Fractal magnetic microstructure in the (Co<Subscript>41</Subscript>Fe<Subscript>39</Subscript>B<Subscript>20</Subscript>)<Subscript>x</Subscript>(SiO<Subscript>2</Subscript>)<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript> nanocomposite films

Magnetostructural methods are applied to determine the exchange bond percolation limit in (Co₄₁Fe₃₉B₂₀)_x(SiO₂)_1?x nanocomposites (x _c = 0.30 ± 0.02), which separates the phase plane along the metal concentration axis into a superparamagnetic region and a ferromagnetic region. It is shown that, with respect to the singularities of the magnetization up to the magnetization saturation curves, the ferromagnetic region is further subdivided into three regions differing in the character of the spatial propagation of the magnetization ripples or in the magnetic correlation function characteristics. The fractal dimension of the nanocomposite magnetic microstructure near the percolation threshold is determined.     

Optical activity of γ<Subscript>1</Subscript>-(Ga<Subscript>x</Subscript>In<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>)<Subscript>2</Subscript>Se<Subscript>3</Subscript> crystals

The optical activity of uniaxial γ₁-(Ga_xIn_1?x )₂Se₃ crystals (x=0.1, 0.2, 0.3, 0.4) is studied at T=295 and 77 K in the spectral range 0.5–0.8 πm. It is found that the cationic substitution In → Ga leads to a nonlinear increase in the specific rotation of the plane of polarization ρ and the component g ₃₃ of the gyration tensor. It is shown that the gyrotropy of the crystals studied is determined by high-energy transitions whose energy exceeds the energy of the edge transitions and that the gyrotropy observed has a molecular origin.     

Electron paramagnetic resonance in mixed crystals (BaF<Subscript>2</Subscript>)<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>(LaF<Subscript>3</Subscript>)<Subscript>x</Subscript> activated by Ce<Superscript>3+</Superscript> ions

The electron paramagnetic resonance (EPR) spectra of mixed crystals (BaF₂)_{1?x? y}(LaF₃)_x(CeF₃)_y (y = 0.001 = 0.1%, x = 0–0.02) are investigated in a magnetic field H‖C₄ at a frequency of 9.5 GHz. The angular dependence of the EPR spectrum is measured for the sample with x = 0.02. The lines attributed to Ce³⁺ impurity centers with tetragonal symmetry and g factors (g_‖ = 0.75, g_⊥ = 2.4) close to those measured for the KY₃F₁₀: Ce³⁺ compound are separated in the complex EPR spectrum. The assumption is made that the aforementioned impurity centers are cubooctahedral clusters of the La₆F₃₇ type in which one of the La³⁺ ions is replaced by the Ce³⁺ ion.     

Dielectric properties of CuInP<Subscript>2</Subscript>(Se<Subscript>x</Subscript>S<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>)<Subscript>6</Subscript> solid solutions

The dielectric properties of layered crystals of CuInP₂(Se_xS_1?x)₆ solid solutions are studied at x = 0.02, 0.05, 0.20, and 0.40. At a low selenium content (x ≤ 0.05), the solid solutions undergo a transition to the phase with short-range polar order. This transition manifests itself as a diffuse maximum in the temperature dependence of the permittivity ε′(T). Ferroelectric ordering in the solid solutions under investigation is suppressed at x > 1. It is assumed that the structural disordering initiated by the substitution of atoms in the anion sublattice of the solid solutions at 0.1 < x < 0.75 leads to the formation of the state of structured glass. The dielectric relaxation dispersion observed in the radio-frequency range at temperatures of 80–140 K is associated with the freezing of the relaxation dynamics of individual copper atoms.     

Thermal expansion of (Sr<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>La<Subscript>x</Subscript>)<Subscript>3</Subscript>Ru<Subscript>2</Subscript>O<Subscript>7</Subscript> single crystals at low temperatures

For single-crystal samples of the (Sr_1?xLa_x)₃Ru₂O₇ ruthenates, the temperature dependence of the thermal expansion coefficient α(T)) is measured in the range 4.2–80 K. The effect of magnetic fields H ≤ 3.5 T on thermal expansion is analyzed. It is found that the (Sr_1?xLa_x)₃Ru₂O₇ ruthenates exhibit an anomalous (negative) thermal expansion coefficient in the temperature range T ≤ 18 K. The position and width of the anomaly revealed in the temperature dependence of the thermal expansion coefficient α(T)) depend substantially on the magnetic field. The origin of the thermal expansion anomaly in ruthenates, the correlation of this anomaly with the stability of the crystal lattice, and the common nature of the anomalies in the thermal properties of ruthenates and high-temperature superconductors are discussed.     

Synthesis of compositionally controllable Cu<Subscript>2</Subscript>(Sn<Subscript>1−x</Subscript>Ge<Subscript>x</Subscript>)S<Subscript>3</Subscript> nanocrystals with tunable band gaps

In this work, we show that compositionally controlled Cu₂(Sn_1–xGe_x)S₃ nanocrystals can be successfully synthesized by the hot-injection method through careful tuning the Ge/(Sn+Ge) precursor ratio. The band gaps of the resultant nanocrystals are demonstrated to be linearly tuned from 1.45 to 2.33 eV by adjusting the composition parameter x of the Ge/(Sn+Ge) ratio from 0.0 to 1.0. The crystalline structures of the resultant NCs have been studied by the X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), select area electron diffraction (SAED), and Raman spectroscopy. A ligand exchange procedure is further performed to replace the native ligands on the surface of the NCs with sulfur ions. The photoresponsive behavior indicates the potential use of as-prepared Cu₂(Sn_1–xGe_x)S₃ nanocrystals in solar energy conversion systems. The synthesis of compositionally controlled Cu₂(Sn_1–xGe_x)S₃ nanocrystals reported herein provides a way for probing the effect of Ge inclusion in the Cu-Sn-S system thin films.     

The electric conductivity and dielectric properties of Tl(GaS<Subscript>2</Subscript>)<Subscript>1 – <Emphasis Type="Italic">x</Emphasis></Subscript>(InSe<Subscript>2</Subscript>)<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> solid solutions

The effect of composition and temperature on the electrical conductivity and the permittivity of the Tl(GaS₂)_{1 – x} (InSe₂) _x has been studied. It is found that the permittivity and the conductivity increase with temperature and vary linearly as the InSe₂ concentration increases: in this case, the conductivity decreases and the permittivity increases. It is confirmed that the system under study contains two series of solid solutions. It is shown that the commensurate–incommensurate phase transition temperatures shift to lower values as the InSe₂ concentration increases.     

Spectroscopic study of magnetic phase transitions in Nd<Subscript>x</Subscript>Gd<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Fe<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript>

Magnetic ordering and spin reorientation in iron borates Nd_xGd_1?xFe₃(BO₃)₄ (x = 0.01, 0.04, 0.25, 1.0) are studied using a rare-earth spectroscopic probe.     

Heat capacity of the Pb<Subscript>5</Subscript>(Ge<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Si<Subscript>x</Subscript>)<Subscript>3</Subscript>O<Subscript>11</Subscript> ferroelectric system

The temperature dependences of the molar heat capacity at constant pressure, C_p, of Pb₅(Ge_1?xSi_x)₃O₁₁ crystals with x=0, 0.39, and 0.45 in the range 5–300 K, as well as of their permittivity, dielectric losses, and the pyroelectric effect, have been measured. Experimental data on the temperature behavior of the heat capacity are presented in the form of a sum of two Debye and one Einstein terms, C_p(T)=0.405C_D1(Θ_D1=160 K, T)+0.53C_D2(Θ_D2=750 K, T)+0.046C_E(Θ_E=47 K, T). Besides a peak in the region of the ferroelectric Curie point T_c=450 K for crystals with x=0, the temperature dependences of the heat capacity did not reveal any other pronounced anomalies.     

Spectral-luminescent properties of AgLa<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Eu<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>(MoO<Subscript>4</Subscript>)<Subscript>2</Subscript> solid solutions

The luminescent properties of AgLa_{1 − x} Eu _x (MoO₄)₂ (x = 0.1, 0.2, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1.0) under laser excitation (λ = 337.1 nm) are studied. It is shown that, upon substitution of Eu³⁺ for La³⁺, the symmetry of luminescence centers does not vary. According to the X-ray diffraction data, all samples have scheelite-like structure; the pattern of variation in volumes of their unit cells counts in favor of the presence of a continuous series of solid solutions. It is found that an increase in the europium concentration in AgLa_{1 − x} Eu _x (MoO₄)₂ leads to an increase in the luminescence intensity with a maximum at x = 0.9.     

Spectral-luminescent properties of LiRbLa<Subscript>2 − <Emphasis Type="Italic">x</Emphasis></Subscript>Eu<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>(MoO<Subscript>4</Subscript>)<Subscript>4</Subscript> solid solutions

The luminescent properties of LiRbLa_{2 − x} Eu _x (MoO₄)₄ (x = 0.002, 0.02, 0.1, 0.2, 0.5, 1.0, 1.5, 2.0) solid solutions are investigated under laser excitation {λ_ex = 337.1 nm). It is established that the composition containing 50 at % Eu³⁺ is the brightest of the considered set of phosphors and has the highest quantum yield.     

Normal state conduction in Gd(Ba<Subscript>2–x</Subscript>Pr<Subscript>x</Subscript>)Cu<Subscript>3</Subscript>O<Subscript><Emphasis Type="Bold">7+δ</Emphasis></Subscript>

The normal state resistivity of single phase polycrystalline Gd(Ba_2–xPr_x)Cu₃O₇₊ samples with 0.0x0.50 have been investigated. There is a distinct metal-insulator transition at and a superconductor-insulator transition at with the increase of x. The two-dimensional variable range hopping is dominant in the normal state resistivity of the samples. The localization length, hopping range, and hopping energy of carriers show that Pr doping strongly localizes the carriers in normal state, and finally causes the suppression of superconductivity.     

Magnetocaloric effect in La(Fe<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Si<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>)<Subscript>13</Subscript> ferromagnets

The isothermal changes in the magnetic entropy and the lattice entropy and the adiabatic temperature change in La(Fe_0.88Si_0.12)₁₃ and La(Fe_0.86Si_0.14)₁₃ ferromagnets in a magnetic field are calculated. The calculations are performed with a generalized magnetostriction model of a ferromagnet; the calculation results are compared to experimental data. It is shown that the change in the lattice entropy decreases the magnetocaloric effect and makes it possible to explain the experimental data obtained for La(Fe _x Si_{1 − x} )₁₃ (x = 0.86, 0.88) ferromagnets. The temperature dependences of the bulk compression moduli of these ferromagnets are calculated, and these dependences indicate a strong lattice softening in the vicinity of the magnetic phase transition in them. The thermal expansion coefficient and some magnetic properties of the ferromagnet with x = 0.86 are measured to determine the numerical values of the parameters entering into calculation formulas.     

Growth and photoelectric properties of graded-gap Si-(Si<Subscript>2</Subscript>)<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>(GaP)<Subscript>x</Subscript> heterostructures

Theoretical grounds for formation of continuous substitutional solid solutions are analyzed taking into account the generalized moments, the difference in valence, and covalent radii of initial components. On the basis of these studies, the technology of formation of epitaxial (Si₂)_1?x(GaP)_t (0≤x≤1) layers on silicon substrates from the tin solution-melt using forced cooling is developed. The distribution of components over the thickness of Si-(Si₂)_1?x(GaP)_x layers, the photosensitivity, and the current-voltage characteristics of the Si-(Si₂)_1?x(GaP)_x heterostructures are studied. Analyses of the results of the X-ray studies and photoelectric properties of obtained solid-solution epitaxial layers indicate that the grown graded-gap (Si₂)_1?x(GaP)_x layers have a high structural quality.     

Negative magnetoresistance in binary distorted perovskites Ca(Cu<Subscript>x</Subscript>Mn<Subscript>3−<Emphasis Type="Italic">x</Emphasis></Subscript>)Mn<Subscript>4</Subscript>O<Subscript>12</Subscript>

The substitution of copper for manganese in one position of the double distorted perovskite Ca(Cu_xMn_3?x)Mn₄O₁₂ leads to a change in the valence of manganese atoms in the other position. This is accompanied by a sharp increase in the temperature of magnetic ordering and by a change in the conductivity type from semiconductor to metallic. These perovskites also exhibit a negative magnetoresistance in a broad temperature range, with the [ρ(H)?ρ(0)]× 100%/ρ(0) ratio (at liquid nitrogen temperature) reaching 10% in a field of 1 T.     

Transformation of dielectric properties and appearance of relaxation behavior in Pb<Subscript>5</Subscript>(Ge<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Si<Subscript>x</Subscript>)<Subscript>3</Subscript>O<Subscript>11</Subscript> crystals

The special features of the dielectric properties and conduction of ferroelectric crystals of Pb₅(Ge_1?xSi_x)₃O₁₁ (0 ≤ x ≤ 0.67) solid solutions were studied. Permittivity anomalies close to the temperatures T₁ ≈ 260 K and T₂ ≈ 130 K, the appearance of relaxator behavior at x > 0.35, and critical behavior of the concentration dependences of dielectric and pyroelectric characteristics at x₁ = 0.35 and x₂ = 0.60 were observed and studied. These phenomena were found to be related to the dynamics of charge localization on defects with activation energies of U_a1 ≈ 0.6 eV and U_a2 ≈ 0.23 eV. Relaxator behavior appears when the Curie point lies in the temperature region of thermal charge localization. The concentration dependence features at x₁ and x₂ are explained by the coincidence of the Curie point and the centers of the temperature regions of charge localization on the U_a1 and U_a2 defect levels, respectively.     

Superconductivity and metal-insulator transition in Cu(Ir<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Rh<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>)<Subscript>2</Subscript>S<Subscript>4</Subscript>

A new thiospinel CuIr₂S₄ exhibits a metal-insulator (M-I) transition at 226 K, while CuRh₂S₄ shows a superconducting transition at 4.70 K. We present a systematic study of electrical and magnetic properties of Cu(Ir_1?x Rh _x )₂S₄. TheM-I transition of CuIr₂S₄ is accompanied by a structural phase transition from tetragonal symmetry in insulating phase to cubic symmetry in high temperature metallic phase. With increasing Rh contentx, the sharpM-I transition shifts to lower temperature forx≦0.10. The samples show semiconductive behavior for 0.10≦0.30 between 4.2 and 300 K, and recover the metallic state forx≧0.50. The superconducting transition may occur for very close tox=1.00. Magnetic susceptibility shows the jump at theM-I transition temperature and the variation ofx leads to a systematic change of the magnetic susceptibilities, which is consistent with the electrical characteristic feature.     

Raleigh and Mandelshtam-Brillouin light scattering in chalcogenide glasses of the (As<Subscript>2</Subscript>S<Subscript>3</Subscript>)<Subscript>x</Subscript>I<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript> system

Raleigh and Mandelshtam-Brillouin light scattering has been investigated in chalcogenide glasses of the (As₂S₃)_xI_1−x system for x = 1.00−0.80. Longitudinal hypersound velocities, adiabatic elastooptical constants (p₁₂)_ad at frequencies of ∼15 GHz, and Landau-Placzek ratios R_LP are found and scattering losses are calculated. Significant iodine additives are shown to result in the appearance of different features in the behavior of concentration dependences of the investigated parameters. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 6, pp. 814–818, November–December, 2008.     

Inhomogeneous magnetic states in the Nd(Mn<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Cr<Subscript>x</Subscript>)O<Subscript>3</Subscript> system

The crystal structure and magnetic properties of the Nd(Mn_?xCr_x)O₃ system (x≤0.85) have been studied. Substitution of chromium for manganese was shown to induce a transition from the antiferromagnetic to ferromagnetic state (x≈0.2) and a decrease in the critical temperature followed, conversely, by an increase in the Néel temperature and decay of spontaneous magnetization. At low temperatures, the magnetization was found to behave anomalously as a result of magnetic interaction between the ferromagnetic and antiferromagnetic phases. The formation of the ferromagnetic phase is attributed to destruction of cooperative static orbital ordering, while the coexistence of different magnetic phases is most probably due to internal chemical inhomogeneity of the solid solutions.     

Magnetic moments and hyperfine magnetic fields in ordered and disordered quasi-binary Fe<Subscript>75</Subscript>(Si<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript>x</Subscript>)<Subscript>25</Subscript> alloys

Disordered and DO₃ type-ordered Fe₇₅(Si_1?xGe_x)₂₅ alloys are fabricated and investigated using x-ray diffraction, Mössbauer spectroscopy, and magnetic measurements. The variations in the magnetic and Mössbauer characteristics are interpreted using ab initio calculations of the electronic structure, magnetic moments, hyperfine magnetic fields, and isomer shifts. The main differences in the properties are related to the increase in the crystal lattice parameter when Si is replaced by Ge in ordered alloys and to a different behavior of the correlations in the Si and Ge positions in disordered alloys.