Mechanisms of low-temperature high-frequency conductivity in systems with a dense array of Ge<Subscript>0.7</Subscript>Si<Subscript>0.3</Subscript> quantum dots in silicon

High-frequency (HF) conductivity in systems with a dense (with a density of n = 3 × 10¹¹ cm^?2) array of self-organized Ge_0.7Si_0.3 quantum dots in silicon with different boron concentrations n_B is determined by acoustic methods. The measurements of the absorption coefficient and the velocity of surface acoustic waves (SAWs) with frequencies of 30–300 MHz that interact with holes localized in quantum dots are carried out in magnetic fields of up to 18 T in the temperature interval from 1 to 20 K. Using one of the samples (n_B = 8.2 × 10¹¹ cm^?2), it is shown that, at temperatures T ≤ 4 K, the HF conductivity is realized by the hopping of holes between the states localized in different quantum dots and can be explained within a two-site model in the case of

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, where ω is the SAW frequency and τ₀ is the relaxation time of the populations of the sites (quantum dots). For T > 7 K, the HF conductivity has an activation character associated with the diffusion over the states at the mobility threshold. In the interval 4 K < T < 7 K, the HF conductivity is determined by a combination of the hopping and activation mechanisms. The contributions of these mechanisms are distinguished; it is found that the temperature dependence of the hopping HF conductivity approaches saturation at T* ≈ 4.5 K, which points to a τ₀ ≤ 1. A value of τ₀(T*) ≈ 5 × 10^?9 s is determined from the condition ωτ₀(T*) ≈ 1.

     

An Ellipsometric Investigation of the Optical Properties of Ru<Subscript>2</Subscript>Ge<Subscript>3</Subscript> and Ru<Subscript>2</Subscript>Sn<Subscript>3</Subscript> Compounds

Ellipsometric investigations of the optical properties of Ru₂Ge₃ and Ru₂Sn₃ intermetallic compounds are carried out in the wavelength range from 0.22 to 15 μm. The nature of interband light absorption is analyzed based on a comparative analysis of the experimental and theoretical frequency dependences of an optical conductivity. The obtained results confirm the existence of energy gaps at the Fermi level in the electronic spectra of these materials predicted earlier by the band-structure calculations.     

Wave mixing in nominally undoped Sn<Subscript>2</Subscript>P<Subscript>2</Subscript>S<Subscript>6</Subscript> at high light intensities

The intensity dependence of the photorefractive response of Sn₂P₂S₆ is studied for the Kr⁺-laser wavelength of 647 nm and pump-beam intensities of up to 10 W/cm². A considerable enhancement of the two-beam coupling gain factor with increasing intensity at a grating spacing of ≃1 μm is attributed to a light-induced increase of the effective trap density. The large gain reached at high intensities is applied for the build up of a double phase conjugate mirror with a sub-millisecond switch-on time.     

Silicon isotope separation utilizing infrared multiphoton dissociation of Si<Subscript>2</Subscript>F<Subscript>6</Subscript> irradiated with two-frequency CO<Subscript>2</Subscript> laser lights

Silicon isotope separation has been performed utilizing the infrared multiphoton dissociation (IRMPD) of Si₂F₆ irradiated with two-frequency CO₂ laser lights. The two-frequency excitation method improved the separation efficiency by keeping the high enrichment factors. For example, Si₂F₆ with the ²⁸Si fraction of 99.4% was obtained at 40.0% dissociation of Si₂F₆ after the simultaneous irradiation of 100 pulses with 966.23 cm^-1 photons (0.089 J/cm²) and 954.55 cm^-1 photons (0.92 J/cm²), while 1000 pulses were needed to obtain 99.0% of ²⁸Si at 27.2% dissociation in the case of single frequency irradiation at 954.55 cm^-1 (0.92 J/cm²). The single-step enrichment factors of ²⁹Si and ³⁰Si increased with increasing Si₂F₆ pressure. The reason for this enhancement has been discussed in terms of the rotational and vibrational relaxations by collisions with ambient gases. PACS 42.62.Cf; 82.30.Lp; 82.50.Bc     

Investigation of the dielectric,optical and photorefractive properties of Sb-doped Sn<Subscript>2</Subscript>P<Subscript>2</Subscript>S<Subscript>6</Subscript> crystals

In this work we report results on electro-physical, optical and photorefractive investigations for Sb-doped Sn₂P₂S₆ crystals. The crystals are obtained by two methods: the vapour-transport technique and the Bridgman technique using stoichiometric Sn₂P₂S₆ composition with different amounts of antimony in the initial compound. The good optical quality of the crystals obtained with the Bridgman technique is underlined. The dependences of the photorefractive two-beam coupling coefficient and the grating build-up time are investigated at the wavelength of 633 nm. It is found that the sample doped with 1.5% of Sb is characterized by an optimal combination of the main photorefractive parameters exhibiting a fairly high two-beam coupling coefficient (up to 20 cm⁻¹) and a short response time (1.3 ms) that is the shortest among all the previously studied Sn₂P₂S₆ crystals in the red spectral region.     

Threshold current density in ZnS/MgBeZnS quantum well ultraviolet lasers

We calculate optical gain coefficient and threshold current density in ZnS/MgBeZnS quantum wells (QWs) because ZnS/MgBeZnS QWs are useful for the fabrication of an ultraviolet laser on zinc-blende substrates. The threshold current density in a ZnS/MgBeZnS QW laser diode (LD) with a 10 nm ZnS active layer is calculated to be 1.63 kA/cm². By comparing the measured J _th in a CdZnSe/ZnSSe/ZnMgSSe QW LD with that calculated by us, it is expected that the threshold current density in ZnS/MgBeZnS QW LDs measured by experiment is larger than that calculated by our calculation method.     

Spin dynamics in oriented ferromagnetic nanowires Ge<Subscript>0.99</Subscript>Co<Subscript>0.01</Subscript>

The magnetic properties of one-dimensional oriented nanowires Ge_0.99Co_0.01 grown in pores of anodized aluminum oxide membranes are investigate using ferromagnetic resonance spectroscopy. The electron spin resonance signals of the magnetically ordered cobalt subsystem and the charge-carrier subsystem are identified. It is revealed that the anisotropy field at 4 K is equal to 400 Oe and aligned parallel to the nanowire axis. The transverse relaxation time of spin waves at 4 K is estimated to be ～10^?10 s. It is shown that the magnetic properties of nanowires are predominantly determined by the ferromagnetism of Co and GeCo alloy clusters.     

Double scattering effect and its application in Si<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript>x</Subscript> solid solution diagnosis

The effect of double scattering of Ar⁺ ions from the surface of C, Al, Si, Ti, Ge, and In targets is studied by the method of slow scattered ion spectroscopy. Based on this effect, a technique to estimate the cluster phase of germanium atoms in the Si_1−x Ge_x solid solution with a small (5–10%) content of germanium is suggested.     

Magnetoelectric Cr<Subscript>2</Subscript>O<Subscript>3</Subscript> and relativity theory

Based on the dielectric continuum phonon model, uniaxialmodel and force balance equation the mobility of two dimensional electrongas in wurtzite Al_xGa_1-xN/GaN/Al_xGa_1-xN quantum wells isdiscussed theoretically within the temperature range dominated by opticalphonons. The dependences of the electron mobility on temperature, Al molarfraction and electron sheet density are presented including hydrostaticpressure effect. The built-in electric field is also taken into account. Itis found that under normal pressure the main contribution to the mobility isfrom the scattering of interface optical phonons in narrow (for well widthd < 12 Å) and wide (for d > 117 Å and d > 65 Å for finitelythick barriers and infinitely thick ones, respectively) wells, whereas thatis from the scattering of confined optical phonons in a well with anintermediate width. It is shown that the electron mobility decreases withincreasing Al molar fraction and temperature, whereas increases obviouslywith increasing electron sheet density. The theoretical calculated electronmobility is 978 cm²/V?s which is higher than an available experimentaldata 875 cm²/V?s when x equals to 0.58 at room temperature. Theresults under hydrostatic pressure considering the modification of strainindicate that the mobility increases slightly as hydrostatic pressureincreases from 0 to 10 GPa.     

Optical second harmonic generation and its photoinduced dynamics in ferroelectric semiconductor Sn<Subscript>2</Subscript>P<Subscript>2</Subscript>S<Subscript>6</Subscript>

By means of optical pump–probe technique, the ultrafast dynamics of nonlinear optical response of the ferroelectric semiconductor Sn₂P₂S₆ crystal excited with a femtosecond laser pulse has been investigated. It has been shown that, under the action of femtosecond pulses, change in optical second harmonic generation occurs in the sample, which can be due to screening of existing electric polarization.     

Specific features of the electronic structure and spectral characteristics of the Gd<Subscript>5</Subscript>Si<Subscript>3</Subscript> compound

The electronic structure and optical properties of the hexagonal intermetallic compound Gd₅Si₃ are investigated. The spin-polarization calculation of the band spectrum is performed in the local spin density approximation, taking account for the strong electron correlations in the 4 f shell of a Gd ion (LSDA + U method). Optical constants of the compound in the wavelength range of 0.22–15 μm are determined by the ellipsometry technique and some spectral characteristics are calculated. The frequency dependence of optical conductivity in the light quantum absorption region is analyzed on the basis of the calculated electron density of states.     

Intrinsic superconducting transport properties of ultra-thin Fe<Subscript>1+<Emphasis Type="Italic">y</Emphasis></Subscript>Te<Subscript>0.6</Subscript>Se<Subscript>0.4</Subscript> microbridges

We investigated the superconducting properties of Fe_1+y Te_0.6Se_0.4 single-crystalline microbridges with a width of 4 μm and thicknesses ranging from 20.8 to 136.2 nm. The temperature-dependent in-plane resistance of the bridges exhibited a type of metal-insulator transition in the normal state. The critical current density (J _c) of the microbridge with a thickness of 136.2 nm was 82.3 kA/cm² at 3K and reached 105 kA/cm² after extrapolation to T = 0 K. The current versus voltage characteristics of the microbridges showed a Josephson-like behavior with an obvious hysteresis. These results demonstrate the potential application of ultra-thin Fe-based microbridges in superconducting electronic devices such as bolometric detectors.     

Coherent semilinear oscillator with Sn<Subscript>2</Subscript>P<Subscript>2</Subscript>S<Subscript>6</Subscript>:Sb crystals

We present experimental results for the semilinear oscillator geometry based on Sn₂P₂S₆:Sb photorefractive crystals. The samples with strong two-wave mixing gain demonstrate degenerate oscillation regime. A mirrorless oscillation is also observed.     

Lasing from a solid-state Ca<Subscript>3</Subscript>Ga<Subscript>2</Subscript>Ge<Subscript>3</Subscript>O<Subscript>12</Subscript>:Nd<Superscript>3+</Superscript> laser at a high power of diode pumping

Experimental data for cw lasing from a compact solid-state laser based on a neodymium-doped calcium-gallium-germanium-garnet crystal (Ca₃Ga₂Ge₃O₁₂:Nd³⁺) at a wavelength of 1.06 μm in the case of intense diode pumping are reported. The laser output reaches 0.7 W for a cavity 15 mm long and an active element 1 mm thick. It is shown that the output power is limited by a thermal lens placed in the active element.     

Irradiation of amorphous Ta<Subscript>42</Subscript>Si<Subscript>13</Subscript>N<Subscript>45</Subscript> film with a femtosecond laser pulse

Films of 260 nm thickness, with atomic composition Ta₄₂Si₁₃N₄₅, on 4″ silicon wafers, have been irradiated in air with single laser pulses of 200 femtoseconds duration and 800 nm wave length. As sputter-deposited, the films are structurally amorphous. A laterally truncated Gaussian beam with a near-uniform fluence of ∼0.6 J/cm² incident normally on such a film ablates 23 nm of the film. Cross-sectional transmission electron micrographs show that the surface of the remaining film is smooth and flat on a long-range scale, but contains densely distributed sharp nanoprotrusions that sometimes surpass the height of the original surface. Dark field micrographs of the remaining material show no nanograins. Neither does glancing angle X-ray diffraction with a beam illuminating many diffraction spots. By all evidence, the remaining film remains amorphous after the pulsed femtosecond irradiation.     

Second harmonic generation in thin Ge<Subscript>35</Subscript>Sb<Subscript>5</Subscript>S<Subscript>60</Subscript> films

Generation of the second optical harmonic is investigated in 250 to 1500-nm thick films of Ge₃₅Sb₅S₆₀ chalcogenide glass. It is shown that a decrease in quadratic optical susceptibility in thicker films can result from a decrease in the bulk contribution from the electric dipole to the susceptibility and can be used in nonlinear optical diagnostics of the films.     

The Formation of Dimeric Centers of Copper,Iron and Gadolinium in Modified Pb<Subscript>5</Subscript>Ge<Subscript>3</Subscript>O<Subscript>11</Subscript>

It is discovered that the electron paramagnetic resonance (EPR) spectrum of the doubly charged copper centers occurs in single crystals of Pb₅Ge₃O₁₁ doped with gadolinium or iron after annealing in an atmosphere containing chlorine and bromine. Similar annealing of the crystals doped with copper in a chlorine and fluorine atmosphere leads to redistribution of the intensities of the EPR spectra of two types of Cu²⁺ centers. The influence of annealing on the ongoing intensity of spectra of the dimeric triclinic centers Fe³⁺–A, Gd³⁺–A (where A represent Cl^?, Br^?, O^2?, F^?) was the subject of this research. Consideration is given to the mechanisms for changing the charge state and association of copper center with defects.     

Observation of Bose condensation in (Pb<Subscript>0.4</Subscript>Sn<Subscript>0.6</Subscript>)<Subscript>0.86</Subscript>In<Subscript>0.14</Subscript>Te semiconductor solid solutions using Mössbauer spectroscopy

⁷³As(⁷³Ge) Mössbauer emission spectroscopy is used to ascertain that the transition of the (Pb_0.4Sn_0.6)_0.86In_0.14Te solid solution to a superconducting state is accompanied by a change in electronic density at the cation sites, and spatial inhomogeneities in the Bose condensate of Cooper pairs are revealed.     

Electronic structure of the TbMn<Subscript>0.33</Subscript>Ge<Subscript>2</Subscript> compound: Band calculation and optical experiment

The results of the investigation of the electronic structure and optical properties of the TbMn_0.33Ge₂ compound have been presented. The spin-polarized calculations of the band spectrum have been performed within the framework of the local spin density approximation (LSDA) with a correction for strong correlations in the 4f shell of the rare-earth ion (the LSDA + U method). The optical constants have been measured using the ellipsometric method and a number of spectral and electronic characteristics of the compound under investigation have been determined over a wide range of wavelengths. The interband part of the experimental dependence of the optical conductivity has been interpreted using the results of the calculation of the electron density of states.     

Electronic structure and half-metallic property of Si<Subscript>3</Subscript>CaC<Subscript>4</Subscript>

The electronic structures and magnetic properties of Si₃CaC₄ in zinc-blende phase has been studied by employing the first-principles method based on density functional theory (DFT). The calculations predict stable ferromagnetic ground state in Si₃CaC₄, resulting from calcium substitution for silicon. The calculated total magnetic moment is 2.00 μ _B per supercell, which mainly arises from the Ca and neighboring C atoms. Band structures and density of states studies show half-metallic (HM) ferromagnetic property for Si₃CaC₄. The ferromagnetic coupling is generally observed between the Ca and C atoms. The ferromagnetism of Si₃CaC₄ can be explained by the hole-mediated double exchange mechanism. The sensitivity of half-metallicity of Si₃CaC₄ as a function of lattice constant is also discussed, and the half-metallicity can be kept in a wider lattice constant range.