Entangled Bell states of two electrons in coupled quantum dots—phonon decoherence

We demonstrate coupling and entangling of quantum states in a pair of vertically aligned self assembled quantum dots by studying the dynamics of two interacting electrons driven by external electric field. The present entanglement involves the spatial degree of freedom for the two electrons system. We show that system of two interacting electrons initially delocalized (localized each in one dot) oscillate slowly in response to electric field, since the strong Coulomb repulsion makes them behaving so. We use an explicit formula for the entanglement of formation of two qubit in terms of the concurrence of the density operator. In ideal situations, entangled quantum states would not decohere during processing and transmission of quantum information. However, real quantum systems will inevitably be influenced by surrounding environments. We discuss the degree of entanglement of this system in which we introduce the decoherence effect caused by the acoustic phonon. In this entangled states proposal, the decohering time depends on the external parameters.     

Electronic structure of three-dimensional quantum dots

We study the electronic structure of three-dimensional quantum dots using the Hartree-Fock approximation. The confining potential of the electrons in the quantum dot is assumed to be spatially isotropic and harmonic. For up to 40 interacting electrons the ground-state energies and ground-state wavefunctions are calculated at various interaction strengths. The quadrupole moments and electron densities in the quantum dot are computed. Hund's rule is confirmed and a shell structure is identified via the addition energies and the quadrupole moments. While most of the shell structure can be understood on the basis of the unperturbed non-interacting problem, the interplay of an avoided crossing and the Coulomb interaction results in an unexpected closed shell for 19 electrons. Received 5 November 2001 / Received in final form 12 November 2002 Published online 1st April 2003 RID="a" ID="a"e-mail: vorrath@physnet.uni-hamburg.de     

The quantum acoustomagnetoelectric field in a quantum well with a parabolic potential

The acoustomagnetoelectric (AME) field in a quantum well with a parabolic potential (QWPP) has been studied in the presence of an external magnetic field. The analytic expression for the AME field in the QWPP is obtained by using the quantum kinetic equation for the distribution function of electrons interacting with external phonons. The dependence of the AME field on the temperature T of the system, the wavenumber q of the acoustic wave and external magnetic field B for the specific AlAs/GaAs/AlAs is achieved by using a numerical method. The problem is considered for both cases: The weak magnetic field region and the quantized magnetic field region. The results are compared with those for normal bulk semiconductor and superlattices to show the differences, and we use the quantum theory to calculate the AME field in the QWPP.     

Transport properties of quantum dots

Linear and nonlinear transport through a quantum dot that is weakly coupled to ideal quantum leads is investigated in the parameter regime where charging and geometrical quantization effects coexist. The exact eigenstates and spins of a finite number of correlated electrons confined within the dot are combined with a rate equation. The current is calculated in the regime of sequential tunneling. The analytic solution for an Anderson impurity is given. The phenomenological charging model is compared with the quantum mechanical model for interacting electrons. The current-voltage characteristics show Coulomb blockade. The excited states lead to additional fine-structure in the current voltage characteristics. Asymmetry in the coupling between the quantum dot and the leads causes asymmetry in the conductance peaks which is reversed with the bias voltage. The spin selection rules can cause a ‘spin blockade’ which decreases the current when certain excited states become involved in the transport. In two-dimensional dots, peaks in the linear conductance can be suppressed at low temperatures, when the total spins of the corresponding ground states differ by more than 1/2. In a magnetic field, an electron number parity effect due to the different spins of the many-electron ground states is predicted in addition to the vanishing of the spin blockade effect. All of the predicted features are consistent with recent experiments.     

Dynamic localization of two electrons in AC-driven triple quantum dots and quantum dot shuttles

We analyze the dynamic localization of two interacting electrons induced by alternating current electric fields in triple quantum dots and triple quantum dot shuttles. The calculation of the long-time averaged occupation probability shows that both the intra-and inter-dot Coulomb interaction can increase the localization of electrons even when the AC field is not very large. The mechanical oscillation of the quantum dot shuttles may keep the localization of electrons at a high level within a range if its frequency is quite a bit smaller than the AC field. However, the localization may be depressed if the frequency of the mechanical oscillation is the integer times of the frequency of the AC field. We also derive the analytical condition of two-electron localization both for triple quantum dots and quantum dot shuttles within the Floquet formalism.     

Magneto-optics of zero-dimensional electron systems

Photoluminescence spectroscopy has been used to probe the occupied electron states below the Fermi energy of zero-dimensional electron systems (0DESs) in both zero and finite magnetic fields. The arrays of modulation-doped quantum dots investigated were fabricated by both reactive-ion etching and strain-confining GaAs heterojunctions with a -layer of Be present in the GaAs, in order to improve luminescence efficiency. For the etched quantum dots we show that the low magnetic field dispersion T) of the acceptor recombination line is directly related to the magnetic field dependence of the total ground-state energy of interacting electrons in the quantum dots. For the strain-confined 0DESs we have mapped the magneto-dispersion of the quantum confined electron states to reveal 15 electrons per dot.     

Magnetic properties of quantum dots and rings

Exact many-body methods as well as current-spin-density functional theory are used to study the magnetism and electron localization in two-dimensional quantum dots and quasi-one-dimensional quantum rings. Predictions of broken-symmetry solutions within the density functional model are confirmed by exact configuration interaction (CI) calculations: In a quantum ring the electrons localize to form an antiferromagnetic chain which can be described with a simple model Hamiltonian. In a quantum dot the magnetic field localizes the electrons as predicted with the density functional approach. Received 5 December 2000     

Induced quantum dots and wires: electron storage and delivery

We show that quantum dots and quantum wires are formed underneath metal electrodes deposited on a planar semiconductor heterostructure containing a quantum well. The confinement is due to the self-focusing mechanism of an electron wave packet interacting with the charge induced on the metal surface. Induced quantum wires guide the transfer of electrons along metal paths and induced quantum dots store the electrons in specific locations of the nanostructure. Induced dots and wires can be useful for devices operating on the electron spin. An application for a spin readout device is proposed.     

Electronic states of quantum dots: beyond the 2D parabolic model

The quantum states of interacting electrons in a quantum dot in a magnetic field are calculated and the effects of corrections to the 2D parabolic model are examined. The quantum states are obtained by a new method which involves three steps: first the electrostatic potential of the device is obtained from a solution of the Poisson equation, next this potential is used together with a combination of variational and Hartree–Fock calculations to obtain an orthogonal basis whose low-lying states are localised in the region of the dot and finally this basis is used to perform an exact diagonalization. Special attention is paid to the effect of motion perpendicular to the ideal 2D plane and the effect of screening of the Coulomb interaction by metallic electrodes close to the dot. Both effects result in a weakened effective interaction and increase the magnetic fields at which ground-state transitions occur.     

Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots: observation of a permanent dipole moment

The nature of the confined electronic states in InAs/GaAs self-assembled quantum dots is studied using photocurrent spectroscopy measured as a function of applied electric field. A field asymmetry of the quantum confined Stark effect is observed, consistent with the dots possessing a permanent dipole moment. The sign of this dipole indicates that for zero field the hole wave function lies above that of the electron, in disagreement with the predictions of all recent calculations. Comparison with a theoretical model demonstrates that the experimentally determined alignment of the electron and hole can only be explained if the dots contain a non-zero and non-uniform Ga content.