基于室温脉冲量子级联激光器的NO气体检测中的光谱处理方法研究

报导了采用基于室温脉冲量子级联激光器的脉内光谱检测技术,利用中心波长为1904 cm^-1的量子级联激光器,在实验室对NO气体样品进行检测的研究结果. 针对单线直接吸收光谱反演算法进行了研究,介绍了基线拟合的最小二乘算法以获取其吸光度,根据HITRAN数据库中相应吸收谱线的吸收线强,采用扫描积分实现了气体浓度的反演,避免了标气标定造成的误差及污染;通过拟合残差分析得到了系统的检测限,达到34×10^-6 m.     

基于室温量子级联激光器的脉内光谱技术测量N_2O

中红外激光光源覆盖了大鼍气体的基频吸收带,尤其适合于痕量气体的高灵敏检测.其中具有高输出功率、宽调谐范围、能够在室温工作的量子级联激光器为高灵敏痕量气体检测技术的研究提供了理想的光源.基于脉冲量子级联激光器的脉内光谱技术提供了一种简单而又有效的测量痕量气体的方法.当一个长激发脉冲作用在激光器上时,激光器的频率随着脉冲持续时间的增加而线性减小,从而在单个脉冲上扫描出被测气体分子的特征吸收谱线,实现对目标气体的定性或者定量分析.介绍了基于分布式量子级联激光器的脉内光谱技术,并采用该技术对N_2O进行了光谱测量.一个500 ns的长激发脉冲应用在脉冲量子级联激光器上用于快速波长扫描,达到接近1 cm~(-1)的线性调谐范围,得到了中心在1 274 cm~(-1)附近的N_2O的吸收谱线,与HITRAN数据库相应的N_2O吸收谱线有着良好的一致性.     

基于量子级联激光光谱技术的HONO和N2O4气体检测

解析大气中HONO和N₂O₄的光化学循环及其来源,需要对其质量分数进行准确测量,而质量分数测量的前提是吸收线参数的准确度量。采用7.8μm室温连续量子级联激光器和长光程多次反射吸收池对实验产生的HONO和N₂O₄气体进行了同时测量,确定了两种气体的吸收线频率。根据已知的1280.4 cm^-1处trans-HONO的吸收线强,计算得到trans-HONO的质量分数为(0.72±0.04)×10^-6,相应的系统最低检测限为(11.15±0.50)×10^-9。利用中红外量子级联光谱技术同时对HONO和N₂O₄进行分析研究,所得到的谱线参数也为HONO和N₂O₄质量分数的实时监测、化学反应过程的分析等提供了重要的依据。     

可调谐半导体激光吸收光谱中的吸光度反演算法研究

可调谐半导体激光吸收光谱具有高分辨、高灵敏度和快速测量等特点,已经在环境检测、工业过程检测等方面得到广泛应用。在直接吸收光谱技术中,吸光度曲线以及积分吸光度的确定对于气体浓度反演、线强校正等都有重要的作用。对激光直接吸收光谱中吸光度和吸光度积分反演算法进行了研究,采用分段多项式基线拟合方法来消除激光器光强波动的影响,得到吸光度,再用非线性拟合Levenberg-Marquardt算法进行线形拟合来获取积分吸光度。通过水气吸收谱线的检测对算法进行了验证。     

基于量子级联激光器的红外光谱技术评述

量子级联激光器是一种新型的红外相干光源。利用量子理论与带隙工程,量子级联激光器可实现3 μm到100 μm波长范围内的任意输出波长。由于大多数气体分子的特征光谱都集中在中红外波段,而中红外量子级联激光器具有功率高、线宽窄、扫描速度快等独特的优点,因此,基于量子级联激光器的红外光谱技术已成为气体检测技术的研究热点。尤其是,近年来室温激光器性能得到不断的完善,输出功率和电光转换效率得到了极大的提高,这在很大程度上推动了红外激光光谱技术的迅速发展。本文根据工作原理,分别介绍了基于直接吸收谱检测、相位调制光谱检测、光声调制光谱检测和法拉第旋光效应光谱检测的量子级联激光器红外光谱检测技术,并对其实现方法和应用情况进行了介绍。     

基于单一量子级联激光器的大气多组分气体（CO、N2O、H2O）同时测量方法

近红外波段的气体吸收强度低,不利于痕量气体的测量。利用分子在中红外波段的基频吸收特性,使用单个新型室温连续输出量子级联激光器（CW-QCL）结合波长调制光谱技术（WMS）和长程光学吸收池,建立了一套高灵敏度和高精度的大气多组分温室气体同时检测的激光光谱系统。该系统的输出波数范围为2202.8～2205.6 cm^-1,覆盖了CO、N₂O和H₂O的中心吸收谱线。实验测试结果表明：在1 s的时间分辨率下,CO、N₂O和H₂O的测量精度分别为1.83×10^-8,1.86×10^-9,1.19×10^-4;当满足最佳积分时间（100 s）时,系统的最低检测限可以达到1.8×10^-9（CO）,0.16×10^-9（N₂O）,1.5×10^-5（H₂O）。通过长时间测量和分析可知,所提系统部件简单,使用方便,满足大气多组分气体...     

可调谐二极管激光吸收光谱氟化氢检测（英文）

研究分布式反馈激光器的温度电流调谐特性及氟化氢气体在近红外波段的吸收线分布特征.利用归一化洛伦兹函数实现Voigt线型快速近似计算,并分析气体吸光度曲线的Voigt线型拟合以及波长扫描气体浓度反演算法.选择1.28μm附近氟化氢气体单根吸收线作为目标吸收线设计可调谐二极管激光吸收光谱系统,对已知标准浓度氟化氢气体配置的不同浓度气体进行测量.系统的检测限达到1.12ppm-m,且具有较高的测量准确度和长期稳定性,满足氟化氢气体实时在线监测的需要.     

基于室温脉冲工作量子级联激光器的脉间光谱技术研究

量子级联(QC)激光器是唯一能在室温产生中红外辐射的半导体激光器。它的宽调谐范围、高输出功率和单模工作的特性,使得它非常适用于高分辨率光谱分析。结合中红外光谱区是气体分子的基频强吸收特性,基于室温脉冲工作的量子级联激光器的吸收光谱检测技术以其灵敏度高、选择性强及响应快速等特点,成为痕量气体探测的有效方法。介绍了基于分布式量子级联激光器的脉间光谱技术,通过分析比较不同工作参数下的激光光谱信号,寻求最佳的激光器工作参数,并且在选定的工作参数下对目标气体的吸收谱线进行测量,得到了中心在2178.2cm-1附近的N2O的吸收谱线。     

2.9THz束缚态向连续态跃迁量子级联激光器研制

采用气源分子束外延技术生长了GaAs/AlGaAs束缚态向连续 态跃迁的太赫兹量子级联激光器材料, 基于半绝缘等离子体波导工艺制作了太赫兹量子级联激光器. 测量了激光器的发射光谱和功率-电流-电压关系曲线, 研究了器件的激光特性. 器件激射频率约2.95 THz, 脉冲模式下, 最高工作温度为67 K. 连续波模式下, 阈值电流密度最低为230 A/cm², 最大光输出功率1.2 mW, 最高工作温度为30 K. 关键词： 太赫兹 量子级联激光器 分子束外延 波导     

半绝缘等离子体波导太赫兹量子级联激光器工艺研究

采用气态源分子束外延设备生长了GaAs/AlGaAs束缚态到连续态跃迁结构的太赫兹（THz）量子级联激光器（QCL）有源区结构,研究了半绝缘等离子体波导THz QCL的器件工艺,采用远红外傅里叶变换光谱仪以及探测器测量了器件的电光特性.器件激射频率为32 THz,10 K下的阈值电流密度为275 A/cm². 关键词： 太赫兹 量子级联激光器 波导 器件工艺     

Quantum cascade laser-based spectrometer for high sensitive measurements of trace gases in air

A quantum cascade(QC)laser-based spectrometer is developed to measure trace gases in air.The proposed spectrometer is tested for N2O,and the results presented in this letter.This system takes advantage of recent technology in QC lasers by utilizing intra-pulse scan spectroscopy,which allows high sensitive measurement.Without calibration gases,the gas concentration can be calculated with scan integration and the corresponding values from the HITRAN04 database.By analyzing the Allan variance,a detection limit of 2 ppb is obtained.Continuous measurement of N2O sampled from ambient air shows the applicability of the proposed system for the field measurements of gases of environmental concern.     

基于中红外分布反馈量子级联激光器的光声光谱技术用于痕量甲烷气体检测

由于工业监控和环境检测的需要,甲烷气体检测日益得到人们的关注。研究了基于中红外分布反馈量子级联激光器(DFB-QCL)的光声光谱技术,并应用于痕量甲烷的检测。自主研发的DFB-QCL室温工作时的激射波长在7.6μm附近,覆盖了甲烷的特征吸收谱线1 316.83cm-1。待测甲烷气体充入亥姆霍兹光声谐振腔中,DFB-QCL的工作频率为234Hz、室温脉冲工作时峰值功率为80mW。中红外光经过甲烷吸收后,产生的声波信号经麦克风检测,由锁相放大器对信号进行采集并输入计算机进行处理。按信噪比为1计算,得到甲烷的探测极限为189nmol.mol-1。     

Application of quantum cascade lasers to trace gas analysis

Quantum cascade (QC) lasers are virtually ideal mid-infrared sources for trace gas monitoring. They can be fabricated to operate at any of a very wide range of wavelengths from ∼ 3 μm to ∼ 24 μm. Seizing the opportunity presented by mid-infrared QC lasers, several groups world-wide are actively applying them to trace gas sensing. Real world applications include environmental monitoring, industrial process control and biomedical diagnostics. In our laboratory we have explored the use of several methods for carrying out absorption spectroscopy with these sources, which include multipass absorption spectroscopy, cavity ring down spectroscopy (CRDS), integrated cavity output spectroscopy (ICOS), and quartz-enhanced photoacoustic spectroscopy (QEPAS). PACS 42.62.Fi; 42.62.Be; 07.88.+y; 33.20.Ea     

A trace methane gas sensor using mid-infrared quantum cascaded laser at 7.5 μm

Presented is a compact instrument developed for in situ high-stable and sensitive continuous measurement of trace gases in air, with results shown for ambient methane (CH₄) concentration. This instrument takes advantage of recent technology in thermoelectrically cooled pulsed Fabry–Perot (FP) quantum cascaded (QC) laser driving in a pulse mode operating at 7.5 μm to monitor a well-isolated spectral line near the ν4 fundamental band of CH₄. A high-quality liquid nitrogen cooled mercury cadmium telluride mid-infrared detector with time discriminating electronics is used along with a total reflection coated gold ellipsoid mirror offering 20 cm single pass optical absorption in an open-path cell to achieve stability of 5.2 × 10^?3 under experimental condition of 200 ppm measured ambient CH₄. The instrument operates continuously, and integrated software for laser control using direct absorption provides quantitative trace gas measurements without calibration. One may substitute a QC laser operating at a different wavelength to measure other gases. The instrument can be applied to field measurements of gases of environmental concern.     

Optical parametric oscillator based difference frequency laser source for photoacoustic trace gas spectroscopy in the 3 μm mid-IR range

We report on the extension of the emission wavelength range of a nanosecond pulsed commercial optical parametric oscillator (OPO) towards the infrared. By difference frequency mixing the idler of the OPO with the fundamental of its Nd:YAG pump laser the wavelength range from 2.5–4.5 μm is covered at considerable pulse energies. This laser source is then applied for the first time to photoacoustic trace gas spectroscopy in the fundamental C---H stretch band located around 3.3 μm. Spectra of single- and multi-component gas mixtures of volatile organic compounds are recorded and analyzed with respect to composition and concentration. The detection limits for the individual substances within the gas mixtures are found in the lower parts per million (ppm) range.     

Laboratory spectroscopic calibration of infrared tunable laser spectrometers for the in situ sensing of the Earth and Martian atmospheres

This paper reports the laboratory spectroscopic calibration of near- and mid- infrared tunable laser spectrometers used to determine in situ trace gases in the middle atmosphere of the Earth or in development for the investigation of the Martian atmosphere. The use of infrared absorption spectroscopy to measure gas concentrations requires a proper knowledge of the rotation–vibration spectra of the targeted molecules as well as a proper investigation of the tunable laser spectral emission properties. This last point is of particular importance for the use of new-generation lasers like quantum-cascade lasers or room-temperature multi-quantum wells laser diodes emitting between 2 and 3 μm. Purposely, we have developed various laboratory tunable laser set-ups to obtain accurate line strengths and pressure-broadening coefficients of atmospheric molecules and to test the performances of cutting-edge laser technology for trace gas sensing. In this paper, the spectroscopic calibration work is described. Several atmospheric applications of tunable laser are reported to stress the impact on concentration retrieval of a proper spectroscopic calibration work. PACS 07.57.T; 93.85; 07.87     

Structural characterization and optoelectronic properties of GaN thin films on Si(111) substrates using pulsed laser deposition assisted by gas discharge

GaN films have been grown on Si(111) substrates with a thin AlN buffer layer using pulsed laser deposition (PLD) assisted by gas discharge. The crystalline quality, surface morphology and optoelectronic properties of the deposited films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) spectroscopy, and room-temperature Van der Pauw–Hall measurements. The influence of the deposition temperature in the range 637–1037 K on the crystallinity of GaN films, the laser incident energy in the range 150–250 mJ/pulse on the surface morphology and the optoelectronic properties were systematically studied. The XRD analysis shows that the crystalline quality of the GaN films improves with increasing deposition temperature to 937 K, but further increase of the deposition temperature to 1037 K leads to the degradation of the crystalline quality. AFM results show that the surface roughness of the GaN films can be decreased with increasing laser incident energy to 220 mJ/pulse. Further increase of the laser incident energy to 250 mJ/pulse leads to an increase in the surface roughness. The optoelectronic properties of GaN films were also improved by increasing the laser incident energy to 220 mJ/pulse. GaN films which have a n-type carrier concentration of 1.26×10¹⁷ cm^-3 and a mobility of 158.1 cm²/Vs can be deposited at a substrate temperature of 937 K, a deposition pressure of 20 Pa and a laser incident energy of 220 mJ/pulse. Their room-temperature PL spectra exhibit a strong band-edge emission at 365 nm. PACS 81.15.Fg; 81.05.Ea; 78.20.-e; 73.61.Ey; 78.66.Fd     

Fabrication of p-type ZnMgO films via pulsed laser deposition method by using Li as dopant source

p-Type Zn_0.9Mg_0.1O thin films have been realized via monodoping of Li acceptor by using pulsed laser deposition. The Li-doped Zn_0.9Mg_0.1O thin films possessed a good crystallinity with a (0 0 0 2) preferential orientation and a high transmittance in the visible region. Secondary ion mass spectroscopy revealed that Li has been successfully incorporated into the Zn_0.9Mg_0.1O films. The obtained films with the best electrical properties show a hole concentration in the order of 10¹⁷ cm⁻³ and a room-temperature resistivity in the range of 58-72 Ω cm.