Energy-exchange processes by tunneling electrons

Resistive heating, emission heating or cooling (e.g., the Nottingham effect), and thermal fluctuation radiation are examples of energy exchange processes which are fundamental in electron field emission and in tunneling junctions of scanning tunneling microscopy. These exchange processes are analyzed for both electronic tunneling processes. We first discuss the energy delivered by a monoatomic tip in the field emission process. Strong phonon excitation is expected for field emission currents exceeding 1 nA. Secondly we present a theoretical calculation of the thermal deposition associated with the Nottingham effect in a tunneling junction. The calculation is based on the free electron model for the electrode materials and the tunneling process across a planar vacuum gap. Our results show that the thermal power is deposited not only at the electron receiving electrode but also at the emitting electrode. This originates from a finite probability for electrons below the Fermi level to tunnel through the tunneling barrier replaced by electrons starting from the Fermi level. The comparison between the calculations and the recent STM measurements is given. Finally we discuss the other energy exchange processes in the tunneling junction, and conclude that the thermal coupling between the tip and the sample of STM is extremely small under UHV conditions. This is important for high temperature STM.     

Atomically resolved spin-dependent tunneling on the oxygen-terminated Fe3O4(111)

We employ spin-polarized STM to study the spin-dependent tunneling between a magnetite (111) sample and an antiferromagnetic tip through a vacuum barrier at room temperature. Atomic scale STM images show significant magnetic contrast corresponding to variations in the local surface states induced by oxygen vacancies. The estimated variations in tunneling magnetoresistance of 250% suggest that the spin-transport properties are significantly altered locally by the presence of surface defects.     

Preparing and regulating a bi-stable molecular switch by atomic manipulation

We present a scanning tunneling microscopy (STM) investigation into the influence of the STM tip on the adsorption site switching of polychlorinatedbiphenyl (PCB) molecules on the Si(111)-7?×?7 surface at room temperature. From an initially stable adsorption configuration, atomic manipulation by charge injection from the STM tip prepared a new bi-stable configuration that switched between two bonding arrangements. No switching rate bias dependence was found for +?1.0 to +?2.2?V. Assuming a thermally driven switching process we find that the measured energy barriers to switching are influenced by the exact location of the STM tip by more than 10%. We propose that this energy difference is due the dispersion interaction between the tip and the molecule.     

Scanning tunneling microscopy with spin-polarized electrons

We present a short outline of the first STM experiments with spin-polarized electrons performed in ultrahigh vacuum by using ferromagnetic CrO₂ tips and a Cr(001) single crystal surface. A clear distinction can be made between topographic STM line scans obtained with a non-magnetic tungsten tip and those obtained with a ferromagnetic CrO₂ tip, which are modified due to an additional contribution from spin-dependent vacuum tunneling. STM therefore has the potential to measure the local electron spin polarization of the free surface as well as the spatial distribution of spins on the atomic scale.     

Image charge effect on the light emission of rutile TiO_2(110) induced by a scanning tunneling microscope

The plasmon-enhanced light emission of rutile TiO_2(110) surface has been investigated by a low-temperature scanning tunneling microscope(STM). We found that the photon emission arises from the inelastic electron tunneling between the STM tip and the conduction band or defect states of TiO_2(110). In contrast to the Au(111) surface, the maximum photon energy as a function of the bias voltage clearly deviates from the linear scaling behavior, suggesting the non-negligible effect of the STM tip on the band structure of TiO_2. By performing differential conductance( dI/dV) measurements, it was revealed that such a deviation is not related to the tip-induced band bending, but is attributed to the image charge effect of the metal tip, which significantly shifts the band edges of the TiO_2(110) towards the Femi level(E_F) during the tunneling process. This work not only sheds new lights onto the understanding of plasmon-enhanced light emission of semiconductor surfaces, but also opens up a new avenue for engineering the plasmon-mediated interfacial charge transfer in molecular and semiconducting materials.     

Interfacial thermal resistance in multilayer graphene structures

The cross-plane thermal conductivities of multilayer graphene are investigated using nonequilibrium molecular dynamics simulation. It is found that the interfacial thermal resistance in multilayer graphene structures is strongly layer number dependent. It decreases with increasing layer number and reaches a limit as layer number is large enough. The interfacial thermal resistance for graphite and multilayer graphene has an anomalous relationship with temperature compared with that in superlattice structures. It increases with the temperatures above room temperature, which is attributed to phonon tunneling effects. Phonon tunneling probability is reduced due to the decreased phonon wavelength while temperature rises, which in turn causes the increased interfacial thermal resistance.     

Direct observation of the quantum tunneling of single hydrogen atoms with a scanning tunneling microscope

Single hydrogen atoms were imaged on the Cu(001) surface by scanning tunneling microscopy (STM). The vibrations of individual H and D atoms against the surface were excited and detected by inelastic electron tunneling spectroscopy (STM-IETS). Variable temperature measurements of H atom diffusion showed a transition from thermally activated diffusion to quantum tunneling at 60 K. Regimes of phonon-assisted and electron-limited quantum tunneling were observed. The thermal diffusion rate of D atoms varied over 7 orders of magnitude between 80 and 50 K with no transition to quantum tunneling down to a thermal hopping rate of 4x10(-7) s(-1).     

Structural change of radiation defects in graphite crystals induced by STM probing

It was found that STM (scanning tunneling microscopy) images of defects in highly oriented pyrolytic graphite introduced by bombardment of 400 eV Ar⁺ ions in ultra-high vacuum exhibit substantial changes in the course of STM probing. Detailed examination of abrupt changes in the tunneling current measured at defect sites during voltage scans shows that the primary cause of the defect-image change was found to be neither the injected current nor the injected power but the absolute value of the voltage applied between the probe tip and the sample. We propose that an electric polarization induced force attracting the sample surface toward the probe tip widens the layer spacing of the graphite surface, leading to an acceleration of the lateral diffusion of interstitial atoms introduced by the ion irradiation, which results in a change in the defect structures and the accompanying electronic structures sensible in the STMimaging. Received: 14 June 2001 / Accepted: 7 September 2001 / Published online: 20 December 2001     

Mapping the first electronic resonances of a Cu phthalocyanine STM tunnel junction

Using a low temperature, ultrahigh vacuum scanning tunneling microscope (STM), dI/dV differential conductance maps were recorded at the tunneling resonance energies for a single Cu phthalocyanine molecule adsorbed on an Au(111) surface. We demonstrated that, contrary to the common assumption, such maps are not representative of the molecular orbital spatial expansion, but rather result from their complex superposition captured by the STM tip apex with a superposition weight which generally does not correspond to the native weight used in the standard Slater determinant basis set. Changes in the molecule conformation on the Au(111) surface further obscure the identification between dI/dV conductance maps and the native molecular orbital electronic probability distribution in space.     

石墨上纳米尺度金岛的形成

用扫描隧道显微镜研究了真空蒸镀在高定向热解石墨上金岛的形成和形状．随着蒸镀量的增加及时间的推移，金原子在表面通过扩散而逐渐合并成越来越大的原子团，以至岛，甚至岛群．虽然几个纳米大小的原子团仍十分可动，但在蒸镀量大于20单层时的岛或岛群已十分稳定．研究发现，同一蒸镀量下，各个金岛具有非常接近的宽度和高度，用薄膜成核的圆柱状模型计算岛的宽度与高度之比表明，金岛非常接近热力学平衡状态．这些形状各异的通过生长而自组装形成的纳米尺度金岛可用来进行介观物理的研究 关键词：     

Nonlocal dissociative chemistry of adsorbed molecules induced by localized electron injection into metal surfaces

We present a novel approach to surface chemistry studies using scanning tunneling microscopy (STM), where dissociation of molecules adsorbed on metal surfaces is induced nonlocally in a 10-100 nm radius around the STM tip by hot electrons that originate from the STM tip and transport on the surface. Nonlocal molecular excitation eliminates the influence of the STM tip on the outcome of the electron-induced chemical reaction. The spatial attenuation of the nonlocal reaction is used as a direct measure of hot-electron transport on the surface.     

Time-resolved current response of a nanosecond laser pulse illuminated STM tip

Time-resolved dependence of the transient current through a ns laser pulse illuminated scanning tunneling microscope (STM) tip/sample gap in tunneling mode and out of tunneling range is presented. A self-designed fast STM-preamplifier (bandwidth 35 MHz) allows one to resolve the fine structure of the transient signal as well as the observation of some effects that are undetectable by using conventional low-band preamplifiers. The dependence of the threshold laser pulse intensity, which corresponds to the beginning of electron emission from tip (in non-tunneling mode), as a function of the tip/sample distance was investigated. At tip/sample distances from tunnel contact up to approximately 1 μm a linear dependence is found. This behavior is in good agreement with the theory for field enhancement in a STM tip/sample system. In tunneling mode a ns (fast component) as well as a μs (slow component) current response was found as a result of the laser pulse illumination. These data suggest the tip bending to be an important factor in clarifying the thermal/mechanical mechanism of laser-assisted surface nanomodification. Received: 4 May 1998 / Accepted: 29 January 1999 / Published online: 28 April 1999     

Distance-dependent STM-study of the W(110)/C-R(15×3) surface

The W(110)/C-R(15×3) reconstructed surface has been studied by STM at variable tip-surface separation controlled by the tunneling gap resistance. A pronounced dependence of the STM image contrast as a function of tip height has been observed which is explained by the suppression of higher Fourier components, i.e. small wavelength features, with increasing tip height and an additional spatial dependence of the decay length of the surface wavefunction. As an important implication of our study we have found that STM images of non-trivial surface structures can depend critically on the tunneling gap resistance.     

用扫描隧道显微镜操纵Cu亚表面自间隙原子

在超高真空环境下使用扫描隧道显微镜研究了吸附有双甘氨肽分子的Cu(001)表面.在一定的 偏压条件下，针尖在该表面扫描后会形成纳米尺度的Cu团簇，这些团簇可以根据意愿排列成 字母或图形.团簇的高度同偏压、隧道电流以及时间等条件有密切关系.在室温下可以稳定存 在的团簇为制造纳米器件提供了技术上的可能性.实验结果表明，形成团簇的Cu原子不是来 自Cu衬底表面或是针尖.化学吸附在Cu表面的双甘氨肽分子，受到隧道电场的作用会在Cu表 面形成张应变场，Cu亚表面自间隙原子在张应变场作用下迁移到表面是形成团簇的原因. 关键词： 扫描隧道显微镜 纳米尺度Cu团簇 自间隙原子     

Bistability of single 1,5 cyclooctadiene molecules on Si(001)

The adsorption and current-induced bistability of single 1,5 cyclooctadiene molecules on Si(001) were studied in ultrahigh vacuum by low-temperature scanning tunneling microscopy (STM). After a dosage of ≈0.05 L at room temperature followed by cooling to the measuring temperature of 7 K, we find that the cyclic alkene molecule preferably adsorbs in the bridge structure with both C=C double bonds reacting with two adjacent Si dimers via [2+2] cycloaddition reaction. The time-dependent current measured upon tunneling through the adsorbed molecule at fixed STM tip height displays a switching between two current levels with the same mean residence time in each level. Higher bias and/or reduced tip height—and therefore higher current—increase the switching rate, suggesting that the reversible switching is due to inelastic electron tunneling. The observed bistability is interpreted as a dynamic interconversion between two degenerate conformations of the adsorbed molecule.     

The influence of the geometry of the tip on the STM images

The theoretical studies presented in this paper concern the influence of the atomic structure of the tip on the tunneling of electrons between the tip and the sample in STM. This problem has been discussed for the system formed by Al(001) surface and aluminium tip, where different geometries of the tip were taken into consideration. The obtained results have shown how various geometries of the tip induce considerably different STM images of the surface.     

Model calculations of STM imaging and manipulation of oxygen on Pt(111)

We study tip-adsorbate–substrate interactions in scanning tunneling microscopy (STM) manipulation and imaging, and the influence of impurities on the images. Thence, we perform molecular dynamics simulations and calculate qualitative STM images for oxygen on Pt(1 1 1) surface. The adsorption site of the oxygen molecule is found to be in accordance with ab initio calculations. The calculated STM image has a good resemblance to the experimental ones. The contamination of the tip by oxygen or water alters the STM image strongly. Molecular dynamics simulations on manipulations of oxygen on the surface reveal several mechanisms of how molecular oxygen can be either produced or decomposed with STM tip. Finally, we find out that transfer of oxygen from the surface to an STM tip is not very probable.     

Optical selection rules in light emission from the scanning tunneling microscope

It is reported that optical selection rules still apply in light emission from the scanning tunneling microscope (STM). Linear polarization of isochromat light emitted from the tunneling gap between a STM tip made of tungsten (W) and a silicon (Si) sample with a (001) clean surface strongly depends on the bias voltage between tip and sample. The results show that pi* and sigma* surface states, for example, of the Si(001) sample contribute to emission of p- and s-polarized light, respectively, in accordance with optical selection rules.     

STM manipulation of a subphthalocyanine double-wheel molecule on Au(111)

A new class of double-wheel molecules is manipulated on a Au(111) surface by the tip of a scanning tunneling microscope (STM) at low temperature. The double-wheel molecule consists of two subphthalocyanine wheels connected by a central rotation carbon axis. Each of the subphthalocyanine wheels has a nitrogen tag to monitor its intramolecular rolling during an STM manipulation sequence. The position of the tag can be followed by STM, allowing us to distinguish between the different lateral movements of the molecule on the surface when manipulated by the STM tip.     

Visualization of electron orbitals in scanning tunneling microscopy

Scanning tunneling microscopy (STM) is one of the main techniques for direct visualization of the surface electronic structure and chemical analysis of multi-component surfaces at the atomic scale. This review is focused on the role of the tip orbital structure and tip-surface interaction in STM imaging with picometer spatial resolution. Fabrication of STM probes with well-defined structure and selective visualization of individual electron orbitals in the STM experiments with controlled tunneling gap and probe structure are demonstrated.