自旋转向相变中的条纹磁畴研究

用光激发电子显微镜研究了Fe/Ni铁磁膜和Co/Cu/Fe/Ni磁耦合膜中的条纹磁畴. 实验发现：在Fe/Ni体系中,条纹磁畴宽度随着铁层厚度趋近于自旋转向相变点呈指数下降;在Co/Cu/Fe/Ni体系中,Fe/Ni层中的条纹磁畴会沿着钴层磁矩的方向排列,其磁畴宽度会随着Co－Fe/Ni间的层间耦合强度呈指数下降. 理论上推导出条纹磁畴随着磁各向异性能和层间耦合强度变化的统一公式,而实验结果与理论符合得非常好.     

电流驱动下磁畴壁快速运动的研究

在2011年第7期出版的Physics Today杂志上刊登了一篇关于自旋极化电流驱动磁畴壁运动的文章,介绍了该领域的最新进展.现对该文主要内容摘译如下:磁体具有净磁矩,但这并不意味着所有的非配对自旋指向同一方向.通常情况下,多个具有不同磁矩方向的磁畴同     

具有条纹磁畴结构的NiFe薄膜的制备与磁各向异性研究

具有条纹磁畴结构的磁性薄膜表现出面内转动磁各向异性,对于解决高频电子器件的方向性问题起着至关重要的作用.本文采用射频磁控溅射的方法,研究了NiFe薄膜的厚度、溅射功率密度、溅射气压等制备工艺参数对条纹磁畴结构、面内静态磁各向异性、面内转动磁各向异性、垂直磁各向异性的影响规律.研究发现,在功率密度15.6 W/cm~2与溅射气压2 mTorr(1 Torr=1.33322×102Pa)下生长的NiFe薄膜,表现出条纹磁畴的临界厚度在250 nm到300 nm之间.厚度为300 nm的薄膜比250 nm薄膜的垂直磁各向异性场增大近一倍,从而磁矩偏离膜面形成条纹磁畴结构,并表现出面内转动磁各向异性.高溅射功率密度可以降低薄膜出现条纹磁畴的临界厚度.在相同功率密度15.6 W/cm~2下生长300 nm的NiFe薄膜,随着溅射气压由2 mTorr增大到9 mTorr,NiFe薄膜的垂直磁各向异性场逐渐由1247.8 Oe(1 Oe=79.5775 A/m)增大到3248.0 Oe,面内转动磁各向异性场由72.5 Oe增大到141.9 Oe,条纹磁畴周期从0.53μm单调减小到0.24μm.NiFe薄膜的断面结构表明柱状晶的形成是表现出条纹磁畴结构的本质原因,高功率密度下低溅射气压有利于柱状晶结构的形成,表现出规整的条纹磁畴结构,高溅射气压会导致柱状晶纤细化,面内转动磁各向异性与面外垂直磁各向异性增强,条纹磁畴结构变得混乱.     

偶极相互作用对自旋轨道耦合自旋-1凝聚体中磁畴分布的影响

研究准一维简谐势阱中存在自旋轨道耦合（SOC）的自旋-1偶极玻色-爱因斯坦凝聚体,数值求解旋量Gross-Pitaevskii方程,给出磁畴的分布。计算结果表明：磁畴结构与偶极-偶极相互作用（DDIs）密切相关,随着自旋轨道耦合强度和磁化强度的增强,原来的空间对称分布被破坏,随之出现新的分布模式。     

光晶格中玻色-爱因斯坦凝聚体的自旋和磁研究

近年应用光晶格（optical lattice)控制原子玻色－爱因斯坦凝聚体（BEC）的研究取得了突破性的进展。德国Munich研究小组首次在三维光晶格中观察到了超冷原子从BEC超流状态向Mott insulator状态的量子相变。这样的量子相变现象不仅具有重大的理论研究价值，而且为BEC的实际应用提供了新的途径。文章介绍了作者近来在光晶格中BEC的自旋和磁特性方面的一些研究进展，并探讨了它们在磁传感器及量子计算中的可能应用。     

串型耦合双量子点处于自旋阻塞区时磁输运性质的研究

使用双杂质安德森模型的哈密顿量,从理论上研究了串型耦合双量子点系统处于自旋阻塞区时的磁输运性质,并用主方程近似方法求解了哈密顿量.结果表明,自旋轨道耦合作用导致的双量子点间的自旋反转隧穿能够解除系统的自旋阻塞.同时也研究了超精细相互作用导致的在量子点内自旋反转和双量子点之间的自旋关联对系统的磁输运性质的影响,取得了一些有价值的结果,并对相关的物理问题进行了讨论.     

同步辐射X射线磁二色性在自旋电子学研究中的应用

文章对同步辐射X射线磁圆二色谱和X射线磁线二色谱的独特优点进行了综合分析,并通过一些典型应用实例说明同步辐射磁性测量技术具有元素分辨能力、高灵敏度、纳米量级空间分辨能力和皮秒量级时间分辨能力,并可用于测量铁磁性和反铁磁性,因而在自旋电子学材料和器件研究领域具有广泛的应用前景.     

同步辐射X射线磁二色性在自旋电子学研究中的应用

文章对同步辐射X射线磁圆二色谱和X射线磁线二色谱的独特优点进行了综合分析,并通过一些典型应用实例说明同步辐射磁性测量技术具有元素分辨能力、高灵敏度、纳米量级空间分辨能力和皮秒量级时间分辨能力,并可用于测量铁磁性和反铁磁性,因而在自旋电子学材料和器件研究领域具有广泛的应用前景.     

Eu2-xPbxRu2O7中的金属-绝缘体相变和自旋玻璃态行为

通过对Eu2-xPbxRu2O7(x=0.0, 0.2, 0.4, 0.6, 0.8, 1.0和1.8)系列样品的结构、电阻和磁化率的观测,结果发现,随着Pb替代浓度x值的增加,样品的电阻率逐渐减小,系统在x=0.8附近发生了金属-绝缘体(M-I)相变;Ru4+的局域磁矩及其自旋玻璃冻结温度TG也随之降低. 在该体系中,Pb2+对Eu3+的部分替代使样品中载流子浓度增加,Pb的6p能带与Ru 4d电子的T2g能带混合,能带得以拓宽,Ru 4d电子的巡游性增强,导致该体系物性的系列变化.     

化合物HoMn6Sn6的磁晶各向异性及自旋重取向相变研究

采用交换相互作用的分子场理论模型对金属间化合物HoMn6Sn6的自旋重取向相变进行了研究.从理论上计算了HoMn6Sn6的易磁化方向以及Ho和Mn离子磁矩与c轴夹角随温度的变化.基于单离子模型计算了Ho离子的一阶和二阶磁晶各向异性常数K1R和K2R随温度的变化.研究表明,为了很好描述该化合物的自旋重取向相变,必须考虑Ho离子的四阶晶场项及相应的二阶磁晶各向异性常数K2R,K2R与K1R和Mn离子磁晶各向异性常数K1t之间的相互竞争是导致HoMn6Sn6自旋重取向相变的重要因素.     

Magnetic stripe domains in coupled magnetic sandwiches

Magnetic stripe domains in the spin reorientation transition region are investigated in (Fe/Ni)/Cu(001) and Co/Cu/(Fe/Ni)/Cu(001) using photoemission electron microscopy. For (Fe/Ni)/Cu(001), the stripe domain width decreases exponentially as the Fe/Ni film approaches the spin reorientation transition point. For Co/Cu/(Fe/Ni)/Cu(001), the Fe/Ni stripe orientation is aligned with the Co in-plane magnetization, and the stripe domain width decreases exponentially with increasing the interlayer coupling between the Fe/Ni and Co films. By considering magnetic stripes within an in-plane magnetic field, we reveal a universal dependence of the stripe domain width on the magnetic anisotropy and on the interlayer coupling.     

A study of the stripe domain phase at the spin reorientation transition of two-dimensional magnetic system

Stripe domain phase in a two-dimensional magnetic system was studied using model calculation and Monte-Carlo simulation in the spin reorientation transition (SRT) region. We find that near the SRT point the stripe domains evolve into a static spin wave structure with a fractional in-plane magnetization along the stripe direction and a fractional out-of-plane magnetization in a sinusoidal form. With increase in the uniaxial perpendicular anisotropy, both the wavelength and the height of the static spin wave increase slowly until the saturation of the wave height, after which the stripe width increases exponentially with the magnetic anisotropy. Our theoretical result is in good agreement with experimental observations.     

A study of the effective magnetic anisotropy and the corresponding spin configurations in two dimensional ferromagnetic/antiferromagnetic system

The spin configurations of two dimensional ferromagnetic/antiferromagnetic system were investigated using model calculations and Monte-Carlo simulation methods. The lowest energy state was obtained under various coupling conditions to investigate the role of interfacial interaction on anisotropy. We found that the total ferromagnetic layer anisotropy is contributed not only from its own crystalline anisotropy but also from the antiferromagnetic layer spin flop effect. The overall ferromagnetic layer effective anisotropy is calculated as a function of the exchange energy of antiferromagnetic layer and the interfacial interaction energy. If the effective anisotropy from the spin flop effect is comparable with the crystalline anisotropy, the asymmetric spin configuration is generated. In this configuration, the magnetization direction of the ferromagnetic layer is neither perpendicular nor parallel to the antiferromagnetic spin direction. Temperature effect on the perpendicular-to-collinear coupling transition was also investigated using Monte-Carlo simulation, and the relationship between the effective anisotropy and the temperature was obtained.     

Recovery of soft magnetic properties of FeNiSm films by Ta interlayer

The magnetic properties of FeNiSm thin films with different thicknesses, different Ta interlayer thicknesses and different numbers of Ta interlayers were investigated. The single layer FeNiSm shows in-plane uniaxial anisotropy at a thickness below critical value, but shows weak perpendicular anisotropy with a stripe domain structure at thickness above the critical value. Experiments indicate that one or more Ta interlayers inserted into thick FeNiSm films with weak perpendicular anisotropy were effective not only in canceling the perpendicular anisotropy, but also in recovering the in-plane uniaxial anisotropy. Blocking of the columnar growth of FeNi grains by the Ta interlayer is considered to be responsible for this spin reorientation phenomenon. Moreover, the magnetization reversal mechanism in FeNiSm films with uniaxial anisotropy can be ascribed to coherent rotation when the applied field is close to the hard axis and to domain-wall unpinning when the applied field is close to the easy axis. The dynamic magnetic properties of FeNiSm films with uniaxial anisotropy were investigated in the frequency range 0.1-5 GHz. The degradation of the soft magnetic properties of magnetic thin films due to the growth of columnar grains can be avoided by insertion of a Ta interlayer.     

Reorientational transition and stripe domains in Co films

We have grown, by sputtering, Co films on (1 1 1) Si substrate, with the aim to find the critical thickness of the reorientational transition of the magnetization from the plane to out of the plane as the hcp axis is oriented perpendicular to the film. Stripe Domains (SD) by Magnetic Force Microscopy, characteristic signature of Perpendicular Magnetic Anisotropy, have been found only in samples grown in some series while samples grown with the same growth parameters do not show stripe domains, indicating an in-plane orientation of the magnetization. These apparently controversial results will be explained in terms of the system fundamental parameters, magnetization, exchange stiffness constant and perpendicular magnetic anisotropy of the sample, which play a crucial role especially in Co films.     

Electron transport in a two-dimensional electron gas modulated by one ferromagnetic stripe and two Schottky metal stripes

The electron transport in a two-dimensional electron gas modulated by ferromagnetic and Schottky metal stripes is theoretically studied. We find that the transmission and conductance as well as polarization are very sensitive to the position of the Schottky metal stripe, the electric-barrier height and the energy of the incident electron.     

Effect of roughness, frustration, and antiferromagnetic order on magnetic coupling of Fe/Cr multilayers

The interplay between interfacial disorder and the antiferromagnetic order in Cr leads to complex behavior in Fe/Cr multilayers. Measurements of interlayer coupling are discussed for samples with different amounts of disorder ranging from optimally fabricated trilayers of Fe/Cr/Fe on Fe(0 0 1) whiskers, to trilayers with increasing degrees of interfacial roughness, and finally to superlattices of Fe/Cr. The coupling of ferromagnets through noble-metal spacer layers can be described by a model that consists of bilinear coupling averaged over thickness fluctuations and extrinsic biquadratic coupling induced by the thickness fluctuations. This, the conventional model, also describes much of the behavior observed for Fe/Cr multilayers. However, in this case, the antiferromagnetism in Cr leads to results not explained by the conventional model. For nearly ideal interfaces, the Fe–Cr coupling can induce order in Cr, modifying the temperature dependence of the interlayer coupling. In addition, interfacial disorder can frustrate the antiferromagnetic order in the Cr, leading to a variety of ordered states which have been observed by neutron scattering. Each of these ordered states, in turn modifies the interlayer coupling in unexpected ways. The different ways in which the systems minimize the frustration can explain the experimental results.     

Description of spin reorientation transition in Au/Co/Au sandwich with Co film thickness within a simple phenomenological model of ferromagnetic film

Simple phenomenological model of ferromagnetic film characterized by equal energies of surface anisotropies at two sides of a film (symmetric film) is considered. The model is used to describe a two-step spin reorientation transition (SRT) in Au/Co/Au sandwich with Co film thickness: the SRT from perpendicular to canted noncollinear (CNC) state at N_⊥=6.3 atomic layers and the subsequent SRT from CNC to in-plane state at _N∥=10.05$N_{\parallel }=10.05$ atomic layers. Analytic expressions for the stability criterion of collinear perpendicular and in-plane states of a film are derived with account of discrete location of atomic layers. The dependence of borders that separate regions corresponding to various magnetic states of a film in the (k_B,k_S)-diagram on film thickness N is established. k_S(k_B) is surface (bulk) reduced anisotropy constant. The comparison of theory with experiment related to Au/Co/Au sandwich shows that there is a whole region in the (k_B,k_S)-diagram corresponding to experimentally determined values of threshold film thicknesses N_⊥=6.3 and _N∥=10.05$N_{\parallel }=10.05$. The comparison of this region with similar region determined earlier for a bare Co/Au film within the same model of asymmetric film and characterized by N_⊥=3.5, _N∥=5.5$N_{\parallel }=5.5$ shows that the intersection of these regions is not empty. Hence, both the SRT in Au/Co/Au sandwich and in bare Co/Au film with Co film thickness can be described within the same model using the same magnitudes of model parameters k_S, k_B. Based on this result we conclude that the energy of Neel surface anisotropy at free Co surface is negligible compared to the energy of Co–Au interface anisotropy. It is demonstrated that the destabilization of collinear states in symmetric film leads to occurrence of the ground CNC state and two novel metastable CNC states. These three CNC states exhibit different kinds of symmetry. In case of asymmetric film only ground CNC state occurs on destabilization of collinear states of a film.