多孔硅表面钝化对其发光性能的影响

报道多孔硅（ＰＳ）的表面钝化对其光致发光（ＰＬ）和电致发光（ＥＬ）的影响,ＰＬ和ＥＬ谱表明,经钝化处理的ＰＳ的ＰＬ和ＥＬ强度明显增强,且发光峰位较大蓝移;存放实验表明,经钝化处理的ＰＳ的ＰＬ和ＥＬ发光强度和发光峰位具较好的稳定性;Ｉ～Ｖ曲线显示,经钝化处理的ＰＳ发光器件具有较低的劝电压,结结果表明：用钝化处理的方法是几ＰＬ和ＥＬ强度和稳定性及改善器件性能的有效途径。     

发光不衰减的多孔硅

用一种新的方法制备出了具有不同衰减的光致发光特性的多孔硅。如此制备的多孔硅新鲜样品,其发光峰位强度比普通多孔硅高２￣２．５倍,将样品在室温下暴露于空气中,其发光强度在前４个月中单调增加,然后达到饱和。在随后的８个月中,没有观察到发光衰减,发光峰位也没有发生变化,这种发光稳定性被归因子于多孔硅表面所形成的稳定的Ｆｅ－Ｓｉ键。文章探讨了发光不衰减、峰位不蓝移的机理,并为多孔硅发光的量子限域模型提供了强     

提高多孔硅传感特性的一种新方法(英文)

研究了多孔硅(PS)吸附有机溶剂分子后对多孔硅荧光谱的淬灭效应。结果表明:淬灭多孔硅发光的有机溶剂分子是极性分子,有机溶剂分子的极性不同对多孔硅发光的淬灭程度也不同,且有些有机溶剂分子吸附氧化多孔硅比吸附多孔硅引起的发光淬灭具有更好的可逆性和选择性;用含有胺基的正丁胺(CH3CH2CH2CH2-NH2)作碳源,用射频辉光放电等离子系统在多孔硅表面沉积c n膜对多孔硅进行钝化处理后发现:其电致发光强度明显增强,发光峰位兰移,且在大气中存放60天后,其电致发光谱强度基本不衰减,峰位不再移动。经钝化处理的器件较未经处理的器件具有小的串联电阻Rs和低的驱动电压。这为提高多孔硅的传感特性提供了一种新方法。     

多孔硅的一种新的后处理方法──微波等离子体辅助钝化处理

报道了对多孔硅进行后处理的一种新方法，即真空中微波等离子体辅助的钝化处理．傅里叶变换红外吸收谱表明，经处理的样品表面主要是被SiS_x和SiO_y所覆盖．与未经处理的样品相比，其发光强度增加约3.5倍，PL峰位蓝移了40nm，而且在空气条件下存放60d后发光强度没有变化．表明这种方法是增加多孔硅发光强度和提高稳定性的有效方法之一．     

发光多孔硅的表面氮钝化

报道对多孔硅在NH₃气中进行快速热处理的结果。红外吸收谱表明,经处理样品的表面由Si(NH)₂和Si₃N₄所覆盖,电子自旋共振谱指出,经处理的样品有相当低的悬挂键密度,光荧光谱表明,经适当条件处理的样品的发光强度与未作处理样品相比仅略有降低,而且在大气中存放三个月基本不变,这些结果表明,氮化物可以在多孔硅表面形成优良的钝化膜,这对多孔硅的实际应用及理论研究都有一定意义。     

铁钝化多孔硅中的输运性质

采用水热法制备了发光强度强且不衰减、峰位不蓝移的铁钝化多孔硅。标准四引线法测得的电阻一温度结果表明杂质能级是输运的主宰者;电流一电压结果说明当有电流流过样品时会有明显的热效应．考虑到金属电极和铁钝化多孔硅之间形成的肖特基势垒会对样品的输运性质产生影响,采用其平面的两引线法测量了铁钝化多孔硅样品在不同温度下的电流一电压特性,发现隧道模型可以很好地拟和这些结果这些研究结果指出作为未来的多孔硅光电集成器件;通过多孔硅的电流必须限定在一定的范围１引言 １９９０年英国的Ｌ．Ｔ,Ｃａｎｈａｍ首次成功获得在室…     

用氢钝化Si（100）面抑制分子束外延界面的硼尖峰

采用一种新的简便的氢钝化方法，可以在Ｓｉ（１００）衬底表面获得稳定的钝化层，用俄歇电子能谱，反射式高能电子衍射，Ｃ－Ｖ和二次离子质谱等方法对衬底表面及其上面生长的分子束处延层进行检测，发现这种方法可以有效地防止衬底表面被碳、氧沾污，降低退火温度至少２００℃，并完全消除处延层与Ｓｉ（１００）衬底界面处的高浓度硼尖峰，在此基础上，结合衬底表面锗束处理的实验结果，对硼尖峰的主要来源是由于硅衬底表面的氧化     

硅基低维半导体材料

Ｓｉ／Ｇｅ超晶格外延生长技术的发展和纳米硅（ｎｃ－Ｓｉ：Ｈ）多孔硅（ＰＳ）发光现象的发现，引起了们们对硅基低材料的关注，文章简要综述了近年来在Ｓｉ／Ｇｅ超晶格的电子态和光学性质以及ｎｃ－Ｓｉ：Ｈ，ＰＳ的结构和发光机理等方面的研究进展。     

金刚石膜/多孔硅复合材料的性能表征

提出了一种新颖的多孔硅表面钝化技术,即采用微波等离子体辅助的化学气相沉积（MPCVD）方法在多孔硅上沉积金刚石薄膜。采用原子力显微镜（AFM）、扫描电子显微镜（SEM）、X射线衍射仪（XRD）、拉曼光 谱仪和荧光分光度计对多孔硅及金刚石膜的表面形貌、结构和发光特性进行了表征。结果表明采用微波等离子体化学气相沉积法可在多孔硅基片上形成均匀、致密、性能稳定且对可见光具有全透性的金刚石膜。金刚石膜与多孔硅的复合,大大稳定了多孔硅的发光波长和强度,同时增强了多孔硅的机械强度。     

纳米(Y0.95Eu0.05)2O3及其SiO2气凝胶介孔组装体的制备与光致发光

采用尿素溶胶法合成（Ｙ０．９５Ｅｕ０．０５）２Ｏ３纳米粉,用超临界干燥技术制备了ｎ－（Ｙ０．９５Ｅｕ０．０５）２Ｏ３／ＳｉＯ２气凝胶介孔组装体。结果表明,当Ｙ＾３＋：Ｅｕ＾３＋＝２０：１,均相反应时间为４ｈ,且经６８０℃、４ｈ灼烧热处理后得到的ｎ－（Ｙ０．９５Ｅｕ０．０５）２Ｏ３中,光致发光强度最大（发光峰位于６１２ｎｍ）,以Ｓｉ与２Ｙ摩尔比为１：７的ｎ－（Ｙ０．９５Ｅｕ０．０５）２Ｏ３／ＳｉＯ２气凝胶介孔组装体,经同样条件热６１６ｎｍ）。对产生上述发光强度减弱和峰位红移现象进行讨论。     

Structure and photoluminescence properties of ZnS films grown on porous Si substrates

ZnS films were deposited on porous silicon (PS) substrates with different porosities. With the increase of PS substrate porosity, the XRD diffraction peak intensity decreases and the surface morphology of the ZnS films becomes rougher. Voids appear in the films, due to the increased roughness of PS structure. The photoluminescence (PL) spectra of the samples before and after deposition of ZnS were measured to study the effect of substrate porosity on the luminescence properties of ZnS/PS composites. As-prepared PS substrates emit strong red light. The red PL peak of PS after deposition of ZnS shows an obvious blueshift. As PS substrate porosity increases, the trend of blueshift increases. A green emission at about 550 nm was also observed when the porosity of PS increased, which is ascribed to the defect-center luminescence of ZnS. The effect of annealing time on the structural and luminescence properties of ZnS/PS composites were also studied. With the increase of annealing time, the XRD diffraction peak intensity and the self-activated luminescence intensity of ZnS increase, and, the surface morphology of the ZnS films becomes smooth and compact. However, the red emission intensity of PS decreases, which was associated with a redshift. White light emission was obtained by combining the luminescence of ZnS with the luminescence of PS.     

Efficient visible electroluminescence from porous silicon diodes with low driven voltage

By using n-butylamine as carbon resource, diamond-like carbon film (DLCF) was deposited on the p-n porous silicon (PS) surface by means of a radio-frequency glow discharge plasma system. Electroluminescent (EL) spectra show that EL intensity of the passivated PS diodes increases by 4.5 times and 30-nm blue-shift of EL peak occurs compared with the diodes without treatment and both of them are stable while the passivated diodes are exposed to the air indoor. The current-voltage (Ⅰ-Ⅴ) characteristics exhibit that the passivated diodes have a smaller series resistance and a lower onset voltage. The EL intensityvoltage (ⅠEL-Ⅴ) relations of the PS devices with different DLCF thicknesses show that only medium DLCF thickness is optimum. These experimental phenomena have been explained based on Raman spectra and IR spectra of the diamond-like carbon films and IR spectra of the passivated PS samples.     

The effect of PS porosity on the structure,optical and electrical properties of ZnS/PS

ZnS films were deposited on porous silicon (PS) substrates with different porosities by pulsed laser deposition (PLD). The crystalline structure, surface morphology of ZnS films on PS substrates and optical, electrical properties of ZnS/PS composites were studied. The results show that, ZnS films deposited on PS substrates were grown in preferred orientation along β-ZnS (111) direction corresponding to crystalline structure of cubic phase. With the increase of PS porosity, the XRD diffraction peak intensity of ZnS films decreases. Some voids and cracks appear in the films. Compared with as-prepared PS, the PL peak of PS for ZnS/PS has a blueshift. The larger the porosity of PS, the greater the blueshift is. A new green light emission located around 550 nm is observed with increasing PS porosity, which is ascribed to defect-center luminescence of ZnS. The blue, green emission of ZnS combined with the red emission of PS, a broad photoluminescence band (450–750 nm) is formed. ZnS/PS composites exhibited intense white light emission. The I–V characteristics of ZnS/PS heterojunctions showed rectifying behavior. Under forward bias conditions, the current density is large. Under reverse bias conditions, the current density nearly to be zero. The forward current increases with increasing PS porosity. This work lay a foundation for the realization of electroluminescence of ZnS/PS and solid white light emission devices.     

退火对ZnS/PS复合体系光致发光特性的影响

用脉冲激光沉积(PLD)技术以多孔硅(PS)为衬底生长了ZnS薄膜,分别测量了ZnS、PS以及ZnS/PS复合体系在室温下的光致发光(PL)光谱。结果发现,ZnS/PS复合体系的PL光谱中PS的发光峰位相对于新制备的PS有所蓝移。把该ZnS/PS样品分成三块,在真空400℃分别退火10,20,30 min,研究不同退火时间对ZnS/PS复合体系光致发光特性的影响。发现退火后样品的PL光谱中都出现了一个新的绿色发光带,归结为ZnS的缺陷中心发光。随着退火时间的延长,PS的发光强度逐渐降低且峰位红移。把ZnS的蓝、绿光与PS的红光相叠加,整个ZnS/PS复合体系在可见光区450~700 nm形成一个较宽的光致发光谱带,呈现较强的白光发射。     

激光促进多孔硅内表面氧化与光致发光的退化

本文对刚制备的以及分别经以下三种情况:1.样品在1大气压的氧气中经激光(Ar~+激光器的48.80nm线,功率密度为1.77W/cm~2)连续照射1小时;2.样品在1大气压的氧气中在没有激光照射的情况下保持1小时;3.样品在1.3×10~2Pa真空度下用激光连续照射1小时处理后的多孔硅在室温下进行了光致发光谱和傅里叶变换红外吸收测量,研究了处理前后光谱的变化。实验发现经第一种情况处理后光致发光峰位蓝移了约0.1eV,发光强度衰减了二十几倍,相应的其红外光谱中与氧有关的吸收峰强度大幅度增长,而经第二,三两种情况处理后它们的光致发光及红外吸收谱则无大的变化。研究表明在氧气中激光辐照能大大加速多孔硅内表面的氧化。我们认为很可能是多孔硅内表面的氧化作用使光致发光峰位蓝移,由氧化作用产生的非辐射复合中心导致光致发光效率的下降。     

Synchrotron radiation studies of the orientation of thin silicon phthalocyanine dichloride film on HOPG substrate

Thin silicon Phthalocyanine dichloride films on HOPG were prepared and the sample was heated in the vacuum with laser.The thickness of the thin sample on HOPG was checked by X-ray photoemission spectroscopy.The orientation of the molecules in respect to the substrate plane Was investigated by measuring the silicon K-edge near edge X-ray absorption fine structure(NEXAFS).In the NEXAFS spectra of the thin sample,two clear peaks which were assigned to 1s→σ*Si-N and 1s→σ*Si-C1 appeared around 1847.2 eV and 1843.1 eV respectively.The intensities of the resonance peaks showed strong polarization dependence.A quantitative analysis of the polarization dependence revealed that the Si-N bond tended to lie down while the Si-C1 bond was out of the molecular plane.     

Effect of annealing on structural, optical and electrical properties of ZnS/porous silicon composites

ZnS films were prepared by pulsed laser deposition (PLD) on porous silicon (PS) substrates. This paper investigates the effect of annealing temperature on the structural, morphological, optical and electrical properties of ZnS/PS composites by x-ray diffraction (XRD), scanning electron microscope (SEM), photoluminescence (PL) and I--V characteristics. It is found that the ZnS films deposited on PS substrates were grown in preferred orientation along β-ZnS (111) direction, and the intensity of diffraction peak increases with increasing annealing temperature, which is attributed to the grain growth and the enhancement of crystallinity of ZnS films. The smooth and uniform surface of the as-prepared ZnS/PS composite becomes rougher through annealing treatment, which is related to grain growth at the higher annealing temperature. With the increase of annealing temperature, the intensity of self-activated luminescence of ZnS increases, while the luminescence intensity of PS decreases, and a new green emission located around 550~nm appeared in the PL spectra of ZnS/PS composites which is ascribed to the defect-center luminescence of ZnS. The I--V characteristics of ZnS/PS heterojunctions exhibited rectifying behavior, and the forward current increases with increasing annealing temperature.     

氧化处理多孔硅的光致发光和发光衰减

用沸硫酸对多孔硅进行了处理,测量了它们的红外吸收光谱、光致发光光谱和发光衰减.对氢、氧的作用进行了讨论,发现氧的加入可使发光强度增加两个数量级,发光衰减变快.用三层发光模型对结果进行了讨论.