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1.
The interface-optical-propagating (IO-PR) mixing phonon modes of a quasi-zero-dimensional (QOD) wurtzite cylindrical quantum dot (QD) structure are derived and studied by employing the macroscopic dielectric continuum model. The analytical phonon states of IO-PR mixing modes are given. It is found that there are two types of IO-PR mixing phonon modes, i.e. p-IO//z-PR mixing modes and the z-IO//p-PR mixing modes existing in QOD wurtzite QDs. And each IO-PR mixing modes also have symmetrical and antisymmetrieal forms. Via a standard procedure of field quantization, the Frohlich Hamiltonians of electron-(IO-PR) mixing phonons interaction are obtained. Numerical calculations on a wurtzite GaN cylindrical QD are performed. The results reveal that both the radial-direction size and the axial-direction size as well as the dielectric matrix have great influence on the dispersive frequencies of the IO-PR mixing phonon modes. The limiting features of dispersive curves of these phonon modes are discussed in depth. The phonon modes "reducing" behavior of wurtzite quantum confined systems has been observed obviously in the structures. Moreover, the degenerating behaviors of the IO-PR mixing phonon modes in wurtzite QOD QDs to the IO modes and PR modes in wurtzite Q2D QW and QID QWR systems are analyzed deeply from both of the viewpoints of physics and mathematics.  相似文献   

2.
In this paper, we perform systematic calculations of the stress and strain distributions in InAs/GaAs truncated pyramidal quantum dots (QDs) with different wetting layer (WL) thickness, using the finite element method (FEM). The stresses and strains are concentrated at the boundaries of the WL and QDs, are reduced gradually from the boundaries to the interior, and tend to a uniform state for the positions away from the boundaries. The maximal strain energy density occurs at the vicinity of the interface between the WL and the substrate. The stresses, strains and released strain energy are reduced gradually with increasing WL thickness. The above results show that a critical WL thickness may exist, and the stress and strain distributions can make the growth of QDs a growth of strained three-dimensional island when the WL thickness is above the critical value, and FEM can be applied to investigate such nanosystems, QDs, and the relevant results are supported by the experiments.  相似文献   

3.
Mg-doped AlGaN and GaN/AlGaN superlattices are grown by metalorganic chemical vapour deposition (MOCVD) Rapid thermal annealing (RTA) treatments are carried out on the samples. Hall and high resolution x-ray diffraction measurements are used to characterize the electrical and structural prosperities of the as-grown and annealed samples, respectively. The results of hall measurements show that after annealing, the Mg-doped AIGaN sample can not obtain the distinct hole concentration and can acquire a resistivity of 1.4 ×10^3 Ωcm. However, with the same annealing treatment, the GaN/AlGaN superlattice sample has a hole concentration of 1.7 × 10^17 cm-3 and a resistivity of 5.6Ωcm. The piezoelectric field in the GaN/AlGaN superlattices improves the activation efficiency of Mg acceptors, which leads to higher hole concentration and lower p-type resistivity.  相似文献   

4.
An improved valence force field model (VFFM) is suggested to calculate the phonon modes in both bulk specimens and quantum dots (QDs) of AlAs taking account of the effect of transverse effective charges (TOs) correctly.The resultant dispersions of AlAs bulk phonons are in accord better with the results carefully fitted to the experimental data by using 11-parameters rigid-ion model, than those got by ordinary VFFM, especially in the region of near Г point. For AlAs QDs, TCs are evaluated bond by bond for each phonon mode of QD and its effect on the change of the force on atoms is taken into account to modify further the phonon spectrum. The frequency spectra and densities ofphonon states of d/fferent irreducible representations calculated by using improved VFFM are compared with the results of ordinary VFFM. The correct evaluation of the TOs is not only important in calculating the phonon spectrum of both bulk and QD specimens accurately, but is also in the further discussion of the electron-phonon (e-ph) interaction, which can be directly related to TCs of ions in QD.  相似文献   

5.
刘宇安  庄奕琪  马晓华  杜鸣  包军林  李聪 《中国物理 B》2014,23(2):20701-020701
In this work, we present a theoretical and experimental study on the drain current 1/f noise in the AIGaN/GaN high electron mobility transistor (HEMT). Based on both mobility fluctuation and carrier number fluctuation in a two- dimensional electron gas (2DEG) channel of AlGaN/GaN HEMT, a unified drain current 1/f noise model containing a piezoelectric polarization effect and hot carrier effect is built. The drain current 1/f noise induced by the piezoelectric polarization effect is distinguished from that induced by the hot carrier effect through experiments and simulations. The simulation results are in good agreement with the experimental results. Experiments show that after hot carrier injection, the drain current 1/f noise increases four orders of magnitude and the electrical parameter degradation Agm/gm reaches 54.9%. The drain current 1/f noise degradation induced by the piezoelectric effect reaches one order of magnitude; the electrical parameter degradation Agm/gm is 11.8%. This indicates that drain current 1/f noise of the GaN-based HEMT device is sensitive to the hot carrier effect and piezoelectric effect. This study provides a useful reliability characterization tool for the A1GaN/GaN HEMTs.  相似文献   

6.
We investigate the effect of A/N ratio of the high temperature (HT) AIN buffer layer on polarity selection and electrical quality of GaN films grown by radio frequency molecular beam epitaxy. The results show that low Al/N ratio results in N-polarity GaN films and intermediate Al/N ratio leads to mixed-polarity GaN films with poor electrical quality. GaN films tend to grow with Ga polarity on Al-rich AIN buffer layers. GaN films with different polarities are confirmed by in-situ reflection high-energy electron diffraction during the growth process. Wet chemical etching, together with atomic force microscopy, also proves the polarity assignments. The optimum value for room-temperature Hall mobility of the Ga-polarity GaN film is 703cm^2/V.s, which is superior to the N-polarity and mixed-polarity GaN films.  相似文献   

7.
The binding energy of an exciton in a wurtzite GaN/GaAlN strained cylindrical quantum dot is investigated theoretically.The strong built-in electric field due to the spontaneous and piezoelectric polarizations of a GaN/GaAlN quantum dot is included.Numerical calculations are performed using a variational procedure within the single band effective mass approximation.Valence-band anisotropy is included in our theoretical model by using different hole masses in different spatial directions.The exciton oscillator strength and the exciton lifetime for radiative recombination each as a function of dot radius have been computed.The result elucidates that the strong built-in electric field influences the oscillator strength and the recombination life time of the exciton.It is observed that the ground state exciton binding energy and the interband emission energy increase when the cylindrical quantum dot height or radius is decreased,and that the exciton binding energy,the oscillator strength and the radiative lifetime each as a function of structural parameters (height and radius) sensitively depend on the strong built-in electric field.The obtained results are useful for the design of some opto-photoelectronic devices.  相似文献   

8.
Emission properties of self-assembled green-emitting InGaN quantum dots (QDs) grown on sapphire substrates by using metal organic chemical vapor deposition are studied by temperature-dependent photoluminescence (PL) measurements. As temperature increases (15-300K), the PL peak energy shows an anomalous V-shaped (redshift blueshift) variation instead of an S-shaped (redshift-blueshift-redshift) variation, as observed typically in green-emitting InGaN/GaN multi-quantum wells (MOWs). The PL full width at half maximum (FWHM) also shows a V-shaped (decrease-increase) variation. The temperature dependence of the PL peak energy and FWHM of QDs are well explained by a model similar to MOWs, in which carriers transferring in localized states play an important role, while the confinement energy of localized states in the QDs is significantly larger than that in MOWs. By analyzing the integrated PL intensity, the larger confinement energy of localized states in the QDs is estimated to be 105.9meV, which is well explained by taking into account the band-gap shrinkage and carrier thermalization with temperature. It is also found that the nonradiative combination centers in QD samples are much less than those in QW samples with the same In content.  相似文献   

9.
We simulate the current-voltage (I-V) characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths using the quasi-two-dimensional (quasi-2D) model. The calculation results obtained using the modified mobility model are found to accord well with the experimental data. By analyzing the variation of the electron mobility for the two-dimensional electron gas (213EG) with the electric field in the linear region of the AlGaN/AlN/GaN HFET I-V output characteristics, it is found that the polarization Coulomb field scattering still plays an important role in the electron mobility of AlGaN/AlN/GaN HFETs at the higher drain voltage and channel electric field. As drain voltage and channel electric field increase, the 2DEG density reduces and the polarization Coulomb field scattering increases, as a result, the 2DEG electron mobility decreases.  相似文献   

10.
张金风  毛维  张进城  郝跃 《中国物理 B》2008,17(7):2689-2695
To reveal the internal physics of the low-temperature mobility of two-dimensional electron gas (2DEG) in Al- GaN/GaN heterostructures, we present a theoretical study of the strong dependence of 2DEG mobility on Al content and thickness of AlGaN barrier layer. The theoretical results are compared with one of the highest measured of 2DEG mobility reported for AlGaN/GaN heterostructures. The 2DEG mobility is modelled as a combined effect of the scat- tering mechanisms including acoustic deformation-potential, piezoelectric, ionized background donor, surface donor, dislocation, alloy disorder and interface roughness scattering. The analyses of the individual scattering processes show that the dominant scattering mechanisms are the alloy disorder scattering and the interface roughness scattering at low temperatures. The variation of 2DEG mobility with the barrier layer parameters results mainly from the change of 2DEG density and distribution. It is suggested that in AlGaN/GaN samples with a high Al content or a thick AlGaN layer, the interface roughness scattering may restrict the 2DEG mobility significantly, for the AlGaN/GaN interface roughness increases due to the stress accumulation in AlGaN layer.  相似文献   

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