正电子湮没与高科技

本文简要描述了正电子湮没技术的基本原理和常用的四种实验方法(正电子寿命测量、湮没辐射角关联测量、多普勒展宽能谱测量和慢正电子束技术)。介绍了正电子湮没技术在材料科学研究中的某些独特优点:如研究金属、合金与半导体材料中的缺陷和相变,测量金属的费米面和空位形成能以及研究辐照损伤等。此外,还报导了正电子湮没在医学(正电子照像)、空间技术、生命科学以及高温超导等高科技领域的最新应用进展。     

正电子湮没与高科技

本文简要描述了正电子湮没技术的基本原理和常用的四种实验方法(正电子寿命测量、湮没辐射角关联测量，多管勒展宽能谱测量和慢正电子束技术)。介绍了正电子湮没技术在材料科学研究中的某些独特忧点；如研究金属，合金与半导体材料中的缺陷和相变，测量金属的费米面和空位形成能以及研究辐照损伤等。此外，还报导了正电子湮没在医学(正电子照像)、空间技术、生命科学以及高温超导等高科技领域的最新应用进展。     

过电压简易报警器

1989年由世界银行贷款购入的美国ORTEC公司生产的“正电子寿命谱仪”以其探测效率高、分辨率好等优点被国内十几所高校购用。要测量到一个正电子湮没寿命谱,就必须对足够多的湮没事件(定数一般在10~3个)进行统计,一般需用4～8小时或更长,在仪器工作状态下,电压的波动是     

利用BaF2晶体快速闪烁发光性质改进正电子湮没寿命谱仪

测量BaF2晶体闪烁发光长短两种寿命成分的光电子产额,利用它的短成分发光极快的特点研制核辐射探测中的定时探测器,采用于正电子湮没寿命谱仪中使谱仪的时间分辨率由FWHM=270ps(ps:微微秒)改进到190ps(计数效率不改变)或者使计数效率提高10倍(时间分辨率相同)。     

六、核分析技术

北京慢正电子强束流依托于北京正负电子对撞机(BEPC)电子直线加速器(LINAC)，利用其完成注入后的剩余时间，产生高强度、高亮度、低能单色正电子束流，应用于材料科学尤其是材料表面特性的研究。该装置的建成弥补了我国现有的基于放射性同位素的慢正电子束流装置正电子强度较弱的不足，拓展了慢正电子技术在材料科学和微观核探针方法学中的应用领域，为进一步建立慢正电子湮没寿命测量、正电子诱导俄歇电子能谱测量以及低能正电子衍射和正电子显微镜等方法奠定了基础。     

不同气氛下多孔硅中电子偶素湮没行为研究

使用正电子湮没谱学方法,在不同气氛下对电化学腐蚀法制备的多孔硅中电子偶素的湮没行为进行了系统的研究.正电子湮没寿命谱测试结果表明,样品中存在长达40 ns的电子偶素湮没成分,并且进入多孔硅膜层的正电子约有80%形成电子偶素,具有非常高的电子偶素产额;在氧气气氛下,由于气体导致o-Ps发生自旋转化猝灭是使多孔硅样品中电子偶素寿命缩短的主要原因.结合正电子寿命-动量关联谱测量结果,分析了不同气氛下多孔硅样品中电子偶素湮没寿命及动量变化关系,讨论了多孔硅中电子偶素的湮没机理以及气氛对孔径计算理论模型的影响. 关键词： 电子偶素 正电子湮没谱学方法 多孔硅     

北京慢正电子强束流运行性能测试

慢正电子强束流采用高能脉冲电子束流轰击金属钽靶, 以产生正负电子对的方式提供正电子, 作为慢正电子束流方法学研究和薄膜材料缺陷研究的束流基础. 本文是在该装置实现运行后, 对慢正电子束流的强度、能散、形貌等运行性能的测试工作的介绍, 以及慢正电子湮没多普勒测量系统的调试和标准样品的测量结果.     

合肥光源测量束团纵向精细结构的单光子计数系统设计

本文介绍了用单光子计数法测量束团纵向精细结构的原理.介绍了合肥同步辐射光源测量束团纵向精细结构的单光子计数系统的设计.由于单光子计数法具有高时间分辨率(2ps)和大的动态测量范围(10⁵)等优点,所以该系统不仅可以测量束团长度,而且可以精密测量单束团的纯净度.最后,分析了该系统的性能,并讨论了该系统在尾场和纵向阻抗的研究、束团伸长效应的研究以及影响单束团不纯净机理的研究中的应用.     

金刚石膜微结构的慢正电子束测量研究

用慢正电子束辅助以拉曼光谱方法对一批较高质量的PECVD金刚石膜的微结构进行测量研究．拉曼光谱实验结果显示,这批金刚石膜中金刚石相含量比较高,正电子湮没实验进一步从微观结构上指出各个金刚石膜之间存在很大差异,并且从缺陷角度发现各样品中缺陷尺寸和缺陷浓度不一样,造成膜质量不同．S-E曲线变化趋势反映出各样品金刚石晶体结构存在明显不同．这表明正电子湮没技术是测量金刚石膜微结构的有力手段．     

MgB2超导体的正电子湮没研究

本文利用正电子湮没技术（PAT）对不同密度的MgB2样品分别进行了测定，结果发现正电子在MgB2中自由态的湮没时间（本征寿命τ1）和在捕获态的湮没时间（缺陷寿命τ2）比其他高温超导体都明显要高，这反映了MgB2的体电子浓度相对于其它超导体要低，可能归因于MgB2超导材料本身的晶体结构和化学组成，MgB2超导材料的正电子寿命不仅与晶体的结构缺陷，而且与样品的密度或孔隙度有关．     

Performance of the Beijing pulsed variable-energy positron beam

In order to study the depth-dependent characteristics of open-volume defects in thin surface layers, the variable-energy positron lifetime spectroscopy (VEPLS) has been enabled by pulsing a continuous positron beam. The buncher is a quarter-wave coaxial resonator and the RF-signal is fed in by a coupling loop with a frequency of 149.89 MHz and the reflection factor of 0.05 measured by a Network Analyzer. Three synchronic signals with their phases and amplitudes adjusted independently are supplied for start signal of the positron lifetime measurement and the power signal by an electronic system. The stop signal is derived from a detector, a BaF₂ scintillator coupled to a photomultiplier-tube (Hamamatsu). The time resolution of 295 ps (FWHM) was achieved for a Kapton film and a Ti sample at positron energies in the range between 1 keV and 30 keV.     

An intense pulsed positron beam

A positron pulsing system for an intense positron beam generated by an electron linac is reported. The pulsing system generates an intense pulsed positron beam of variable energy and variable pulse period. The pulsed positron beam is used as a non-destructive probe for various material research. In this paper, we also discuss applications of the pulsed positron beam: positron lifetime spectroscopy, age-momentum correlation spectroscopy, positronium time-of-flight measurement, and positron annihilation-induced Auger electron spectroscopy with a time-of-flight technique.     

Development and application of the intense slow positron beam at IHEP

This paper describes the development and application of an intense slow positron beam at IHEP with regard to its two main components.The Variable-Energy Positron Lifetime Spectroscopy (VEPLS) based on the pulsing system consisting of a chopper,a prebuncher and a buncher has been constructed in order to meet the needs of materials science development.At present,the time resolution of the VEPLS can easily reach about 386 ps with a peak-to-background ratio of about 600:1.A plugged-in 22Na positron source section for adjusting the newly built experimental station and for increasing the beam operation efficiency has been constructed.A slow positron beam with an intensity of 2.5x105 e+/s and the beam profile whose diameter is 10 mm has been obtained;the moderation efficiency of the tungsten mesh moderator reaches 5.1x 10-4 as calculated with an original positron source activity of 52 mCi.     

Construction of a positron microbeam in JAEA

We have developed a positron microbeam using magnetic lenses based on the commercial scanning electron microscope (SEM). A slow positron beam was generated using a handmade source with ²²Na and a solid neon moderator. The beam diameter was 3.9 μm on a target. Two-dimensional image of S parameter was successfully obtained. By introducing a beam pulsing section, positron lifetime measurement beam is also available.     

正电子迁移率的测量

综述了半导体在金刚石中的正电子迁移率的６种不同测量方法（角关联方法，多普勒方法，寿命谱方法，注入剖面法，扩散常数法和慢正电子法），给出了自１９５７年以来国内外的所有测量数据，并对数据进行了综合分析。     

Design of a new type positron beam system

A new type positron beam system is being constructed in Wuhan university. The goal of this project is to build a positron beam which can measure positron lifetimes and has high moderation efficiency. The system utilizes a magnetically guided incident positron beam and the sample is biased to a high negative potential to achieve the desired implantation energies. A conventional tungsten moderator is replaced by a solid Ne moderator with high moderation efficiency (about 1%). A multi-functional target chamber for slow beam studies is designed, which can be used for positron annihilation lifetime spectroscopy (PALS), Doppler broadening (DB) and coincidence Doppler broadening (CDB) measurements.     

The exact solution of the diffusion trapping model of defect profiling with variable energy positrons

We report an exact analytical solution of so-called positron diffusion trapping model. This model have been widely used for the treatment of the experimental data for defect profiling of the adjoin surface layer using the variable energy positron (VEP) beam technique. However, up to now this model could be treated only numerically with so-called VEPFIT program. The explicit form of the solutions is obtained for the realistic cases when defect profile is described by a discreet step-like function and continuous exponential-like function. Our solutions allow to derive the analytical expressions for typical positron annihilation characteristics including the positron lifetime spectrum. Latter quantity could be measured using the pulsed, slow positron beam. Our analytical results are in good coincidence with both the VEPFIT numerics and experimental data. The presented solutions are easily generalizable for defect profiles of other shapes and can be well used for much more precise treatment of above experimental data.     

Lifetime measurements with a scanning positron microscope

First lifetime results obtained with a scanning positron microscope will be presented. A pulsed positron beam with a variable energy from 0.5 to 20 keV, with a spot diameter of 2 microm, can be electronically scanned over an area of 0.6x0.6 mm(2). This beam is formed after a double-stage stochastic cooling (moderation) of positrons emitted from a radioactive isotope. Included in the system is a conventional scanning electron microprobe for surface analysis. Three-dimensional positron lifetime spectra of a GaAs sample with a small surface scratch reveal the range due to the mechanical damage.     

Experimental aspects of the study of the interaction of low-energy positrons with gases

The development of the techniques of producing slow positron beams is traced from the original experiments. The applications of such beams to the measurement of cross-sections for positrons interacting in various gases and for the production of positronium in vacuum is discussed in detail. The recent developments in the theory of positron interactions in gses are outlined and the results are compared with the experimental observations. Recent developments in lifetime studies are also presented along with the data for several gases where a number of new effects have been observed, especially at high gas densities. The discrepancy which has recently arisen concerning the vacuum lifetime of ortho-positronium, is also discussed.     

POSITRON ANNIHILATION WITH VACANCIES IN THIN SURFACE LAYER OF As HEAVILY DOPED Si

The lifetime spectroscopy of slow positron accelerated with linear accelerator and pulse punch system was first used to analyze the vacancies in the thin surface layer of silicon heavily doped with arsenic. The results demonstrated that no mono-vacancy was detected to support the arsenic-vacancy complex models for explaining the electrical deactivation mechanism of arsenic-heavily-doped silicon.