Goos-Hänchen and Imbert-Fedorov shifts in tilted Weyl semimetals

We establish the beam models of Goos-Hänchen (GH) and Imbert-Fedorov (IF) effects in tilted Weyl semimetals (WSMs), and systematically study the influences of Weyl cone tilting and chemical potential on the GH and IF shifts at a certain photon energy 1.96 eV. It is found that the GH and IF shifts in tilted type-I and type-Ⅱ WSMs are both almost symmetric about the Weyl cone tilting. Meanwhile, the GH and IF shifts in type-I WSMs almost do not change with the tilt degree of Weyl cones, while those in type-Ⅱ WSMs are extremely dependent on tilt degree. These trends are mainly due to the nearly symmetric distribution of WSMs conductivities, where the conductivities keep stable in type-I WSMs and gradually decrease with tilt degree in type-Ⅱ WSMs. By adjusting the chemical potential, the boundary between type-I and type-Ⅱ WSMs widens, and the dependence of the beam shifts on the tilt degree can be manipulated. Furthermore, by extending the relevant discussions to a wider frequency band, the peak fluctuation of GH shifts and the decrease of IF shifts occur gradually as the frequency increases, and the performance of beam shifts at photon energy 1.96 eV is equally suitable for other photon frequencies. The above findings provide a new reference for revisiting the beam shifts in tilted WSMs and determining the types of WSMs.     

Investigation of the limit of lateral beam shifts on a symmetrical metal-cladding waveguide

This paper reports that Goos--H\"anchen (GH) shifts occurring on a symmetrical metal-cladding waveguide are experimentally identified. It was found that there exists a critical thickness of the upper metal layer, h_cr, above which negative shift is observed and, reversely, positive shift occurs. Both positive and negative GH shifts near the critical thickness do not vary dramatically and can achieve a maximum on the submillimeter scale, which is different from simulated results using the stationary-phase method. It also shows that this critical thickness, h_cr, can be obtained at the position for zero reflectivity by setting the intrinsic damping to be the same as the radiative damping. The GH effects observed near the critical thickness are produced by extreme distortion of the reflected beam profiles, which limits the amplitude of the GH shift and, further, the sensitivity of the GH optical sensor based on the symmetrical metal-cladding waveguide.     

Method of measuring one-dimensional photonic crystal period-structure-film thickness based on Bloch surface wave enhanced Goos-Hänchen shift

This paper puts forward a novel method of measuring the thin period-structure-film thickness based on the Bloch surface wave (BSW) enhanced Goos-Hänchen (GH) shift in one-dimensional photonic crystal (1DPC). The BSW phenomenon appearing in 1DPC enhances the GH shift generated in the attenuated total internal reflection structure. The GH shift is closely related to the thickness of the film which is composed of layer-structure of 1DPC. The GH shifts under multiple different incident light conditions will be obtained by varying the wavelength and angle of the measured light, and the thickness distribution of the entire structure of 1DPC is calculated by the particle swarm optimization (PSO) algorithm. The relationship between the structure of a 1DPC film composed of TiO₂ and SiO₂ layers and the GH shift, is investigated. Under the specific photonic crystal structure and incident conditions, a giant GH shift, 5.1×10³ times the wavelength of incidence, can be obtained theoretically. Simulation and calculation results show that the thickness of termination layer and periodic structure bilayer of 1DPC film with 0.1-nm resolution can be obtained by measuring the GH shifts. The exact structure of a 1DPC film is innovatively measured by the BSW-enhanced GH shift.     

Imbert–Fedorov shifts of a Gaussian beam reflected from uniaxially anisotropic chiral media

We study the Imbert–Fedorov (IF) shifts of a reflected Gaussian beam from uniaxially anisotropic chiral media (UACM), where the chirality appears only in one direction and the host medium is a uniaxial crystal or an electric plasma. The numerical results are presented for three kinds of UACM, respectively. It is found that the IF shifts are closely related to the propagation properties of the two eigenwaves in the UACM. In general, when either of the eigenwaves is totally reflected, the IF shifts can change abruptly near the critical angle. The cross-polarized reflection coefficient has a greater effect on the spatial IF (SIF) shift than on the angular IF (AIF) shift, and the sign of the AIF shift depends mainly on that of the difference between the co-polarized reflectivity. By designing artificially the electromagnetic parameters of the UACM, we can control the IF shifts and acquire their more abundant properties.     

双棱镜结构中透射光束的古斯-汉欣位移

当入射角大于全反射临界角时,双棱镜结构中透射和反射光束的古斯-汉欣(Goos-Haenchen)位移具有饱和效应,并且只有波长数量级。利用稳态相位法研究了当入射角小于全反射临界角时双棱镜结构中透射光束的古斯-汉欣位移。研究表明,传播模式下透射光束的古斯-汉欣位移是空气层厚度、入射角和双棱镜折射率的周期性函数。当透射共振时,透射光束的古斯-汉欣位移可达入射波长的几十倍,与入射角大于全反射临界角的情况相比,透射光束的位移通过边界的相互作用具有共振增强效应;在非共振点处,对称结构中的反射光束具有与透射光束相同的古斯-汉欣位移。共振增强的透射光束的位移在光开关及光耦合器中具有潜在的应用。     

左手材料复合双棱镜内部界面的古斯-汉森位移

设计了一种左手材料复合双棱镜,由两块各向同性左手材料棱镜与夹在其间的、其界面与光轴成一定的角度的单轴各向异性左手材料平板构成.研究了发生在其内部界面上的古斯-汉森位移.分析了发生折射的条件和古斯-汉森位移的符号.研究发现,反射波与透射波有相同的古斯-汉森位移,透射波的古斯-汉森位移随着薄层厚度的增加而振荡,整体上呈增加趋势;在透射共振点,透射波的古斯-汉森位移达到极大值,且极大值可达入射波波长的数十倍;发现入射角和光轴与界面的角度对透射波的古斯-汉森位移有很大影响.最后简单地探讨了这种双棱镜的潜在应用.     

Resonant tunneling and enhanced Goos–Hänchen shift in a graphene double velocity barrier structure

Resonant transmission and Goos–Hänchen (GH) shift for Dirac fermion beams tunneling through graphene double velocity barrier structures (DVBs) are investigated theoretically. Analytical and numerical results demonstrate that strong resonant tunneling effect occurs in this structure and is highly dependent on the incident angle and the structure of velocity barriers. The resonant tunneling in graphene DVBs belongs to the Fabry–Pérot resonance and leads to oscillated conduction at wide energy range. It is also found that GH shifts in this structure can be enhanced by the resonant tunneling and multi-GH shift peaks with giant magnitudes can occur at these resonant energy positions. These special properties of GH shifts in graphene DVBs may have good application in lateral manipulation of electron beams and valley or spin beam splitter.     

Net lateral shift of reflected beam due to surface plasmon resonance in Kretschmann configuration

When surface plasmon resonance is excited in Kretschmann configuration, the maximum Goos–Hänchen shift occurs at the resonant angle which is associated with the minimum value of reflectivity, but the maximum angular shift occurs at two incident angles beside the resonant angle. When the reflected beam is detected at Rayleigh range, the maximum net lateral shift of the reflected beam does not encounter the resonant angle and its magnitude is lager than that of Goos–Hänchen shift. Numerical simulation shows that theory agrees well with numerical results when the beam width is large enough.     

Large negative Goos-H(a)nchen shift from a wedge-shaped thin film

The analytical expression for the complex amplitude of light reflected from a wedge-shaped thin film is derived.For plane wave incidence,a simple ray tracing approach is used to calculate Goos-H(a)nchen(GH)shifts;and for non-plane wave incidence,for example,a Gaussian beam,the angular spectrum approach of plane wave is used in simulation.The two approaches predict that a wedge-shaped thin film can produce large negative longitudinal GH shifts.Although the reflectivity is small near the condition of resonance,the large negative GH shifts can be more easily detected in comparison with the shift from a plane-paxallel film in vacuum.     

Anisotropic and valley-resolved beam-splitter based on a tilted Dirac system

We investigate theoretically valley-resolved lateral shift of electrons traversing an n–p–n junction bulit on a typical tilted Dirac system (8-Pmmn borophene). A gauge-invariant formula on Goos–Hänchen (GH) shift of transmitted beams is derived, which holds for any anisotropic isoenergy surface. The tilt term brings valley dependence of relative position between the isoenergy surface in n region and that in the p region. Consequently, valley double refraction can occur at the n–p interface. The exiting positions of two valley-polarized beams depend on the incident angle and energy of incident beam and barrier parameters. Their spatial distance D can be enhanced to be ten to a hundred times larger than the barrier width. Due to tilting-induced high anisotropy of the isoenergy surface, D depends strongly on the barrier orientation. It is always zero when the junction is along the tilt direction of Dirac cones. Thus GH effect of transmitted beams in tilted Dirac systems can be utilized to design anisotropic and valley-resolved beam-splitter.     

Focal shift of cylindrical vector axisymmetric Bessel-modulated Gaussian beam with radial variance phase wavefront

Axisymmetric Bessel-modulated Gaussian beam with quadratic radial dependence (QBG beam) has attracted much attention recently. In this paper, the focal shift of the cylindrical vector QBG beam with radial variance phase wavefront is investigated theoretically by vector diffraction theory. Results show that focus shifts considerably by changing the phase parameter C that indicates the radial phase variance speed. Under condition of small beam parameter μ of cylindrical vector QBG beam, there is one focal peak that shifts far away from optical aperture on increasing C. When μ increases, there may occur two focal peaks that also shift remarkably on increasing C. And it was found that the dependence of focal shift distance on increasing phase parameter is linear. Phase parameter adjusts the focal shift distance, while, polarization angle does not affect focal shift obviously.     

Coherent Control of the Goos-Hänchen Shifts in a Four-Level N Type Atomic Medium

The behavior of the Goos-Hänchen (GH) shifts of the reflected and transmitted probe light beams is theoretically investigated. In a fixed geometrical configuration, the effect of quantum interference induced by spontaneous emission on the phase control of the GH shifts is analyzed in this paper. It is found that in a four-level N-type atomic system as an intracavity medium, the GH shifts of the reflected and transmitted probe light beam are completely phase dependent.     

近零介电常数区超导薄层的Goos-H?nchen位移

Goos-H?nchen(GH)位移是一种特殊的光学现象,具有广泛的应用.构造材料光学性质的差异对同一结构的GH位移有很大影响.在近零介电常数区,本文比较研究了不同偏振态的光波入射到超导薄层上的GH位移.当以大于临界角的入射角入射时,s偏振光的GH位移始终保持为正值,而p偏振光的GH位移的正负与超导材料的介电常数为零时的波长相关联.当入射光波长大于该波长时,GH位移会出现负值.相关参数对不同偏振态下的GH位移的影响存在较大差异.相对于p偏振光,GH位移在s偏振光入射时随相关参数的变化规律较为简单.超导材料在光子学领域具有广泛的应用,计算结果为基于超导材料的新型光子学器件研究开发提供了参考.     

Implications of spectral hole burning on the manipulation of spatial Goos–Hänchen shift in an atomic cell

We present a new scheme to report on Goos–Hänchen (GH) shift experienced by the Gaussian light beam interacting with an optical cavity filled with four-level sodium atomic medium in the spectral hole burning region with and without Doppler broadening effect. Theoretical atomic density-matrix formalism is employed to obtain the susceptibility of atomic medium while the stationary-phase-theory is used to compute the GH shift in the reflected and transmitted probe beams subjected to control fields. A steep normal slope of dispersion is observed with a maximum and zero probability of transmission and reflection coefficients, respectively, at the regions of the spectral holes burning. In the normal dispersion spectrum at the region of spectral hole burning, positive and negative GH shift is observed, respectively, in the transmitted and reflected light beams. However, at anomalous dispersive regions negative GH shift in the transmission beam and positive GH shift in the reflection beam is observed. The reflection and transmission coefficients as well as the spatial GH shift are the functions of probe detuning, collective phase of control fields, beam incident angle and inverse Doppler broadening effect in the spectral hole burning region. The position and number of spectral holes also depend on the same spectral parametrs as stated above. The study is expected to be useful for optoelectronic devices and optical-clocking applications.     

Role of spatial coherence in Goos-Hänchen and Imbert-Fedorov shifts

We present a theory for Goos-H?nchen (GH) and Imbert-Fedorov (IF) shifts for beams of light with arbitrary spatial coherence. By applying the well-known theory of partial spatial coherence, we can calculate explicitly spatial and angular GH and IF shifts for completely polarized beams of any shape and spatial coherence. For the specific case of a Gauss-Schell source, we find that only the angular part of GH and IF shifts is affected by the spatial coherence of the beam. A physical explanation of our results is given.     

砷化镓光电阴极光谱响应与吸收率关系分析

为了研究砷化镓(GaAs)光电阴极光谱响应与吸收率曲线间的关系,采用分子束外延法(MBE)和金属有机化合物化学气相沉积法(MOCVD)制备了两类GaAs光电阴极,并测试得到了样品吸收率和光谱响应实验曲线.对每个样品的这两条曲线在同一坐标系中做最大值归一化处理,将归一的光谱响应曲线与归一的吸收率曲线做除法,得到了类似光电阴极表面势垒的形状.结果表明,两种方法制备的光电阴极光谱响应曲线相比吸收率曲线都发生了红移,MBE样品偏移量稍大于MOCVD样品.短波吸收率不截止,光谱响应截止于500 nm左右;可见光波段上,光谱响应曲线的峰值位置相比吸收率曲线红移了几百meV;近红外区域,光谱响应曲线的截止位置相比吸收率曲线红移了几个meV.MOCVD样品中杂质对带隙的影响更小,光谱响应相比吸收率发生的能量偏移更小.这些结论对提高GaAs光电阴极光电发射性能有指导意义.     

Goos-Hänchen and Imbert-Fedorov shifts of a nondiffracting Bessel beam

Goos-H?nchen (GH) and Imbert-Fedorov (IF) shifts are diffractive corrections to geometric optics that have been extensively studied for a Gaussian beam that is reflected or transmitted by a dielectric interface. Propagating in free space before and after reflection or transmission, such a Gaussian beam spreads due to diffraction. We address here the question of how the GH and IF shifts behave for a "nondiffracting" Bessel beam.     

Zero,positive and negative quantum Goos–Hänchen shifts in graphene barrier with vertical magnetic field

We have explored the zero, positive and negative quantum Goos–Hänchen (GH) shifts of the transmitted Dirac carriers in graphene through a potential barrier with vertical magnetic field. Numerical results show that only one energy position at the zero GH shift exists and is highly dependent on the y-directional wave vector, the energy gap, the magnetic field and the potential. The positive and negative GH shifts happen when the incident energy is more and less than the energy position at the zero GH shift, respectively. In addition, we found that there are two values of potential at the zero GH shifts, where a potential window can always keep the positive GH shifts. These results may be useful in designing a graphene-based valley or spin splitter as well as manipulating the electrons and holes in graphene nanostructure.     

Focal shift of radially polarized axisymmetric Bessel modulated Gaussian beam with radial variance phase plate

Focal shift of the radially polarized axisymmetric QBG beam with radial variance phase plate is investigated theoretically by vector diffraction theory. Axisymmetric Bessel modulated Gaussian beam with quadratic radial dependence (QBG beam) has attracted much attention recently. Calculation results show that focus shifts considerably by changing the phase parameter C that indicates the radial phase variance speed. Under condition of beam parameter μ of radially polarized axisymmetric QBG beam, there is one focal spot that shifts far away from optical aperture on increasing C. When increases the value of beam parameter, there may occur two focal peaks that also shift remarkably on increasing C.     

嵌入式三色光变器

为了提升现有导模共振防伪光变器件的性能,设计了一种基于ZnS覆盖膜的一维单周期矩形结构三色光变器.当自然光入射角为45°时,可在0°,58°,90°方位角分别获得相应的蓝、绿、红三色反射峰,对研究结果进行了物理解释.分析并提出了该器件周期、槽深、膜厚以及入射角变化对反射峰的影响规律,对器件的设计、制作和测试有重要指导作用.三色光变器基于简单结构实现方位角调节的自然光三色光变效果,可运用传统激光全息产业的模压和蒸镀工艺进行制作,在光变图像防伪领域有重要应用.