(Sr,Co,Nb)掺杂SnO2压敏电阻的电学非线性

研究了Sr对新型(Co, Nb)掺杂SnO2压敏材料微观结构和电学性质的影响.当SrCO3的含量从零增加到1.50mol%时,(Co, Nb)掺杂SnO2压敏电阻的击穿电压从240V/mm猛增到1482V/mm.样品的微观结构分析发现, 当SrCO3的含量从零增加到1.50 mol%时, SnO2的晶粒尺寸迅速减小.晶界势垒高度测量揭示,SnO2晶粒尺寸的迅速减小是击穿电压急剧增高的主要原因.对Sr含量增加引起SnO2晶粒减小的根源进行了解释.掺杂1.50 mol% SrCO3的SnO2压敏电阻非线性系数为21.4,击穿电压高达1482V/mm.     

Nb/SnO2复合薄膜的制备、结构及光电性能

用溶胶-凝胶旋涂法在玻璃基底上制备出Nb/SnO₂复合透明导电薄膜,利用XRD,SEM,紫外—可见分光光度计,四探针电阻仪等测试方法对Nb/SnO₂复合薄膜的结构和物性进行了研究.结果表明: 当Nb含量小于0.99at%时,Nb/SnO₂复合薄膜为较纯的四方金红石结构;复合薄膜中晶粒分布均匀,平均尺寸在5—7 nm.当Nb含量小于0.99at%时,Nb/SnO₂复合薄膜的电阻率先减小后增大,当Nb含量为0.37at%时 关键词： 溶胶-凝胶法 2复合薄膜')" href="#">Nb/SnO₂复合薄膜 结构表征 光电性能     

不同Sb含量p-SnO2薄膜的制备和特性

采用化学气相沉积方法, 利用Sb₂O₃/SnO作为源材料, 在蓝宝石衬底上制备出不同Sb掺杂量的SnO₂薄膜, 并在此基础上制作出p-SnO₂:Sb/n-SnO₂同质p-n 结器件. 研究表明, 随着Sb含量的增加, 样品表面变得平滑, 晶粒尺寸逐渐增大, 且晶体质量有所改善, 发现少量Sb的掺入可以起到表面活化剂的作用. Hall测量结果证实适量Sb的掺杂可以使SnO₂呈现p型导电特性, 当Sb₂O₃/SnO的质量比为1:5时, 其电学参数为最佳值. 此外, p-SnO₂:Sb/n-SnO₂同质p-n结器件展现出良好的整流特性, 其正向开启电压为3.4 V.     

常压CVD法合成铌掺杂少层MoS2

利用粉体NbCl₅作为Nb掺杂源,采用常压CVD方法合成了大尺寸Nb掺杂的少层MoS₂薄膜。通过扫描电子显微镜和原子力显微镜观察获得了该薄膜样品的形貌和厚度信息。拉曼光谱和X射线光电子谱测试证实了Nb被掺入到了MoS₂薄膜中,Nb掺杂的MoS₂合金薄膜已经形成。最后,对Nb掺杂的少层MoS₂薄膜的电学性质进行了测试。     

不同晶粒尺寸SnO2纳米粒子的拉曼光谱研究

对晶粒尺寸在4—80nm范围的纯SnO₂纳米颗粒进行了拉曼散射研究.除了SnO₂本征拉曼振动峰外，还有几个新的拉曼振动峰和波长在700nm左右的一个发光很强而且峰宽很大的荧光峰被观察到.结果所示，当纳米颗粒尺寸减小时，纳米SnO₂颗粒的体相 特征拉曼峰变弱，而由缺陷，表面和颗粒尺寸引起的相关效应呈强势.晶粒尺寸在20nm左右是引起体相拉曼光谱变化的临界尺寸.晶粒尺寸在20nm以下，其体相拉曼峰的发生宽化和峰位移动，以及分别出现在位于571cm^-1 的表面振动峰，位于351cm-1 处的界面峰和与表面吸附水分子及氢氧基团的N系列拉曼峰是纳米SnO颗粒的主要特征.这些结果反映了纳米颗粒的微结构变化与颗粒尺寸和表面效应以及它们之间相互作用的信息. 关键词： ２')" href="#">纳米SnO_２ 拉曼光谱 荧光光谱 水分子的吸附     

掺杂水平对ZnO基变阻器电学性能的影响

根据相图规则设计、制备了三个系列不同Bi₂O₃与Sb₂O₃掺杂水平的ZnO基复合变阻器材料,研究了掺杂对氧化锌复合陶瓷电学性能的影响.研究发现,当Sb元素掺杂水平较低时,随着Sb₂O₃掺杂量的增加,所得氧化锌基变阻器材料漏电流的变化也很小,非线性系数(非线性系数α_L和击穿非线性系数α_B)将减小,而场强(场 关键词： 氧化锌 掺杂 复合陶瓷变阻器 电学性质     

Sb、Sm共掺杂SnO2的电子结构与光学性质第一性原理研究

采用基于密度泛函理论的第一性原理计算方法,构建了Sm、Sb及Sm和Sb共掺杂SnO₂超晶胞模型,研究了经过几何优化后的各掺杂体系的焓变值、能带结构、态密度、电荷布居、介电常数、吸收系数、反射率等光电性质.结果表明：Sm和Sb的掺杂可以有效地提升SnO₂的导电性能,且Sb和Sm共掺杂体系的电学性能最佳. Sm和Sb掺杂还可以增加SnO₂在红外波段的电子极化能力和电子跃迁概率,提升了红外反射率,且共掺杂体系的电子束缚能力最强、反射率最高.这为SnO₂基光电材料的研制提供了一定的理论依据.     

Ⅲ族元素掺杂对SnO2电子结构及电学性能的影响

采用密度泛函理论研究了Ⅲ族元素掺杂对SnO₂电子结构及电学性能的影响.态密度分析结果表明，以替代位存在的Ⅲ族杂质均使SnO₂的费米能级明显向低能态方向移动，使得价带顶不完全填满，因此在SnO₂中均充当受主作用.部分态密度分析结果表明，相对于掺Al的SnO₂，Ⅲ族元素中的Ga及In对费米能级附近态密度贡献较大，其主要贡献来自Ga3d态或In4d态，这预示着在SnO₂中掺Ga或In能实现更好的p型掺杂效果.电离能计算结果进一步表明，在Al，Ga及In三种元素中，替位In有最小的电离能(0.06 eV)，这说明其在SnO₂中能形成最浅的受主能级，因而在同等掺杂情况下，可引入最高浓度的空穴，从而实现最佳的p型掺杂效果. 关键词： 密度泛函理论 2')" href="#">SnO₂ Ⅲ族元素掺杂 电子结构     

锰酸锂掺杂Fe和Co的性质的第一性原理计算

文章基于密度泛函理论的第一性原理计算,研究了LiMn₂O₄电池材料在掺杂Fe和Co离子时的电子结构和电化学性能.发现Fe\Co取代Mn³⁺在热力学上是会更加稳定,提升电化学性能.掺杂Fe后,LiMn₂O₄电池材料晶格参数减小(约0.3%);掺杂Co后,LiMn₂O₄电池材料晶格参数减小(约0.5%).这两种掺杂方式让与之相邻的Mn³⁺被氧化成Mn⁴⁺,从而降低了Jahn-Teller畸变情况产生可能性.对于掺Fe尖晶石型锰酸锂(Li₈Mn₁₅FeO₃₂),Mn环境中的Li离子会更容易被提取,第一次放电电压从原来的3.7 V增加至4.623 V;对于掺Co尖晶石型锰酸锂(Li₈Mn₁₅CoO₃₂),第一次放电电压从原来的3.7 V增加至4.101 V.研究为锂电池...     

锰掺杂对Ba(Zr,Ti)O3陶瓷压电与介电性能的影响

采用氧化物固相反应法制备了锰掺杂改性的Ba(Zr_0.06Ti_0.94)O₃陶瓷.研究了锰的掺杂量对Ba(Zr_0.06Ti_0.94)Mn_xO₃ (BZTM)陶瓷的结构、介电和压电性能的影响.实验发现,当锰含量x<0.5 mol%时进入晶格,使材料压电性能提高,损耗减小,表现出受主掺杂的特性;当锰含量x>0.5 mo 关键词： Ba(Zr 3 陶瓷')" href="#">Ti)O₃ 陶瓷 锰掺杂 介电性能 压电性能     

Effects of Sc2O3 on the microstructure and varistor properties of (Co, Nb)-doped SnO2

The effects of Sc₂O₃ on the properties of (Co, Nb)-doped SnO₂ varistors were investigated. It was found that by characterizing the samples, sintered at 1300 °C, the nonlinear coefficient presents a peak of =28.6 for a concentration of 0.05 mol% Sc₂O₃. The average grain size decreases from 2.9 m to 1.5 m, and the breakdown electrical field increases from 655 V/mm to 2197 V/mm. The relative electrical permittivity decreases from 7574 to 792 on increasing Sc₂O₃ from 0.05 mol% to 0.08 mol%. The increase of the breakdown electrical field with increasing Sc₂O₃ concentration is mainly attributed to the decrease of the grain size. The reason why the permittivity decreases with increasing Sc₂O₃ concentration originates from the ratio of the grain size to the barrier width. To illustrate the grain-boundary barrier formation of (Sc, Co, Nb) doped SnO₂ varistors, a modified defect barrier model was introduced, in which the negatively charged acceptors substituting for Sn ions should not be located at the grain interfaces, but at SnO₂ lattice sites of depletion layers instead. PACS 72.20.Ht; 81.20.Ev; 85.30.De; 85.30.Mn; 85.40.Ry     

Varistor and dielectric properties of Cr2O3 doped SnO2–Zn2SnO4 composite ceramics

Cr₂O₃ doped SnO₂–Zn₂SnO₄ composite ceramics were prepared by traditional ceramic processing and the varistor, dielectric properties were investigated. With increasing Cr₂O₃ content, the breakdown electrical field E_B increases from 11 to 92 V/mm and the relative dielectric constant ε_r measured at 1 kHz, 50 °C decreases from 11,028 to 3412, respectively. The barrier height ?_B about 0.8–0.84 eV and the decreasing of SnO₂ grain size suggest that the varistor behavior with high ε_r is originated from SnO₂–SnO₂ or SnO₂–Zn₂SnO₄ grain boundary. In the dielectric spectra lower than 1 kHz, a dielectric peak is presented and depressed with increasing bias voltage. Similarly, at high temperature, the dielectric constant also presents a dielectric peak in the temperature spectra and the peak becomes faint with increasing frequency. The exhibition of the dielectric peak is thought to be attributed to the conduction of grain boundary since it is accompanied by the sharp increase of dielectric loss. In addition, a dielectric relaxation with the activation energy about 0.4–0.5 eV was observed in the temperature range of 20–100 °C. Based on the results, the formation mechanism of Schottky barriers at grain boundaries and the varistor behavior with high dielectric constant are well understood.     

Effects of barium on the nonlinear electrical characteristics and dielectric properties of SnO2-based varistors

The effects of barium on electrical and dielectric properties of the SnO_2·Co_2O_3·Ta_2O_5 varistor system sintered at 1250℃ for 60min were investigated. It is found that barium significantly improves the nonlinear properties. The breakdown electrical field increases from 378.0 to 2834.5V/mm, relative dielectric constant (at 1kHz) falls from 1206 to 161 and the resistivity (at 1kHz) rises from 60.3 to 1146.5kΩ·cm with an increase of BaCO_3 concentration from 0mol% to 1.00mol%. The sample with 1.00mol% barium has the best nonlinear electrical property and the highest nonlinear coefficient (α=29.2). A modified defect barrier model is introduced to illustrate the grain-boundary barrier formation of barium-doped SnO_{2}-based varistors.     

Microstructure and electrical properties of vanadium-doped zinc oxide-based non-ohmic resistors

The microstructure and non-ohmic properties of the ternary system ZVM were investigated in accordance with Mn₃O₄ content. For all samples, the microstructure of the ternary system ZnO-V ₂O₅-Mn₃O₄ consisted of mainly ZnO grain and secondary phase Zn₃(V O₄)₂. The incorporation of Mn₃O₄ to the binary system ZnO-V ₂O₅ was found to restrict the abnormal grain growth of ZnO. The breakdown voltage in the V-I characteristics increased from 17.5 to 463.5 V/mm with the increase in Mn₃O₄ content. The incorporation of Mn₃O₄ up to 0.5 mol% improved non-ohmic properties by increasing non-ohmic coefficient, whereas the further additions decreased it. The highest non-ohmic coefficient (22.2) was obtained from Mn₃O₄ content of 0.5 mol%. It was found that the highest barrier height at grain boundary was 2.66 eV for Mn₃O₄ content of 0.5 mol%.     

Grain size effect on the giant dielectric and nonlinear electrical behaviors of Bi1/2Na1/2Cu3Ti4O12 ceramics

Single phase Bi_1/2Na_1/2Cu₃Ti₄O₁₂ (BNCTO) ceramics with different grain sizes (1.4–4.3 μm) are prepared by a modified Pechini method to investigate their giant dielectric and nonlinear electrical behaviors. The results show that the giant dielectric and nonlinear electrical behaviors are strongly dependent on grain size. With the increment of grain size, the dielectric constant increases monotonically from 14110 (for 1.4 μm sample) to 36183 (for 4.3 μm sample) at 1 kHz, in accompaniment with the breakdown voltage reducing from 112.5 to 43.2 V/mm and the nonlinear coefficient reducing from 4.9 to 3.4. On the basis of the internal barrier layer capacitor (IBLC) model and the IBLC model of Schottky-type potential barrier, an interpretation of the grain size effect on the giant dielectric and nonlinear electrical behaviors is presented.     

Nonlinear electrical characteristics and dielectric properties of Ca,Ta-doped TiO<Subscript>2</Subscript> varistors

Ca,Ta-doped TiO₂ varistors with high nonlinear coefficients are obtained by a ceramic sintering. The nonlinear electrical and dielectric properties of the samples doped with 0.5mol% Ca and various concentrations of Ta (0.05∼2.0mol%) were investigated. The samples sintered at 1350 °C have nonlinear coefficients of α=5.1∼42.1 and high relative dielectric constants approach 10⁵. The effects of Ta-doping on the nonlinear and dielectric properties of the Ca,Ta-doped TiO₂ varistors are studied in greater detail. When the concentration of Ta is 0.5mol%, the sample possesses the highest nonlinear coefficient and a comparatively lower dielectric constant. The effects of Ta and the nonlinear electrical behavior of the TiO₂ system are explained by analogy to a grain-boundary atomic defect model. Received: 24 October 2001 / Accepted: 8 January 2002 / Published online: 3 May 2002 RID="*" ID="*"Corresponding author. Fax: +86-10/826-49531, E-mail: wangwanyan@yahoo.com.cn     

Structural,magnetic and XPS studies of Sn0.95Co0.05O2-0.05 and Sn0.95Fe0.05O2-0.05 nanoparticles

Structural, microstructural, X-ray photoemission spectra (XPS) and magnetic properties of transition metal ion [5 mol% of Co (SC5) and Fe (SF5)]-doped SnO₂ nanoparticles have been studied. The SC5 and SF5 nanoparticles were synthesized by a chemical route using polyvinyl alcohol as surfactant. The doped SnO₂ crystallites were found to exhibit a tetragonal rutile structure and the average grains size was measured by the Scherer relation of X-ray diffraction. Transmission electron micrographs showed that the average grain size of SC5 is smaller than SF5. SC5 nanoparticles showed strong ferromagnetic behaviour but SF5 exhibited an F-centre exchange (FCE) mechanism. Temperature-dependent magnetization showed the values of phase transition temperature. XPS confirmed the presence of Sn–O–Co and Sn–O–Fe bonds in these SC5 and SF5 nanoparticles. The oxidation states of Sn, Co and Fe were found to be +4, +2 and +2, respectively, while the core level XPS peaks of Sn 3d, O 1s, Co 2p and Fe 2p were analyzed.     

High luminance of new green emitting phosphor, Mg2SnO4:Mn

Mg₂SnO₄, which has an inverse spinel structure, was adopted as the host material of a new green emitting phosphor. Luminescence properties of the manganese-doped magnesium tin oxide prepared by the solid state reaction were investigated under vacuum ultraviolet (VUV) ray and low-voltage electron excitation. The Mg₂SnO₄:Mn phosphor exhibited green luminescence with the emission spectrum centered at 500 nm due to spin flip transition of the d-orbital electron associated with the Mn²⁺ ion. Optimum Mn concentration of Mg₂SnO₄:Mn under VUV excitation with 147 nm wavelength and electron beam excitation with 800 V excitation voltage are 0.25 and 0.6 mol%, respectively. The emission intensities of Mg₂SnO₄:Mn phosphors under the two excitation sources are higher than those of Zn₂SiO₄:Mn and ZnGa₂O₄:Mn phosphors. At 0.25 mol% of Mn concentration, on the other hand, the decay time is shorter than 10 ms.     

Nonlinear electrical properties and DC accelerated aging characteristics of ZnO-Pr6O11-CoO-Cr2O3-Dy2O3-based varistors

The nonlinear electrical properties and stability against DC accelerated aging stress of various varistors, which are composed of ZnO-Pr₆O₁₁-CoO-Cr₂O₃-Dy₂O₃ (ZPCCD)-based ceramics, was investigated as a function of Dy₂O₃ content. The varistors with Dy₂O₃ exhibited a high nonlinear exponent above 30, compared with that without Dy₂O₃. The varistor with 0.5 mol% Dy₂O₃ exhibited the highest nonlinearity, with a nonlinear exponent of 66.6 and a leakage current of 1.2 μA. Furthermore, this varistor showed the high stability, in which the variation rate of varistor voltage, of nonlinear exponent, and of leakage are −1.9, −10.5, and +275.0%, respectively, under DC accelerated aging stress, 0.95 V_1 mA/150 °C/24 h.     

Different conduction behaviors of grain boundaries in SiO2-containing 8YSZ and CGO20 electrolytes

Both doped zirconia and ceria have been widely recognized as promising electrolytes in solid oxide fuel cells (SOFC). Total conductivity is an important parameter to evaluate solid electrolytes. It is well know that the contribution to the total conductivity by grain boundaries is especially pronounced for SiO₂-contaminated electrolytes. In this study, we report on the different conduction behaviors of grain boundaries (GB) found in SiO₂-containing (impure) 8YSZ (8 mol% Y₂O₃-doped ZrO₂) and CGO20 (10 mol% Gd₂O₃-doped CeO₂) ceramics. In the grain size range (∼ 0.5–10 μm) studied, the GB conductivity of impure CGO20 ceramics constantly decreases with increasing grain size, in contrast to that observed in impure 8YSZ electrolytes whose GB conductivity increases almost linearly with grain size. It is also found that the variation in GB conductivity versus grain size is different from case to case, depending on the sintering/annealing conditions used to fabricate the ceramics. Two mechanisms were proposed to explain the GB behaviors of the impure 8YSZ and CGO20 ceramics. For doped ceria, the GB phases are supposed to be inert, which do not react with or dissolve into the matrix. Increasing sintering temperature leads to not only grain growth but also change in viscosity and wetting nature of the GB phases. These two factors promote further propagation of the GB phases along the grain boundaries, leading to an increased GB coverage fraction. For doped zirconia, however, the major factor dominating the GB conduction is the further dissolution of SiO₂ into zirconia lattice as a result of increase in sintering temperature or/and time. In addition, we will also evaluate and discuss the validities of the three models that are widely used to analyze the GB conduction in solid electrolytes.