Optical properties of 1.3-μm InAs/GaAs quantum dots grown by metal organic chemical vapor deposition

The optical properties of self-assembled InAs quantum dots （QDs） on GaAs substrate grown by metalorganic chemical vapor deposition （MOCVD） are reported. Photoluminescence （PL） measurements prove the good optical quality of InAs QDs, which axe achieved using lower growth temperature and higher InAs coverage. At room temperature, the ground state peak wavelength of PL spectrum and full-width at half-maximum （FWHM） are 1305 nm and 30 meV, respectively, which are obtained as the QDs are finally capped with 5-nm In0.06Ga0.94As strain-reducing layer （SRL）. The PL spectra exhibit two emission peaks at 1305 and 1198 nm, which correspond to the ground state （GS） and the excited state （ES） of the QDs, respectively.     

Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs （100） substrates by using MOCVD

Self-assembled lnAs quantum dots （QDs） are grown on vicinal GaAs （100） substrates by using metal-organic chemical vapour deposition （MOCVD）. An abnormal temperature dependence of bimodal size distribution of InAs quantum dots is found. As the temperature increases, the density of the small dots grows larger while the density of the large dots turns smaller, which is contrary to the evolution of QDs on exact GaAs （100） substrates. This trend is explained by taking into account the presence of multiatoinic steps on the substrates. The optical properties of InAs QDs on vicinal GaAs（100） substrates are also studied by photoluminescence （PL） . It is found that dots on a vicinal substrate have a longer emission wavelength, a narrower PL line width and a much larger PL intensity.     

Optimum Indium Concentration for Growth of 1.3μmInAs/InxGa1-xAs Quantum Dots in a Well

Five InAs/InxGa1-xAs quantum dots in a well （DWELL） with different indium concentration x are grown by solid source molecular beam epitaxy. The high quantum dot density is observed in the InAs/In0.3Ga0.7As DWELL. The photoluminescence （PL） experiments indicate that the ground state peaks of InAs/In0.15 Ga0.85As and InAs/In0.22 Ga0.78As DWELLs shift to 1.31 and 1.33μm, respectively. The optical properties are investigated by using the PL and piezoreflectance spectroscope methods. An abnormal blue shift has been observed with the further increase of x from 0.22 to 0.30.     

Effect of GaAs/GaSb Combination Strain-Reducing Layer on Self-Assembled InAs Quantum Dots

Self-assembled quantum dots capping with a GaAs/Gasb combined strain-reduced layer （CSRL） are grown by MBE. Their structural and optical properties are investigated by AFM and photoluminescence （PL）. PL measurements have shown that stronger emission about 1.3μm can be obtained by Sb irradiation and capping QDs with 3 ML GaAs/2 ML GaSh CSRL at room temperature. The full width at half maximum （FWHM） of the PL spectrum is about 20.2 meV （19.9 meV） at room temperature （2OK）, indicating that the QDs have high uniform, The result of FWHM is much better than the recently reported result, which is due to the fact that lower QD growth rate and growth interruption after the QDs deposition are adopted in our experiments.     

Ordered InAs Quantum Dots with Controllable Periods Grown on Stripe-Patterned GaAs Substrates

GaAs （001） substrates are patterned by electron beam lithography and wet chemical etching to control the nucleation of lnAs quantum dots （QDs）. InAs dots are grown on the stripe-patterned substrates by solid source molecular beam epitaxy. A thick buffer layer is deposited on the strip pattern before the deposition of InAs. To enhance the surface diffusion length of the In atoms, InAs is deposited with low growth rate and low As pressure. The AFM images show that distinct one-dimensionally ordered InAs QDs with homogeneous size distribution are created, and the QDs preferentiMly nucleate along the trench. With the increasing amount of deposited InAs and the spacing of the trenches, a number of QDs are formed beside the trenches. The distribution of additional QDs is long-range ordered, always along the trenchs rather than across the spacing regions.     

GaAs-Based Metamorphic Long-Wavelength InAs Quantum Dots Grown by Molecular Beam Epitaxy

A bilayer stacked InAs/GaAs quantum dot structure grown by molecular beam epitaxy on an In0.05Ga0.95As metamorphic buffer is investigated. By introducing a InGaAs：Sb cover layer on the upper InAs quantum dots （QDs） layers, the emission wavelength of the QDs is extended successfully to 1.533 μm at room temperature, and the density of the QDs is in the range of 4× 10^9-8 ×10^9cm^-2. Strong photoluminescence （PL） intensity with a full width at half maximum of 28.6meV of the PL spectrum shows good optical quality of the bilayer QDs. The growth of bilayer QDs on metamorphic buffers offers a useful way to extend the wavelengths of GaAs-based materials for potential applications in optoeleetronic and quantum functional devices.     

Polarization Properties of Quantum-Dot-Based Single Photon Sources

Polarization properties of single photons emitted by optical pumping from a single quantum dot （ QD） are studied by using a four-level system model. The model is capable of explaining the polarization uncertainty observed in single photon emission experiments. It is found that the dependence of photon emission efficiency and polarization visibility on pump power are opposite in general cases. By employing QDs with small size and strong carrier confinement, the photon polarization visibility under high pump power can be improved. In addition, embedding a QD into a well designed microcavity is also found to be favourable, whereas the trade-off between high polarization visibility and multi-photon emission is noted.     

Temperature Dependence of Emission Properties of Self-Assembled InGaN Quantum Dots

Emission properties of self-assembled green-emitting InGaN quantum dots （QDs） grown on sapphire substrates by using metal organic chemical vapor deposition are studied by temperature-dependent photoluminescence （PL） measurements. As temperature increases （15-300K）, the PL peak energy shows an anomalous V-shaped （redshift blueshift） variation instead of an S-shaped （redshift-blueshift-redshift） variation, as observed typically in green-emitting InGaN/GaN multi-quantum wells （MOWs）. The PL full width at half maximum （FWHM） also shows a V-shaped （decrease-increase） variation. The temperature dependence of the PL peak energy and FWHM of QDs are well explained by a model similar to MOWs, in which carriers transferring in localized states play an important role, while the confinement energy of localized states in the QDs is significantly larger than that in MOWs. By analyzing the integrated PL intensity, the larger confinement energy of localized states in the QDs is estimated to be 105.9meV, which is well explained by taking into account the band-gap shrinkage and carrier thermalization with temperature. It is also found that the nonradiative combination centers in QD samples are much less than those in QW samples with the same In content.     

Surface plasmon enhanced photoluminescence in amorphous silicon carbide films by adjusting Ag island film sizes

Ag island films with different sizes are deposited on hydrogenated amorphous silicon carbide (α-SiC:H) films, and the influences of Ag island films on the optical properties of the α-SiC:H films are investigated. Atomic force microscope images show that Ag nanoislands are formed after Ag coating, and the size of the Ag islands increases with increasing Ag deposition time. The extinction spectra indicate that two resonance absorption peaks which correspond to out-of-plane and in-plane surface plasmon modes of the Ag island films are obtained, and the resonance peak shifts toward longer wavelength with increasing Ag island size. The photoluminescence (PL) enhancement or quenching depends on the size of Ag islands, and PL enhancement by 1.6 times on the main PL band is obtained when the sputtering time is 10 min. Analyses show that the influence of surface plasmons on the PL of α-SiC:H is determined by the competition between the scattering and absorption of Ag islands, and PL enhancement is obtained when scattering is the main interaction between the Ag islands and incident light.     

Broadening of Photoluminescence by Nonhomogeneous Size Distribution of Self-Assembled InAs Quantum Dots

The photoluminescence spectrum （PL） of InAs quantum dots （QDs） at 80 K is studied by comparison between the theoretical calculation and experimental measurement. The Gaussian line shape is used to approximate the size distribution of QDs. Its mean volume and the standard full width at half maximum （FWHM） of the PL spectrum. size deviation are well correlated with the peak and The experimental PL spectrum is well reproduced by the theoretical model based on the effect mass approximation including the size distribution without any adjustable parameters. Compared with the standard size deviation value σ = 9 × 10^-2 determined by atomic force microscopic method a small value σ = 7 × 10^-2 is obtained by the best fitting process from the measured and calculated PL spectra.     

Characterisation of the reduction properties of La0.5Sr0.5Fe0.5Co0.5O3

We report here on the characterisation by temperature programmed reduction, ⁵⁷Fe Mössbauer spectroscopy and X-ray absorption spectroscopy of the phases resulting from treatment of the perovskite-related material La_0.5Sr_0.5Fe_0.5Co_0.5O₃ in a flowing 90% hydrogen/10% nitrogen atmosphere. The results show that treatment of La_0.5Sr_0.5Fe_0.5Co_0.5O₃ (which contains approximately 50% Fe⁴⁺ and 50% Fe³⁺) in the flowing 90% hydrogen/10% nitrogen atmosphere at 600°C does not result in the reduction of any of the constituent elements of the material and that the perovskite structure is still retained. The Mössbauer spectrum recorded following heating in the gaseous reducing environment at 1,000°C shows the presence of metallic iron, an Fe³⁺-containing phase with parameters compatible with the presence of SrLaFeO₄ which has a K₂NiF₄-type structure, and a paramagnetic Fe³⁺ phase. The X-ray absorption spectroscopy results show the presence of metallic cobalt. The Mössbauer spectrum recorded following heating at 1,200°C continues to show the Fe³⁺-containing components plus a larger contribution from metallic iron. The X-ray absorption spectroscopy results show the presence of metallic cobalt, SrLaFeO₄, La₂O₃ and SrO.     

Crystal structure and the magnetic state of Pr0.5Sr0.5Co0.5Fe0.5O3

The magnetic properties and crystal structure of the Pr_0.5Sr_0.5Co_0.5Fe_0.5O₃ compound are studied by neutron and x-ray diffractions using synchrotron radiation. These measurements show that this compound is a dielectric spin glass with a magnetic moment freezing temperature of about 70 K. As temperature decreases in the range 30–95 K, a structure phase transition of the first order occurs with an increase in the symmetry from orthorhombic (space group Imma) to tetragonal (space group I4/mcm). It is assumed that the transition is caused by a change in the 4f electron configuration of the Pr³⁺ ions.     

Ab initio study of Os0.5W0.5B2, Re0.5W0.5B2, and Os0.5Re0.5B2 with high shear modulus

By using first‐principles calculations, the authors investigate the structural, mechanical, and electronic properties of experimentally synthesized Os_0.5W_0.5B₂. The calculated structural parameters and elastic properties are in good agreement with the experimental results. In addition, two new 5d transition‐metal diborides (Re_0.5W_0.5B₂ and Os_0.5Re_0.5B₂) are predicted to have promising large shear moduli. The latter mainly come from the non‐uniform distribution of valence charge density, which raises the value of the shear moduli. We discuss potentially high hardness in these materials. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

High-temperature impedance spectroscopy of BaFe0.5Nb0.5O3 ceramics doped with Bi0.5Na0.5TiO3

Bi_0.5Na_0.5TiO₃ (BNT)-doped BaFe_0.5Nb_0.5O₃ (BFN) ceramics were synthesized by a two-step solid-state reaction. Temperature dependence of dielectric properties measured at different frequencies was investigated over broad temperature and frequency ranges. Impedance spectroscopy and universal dielectric response were employed to study the relaxation behavior and conductivity mechanism of the ceramics in a frequency range from 40 Hz to 100 MHz and a temperature range from 300 K to 800 K. The complex plane impedance data revealed the bulk and grain boundary contributions toward conductivity processes in the form of semicircular arcs. The high-temperature conductivity of ceramics is attributable to thermally activated second ionized oxygen vacancy.     

Intrinsic pinning properties of FeSe0.5Te0.5

The intrinsic pinning properties of FeSe_0.5Te_0.5, which is a superconductor with a critical temperature T_c of approximately 14 K, were studied through the analysis of magnetization curves obtained using an extended critical state model. For the magnetization measurements carried out with a superconducting quantum interference device (SQUID), external magnetic fields were applied parallel and perpendicular to the c-axis of the sample. The critical current density J_c under the perpendicular magnetic field of 1 T was estimated using the Kimishima model to be equal to approximately 1.6 × 10⁴, 8.8 × 10³, 4.1 × 10³, and 1.5 × 10³ A/cm² at 5, 7, 9, and 11 K, respectively. Furthermore, the temperature dependence of J_c was fitted to the exponential law of J_c(0) × exp(?αT/T_c) up to 9 K and the power law of J_c(0) × (1 ? T/T_c)ⁿ near T_c.     

0.5BiFeO3–0.5PbFe0.5Nb0.5O3 Multiferroic Ceramic: Structure,Dielectric and Magnetodielectric Properties

Physics of the Solid State - The structure, dielectric characteristics, and magnetoelectric effect of a 0.5BiFeO3–0.5PbFe0.5Nb0.5O3 multiferroic ceramics are studied. We found that the...     

Ordering of polarons in Pr0.5Ca0.5MnO3

We report detailed dielectric investigations of Pr_1?xCa_xMnO₃ (PCMO, x=0.5) ceramics, a member of the perovskite manganite family that exhibits a colossal magnetoresistance. Analysis of the electrical conductivity and dielectric constant data revealed that in the low temperature phase, below 42 K, small polarons are responsible for the charge transport in the system. This provides a new understanding of the phase diagrams in PCMO systems     

Anisotropic superconducting properties of FeSe0.5Te0.5 single crystals

We investigated the anisotropic electrical transport and magnetic properties of FeSe$_{0.5}$Te$_{0.5}$ single crystals grown by the self-flux method. The in-plane resistivity shows a metallic-like temperature dependence, while the out-of-plane resistivity shows a broad hump with a maximum at around 64 K. The magnetization loops for $H/\!/c$-axis and $H/\!/ab$-plane are also different, for example, there is a typical second peak for $H/\!/c$-axis. The in-plane critical current density is larger than the out-of-plane one. The coherence length and penetration depth were estimated by the Ginzburg-Landau theory. The anisotropic parameter $\gamma $ depends on the applied magnetic field and the temperature. The coupling of superconducting FeSe(Te) layers and the flux pinning mechanism relevant to anisotropy are also discussed.     

LiNi_(0.5)Mn_(0.5)O_2制备及表征

采用共沉淀法制备了LiNi0.5Mn0.5O2.XRD,Raman测试都表明材料是六方结构.XPS检测得出镍主要以正二价存在,锰元素主要以正四价存在.合成的LiNi0.5Mn0.5O2得到了50次的循环,但比容量较低.充放电循环性能比较研究表明,经过40次循环后,0.3,0.6,1.5 C的放电比容量分别是65.88,61.56,52.23 mA.h.g-1.