Electrical resistivity of microinhomogeneous PdMnxFe1−x alloys

The electronic band-structure calculations of the PdFe ferromagnet and the PdMn antiferromagnet performed in this work permit one to conclude that the specific features of the electrical resistivity observed in the ternary PdMn_xFe_1−x alloy system [the deviation from the Nordheim-Kurnakov rule ρ₀(x)∼x(1−x), which is accompanied by a high maximum of residual resistivity (not typical of metals) ρ ₀ ^m ∼220 μΩ cm at x _C∼0.8 and a negative temperature resistivity coefficient in the interval 0.5≤x≤1] are due to the microinhomogeneous (multiphase) state of the alloys and a variation in the band-gap parameter d spectrum caused by antiferromagnetic ordering of a PdMn-type phase. __________ Translated from Fizika Tverdogo Tela, Vol. 44, No. 2, 2002, pp. 193–197. Original Russian Text Copyright ? 2002 by Kourov, Korotin, Volkova.     

Local-moment formation and metal-nonmetal transition in Ca1−x Y x VO3 and Ca1−x Y x TiO3

Electron-doped metallic states of Ca_1−x Y _x VO₃ and Ca_1−x Y _x TiO₃ change into non-metallic states around x∼0.4 and 0.6, respectively. The residual resistivity in the metallic states increases with increasing effective magnetic moment or coefficient of T ² term of resistivity. The effective moment reaches ∼ 0.5 μ_B/molecule in Ca_1−x Y _x VO₃ and also in Ca_1−x Y _x TiO₃ near the metal-nonmetal phase boundary. In these metallic states. ∼ 10% of 3d atoms seem to have large localized magnetic moments. In electron-doped metallic sample of Ca_1−x Y _x VO₃, the temperature dependence of resistance shows no resistance-minimum. However, weak negative magneto-resistance is observed for the sample with x=0.2 up to 50 Tesla at 4.2 K.     

Magnetic and electrical properties of Mg1−x CuxO solid solutions and magnetic shielding in Cu-Mg1−x CuxO structures

Mg_1−x Cu_xO solid solutions having an NaCl structure with 0⩽x⩽0.20 are synthesized and Cu-Mg_1−x Cu_xO structures are prepared for superconductivity studies. The magnetic susceptibility χ, electron paramagnetic resonance (EPR), and electrical conductivity of the solid solutions are studied at temperatures of 5–550 K. It is shown that χ ⁻¹(T) obeys the Curie-Weiss law with a paramagnetic Curie temperature Θ close to zero and an effective magnetic moment μ _eff=1.9 μ _B, close to the 1.73 μ _B of a Cu²⁺ ion with spin S=1/2. The width ΔH of the EPR line depends weakly on temperature and increases as x is raised. The volume narrowing of the EPR linewidth ΔH is used to estimate the exchange interaction parameter, 3×10⁻⁴ eV. The g-factor is close to 2 and is temperature independent. The electrical conductivity of Mg_1−x Cu_xO at T=300 K is ≈10⁻¹¹–10⁻¹² Ω⁻¹ cm⁻¹ for x=0 and increases to 10⁻⁵–10⁻⁶ Ω⁻¹ cm⁻¹ for x=0.15–0.20. The conductivity is p-type. Magnetic shielding is observed in Cu-Mg_1−x Cu_xO structures with x=0.15 and 0.20. The possible connection of this phenomenon with interference superconductivity in the contact layer of the structure is discussed. Fiz. Tverd. Tela (St. Petersburg) 41, 293–296 (February 1999)     

Measurement of the differential and integral distribution of diffuse x-ray scattering intensity from defects in thin strained layers

Double-and triple-crystal diffractometry have been used to study structural perfection of a ∼1 μm-thick Ga_1−x In_xSb_1−y As_y epitaxial film (x=0.9, y=0.8) on GaSb. It is shown that scattering from samples of this system can be divided into coherent and diffuse. The arrangement of reciprocal-lattice points of the film and substrate in the two-dimensional intensity distribution for asymmetrical reflections argues for the absence of elastic-strain relaxation. No dislocation networks are formed, and the diffuse scattering is produced by Coulomb-type defects. Localization of diffuse scattering in reciprocal space suggests that these defects reside in the epitaxial film. The diffuse-scattering distribution in asymmetrical reflections is shown to be anomalous; namely, it extends in a direction parallel to the surface and is split into two maxima. Schemes have been proposed and realized for measuring integral distributions of diffracted intensity along the surface and perpendicular to it, and their potential for studying diffuse scattering from defects is explored. Fiz. Tverd. Tela (St. Petersburg) 39, 1188–1193 (July 1997)     

Thermal and Auger processes in p-n junctions based on GaInAs/InAs and InAsSbP/InAs heterostructures

A study is made of the excess-energy relaxation processes and the mechanisms responsible for overheating of the active zone of infrared emitters made from nonisoperiodic structures with stressed InGaAs layers and from nearly isoperiodic InAsSbP structures and emitting in the wavelength range λ=2.5–5.0 μm are investigated. The relationship between the overheat ΔT of the active zone of the structure and Auger processes is established for In_1−x Ga_xAs infrared emitters. It is shown that the efficiency of Auger recombination decreases as x increases in the interval 0–0.09, promoting a sharp reduction in ΔT. At x>0.09 the efficiency of CHHS Auger processes decreases exponentially, but an increase in the density of dislocations due to the appreciable value (∼6.9%) of the lattice mismatch parameter causes ΔT to increase, but slowly. Zh. Tekh. Fiz. 67, 68–71 (September 1997) Deceased.     

A method based on magnetic moment measurement to identify the structural transition of quenched Fe1 -xGax (x = 0.15ben 0.30) alloys

A method based on the measurement of Fe average atomic magnetic moment to identify the structural transition caused by the increase of Ga content in quenched Fe_{1 - x}Ga_x alloys (0.15 ≤ x ≤ 0.30) is proposed. The quenched Fe_{1 - x}Ga_x alloys show a change of the Fe average atomic magnetic moment from 2.25 μ_B to 1.78 μ_B and then to 1.58 μ_B, which corresponds to the structural transition from A2 to D0₃ and then to B2. The relationship between the structure and the magnetostriction is clarified, and the maximum magnetostriction appears in the A2 phase. The variation tendency of the magnetostriction is well characterized, which also reflects the structural transition.     

Magnetoelectric effect and toroidal ordering in Ga2−x FexO3

The field dependence of the magnetoelectric effect and longitudinal magnetostriction of Ga_2−x Fe_xO₃ single crystals is studied in magnetic fields up to 200 kOe in the temperature range from 4.2 to 300 K. It is shown that the magnetoelectric effect in these materials is determined mainly by the toroidal moment T and is not related to magnetostriction, as was previously theorized. A new method for determining the toroidal moment by measuring the electric polarization in a strong magnetic field is proposed. The value of the toroidal moment of the unit cell in Ga_1.15Fe_0.85O₃ is calculated: T=(T _a ,0,0), where T _a =24.155μ _B Å per unit cell. Experimental data are analyzed using a theory of toroidal spin ordering, which gives good agreement with experiment. Zh. éksp. Teor. Fiz. 114, 263–272 (July 1998) Deceased.     

The dynamics of accumulation of electrically active radiation defects on implantation of graded-band-gap HgCdTe films grown by MBE

The dynamics of accumulation of electrically active radiation defects under ion doping of epitaxial Cd _x Hg _1−x Te films is studied for various distributions of film composition in the implantation region. The epitaxial films were irradiated by boron ions at room temperature in the continuous regime, with the dose ranging within 10¹¹−3·10¹⁵ cm⁻², energy — 20–150 keV, and ion current density — j = 0.001–0.2 μA·cm⁻². It is found that the natural logarithm of the introduction rate of electrically active radiation defects linearly depends on the epitaxial-film composition in the range of mean projected path of implanted ions. An analysis of the experimental data shows that the dynamics of accumulation of electrically active radiation defects is determined by the epitaxial-film composition in the implantation region. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 25–28, September, 2006.     

Model of current and optical conductivity switching in YBa2Cu3O7−x films

A model is proposed for the thermal and electrical responses of films of the high-T _c superconducting material YBa₂Cu₃O7_7−x to current and optical pulses. Numerical calculations are compared with experimental data for current pulses of duration 100 μs and laser pulses of duration 0.1 ns; this yields improved data on the thermal conductivity of thin YBa₂Cu₃O7_7−x films (1.5–2 W/m·K) and thermal resistance of the film-substrate contact (5×10⁻⁸m²·K/W) in the neighborhood of the superconducting transition. This model can be used for optimizing the film structure parameters and control regimes for switching elements for pulses lasting longer than 0.1 ns. Zh. Tekh. Fiz. 69, 77–82 (October 1999)     

Up-conversion and population of excited erbium levels in LiY1−x ErxF4 (x=0.003–1) crystals under CW InGaAs laser-diode pumping

Formation of the inverse population of working levels of 3-μm laser transition in LiY_1−x Er_xF₄ (x=0.003–1) crystals under CW InGaAs laser-diode pumping (0.967–0.982 μm) was investigated. Dependences of population of the ⁴ I _11/2 and ⁴ I _13/2 levels on the dopant concentration and pump power were studied theoretically and experimentally. Relative changes in populations of the studied levels were experimentally monitored by measuring the steady-state spectra of IR crystal luminescence in the wavelength range corresponding to ⁴ I _11/2→⁴ I _13/2 (2.7–2.8 μm), ⁴ I _11/2→⁴ I _15/2 (0.96–1.04 μm), and ⁴ I _13/2→⁴ I _15/2 (1.45–1.65 μm) transitions. Theoretical and experimental estimates of the rates of intracenter and intercenter relaxation processes (migration, self-quenching, and up-conversion) with allowance for statistics of coupling of impurity centers in the system were used to determine the energy-transfer mechanisms, elucidate the predominant mechanisms, and obtain microparameters and concentration dependences of the energy-transfer rates and nonlinear coupling. Dependences of the steady-state population of the levels of laser transition ⁴ I _11/2→⁴ I _13/2 on the dopant concentration and pumping power density were calculated within the context of rate balance equations for the scheme with the five lowest excited states of erbium. Good agreement between theory and experiment was obtained. __________ Translated from Optika i Spektroskopiya, Vol. 92, No. 1, 2002, pp. 73–88. Original Russian Text Copyright ? 2002 by Tkachuk, Razumova, Mirzaeva, Malyshev, Gapontsev.     

An anomaly in the magnetic susceptibility of the Mg1−x CuxO solid solutions with 0.01≤x≤0.20

The problem of localized superconductivity has motivated the preparation of Mg_1−x Cu_xO solid solutions with NaCl structure and 0.01≤x≤0.20, as well as a study of the magnetization and magnetic susceptibility χ in the 2–400 K temperature range and in magnetic fields of up to 5 T. The temperature dependence of χ is described for all compositions by the Curie-Weiss law, χ = C/(T − θ), where the constant C is close to the value calculated for each composition for μ_eff = 1.7–1.9μ_B, and θ is close to zero. For T < 30 K, χ(T) deviates for all compositions toward lower χ, which can be attributed to magnetic ordering of exchange-coupled clusters in the solid solution. At T∼320–330 K, an anomaly of a diamagnetic type, i.e., a decrease of χ by 6–30% of its paramagnetic value, has been observed for all compositions against the background of the generally paramagnetic χ(T). A discussion is presented of alternative reasons for this anomaly and of its possible connection with localized superconductivity. __________ Translated from Fizika Tverdogo Tela, Vol. 42, No. 4, 2000, pp. 701–703. Original Russian Text Copyright ? 2000 by Samokhvalov, Arbuzova, Viglin, Naumov, Smolyak, Korolev, Lobachevskaya.     

Anisotropy of electrical properties of lead doped extruded samples of Bi85Sb15

Thin films of Bi₈₅Sb₁₅ solid solution wich can be used in thermoelectric devices for cooling and stabilizing the temperature of Gann and Impatt diodes have been obtained by extrusion method. They have surface roughness in the range 10–80μm, dielectric lossestan δ ∼ 10⁻³ at 10 GHz, thermal conductivityβ ∼ 4x10² W / (M · K). Anisotropy of electroconductivityσ, thermoelectric powerα and Hall coefficientsR _H of lead doped extruded Bi₈₅Sb₁₅ samples has been investigated in the temperature range between 77 K and 300 K and in the presence of magnetic fieldH up to ∼ 74×10⁴ A/m. It is shown that the value and sign of the anisotropy coefficient essentially depend on heat treatment and impurity concentration. Experimental results are explained taking into account a crystal structure of Bi₈₅Sb₁₅, formation of texture and generation of deformation defects.     

Piezobirefringence in γ1-(GaxIn1−x )2Se3 single crystals

The piezobirefringence of uniaxial γ₁-(Ga_xIn_1−x )₂Se₃ crystals (x=0.3, 0.4) was investigated in the spectral range 0.6–1.1 μm at temperatures from 77 to 295 K. It is shown that uniaxial compression leads to a linear decrease in the birefringence, whereas a decrease in temperature reduces the effect of piezobirefringence. The baric changes in the birefringence are attributed to the baric changes in the contribution of the edge transitions to the total birefringence. __________ Translated from Optika i Spektroskopiya, Vol. 95, No. 3, 2003, pp. 458–461. Original Russian Text Copyright ? 2003 by Studenyak, Kran’chets, Suslikov, Kovach.     

Autosolitons in electron-hole plasma in p-Ge

The self-organization of an electron-hole plasma (EHP) heated by an electric field in pure p-Ge samples at T = 77 K has been studied experimentally. The derived current-voltage characteristics (CVCs) and the distributions of the electric field and IR emission of the hot carriers along the samples show that the segments of a steep rise or the S-shaped segments of the CVCs in samples with n-p junctions are related to the formation of longitudinal thermal-diffusion autosolitons (AS_‖); as a result, thin (d = 2–20 μm in diameter), melted-through current channels appear. Such AS_‖ are formed at high EHP densities (n ≥ 1 × 10¹⁶ cm⁻³), when the electron-hole scattering is dominant, and at electron temperatures T _e = (2–4.5)T ₀ (T ₀ is the lattice temperature). The saturation segments and the N-shaped segments in the CVCs are attributable to the generation of transverse thermal-diffusion high-field autosolitons (AS_⊥) in the form of narrow strata with electric field strengths = 1–20 kV cm⁻¹. High-field AS_⊥ are formed at EHP densities n = 5 × 10¹³−1 × 10¹⁶ cm⁻³, when the electron-phonon scattering is dominant, and at electron temperatures T _e ∼ Θ ≥ 5T ₀ (Θ is the Debye temperature). The generated longitudinal and transverse autosolitons have high temperatures (T _e ≥ 1000 K) and reduced carrier densities and can exist simultaneously in different parts of the sample. Original Russian Text ? M.N. Vinoslavskiĭ, P.A. Belevskii, A.V. Kravchenko, 2006, published in Zhurnal éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2006, Vol. 129, No. 3, pp. 477–492.     

Scalar-leptoquark contributions to the neutrino magnetic moment

On the basis of astrophysical data on the neutrino magnetic moment, μ _ν < 3 × 10⁻¹² μ _B , constraints on the scalar-leptoquark masses are found within the minimal model involving four-color symmetry. It is shown that data on the neutrino magnetic moment are compatible with the mixing-parameter range that admits the existence of scalar leptoquarks whose masses are below 1 TeV, reaching experimental limits obtained from direct searches. In the case of mass degeneracy for the scalar leptoquarks S _m of electric charge Q = 2/3, the constraint m _{S m} > 330 GeV is obtained, which is independent of the mixing parameters of the model. The results are compared with the predictions of other leptoquark models. Original Russian Text ? A.V. Povarov, 2007, published in Yadernaya Fizika, 2007, Vol. 70, No. 5, pp. 905–911.     

Study of the thermal properties of Ba1−x SrxTiO3 thin films by the ac hot-probe method

The heat capacity and heat conductivity of Ba_1−x Sr_xTiO₃ (x=0.2, 0.5, 0.8) polycrystalline films 1.5–2.0 μm thick on a massive substrate have been studied by the ac hot-probe method for three-layer systems (conducting probe-dielectric film-substrate) at temperatures ranging from 100 to 400 K. It is found that the thermal properties exhibit anomalies in the phase transition range. __________ Translated from Fizika Tverdogo Tela, Vol. 42, No. 10, 2000, pp. 1839–1841. Original Russian Text Copyright ? 2000 by Davitadze, Kravchun, Strukov, Taraskin, Gol’tsman, Lemanov, Shul’man.     

Width of the ferromagnetic resonance line in highly dispersed powders of crystalline and amorphous Co-P alloys

The resonance characteristics (inhomogeneous FMR linewidth ΔH) in highly dispersed (d=0.1–3 μm) powders of crystalline and amorphous Co-P alloys are investigated as a function of the composition, particle size, and atomic structure. It is established that ΔH for powders of amorphous Co-P alloys is two to three times larger than ΔH for crystalline Co-P powders. According to the investigations performed, this is caused by thermodynamically stimulated segregation of nonmagnetic Co₂P inclusions, apparently an effective relaxation channel, in the amorphous state of Co-P powders. Fiz. Tverd. Tela (St. Petersburg) 41, 464–467 (March 1999)     

In searches for daemons

A possibility is considered of detecting Planckian particles carrying an electric charge Z≈10 and supposedly forming the dark matter of the Galactic disk, whence they are captured by combined action of the Sun and the Earth into strongly elongated Earth-crossing orbits. The flux of such dark electric matter objects, daemons, at the Earth’s orbit may reach f _⊕≈3×10⁻⁷cm⁻²s⁻¹ at a velocity about 52 km/s. Negatively charged daemons are capable of catalyzing the fusion of light (Z _n<10) nuclei. The rate of capture (and fusion) of nuclei should be particularly high in a metallic phase. A detection system is described that consists of beryllium plates 45 mm thick and 1200 cm² in area coated with a ZnS(Ag) scintillator. It is assumed that the products of the fusion reaction 2⁹Be → ¹⁸O that are ejected in amounts of up to about 10⁴ from the points of daemon entrance and exit would give rise to scintillations with a delay of about 1μs. An exposure of the system for 300 h revealed no event. The reason for the negative result can be (1) too optimistic an estimate of the flux (the inclusion of some factors could lower it by 1.5–3 orders of magnitude) and (2) the poisoning of the catalyst by capture of nuclei with Z _n≥10. The time required for the recovery of the daemon catalytic properties is estimated from the analysis of the energy release in the Sun at no less than 3×10⁻⁷ s. The analysis of the total available data suggests that the daemon flux at the Earth is about 3×10⁻⁸ cm⁻² s⁻¹. The experiments will be continued. From Yadernaya Fizika, Vol. 63, No. 6, 2000, pp. 1112–1117. Original English Text Copyright ? 2000 by Drobyshevski. This article was submitted by the author in English.     

Lithium ion conductivity of the B-site substitution in Li3xLa0.67−xRE y III Ti1−2yPyO3 system (REIII=Sc3+, Y3+, Nd3+, Sm3+, Eu3+, Yb3+)

The B-site substituted perovskite solid solution systems Li_3xLa_0.67−xRE_yTi_1−2yP_yO₃ (RE=Sc, Y, Nd, Sm, Eu, Yb) have been investigated. Perovskite solid solutions formed in the range of x=0.10, y<0.10 for RE=Sc³⁺, Y³⁺, Yb³⁺, x=0.10, y≤0.05 for RE=Nd³⁺, Sm³⁺, Eu³⁺. Li_0.3La_0.57Nd_0.05Ti_0.9P_0.05O₃ has the highest bulk conductivity of 4.31×10⁻⁴ S·cm⁻¹ and the highest total conductivity of 2.52×10⁻⁴ S·cm⁻¹ at room temperature in all prepared compositions. The compositions have low activation energies of about 24–30 kJ/mol in the temperature ranges of 298–523 K. SEM studies showed that the sample made by solid-state reaction has a sphere-like morphology and a rough particle with particle size of about 50 μm. The research results also indicated that the reaction temperature decreases and the electrochemical stabilities of the titanate-based perovskite-type solid solutions are improved by using RE³⁺ and P⁵⁺ replaced Ti⁴⁺ on B-site in the Li_3xLa_0.67−xTiO₃ parent.     

Investigation of acceptor centers in semiconductors with the diamond crystal structure by the μ − SR method

The residual polarization of negative muons in crystal silicon samples with phosphorus (P: 1.6×10¹³ cm⁻³) and antimony (Sb: 2×10¹⁸ cm⁻³) impurities is investigated. The measurements are made in a 1000 G magnetic field oriented in a direction transverse to the muon spin in the temperature range 4–300 K. The relaxation rate and shift of the precession frequency in the silicon sample with the phosphorus impurity are measured more accurately than previously. It is found that in antimony-doped silicon the acceptor center _μ A1 at temperatures below 30 K can be in both ionized and neutral states. The experimental data are interpreted on the basis of spin-lattice relaxation of the magnetic moment of an acceptor center, formation of acceptor-donor pairs, and recombination of charge carriers at the acceptor. Preliminary measurements showed a nonzero residual polarization of negative muons in germanium. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 61–66 (10 July 1998)