有序银纳米线阵列的表面增强拉曼光谱研究

本文通过模板法制备了一系列不同孔径的氧化铝模板 ,并通过交流电向模板中沉积银而制成有序银纳米线阵列。以SCN- 作为探针分子 ,用H3PO4溶解模板并用共焦显微拉曼系统现场检测SERS信号。结果表明 ,SERS信号的强度随露出表面纳米线的长度的增加而变大 ,到一定程度后又逐渐减弱。这说明只有具有合适长径比的纳米线才会有最大的增强     

AlN纳米线宏观阵列的制备

借助二次模板法成功的合成了AlN纳米线宏观阵列,并进行了表征.主要研究CVD法制备有一定取向,直径均匀的AlN纳米线宏观阵列的过程.通过气相沉积法和利用PS球自组装模板制备了金属纳米颗粒模板;再以模板上的金属纳米颗粒作为催化剂,利用化学气相沉积在模板上合成AlN纳米线宏观阵列.借助SEM,TEM观察所得样品,AlN纳米线阵列面积约为0.3 mm×0.2 mm,直径和长度分布均匀,平均直径约为41 nm,平均长度为1.8 μm左右,分散密度和覆盖率大的六角结构AlN纳米线宏观阵列.得到了可控制备AlN纳米线 关键词： AlN纳米线阵列 模板法 CVD法 SEM     

强辐射源用铜纳米线阵列靶的结构与性能

 采用多孔阳极氧化铝（AAO）模板脉冲电沉积法制备了强辐射源用铜纳米线阵列靶,并用扫描电子显微镜（SEM）、能谱（EDS）和X射线衍射（XRD）对其进行了结构表征。结果表明：去除AAO模板后铜纳米线平均直径比去除AAO模板前的平均孔径大32%,长度缩短5%。对电沉积2 000 s的样品进行铜纳米线长度分布表征,结果显示:距离模板圆心越远,铜纳米线越长。与超短脉冲激光相互作用实验结果表明:纳米线平均长度在18~50 μm范围内,铜Kα光子产额先随纳米线长度增加而增加,当长度大于33 μm时,铜Kα光子产额开始下降。     

磁场对模板法制备的Co纳米线结构和磁性的影响

在用二次氧化法制备的高度有序的氧化铝模板上通过交流电化学方法制备了Co纳米线阵列．研究了外加磁场及电解液pH值对纳米线生长的影响．在pH值为6.0和6.5的电解液中分别在不加磁场和沿纳米线轴向施加0.3 T磁场情况下制备了hcp结构的Co纳米线阵列．实验数据表明,沉积时外加磁场和调节pH值能有效影响纳米线中hcp结构的Co晶粒的易磁化轴沿纳米线长轴方向生长．由于晶粒的磁晶各向异性和纳米线沿长度方向的宏观形状各向异性叠加,制备的Co纳米线阵列具有高垂直各向异性,高矫顽力和较高矩形比． 关键词： Co纳米线阵列 织构 磁性     

Ni纳米线阵列的铁磁共振研究

通过改变氧化电压和酸性溶液制备了孔径、孔隙率不同的阳极氧化铝模板，用电沉积方法在模板中制备了Ni有序纳米线阵列，并用铁磁共振技术和振动样品磁强计对其进行了研究.研究表明Ni纳米线阵列存在着较强的偶极相互作用，偶极相互作用与纳米线的形状各向异性之间的竞争决定了纳米线的易磁化方向.随着纳米线阵列密度的增加，线间的偶极相互作用增加，使得纳米线易磁化方向从平行于纳米线方向渐趋向于垂直于纳米线的平面内. 关键词： 纳米线 铁磁共振 偶极相互作用 氧化铝模板     

含钴阳极氧化铝膜的磁致偏光特性

用电化学法制备了高度有序的多孔阳极氧化铝模板,选用CoSO4溶液为电解液,用交流电化学沉积法在多孔阳极氧化铝的柱形微孔内制备含钴纳米线有序阵列.分别用扫描电镜(SEM)、X射线衍射仪对多孔阳极氧化铝模板和纳米线阵列的微观形貌和结构进行分析,结果显示阳极氧化铝膜内确有钴生成,且钴纳米线中的晶粒在生长过程中有(100)晶面...     

插指型SiO_2电流阻挡层对大功率LED外量子效率的影响

为了改善蓝光大功率LED芯片p电极处的电流拥挤现象,提高大功率LED芯片的外量子效率,在ITO透明导电层与p-GaN间沉积插指型SiO_2电流阻挡层。采用等离子体增强化学气相沉积的方法沉积SiO_2薄膜,再经过光刻和BOE湿法刻蚀技术制备插指型SiO_2电流阻挡层。采用SimuLED仿真软件分析插指型SiO_2电流阻挡层对大功率LED芯片电流扩展性能的影响,研究插指型SiO_2电流阻挡层对大功率LED芯片外量子效率的影响。结果发现,插指型SiO_2电流阻挡层结构可以有效改善p电极附近的电流拥挤现象。与没有沉积插指型SiO_2电流阻挡层的大功率LED芯片相比,光输出功率得到显著的提高。在350 mA的输入电流下,沉积插指型SiO_2电流阻挡层后的大功率LED芯片的外量子效率提高了18.7%。     

具有不同临界电流的Bi2223/Ag多芯超导带材的自场损耗和交流电流电压特性

对具有不同临界电流的Ｂｉ２２２３／Ａｇ多芯超导材的交流电流电压特性进行了测量和评价,当传输电流的有效值Ｉｎｎｓ小于临界电流Ｉｃ时,交流电压的大小与传输电流的频率成正比;但Ｉｎｎｓ接近临界电流时,不同频率所对应的交流电压的大小之间的差别减小了,所有的曲线都汇聚成一条曲线,传输电流的频率分别为４０Ｈｚ,６０Ｈｚ,８０Ｈｚ,２００Ｈｚ及３００Ｈｚ时,我们测量了交变传输电流在Ｂｉ２２２３／Ａｇ带材中产生的自场损耗。结果表明当传输电流的频率较低时,实验结果与基于Ｂｅａｎ模型的Ｎｏｒｒｉｓ方程预期的结果一致;另外,实验结果表明存在一个电流Ｉ′,它的值小于任何一个样品的临界电流,本实验中Ｉ′的值是１０安培,在传输相同大小的电流Ｉｎｎ且Ｉｎｎｓ〈Ｉ′时,Ｂｏｉ２２２３／Ａｇ带材的交流损耗与它的临界电流成正比;但当Ｉｎｎｓ〉Ｉ′     

多孔氧化铝模板制备ZnS纳米线阵列及其光致发光谱

利用阳极氧化铝（AAO）模板,采用电化学沉积方法制备出了ZnS纳米线阵列。扫描电子显微镜（SEM）结果显示,AAO模板孔洞分布均匀,孔径基本一致（约50nm）,孔口呈六边形。TEM结果显示硫化锌纳米线的直径约50nm（与AAM模板孔径一致）,长度约为20μm（与AAM模板厚度一致）。电子衍射结果表明ZnS纳米线为多晶结构。比较了AAO模板组装ZnS纳米线阵列前后的光致发光谱,所得光谱显示,组装了ZnS纳米线阵列的模板的光致发光谱比没有组装的空模板相比多出两个发射峰,分别位于409,430nm,且其发光强度随激发波长的增长而增强。解谱分析表明,这即为ZnS纳米线阵列的发光光谱的两个发射峰,是由导带与受主能级间的跃迁发光和施主与受主能级间的复合跃迁发光共同作用所致。发现由于纳米线尺寸的单一性,发射峰窄化明显,半峰全宽较小,这种现象在其他文献中未曾报道过。     

金属Ni纳米线阵列的制备及其磁性能

以Anopore为模板,用电化学沉积的方法制备了磁性金属镍的纳米线阵列.纳米线的直径约为200nm,长度约为50μm,长度直径比L/D达到250.此系统中相邻纳米线间存在着很强的耦合,所以易磁化方向垂直于纳米线的轴向. 关键词：     

Influence of the electrical parameters on the fabrication of copper nanowires into anodic alumina templates

Metallic copper nanowires have been grown into the pores of alumina membranes by electrodeposition from an aqueous solution containing CuSO₄^.and H₃BO₃ at pH 3. In order to study the influence of the electrical parameters on growth and structure of nanowires, different deposition potentials (both in the region where hydrogen evolution reaction is allowed or not) and voltage perturbation modes (constant potential or unipolar pulsed depositions) were applied. In all cases, pure polycrystalline Cu nanowires were fabricated into template pores, having lengths increasing with the total deposition time. These nanowires were self-standing, because they retain their vertical orientation and parallel geometry even after total template dissolution.However, the electrical parameters influence the growth rate, length uniformity and crystal size of the nanowires. Continuous electrodeposition resulted in higher growth rates but less uniform lengths of nanowires grown inside different membrane pores, whilst a square pulse deposition produced a slower growth but quite uniform lengths. Also the grain size, of the order of 50 nm, was slightly influenced by the potential perturbation mode.     

The influence of crystallinity enhancement on the magnetic properties of ac electrodeposited Fe nanowires

Fe nanowire arrays with different degrees of crystallinity were fabricated by ac electrodeposition into anodic aluminium oxide templates. A (110) preferential crystal orientation was observed for all the samples. An extensive investigation of X-ray patterns revealed that the variation of the magnetic properties is a direct consequence of the crystallinity degree of Fe nanowires. The results indicate that the degree of crystallinity varies with electrolyte acidity, waveform and frequency of the ac electrodeposition voltage. Regardless of the waveform and electrolyte acidity, higher deposition frequency induces higher coercivity. The effect of waveform and pH value on the magnetic properties is seen to be more pronounced in the low deposition frequency. Improving the ac electrodeposition conditions increased the coercivity and squareness from almost 1010 Oe and 0.49 to 1810 Oe and 0.99, respectively. It was seen that annealing improved the crystallinity, thereby increasing the coercivity and squareness.     

多种金属/TiO2核壳纳米棒阵列的通用制备方法

使用了一种具有较大通用性的方法制备了金属/二氧化钛(TiO₂)核壳纳米结构. 采用电沉积方法在多孔氧化铝模板(AAO)孔洞中沉积壁厚均一的TiO₂纳米管,TiO₂纳米管的壁厚可以通过沉积时间来控制,而纳米管的直径和长度则由模板孔洞大小和模板厚度决定. 采用这种方法制备的TiO₂纳米管顶端是开放的,而底端连接在电沉积前溅射在AAO模板背面的金膜上. 这种TiO₂纳米管阵列结构适合进行二次电沉积,以它为模板将Pd、Cu、Fe等金属沉积到纳米管中形成核壳纳米棒结构. 这是一种可以用于制备多种金属/TiO₂核壳纳米结构的通用方法,采用这种方法制备的金属/TiO₂核壳纳米棒结构具有填充率高和取向性好的特点,而且它们的壁厚和长度可以通过分别改变两步电沉积的时间来控制.     

Synthesis of gold nanowires with controlled crystallographic characteristics

The controlled fabrication of poly- and single-crystalline Au nanowires is reported. In polycarbonate templates, prepared by heavy-ion irradiation and subsequent etching, Au nanowires with diameters down to 25 nm are electrochemically synthesized. Four-circle X-ray diffraction and transmission electron microscopy measurements demonstrate that wires deposited potentiostatically at a voltage of -1.2 V at 65 °C are single-crystalline and oriented along the [110] direction. By reverse-pulse electrodeposition, wires oriented along the [100] direction are grown. The wires are cylindrical over their whole length. The morphology of the caps growing on top of poly- and single-crystalline wires is a strong indication of the particular crystalline structure of the nanowires. PACS 61.46.-w; 81.07.-b     

Electrical and dielectric characterization of Au/ZnO/n-Si device depending frequency and voltage

Au/Zn O/n-type Si device is obtained using atomic layer deposition(ALD) for Zn O layer, and some main electrical parameters are investigated, such as surface/interface state(Nss), barrier height(Φb), series resistance(Rs), donor concentration(Nd), and dielectric characterization depending on frequency or voltage. These parameters are acquired by use of impedance spectroscopy measurements at frequencies ranging from 10 k Hz to 1 MHz and the direct current(DC) bias voltages in a range from-2 V to +2 V at room temperature are used. The main electrical parameters and dielectric parameters,such as dielectric constant(ε"), dielectric loss(ε"), loss tangent(tan δ), the real and imaginary parts of electric modulus(M and M), and alternating current(AC) electrical conductivity(σ) are affected by changing voltage and frequency. The characterizations show that some main electrical parameters usually decrease with increasing frequency because charge carriers at surface states have not enough time to fallow an external AC signal at high frequencies, and all dielectric parameters strongly depend on the voltage and frequency especially in the depletion and accumulation regions. Consequently, it can be concluded that interfacial polarization and interface charges can easily follow AC signal at low frequencies.     

Electrochemically grown rough-textured nanowires

Nanowires with a rough surface texture show unusual electronic, optical, and chemical properties; however, there are only a few existing methods for producing these nanowires. Here, we describe two methods for growing both free standing and lithographically patterned gold (Au) nanowires with a rough surface texture. The first strategy is based on the deposition of nanowires from a silver (Ag)–Au plating solution mixture that precipitates an Ag–Au cyanide complex during electrodeposition at low current densities. This complex disperses in the plating solution, thereby altering the nanowire growth to yield a rough surface texture. These nanowires are mass produced in alumina membranes. The second strategy produces long and rough Au nanowires on lithographically patternable nickel edge templates with corrugations formed by partial etching. These rough nanowires can be easily arrayed and integrated with microscale devices.     

Si纳米线的固-液-固可控生长及其形成机理分析

以Au膜作为金属催化剂,直接从n-(111)Si单晶衬底上制备了直径为30—60nm和长度从几微米到几十微米的高质量Si纳米线.实验研究了Au膜层厚、退火温度、N2气流量和生长时间对Si纳米线形成的影响.结果表明,通过合理选择和优化组合上述各种工艺条件,可以实现直径、长度、形状和取向可控的纳米线生长.基于固-液-固生长机理,定性阐述了Si纳米线的形成过程.     

Low temperature growth and dimension- dependent photoluminescence efficiency of semiconductor nanowires

Low temperature growth and dimension dependent photoluminescence (PL) efficiency of semiconductor nanowires were investigated with CdS as a model system. The CdS nanowires were prepared with a simple, low temperature metal-organic chemical vapor deposition (MOCVD) process via the vapor–liquid–solid (VLS) mechanism. The low growth temperature of 360 °C was made possible with a newly developed single-source precursor of CdS and by using sputtered Au as the catalyst for the VLS growth. The length and diameter of the nanowires were adjusted by reaction time and sputtering conditions of Au, respectively. Nanowires of up to several μm in length and 20 to 200 nm in diameter were obtained. The PL quantum yield of the nanowires was found to decrease with increasing wire length, but to increase with decreasing wire diameter. This dimension-dependent PL efficiency of one-dimensional nanostructure, unlikely resulting from the quantum size confinement effect, appears to be a new observation that carries application significance. PACS 74.25.Gz; 78.55.Et; 78.67.Lt     

High quality ZnS/Au/ZnS transparent conductive tri-layer films deposited by pulsed laser deposition

ZnS/Au/ZnS tri-layer films were deposited on quartz glass substrates by pulsed laser deposition. The influence of Au layer thickness on optical and electrical properties of the tri-layer ZnS/Au/ZnS was studied. X-ray diffractometer (XRD) and scanning electron microscope were employed to characterize the crystalline structure and surface morphology of the tri-layer films. Hall measurements, ultraviolet and visible spectrophotometer, four-point probe were used to explore the optoelectronic properties of the ZnS/Au/ZnS. The increase of Au layer thickness resulted in the decreased resistivity, the increased carrier concentration, and the declined transmittance in the visible light region.     

Copper nanowires electrodeposited in etched single-ion track templates

The replication of single-ion track templates opens up the possibility of accessing electrical properties of nanowires without using lithographic techniques. Polycarbonate foils of 30-m thickness were irradiated with single swift heavy ions (e.g. Au 11.4 or Xe 8.3 MeV/nucleon). By controlled one-sided etching of the damage trail caused by the ion, templates containing a single conical pore were prepared. The narrow pore openings had diameters down to 25 nm and opening angles up to 2°. By electrochemical deposition of copper, single conical wires were obtained. The electric current recorded during electrodeposition reflects the geometry of the pore. The wires were provided with electrical contacts. Current–voltage measurements confirmed that their resistance was ohmic. The wires could withstand a maximum current density above 10⁸ A/cm². PACS 61.46.+w; 81.07.-b