Texture development and magnetic properties of [ZrO2/CoPt]n/Ag nanocomposite films

The L1₀ CoPt films with (0 0 1) preferred orientation are achieved by fabricating on the glass substrates and post annealing at 600° C for 30 min. The preferred orientation of [ZrO₂/CoPt]_n/Ag films dependence of the Ag underlayer thickness, ZrO₂ and CoPt interlayer thickness is investigated. A large perpendicular magnetic anisotropy and a nearly perfect L1₀ CoPt (0 0 1) texture are obtained in the [ZrO₂ (3 nm)/CoPt (5 nm)]₃/Ag (10 nm) film. The existence of ZrO₂ plays an important role in reducing the intergranular interactions and in determining the size of CoPt grains. Magnetic reversal in textured CoPt films are close to a Stoner-Wolfarth rotation.     

Magnetic, electric, and optical functionalities of (PLZT)x(BiFeO3)1−x ferroelectric-ferromagnetic thin films

We have prepared a series of (PLZT)_x(BiFeO₃)_1−x transparent thin films with thickness of 300 nm by a thermal pyrolysis method. Only films with x≦0.10 formed a single phase of perovskite structure. The film where x=0.10 exhibited both ferromagnetic and ferroelectric properties at room temperature with spontaneous magnetization and coercive magnetic fields of 0.0027μ_B and 5500 G, respectively. The remanent electric polarization and coercive electric field for the film where x=0.10 were 3.0 μC/cm² and 24 kV/cm, respectively. Additionally, films with 0.02≦x≦0.10 showed both magneto-optical effects and the second harmonic generation of transmitted light.     

Perpendicular anisotropy and magneto-optical Kerr effect of (Ni/Pd) multilayers

Nickel film, with total thickness t_Ni in the range 1000-2000 Å, is known to exhibit perpendicular magnetic anisotropy (PMA), if the film has been deposited at room temperature. This phenomenon is due to the magneto-elastic (ME) effect. The same is also true for the (Ni/Pd)_n multilayers, where n is the period (n≥3). In this paper, we have made two kinds of multilayers: one, which does not have a Pd cap layer, belongs to the A-group, and the other, which has, belongs to the B-group. The polar Kerr rotation θ_k, the polar Kerr ellipticity ε_k, and the figure of merit (θ_k)²R, where R is the reflectance, were measured for the two wavelengths, i.e. λ=633 and 442 nm, respectively. The effective PMA energy K_⊥ was measured from the vibrating sample magnetometer. It was found that the most favorable multilayer for the magneto-optical (MO) application exists among the A-group samples: i.e. the t_Ni=1300 Å, t_Pd=50 Å (seed layer), and n=1 sample. We obtained θ_k=−9.76 min, ε_k=−9.13 min, (θ_k)²R=1.51 (rad)² at λ=442 nm, and K_⊥=3.21×10⁶ erg/cc for this optimal multilayer. Finally, the effects of the Pd seed layer on PMA and MO are also studied.     

Magnetic Compton profiles of Fe thin film and anisotropy of Co/Pd multilayer

The magnetic Compton profiles (MCPs) of Fe thin film with 1 μm thickness have been successfully measured, using polyethylene terephtalate (PET) substrates with 4 μm thickness to reduce scattering photons from substrate.We have succeeded for the first time to observe the anisotropy of MCPs in the Co/Pd multilayer. The magnetic out-of-plane anisotropy of the current Co (0.8 nm)/Pd (1.6 nm) multilayer sample can be explained by the model of a large number of the |m|=1 states of 3d-bands.     

Seedlayer interface enhanced magnetic anisotropy in CoPt (0 0 0 2)-textured films

The effects of interface roughness of Ta seedlayer on the structural and magnetic properties of Co₇₂Pt₂₈(20 nm)/Ru(30 nm)/Pt(2 nm)/Ta(5 nm)/glass were investigated. Uniaxial perpendicular magnetic anisotropy (8.6×10⁶ ergs/cc), coercivity (5.5 kOe) and nucleation field (−2.8 kOe) in the Co₇₂Pt₂₈ thin film sputter-deposited on relatively smooth surface of Ta seedlayer were achieved. The results showed that relatively smoother interface roughness of Ta seedlayer improved the CoPt/Ru (0 0 0 2) texture and magnetic properties.     

Curie temperatures of CoPt ultrathin continuous films

The effects of layer thickness and thermal annealing on Curie temperature have been studied for CoPt ultrathin continuous layers in AlN/CoPt multilayer structures. It is found that there exists a critical thickness below which Curie temperature rapidly decreases due to the loss of spin-spin interactions in the vicinity of interface. After high temperature annealing, the in-plane lattice constant of CoPt film is increased and the exchange coupling parameter is decreased. Consequently, Curie temperatures decrease for some films with large thickness, compared with as-deposited state. Upon annealing at 600?^°C, CoPt undergoes ordering transformation, which also contributes to the degradation of the Curie temperature. However, when the CoPt film thickness is below 2?nm, the Curie temperature is increased after annealing. Especially for 1?nm thick film, the Curie temperature is strikingly increased from 173?^°C to 343?^°C after annealing at 600?^°C. This effect is attributed to the out-of-plane lattice deformation of CoPt thin layers in AlN/CoPt multilayer structures.     

Magnetization behavior of nanomagnets for patterned media application

Bit patterned media (BPM) which utilize each magnetic nanostructured dot as one recorded bit has attracted much interest as a promising candidate for future high-density magnetic recording. In this study, the magnetization reversal behaviors of nanostructured L1₀-FePt, Co/Pt multilayer (ML), and CoPt/Ru dots are investigated. For Co/Pt and CoPt/Ru nanodots, the bi-stable state is maintained in a very wide size range up to several hundred nm, and the magnetization reversal is dominated by the nucleation of a small reversed nucleus with the dimension of domain wall width. On the other hand, the critical size for the bi-stability of L1₀-FePt is about 60 nm, and its magnetization reversal proceeds via domain wall displacement even for such a small dot size. These reversal behaviors, depending on the magnetic materials, might be attributed to the difference in structural inhomogeneity, such as defects. In addition to the magnetic properties, the structural uniformity of the material could be crucial for the BPM application.     

Effect of C layer on the structures and magnetic properties of (0 0 1)-oriented [C/CoPt]n/Ag films

CoPt/Ag and [C/CoPt]n/Ag thin films have been prepared onto the glass substrates by magnetron sputtering. We investigated the evolution of texture and magnetic properties of CoPt/Ag and [C/CoPt]n/Ag films. The results show that C-doping plays an important role in improving (0 0 1) texture, improving the order parameter S, reducing the intergrain interactions, and making the magnetization reversal mechanism more close to Stoner-Wolfarth rotational mechanism. The growth mechanism of (0 0 1) texture also seems to be related strongly to the films thickness. Our results show that the highly (0 0 1)-oriented films with ordered fct phase have a significant potential for the perpendicular media of extremely high-density recording.     

Density of states effective mass of n-type CuInSe2 from the temperature dependence of Hall coefficient in the activation regime

The Hall coefficient R_H of n-type CuInSe₂ single crystals is measured between 10 and 300 K in pulsed magnetic field up to 35 T. The threshold field B_th, above which the magnetic freezeout starts to occur, varies linearly with temperature. From the analysis of the temperature dependence of electron concentration in the activation regime above 100 K at different field values, it is established that the density of states effective mass is independent of the magnetic field B and the activation energy E_D, above around 6 T, varies as B^1/3. Similar B^1/3 dependence of the magnetoresistance in the high magnetic field regime, reported earlier in the same material, suggests that theoretical work that could explain this coincidence is needed.     

Improvement of electrical properties of Sr-modified (Pb,Ca)TiO3 thin films grown by soft chemistry route

Strontium and calcium-modified lead titanate (Pb_0.70Ca_0.15Sr_0.15)TiO₃ soft chemistry-derived thin films were prepared on platinum-coated silicon substrate by spin-coating method. Investigations were made on the structure, surface morphology and electrical properties of the film. The results by XRD and FE-SEM showed that the film exhibits a pure tetragonal perovskite phase and an average grain size of about 50-60 nm, respectively. Electrical measurements of a metal-ferroelectric-metal type capacitor exhibited a stable and switchable electrical polarization in the film. The structure of the Au/PCST/Pt capacitor showed well-saturated hysteresis loops at an applied voltage of 300 kV/cm with remanent polarization and coercive field values of 22 μC/cm² and 100 kV/cm, respectively. At 100 kHz, the dielectric constant and the dielectric loss of the (Pb_0.70Ca_0.15Sr_0.15)TiO₃ thin film with thickness 240 nm were 528 and 0.05, respectively.     

Magnetic properties of CoPt–SiNx/Ag nanocomposite films

When the thickness of Ag under layer is 25 nm, the CoPt/Ag film has maximum out-of-plane squareness (S_⊥), minimum in-plane squareness (S_∥), and the largest out-of-plane coercivity (H_c⊥), they are 0.95, 0.35, and 15 kOe, respectively. Different volume percent of SiN_x ceramic materials were co-sputtered with Co₅₀Pt₅₀ films on the Ag under layer to reduce the grain size of the CoPt film. Comparing the X-ray diffraction pattern of CoPt-SiN_x/Ag films without annealing with that of the films which annealed at 600 and 700 °C, it is found that the intensities of CoPt (0 0 1) and CoPt (0 0 2) superlattice lines were reduced after annealing. As the SiN_x content is raised to 50 vol%, the particle size of CoPt is reduced to be about 9 nm.     

Magnetic properties of field-annealed FeCo thin films

Fe₅₀Co₅₀ thin films with thickness of 30 and 4 nm have been produced by rf sputtering on glass substrates, and their surface has been observed with atomic force microscopy (AFM) and magnetic force microscopy (MFM); MFM images reveal a non-null component of the magnetization perpendicular to the film plane. Selected samples have been annealed in vacuum at temperatures of 300 and 350 °C for times between 20 and 120 min, under a static magnetic field of 100 Oe. DC hysteresis loops have been measured with an alternating gradient force magnetometer (AGFM) along the direction of the field applied during annealing and orthogonally to it. Samples with a thickness of 4 nm display lower coercive fields with respect to the 30 nm thick ones. Longer annealing times affect the development of a harder magnetic phase more oriented off the film plane. The field applied during annealing induces a moderate magnetic anisotropy only on 30 nm thick films.     

Microstructure and magnetic properties of nanocomposite FePt/MgO and FePt/Ag films

An in-plane magnetic anisotropy of FePt film is obtained in the MgO 5 nm/FePt t nm/MgO 5 nm films (where t=5, 10 and 20 nm). Both the in-plane coercivity (H_c∥) and the perpendicular magnetic anisotropy of FePt films are increased when introducing an Ag-capped layer instead of MgO-capped layer. An in-plane coercivity is 3154 Oe for the MgO 5 nm/FePt 10 nm/MgO 5 nm film, and it can be increased to 4846 Oe as a 5 nm Ag-capped layer instead of MgO-capped layer. The transmission electron microscopy (TEM)-energy disperse spectrum (EDS) analysis shows that the Ag mainly distributed at the grain boundary of FePt, that leads the increase of the grain boundary energy, which will enhance coercivity and perpendicular magnetic anisotropy of FePt film.     

Antiferromagnetic transition and electrical conductivity in α-Gd2S3

Magnetic susceptibility and electrical resistivity of α-Gd₂S₃ with an orthorhombic structure (space group: Pnma) have been measured for powder and single-crystal samples. While the magnetic susceptibility of powder sample exhibits a broad peak having a maximum at 4.2 K, the susceptibility for a single crystal with an applied magnetic field along the b-axis demonstrates a sharp drop below 10 K. Nevertheless, the susceptibility with the field perpendicular to the b-axis keeps increasing with decreasing temperature even below 10 K. The electrical resistivity ρ for the powder sample of 4.2×10³ Ω cm around room temperature increases with decreasing temperature and shows a slight discontinuity at about 65 K. In both regions above and below 65 K, is proportional to T^−1/4 with respective coefficients, which is associated with Mott variable-range hopping conductivity. The resistivity of a single crystal along the b-axis is considerably smaller than the value for the powder sample as 0.35 Ω cm at room temperature, and its temperature dependence is fairly weak. While cooling, the resistivity first decreases down to 240 K and then keeps the value independent of the temperature down to 140 K, and subsequently rises gently below 140 K.     

Heat capacity and magnetic phase transitions of rare-earth orthoferrite HoFeO3

Heat capacity of two rare-earth orthoferrites HoFeO₃ and LuFeO₃ were measured between 1.8 and 200 K. A distinctly large and two small heat capacity anomalies were detected for HoFeO₃ under zero magnetic field around 3.3, 53 and 58 K, respectively. The low-temperature anomaly with a peak at 3.3 K is due to the ordering of Ho³⁺ ions and the estimated magnetic entropy for this transition was favorably compared with the expected (R ln 2). Application of magnetic field significantly affects the positions and the magnitudes of the anomaly at 3.3 K. Energies of low-lying levels of the lowest J-term of Ho³⁺ ion were roughly estimated through analysis of the Schottky heat capacity.     

Magnetization reversal dynamics in Au/Co/Au(111) ultrathin films: Effect of roughness of the buffer layer

We present a study of the magnetization reversal dynamics in ultrathin Au/Co/Au films with perpendicular magnetic anisotropy, for a Co thickness of 0.5, 0.7 and 1 nm. In these films, the magnetization reversal is dominated by domain nucleation for t_Co=0.5, 0.7 nm and by domain wall propagation for t_Co=1 nm. The prevalence of domain nucleation for the thickness range 0.5-0.7 nm is different from results reported in the literature, for the same system and for the same thickness range, where the magnetization reversal took place mainly by domain wall motion. We attribute this difference to the effect of roughness of the Au buffer layer on the morphology of the magnetic layer.     

Planar quarter wave stacks prepared from chalcogenide Ge-Se and polymer polystyrene thin films

Planar quarter wave stacks based on amorphous chalcogenide Ge-Se alternating with polymer polystyrene (PS) thin films are reported as Bragg reflectors for near-infrared region. Chalcogenide films were prepared using a thermal evaporation (TE) while polymer films were deposited using a spin-coating technique. The film thicknesses, d∼165 nm for Ge₂₅Se₇₅ (n=2.35) and d∼250 nm for polymer film (n=1.53), were calculated to center the reflection band round 1550 nm, whose wavelengths are used in telecommunication. Optical properties of prepared multilayer stacks were determined in the range 400-2200 nm using spectral ellipsometry, optical transmission and reflection measurements. Total reflection for normal incidence of unpolarized light was observed from 1530 to 1740 nm for 8 Ge-Se+7 PS thin film stacks prepared on silicon wafer. In addition to total reflection of light with normal incidence, the omnidirectional total reflection of TE-polarized light from 8 Ge-Se+7 PS thin film stacks was observed. Reflection band maxima shifted with varying incident angles, i.e., 1420-1680 nm for 45° deflection from the normal and 1300-1630 nm for 70° deflection from the normal.     

Effect of surface chemisorption on the spin reorientation transition in magnetic ultrathin Fe film on Ag(0 0 1)

We have investigated the effect of surface chemisorption on the spin reorientation transitions in magnetic ultrathin Fe films on Ag(0 0 1) by means of the polar and longitudinal magneto-optical Kerr effect (MOKE) and X-ray magnetic circular dichroism (XMCD) measurements. It is found by the MOKE that adsorption of O₂ and NO induces the shift of the critical thickness for the transitions to a thinner side, together with the suppression of the remanent magnetization and the coercive field of the Fe film. This implies destabilization of the perpendicular magnetic anisotropy. On the other hand, H₂ adsorption is found not to change the magnetic anisotropy, though the enhancement of the coercive field is observed. The XMCD reveals that although both the spin and orbital magnetic moments along the surface normal are noticeably reduced upon O₂ and NO adsorption, the reduction of the orbital magnetic moments are more significant. This indicates that the destabilization of the perpendicular magnetic anisotropy upon chemisorption of O₂ and NO originates from the change of the spin-orbit interaction at the surface.     

Characterizations of n-type ferromagnetic GaMnN thin film grown on GaN/Al2O3 (0 0 0 1) by metal-organic chemical vapor deposition

A high-quality ferromagnetic GaMnN (Mn=2.8 at%) film was deposited onto a GaN buffer/Al₂O₃(0 0 0 1) at 885 °C using the metal-organic chemical vapor deposition (MOCVD) process. The GaMnN film shows a highly c-axis-oriented hexagonal wurtzite structure, implying that Mn doping into GaN does not influence the crystallinity of the film. No Mn-related secondary phases were found in the GaMnN film by means of a high-flux X-ray diffraction analysis. The composition profiles of Ga, Mn, and N maintain nearly constant levels in depth profiles of the GaMnN film. The binding energy peak of the Mn 2p_3/2 orbital was observed at 642.3 eV corresponding to the Mn (III) oxidation state of MnN. The presence of metallic Mn clusters (binding energy: 640.9 eV) in the GaMnN film was excluded. A broad yellow emission around 2.2 eV as well as a relatively weak near-band-edge emission at 3.39 eV was observed in a Mn-doped GaN film, while the undoped GaN film only shows a near-band-edge emission at 3.37 eV. The Mn-doped GaN film showed n-type semiconducting characteristics; the electron carrier concentration was 1.2×10²¹/cm³ and the resistivity was 3.9×10⁻³ Ω cm. Ferromagnetic hysteresis loops were observed at 300 K with a magnetic field parallel and perpendicular to the ab plane. The zero-field-cooled and field-cooled curves at temperatures ranging from 10 to 350 K strongly indicate that the GaMnN film is ferromagnetic at least up to 350 K. A coercive field of 250 Oe and effective magnetic moment of 0.0003 μ_B/Mn were obtained. The n-type semiconducting behavior plays a role in inducing ferromagnetism in the GaMnN film, and the observed ferromagnetism is appropriately explained by a double exchange mechanism.     

Magnetic anisotropy in (, .44, .55, .67, and .78) alloy film grown on and MgO(001) by molecular beam epitaxy

Fe_xPd_1−x (x=.30, .44, .55, .67, and .78) films were directly grown on SrTiO₃(001) and MgO(001) by molecular beam epitaxy at 500 C. The thickness of all films is 50 nm. X-ray diffraction shows epitaxial quality and face-center- tetragonal (00l), (002), and (003) peaks indicating an FePd L1₀ order state for films of x=.30, .44 and .55. X-ray diffraction only shows (002) peaks with a relatively weak intensity for the film of x=.67 and no (00l) peak is observed, but a broad body-center-cubic Fe(002) is identified for the film of x=.78. Magnetic hysteresis curves are carried out by a vibrating sample magnetometer (VSM) with an applied field within 12 kOe. Magnetization of both in-plane and perpendicular-to- the-plane measurements show a linear increase of the magnetization saturation from 560 emu/cm³ to 1250 emu/cm³ as x increasing from .30 to .78. For the results of the in-plane measurements, remanence (M_r), however, shows a minimum while the anisotropy field (H_k) shows a maximum for the film with x=.44 indicating the optimal content ratio of Fe/Pd for perpendicular anisotropy in the present alloy films. Further, negative remanence is observed in the hysteresis curves where the field is perpendicular to the film of x=.78 This may indicate that the L1₀order state still affects the magnetic anisotropy for high Fe content films even though the film has a body-center-cubic structure.