超越曲面电极结构电光偏转器研究

采用有限元法对几种不同电极结构下电光偏转器的电场分布进行研究.设计出一种具有较大偏转角度的超越曲面电极结构电光偏转器，与圆柱电极结构和双曲面电极结构电光偏转器的性能对比，可知此种电光偏转器的偏转角度更大，电场梯度线性度更高.     

新型KTP电光偏转器的设计和分析

设计了新ＫＴＰ电光偏转器，当通光口径Ｄ＝４ｍｍ，长度Ｌ＝４０ｍｍ时，其时间分辨率为１８０ｐｓ，从而可获得最窄宽度为４００ｐｓ的整形激光脉冲，而相同结构的ＬｉＮｂＯ３电光偏转器最窄只可获得宽度为８３０ｐｓ的整形激光脉冲，分析了电光偏转器设计中影响其性能指标的因素，指出利用恒温炉装置可消除激光脉冲在传播过程中的波面畸变。     

反常声电光偏转器

本文介绍的新型声光偏转器可提高传统光偏转器的带宽，制作了一个ＬＮ反常声电光偏转器，中心频率为６０ＭＨｚ测试结果表明，带宽由原来的２６ＭＨｚ提高到３７ＭＨｚ。     

一种8行任意扫描的电光扫瞄器

 针对激光的快速智能扫描,综合利用晶体的双折射效应和电光效应,提出一种电控集成8行任意扫瞄的高速光扫描方案。主要由三级数字电光偏转器和8×1的周期性极化电光棱镜组构成,其中3个电光快门和3块双折射晶体构成三级数字偏转器,通过半波电压的控制实现行位置的转换,一定数目的周期性极化电光棱镜级联组成单行偏转器,通过控制电压进行单行扫描,根据电场施加方式可实现数字型或者连续型扫描。利用梯形结构的电光棱镜组设计了最大电压为5.822 kV时,扫描视场为17.256°的可通过联机控制进行任意行扫描的高速激光扫描器。     

畴反转结构片状集成4×4电光开关的设计与仿真

基于铁电体畴反转结构的电光偏转特性,设计了一种片状集成的4×4电光开关,其由四个结构相同的半抛物和四个抛物形微小偏转器集成构成.通过优化抛物形偏转器结构,给出了电光开关的设计参量,电光开关性能通过光束传播法进行仿真模拟,仿真结果表明该开关切实可行.实际应用中,系统误差可以通过电场调节补偿,使光路准确交换.该片状电光开关的整体尺寸为48 mm×2.2mm×0.5 mm(长×宽×高),最大使用电场约13.73 V/μm,适用于高速交换的光互连系统.     

畴反转结构片状集成4×4电光开关的设计与仿真

基于铁电体畴反转结构的电光偏转特性,设计了一种片状集成的4×4电光开关,其由四个结构相同的半抛物和四个抛物形微小偏转器集成构成.通过优化抛物形偏转器结构,给出了电光开关的设计参量,电光开关性能通过光束传播法进行仿真模拟,仿真结果表明该开关切实可行.实际应用中,系统误差可以通过电场调节补偿,使光路准确交换.该片状电光开关的整体尺寸为48 mm×2.2 mm×0.5 mm(长×宽×高),最大使用电场约13.73 V/μm,适用于高速交换的光互连系统.     

实时声光图像相关器及其在模试识别中的应用

介绍一种实时声光图像相关器。在该系统中，一个声光偏转器和一个激光二极管阵列分别被用作输人图像和滤波器的电光转换器件。二维相关由工作于时间延迟积分模式下的一个二维ＣＣＤ探测器完成。最后描述这种相关器在模式识别中的应用。     

国外激光扫描大屏幕显示进展(1964——1973)

本文仅对激光扫描形式的大屏幕显示作一概括报导,包括从1964年到1973年间的单色、彩色和立体的激光显示的主要进展情况,对其中机械扫描、电光扫描和声光扫描的激光显示实例给以简单介绍,并讨论了显示器的三个组成部分:光源、偏转器和屏结构。     

钽铌酸钾晶体的电控偏转色散特性

钽铌酸钾(KTN)晶体具有很高的二次电光系数,响应速度快,因此可以作为高速电光开关的材料,能在较低电压下快速产生大的光束偏转角。但是KTN晶体的色散问题制约了其作为电光开关在宽光谱范围内的应用。探讨了外加电压、温度及波长对偏转特性的影响,发现同时调节电压和温度的方法可以平衡光束偏转角和色散,为KTN晶体用于宽波段光束偏转提供参考。     

转镜原理和转镜相机的发展

在高速摄影中,作为传递信息的光子(或者电子)必须随着时间变换其空间位置(相对记录介质而言)。如果仅仅讨论记录介质静止的情况,那就必须对光速进行偏转。偏转的方法有转镜偏转,声光偏转和电光偏转等。     

SFC引出静电偏转板高压放电的研究

根据SFC引出静电偏转板的特殊工作环境和运行中发生的现象， 对其高压放电机理进行了深入的研究和大量的电磁场计算。 计算结果表明， 在电场和磁场的共同作用下， 盖板损伤的发生部位与实际运行中的打火痕迹完全符合。 最后阐述了SFC引出偏转板的高压放电过程， 并对其改进措施进行了研究。Due to the special working conditions of the SFC extraction deflector, the breakdown of the deflector is a serious problem. Based on the electromagnetic field calculations and the analysis of electrons and ions in the field, the breakdown mechanism was investigated. The calculated results about the electron hitting spots on the liners are consistent with the observed ones in the operation. At last, an improvement method of the deflector is suggested by using aluminum cathode and combined liners     

Broad band acousto-optic deflector for holographic memories

A practical inexpensive mechanism for effecting improved Rayleigh resolution in a random access deflector without sacrificing its performance has been constructed. It comprises an acousto-optic deflector in the form of a flat transducer grating, made from a single piezoelectric platelet. The deflector steers the acoustic column to track the Bragg angle as the acoustic frequency changes.     

托卡马克真空室内线圈水冷管道接头强化二次流的数值研究

基于计算流体力学(CFD)理论，研究了不同曲率半径的螺旋导流片的托卡马克真空室内线圈水冷管道接头。利用湍流数值模拟方法，分析了线圈管道接头导流片曲率半径比、冷却水入口流速对线圈管道内流体平均雷诺数分布的影响。结果表明，不同导流片曲率半径比的线圈管道内的流体雷诺数分布曲线相似，平均雷诺数随入口流速的增加而增大，管道接头出口雷诺数随导流片曲率半径比的增大而减小，导流片曲率半径比小的管接头更适用于线圈水冷曲线管的二次流强化。此外，还为导流片曲率半径比为0.2的管接头拟合了管接头出口雷诺数与入口流速的关系式，为进一步研究类似于托卡马克真空室内线圈管道的曲线管接头的二次流强化提供理论基础。     

Acousto-Optic Deflector with a High Diffraction Efficiency and Wide Angular Scanning Range

A new acousto-optic deflector with a wide angular scanning range and a high diffraction efficiency has been studied. The device uses an additional deflector, which allows the angle of incidence of the input beam to be adjusted in order to fulfill the Bragg phase–matching condition over the entire scanning range of the main deflector. The characteristics of an anisotropic two-crystal deflector based on paratellurite crystals have been measured. It has been established experimentally that the operating bandwidth of the device is 32 MHz for a diffraction coefficient no less than 90%, which determines a light beam scanning angle of 50 mrad.     

Bunch length measurement using a traveling wave RF deflector

RF deflectors can be used for bunch length measurement with high resolution. This paper describes a completed S-band traveling wave RF deflector and the bunch length measurement of the electron beam produced by the photocathode RF gun of the Shanghai DUV-FEL facility. This is the first time that such a transverse RF deflector has been developed and used to measure the bunch length of picosecond order in China. The deflector's VSWR is 1.06, the whole attenuation 0.5 dB, and the bandwidth 4.77 MHz for VSWR less than 1.1. With a laser pulse width of 8.5 ps, beam energy of 4.2 MeV, and bunch charge of 0.64 nC, the bunch lengths for different RF input power into the deflector were measured, and an averaged rms bunch length of 5.25 ps was obtained. A YAG crystal is used as a screen downstream of the deflector, with the calibrated value of 1 pix = 136 μm.     

An electrostatic deflector for a fusion reaction

An electrostatic deflector for separating the fusion evaporation residues from the beam-like products in heavy ion reactions was installed.The evaporation residue separation and identification with the electrostatic deflector setup was tested with the reaction 32S+96Zr at several energies.The fusion evaporation residues and the beam-like particles were well separated after the electrical separation and the experimental fusion cross section obtained from the angular distribution is in good agreement with the calculated value well above the Coulomb barrier.This confirms the reliability of the setup.     

A travelling-wave beam deflector cleave-coupled to a diode laser

A new technique for scanning a diode laser beam is introduced where the beam is deflected in a current-injection-type travelling-wave beam deflector integrated with a diode laser. The deflector, which is formed outside the laser cavity, is cleave-coupled to the cavity. An anti-reflection coating on the deflector output facet suppresses the light returning to the laser. As a result, very smooth deflection of the radiation peak with low background intensity is realized in this device, while retaining high efficiency and low threshold current.