seeding suspensions were used, i.e. detonation nanodiamond dispersed in (a) dimethyl sulfoxide and (b) deionised water. The CVD diamond nucleation and growth processes were performed using microwave plasma assisted chemical vapour deposition system. Next, the seeding efficiency was determined and compared using the numerical analysis of scanning electron microscopy images. The molecular composition of nucleated diamond was examined with micro-Raman spectroscopy. The sp3/sp2 band ratio was calculated using Raman spectra deconvolution method. Thickness, roughness, and optical properties of the nanodiamond films in UV–vis wavelength range were investigated by means of spectroscopic ellipsometry. It has been demonstrated that the high-power sonication process can improve the seeding efficiency on glass substrates. However, it can also cause significant erosion defects at the fibre surface. We believe that the proposed growth method can be effectively applied to manufacture the novel optical fibre sensors. Due to high chemical and mechanical resistance of CVD diamond films, deposition of such films on the sensors is highly desirable. This method enables omitting the deposition of an additional adhesion interlayer at the glass–nanocrystalline interface, and thus potentially increases transmittance of the optical system.  相似文献   

15.
Control of cell adhesion to surfaces is important to develop analytical tools in the areas of biomedical engineering. To control cell adhesiveness of the surface, we constructed a variety of plasma polymerized hexamethyldisiloxane (PPHMDSO) thin films deposited at the plasma power range of 10-100 W by plasma enhanced chemical vapor deposition (PECVD). The PPHMDSO film that was formed at 10 W was revealed to be resistant to cell adhesion. The resistance to cell adhesion is closely related to physicochemical properties of the film. Atomic force microscopic data show an increase in surface roughness from 0.52 nm to 0.74 nm with increasing plasma power. From Fourier transform infrared (FT-IR) absorption spectroscopy data, it was also determined that the methyl (-CH3) peak intensity increases with increasing plasma power, whereas the hydroxyl (-OH) peak decreases. X-ray photoelectron spectroscopy data reveal an increase in C-O bonding with increasing plasma power. These results suggest that C-O bonding and hydroxyl (-OH) and methyl (-CH3) functional groups play a critical part in cell adhesion. Furthermore, to enhance a diversity of film surface, we accumulated the patterned plasma polymerized ethylenediamine (PPEDA) thin film on the top of the PPHMDSO thin film. The PPEDA film is established to be strongly cell-adherent. This patterned two-layer film stacking method can be used to form the selectively limited cell-adhesive PPEDA spots over the adhesion-resistant surface.  相似文献   

16.
To evaluate the effect of substrate morphology on the adhesion of diamond film, two types of substrate morphology of molybdenum (Mo) were compared. The two morphology types were formed by polishing a Mo substrate with SiC abrasive paper along one direction (anisotropic morphology) and by polishing the Mo substrate with diamond powder in a random direction (isotropic morphology).Ultrasonic cavitation tests were conducted to evaluate the adhesion of the diamond films on these Mo substrates. In the case of low surface roughness, there was very little difference between the effects of SiC abrasive paper polishing and diamond powder polishing. In the case of high surface roughness, the adhesion of the diamond film on the SiC paper polished Mo substrate was larger than that of the diamond film on the diamond powder polished Mo substrate. Detachment of the diamond film from the SiC paper polished Mo substrate progressed along the polishing direction; while detachment of the diamond film from the diamond powder polished Mo substrate progressed in a random direction. It was thought that the detachment of the diamond film from a Mo substrate having an anisotropic polishing trace was suppressed because the anisotropic grooves restricted the formation of connections between the points of detachment at right angles to the groove direction. Therefore, the anisotropic surface morphology of the Mo substrate is effective for improving the adhesion of diamond film.  相似文献   

17.
梁中翥  梁静秋  郑娜  姜志刚  王维彪  方伟 《物理学报》2009,58(11):8033-8038
采用微波等离子体化学气相沉积(MW-PCVD)和直流热阴极辉光放电等离子体化学气相沉积(DC-PCVD)两种方法相结合,制备出一种吸收辐射的复合金刚石膜,它对宽光谱范围的光辐射具有99%—99.2%的吸收率,同时具有较低的反射率和透过率.随着黑色吸收辐射金刚石层厚度的增加,复合金刚石膜的热导率将小幅度降低,但黑色金刚石膜层厚度小于15 μm时,复合金刚石膜的热导率都在16 W·cm-1·K-1以上,这满足吸收辐射复合金刚石膜的高导热需求.用热阴极DC-PCVD方 关键词: 吸收辐射 光学材料 金刚石 热导率  相似文献   

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