Dependency of photoluminescence from SiO_2 thin films containing Si_(1-x)Ge_x quantum dots on Ge/Si doping ratio

SiO2 thin films containing Si1-xGex quantum dots （QDs） are prepared by ion implantation and annealing treatment. The photoluminescence （PL） and microstructural properties of thin films are investigated. The samples exhibit strong PL in the wavelength range of 400-470 nm and relatively weak PL peaks at 730 and 780 nm at room temperature. Blue shift is found for the 400-nm PL peak, and the intensity increases initially and then decreases with the increase of Ge-doping dose. We propose that the 400-470 nm PL band originates from multiple luminescence centers, and the 730- and 780-nm PL peaks are ascribed to the Si=O and GeO luminescence centers.     

Temperature Dependence of Emission Properties of Self-Assembled InGaN Quantum Dots

Emission properties of self-assembled green-emitting InGaN quantum dots （QDs） grown on sapphire substrates by using metal organic chemical vapor deposition are studied by temperature-dependent photoluminescence （PL） measurements. As temperature increases （15-300K）, the PL peak energy shows an anomalous V-shaped （redshift blueshift） variation instead of an S-shaped （redshift-blueshift-redshift） variation, as observed typically in green-emitting InGaN/GaN multi-quantum wells （MOWs）. The PL full width at half maximum （FWHM） also shows a V-shaped （decrease-increase） variation. The temperature dependence of the PL peak energy and FWHM of QDs are well explained by a model similar to MOWs, in which carriers transferring in localized states play an important role, while the confinement energy of localized states in the QDs is significantly larger than that in MOWs. By analyzing the integrated PL intensity, the larger confinement energy of localized states in the QDs is estimated to be 105.9meV, which is well explained by taking into account the band-gap shrinkage and carrier thermalization with temperature. It is also found that the nonradiative combination centers in QD samples are much less than those in QW samples with the same In content.     

Photoluminescence and thermoluminescence properties of SnO2 nanoparticles embedded in Li20-K20-B203 with Cu-doping

Cu-doped borate glass co-doped with SnO2 nanoparticles is fabricated by melt quenching. The structure and morphology of the samples are examined by X-ray diffraction and field emission scanning electron microscopy. Up-conversion enhancement is observed in the photoluminescence （PL） and thermolumines- cence （TL） intensities of the glass. PL emission spectra are identified in the blue and green regions, and a fourfold increase in emission intensity may be observed in the presence of embedded SnO2 nanoparticles. The glow curve is recorded at 215℃, and fourfold increases in TL intensity are obtained by addition of 0.1 mol% SnO2 nanoparticles to the glass. Higher TL responses of the samples are observed in the energy range of 15-100 KeV. At energy levels greater than -0.1 MeV, however, flat responses are obtained. The activation energy and frequency factor of the second-order kinetic reaction are calculated by the peak shape method.     

Experimental investigation of photolunlinescence spectra of Yb~(3+) sensitized Er~(3+)-doped glass samples in series

Fabrication technology of the Yb3+:Er3+ co-doped glass samples is introduced. Photolummescence (PL) characteristics of a single sample were experimentally investigated. The PL peak intensities of two samples in series were measured and discussed. The results show that the PL peak intensities of two samples in series depend on pump manners and arrangement of the samples. The better amplification ability can be obtained by two samples in series doped with low-concentration ytterbium instead of a single sample doped with high-concentration ytterbium.     

Correlation of Lithium Ionic Diffusion with Nb Concentration in Li7-xLa3Zr2-xNbxO12 Evaluated by an Internal Friction Method

Solid lithium-ion conductors Li7-xLa3Zr2-xNbxO12（x =0.25, 0.5, 1, 1.5） with cubic garnet structure are suc- cessfully prepared by a solid state reaction method, and the effects of Nb concentration on lithium ion diffusion are investigated by means of internal friction （IF） technique. A prominent relaxation-type IF peak （actually composed of two components） is observed in each Nb doped LiTLa3Zr2012 compound： with apeak PL at lower temperature and a peak PH at higher temperature. The mechanisms of the two components are suggested to be associated with two diffusion processes of lithium ions via vacancies： 48g ←→ 48g and 489 ←→ 24d. The relaxational strength of the IF peak gradually decreases, which is accompanied by the activation energy increasing from 0.45 eV to 0.64 eV with the increasing Nb doping level. The corresponding mechanism is ascribed to originate from lattice contraction as well as the lower concentration of diffusion ions induced by the substitution of Zr4＋ by Nb5＋.     

Structural and optical investigation of nonpolar a-plane GaN grown by metal-organic chemical vapour deposition on r-plane sapphire by neutron irradiation

Nonpolar (1120) a-plane GaN films are grown by metal-organic chemical vapour deposition (MOCVD) on r-plane (1102) sapphire.The samples are irradiated with neutrons under a dose of 1 × 10 15 cm 2.The surface morphology,the crystal defects and the optical properties of the samples before and after irradiation are analysed using atomic force microscopy (AFM),high resolution X-ray diffraction (HRXRD) and photoluminescence (PL).The AFM result shows deteriorated sample surface after the irradiation.Careful fitting of the XRD rocking curve is carried out to obtain the Lorentzian weight fraction.Broadening due to Lorentzian type is more obvious in the as-grown sample compared with that of the irradiated sample,indicating that more point defects appear in the irradiated sample.The variations of line width and intensity of the PL band edge emission peak are consistent with the XRD results.The activation energy decreases from 82.5 meV to 29.9 meV after irradiation by neutron.     

The Role of Periodicity in Enhanced Transmission through Subwavelength Hole Arrays

Two kinds of subwavelength hole arrays in metallic films are designed to verify the import, ant role of the periodicity in enhanced transmission of light. The measured optical spectra show that the quasiperiodic hole arrays exhibit an enhanced transmission peak centred at 707nm with a transmission intensity of about 20%, while no plasmon resonance peak is found for the amorphous hole arrays. When the hole diameter decreases in the quasiperiodic structure, the position of the transmission peak shifts slightly, and the transmittance drops, These phenomena indicate the important role of the long-range structural order （particularly the periodicity） in assisting the coupling of incident light wave with the surface plasmon modes of the metallic structures.     

Magnetic properties and magnetocaloric effects of Mn5Ge3-xGax

We report on the magnetic properties and magnetocaloric effects of Mn5Ge3-xGax compounds with x=0.1,0.2,0.3,0.4,0.6 and 0.9. All samples crystallize in the hexagonal Mn5Si3-type structure with space group P63/mcm and order ferromagnetically.The Curie temperature of these compounds decreases with increasing x, from 306K (x=0.1) to 274K (x=0.9).The average Mn magnetic moments increases with increasing Ga content,reaching a maximum value at x=0.6.The magnetic entropy changes in these compounds are determined from the temperature and field dependence of the magnetization using the thermodynamic Maxwell relation.The Ga substitution has two kinds of influence on the magnetocaloric effect (MCE) of Mn5Ge3.One is that the magnitude of the magnetic entropy change decreases,the other is that the MCE peak becomes broadened.     

Optimum fluorescence emission around 1.8 μm for LiYF4 single crystals of various Tm3＋-doping concentrations

In this paper, optical spectra of LiYF4 single crystals doped with Tm3＋ ions of various concentrations are reported. The emission intensity at 1.8 ktm first increases with increasing Tm3＋ concentration, and reaches a maximum value when the concentration of Tm3＋ is about 1.28 mol%, then it decreases rapidly as the concentration of Tm3＋ further increases to 3.49 mol%. The emission lifetime at 1.8 p.m also shows a similar tendency to the emission intensity. The maximum lifetime of 1.8 μm is measured to be 17.68 ms for the sample doped with Tm3＋ of 1.28 mol%. The emission cross section of 3F4 level is calculated. The maximum reaches 3.76 × 10 -21 cm2 at 1909 nm. The cross relaxation （3H6, 3H4 →3 F4, 3F4） between Tm3＋ ions and the concentration quenching effect are mainly attributed to the change of emission with Tm3＋ concentration. The largest quantum efficiency between Tm3＋ ions is estimated to be ,-147% from the measured lifetime and calculated radiative lifetime. All the results suggest that the Tm3＋/LiYF4 single crystal may have potential applications in 2 μm mid-infrared lasers.     

High-strain InGaAs/GaAs quantum well grown by MOCVD

High-strain InGaAs/GaAs quantum wells （QWs） are grown by low-pressure metal-organic chemical vapor deposition （LP-MOCVD）. Photoluminescence （PL） at room temperature is applied for evaluation of the optical property. The influence of growth temperature, V/III ratio, and growth rate on PL characteristic are investigated. It is found that the growth temperature and V/III ratio have strong effects on the peak wavelength and PL intensity. The full-width at half-maximum （FWHM） of PL peak increases with higher growth rate of InGaAs layer. The FWHM of the PL peak located at 1039 nm is 20.1 meV, which grows at 600 ℃ with V/ III ratio of 42.7 and growth rate of 0.96 μm/h.     

Improvement in a-plane GaN crystalline quality using wet etching method

Nonpolar （1120） GaN films are grown on the etched a-plane GaN substrates via metalorganic vapor phase epitaxy. High-resolution X-ray diffraction analysis shows great decreases in the full width at half maximum of the samples grown on etched substrates compared with those of the sample without etching, both on-axis and off-axis, indicating the reduced dislocation densities and improved crystalline quality of these samples. The spatial mapping of the E2 （high） phonon mode demonstrates the smaller line width with a black background in the wing region, which testifies the reduced dislocation densities and enhanced crystalline quality of the epitaxial lateral overgrowth areas. Raman scattering spectra of the E2 （high） peaks exhibit in-plane compressive stress for all the overgrowth samples, and the E2 （high） peaks of samples grown on etched substrates shift toward the lower frequency range, indicating the relaxations of in-plane stress in these GaN films. Furthermore, room temperature photoluminescence measurement demonstrates a significant decrease in the yellow-band emission intensity of a-plane GaN grown on etched templates, which also illustrates the better optical properties of these samples.     

Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer

The effects of V/Ill growth flux ratio on a-plane GaN films grown on r-plane sapphire substrates with an InGaN interlayer are investigated. The surface morphology, crystalline quality, strain states, and density of basal stacking faults were found to depend heavily upon the V/III ratio. With decreasing V/III ratio, the surface morphology and crystal quality first improved and then deteriorated, and the density of the basal-plane stacking faults also first decreased and then increased. The optimal V/III ratio growth condition for the best surface morphology and crystalline quality and the smallest basal-plane stacking fault density of a-GaN films are found. We also found that the formation of basal-plane stacking faults is an effective way to release strain.     

Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst

Graphene on gallium nitride(GaN) will be quite useful when the graphene is used as transparent electrodes to improve the performance of gallium nitride devices. In this work, we report the direct synthesis of graphene on GaN without an extra catalyst by chemical vapor deposition. Raman spectra indicate that the graphene films are uniform and about 5–6 layers in thickness. Meanwhile, the effects of growth temperatures on the growth of graphene films are systematically studied, of which 950℃ is found to be the optimum growth temperature. The sheet resistance of the grown graphene is 41.1Ω/square,which is close to the lowest sheet resistance of transferred graphene reported. The mechanism of graphene growth on GaN is proposed and discussed in detail. XRD spectra and photoluminescence spectra indicate that the quality of GaN epi-layers will not be affected after the growth of graphene.     

Influence of reaction parameters on synthesis of high-quality single-layer graphene on Cu using chemical vapor deposition

Large-area monolayer graphene samples grown on polycrystalline copper foil by thermal chemical vapor deposition with differing CH4 flux and growth time are investigated by Raman spectra, scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. The defects, number of layers, and quality of graphene are shown to be controllable through tuning the reaction conditions: ideally to 2–3 sccm CH4 for 30 minutes.     

Low-leakage-current AIGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

High-performance low-leakage-current A1GaN/GaN high electron mobility transistors （HEMTs） on silicon （111） sub- strates grown by metal organic chemical vapor deposition （MOCVD） with a novel partially Magnesium （Mg）-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally onμe. A 1μ m gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10-8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown A1GaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μ m gate length T-shaped gate HEMTs were also investigated.     

Electrical properties of MOCVD-grown GaN on Si （111） substrates with low-temperature AIN interlayers

The electrical properties of the structure of GaN grown on an Si （111） substrate with low-temperature （LT） A1N interlayers by metal-organic chemical-vapour deposition are investigated. An abnormal P-type conduction is observed in our GaN-on-Si structure by Hall effect measurement, which is mainly due to the A1 atom diffusing into the Si substrate and acting as an acceptor dopant. Meanwhile, a constant n-type conduction channel is observed in LT-A1N, which causes a conduction-type conversion at low temperature （50 K） and may further influence the electrical behavior of this structure.     

p-n 型GaInP2/GaAs叠层太阳电池研究

报道了对p-n型 GaInP2/GaAs叠层太阳电池的研究结果.采用低压金属有机物化学气相沉积工艺制备电池样品.通过对GaInP2顶电池中场助收集效应的计算机模拟，提出用p+p-n-n+结构取代常用的p+n 结构，显著改善了GaInP2顶电池和GaInP2/GaAs叠层太阳电池的光伏性能，使其光电转换效率(Eff)分别达到14.26% 和23.82% (AM0, 25℃, 2×2cm2). 关键词： 场助收集效应 镓铟磷 砷化镓 叠层太阳电池     

Growth of threaded AIN whiskers by a physical vapor transport method

Threaded aluminum nitride （A1N） whiskers are grown by a physical vapor transport method in a radio-frequency induction heating furnace. The resultant whiskers are characterized by X-ray diffraction, Raman scattering, scanning electron microscopy, transmission electron microscopy and photoluminescence. The analysis shows that the whiskers are single-crystalline, wurtzite AIN. The threaded A1N whiskers are 0.5 μm~100 μm in diameter and several millimeters in length in the fiber direction, and have lots of tiny sawteeth on the surface. The morphology of this threaded A1N whisker is beneficial for bonding when the whisker is used in composite. The growth of the whiskers is dominated by the vapor-solid （VS） mechanism, and the particular morphology might result from an oscillating condition produced in the radio-frequency induction heating furnace.     

Integrated physics package of a chip-scale atomic clock

The physics package of a chip-scale atomic clock （CSAC） has been successfully realized by integrating vertical cavity surface emitting laser （VCSEL）, neutral density （ND） filter, λ/4 wave plate, 87Rb vapor cell, photodiode （PD）, and magnetic coil into a cuboid metal package with a volume of about 2.8 cm3. In this physics package, the critical component, 87Rb vapor cell, is batch-fabricated based on MEMS technology and in-situ chemical reaction method. Pt heater and thermistors are integrated in the physics package. A PTFE pillar is used to support the optical elements in the physics package, in order to reduce the power dissipation. The optical absorption spectrum of 87Rb D1 line and the microwave frequency correction signal are successfully observed while connecting the package with the servo circuit system. Using the above mentioned packaging solution, a CSAC with short-term frequency stability of about 7 × 10^-10τ-1/2 has been successfully achieved, which demonstrates that this physics package would become one promising solution for the CSAC.     

Effects of annealing treatment on the formation of CO2 in ZnO thin films grown by metal-organic chemical vapor deposition

Post-growth annealing was carried out on ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD). The grain size of ZnO thin film increases monotonically with annealing temperature. The ZnO thin films were preferential to c-axis oriented after annealing as confirmed by X-ray diffraction (XRD) measurements. Fourier transformation infrared transmission measurements showed that ZnO films grown at low temperature contains CO₂ molecules after post-growth annealing. A two-step reaction process has been proposed to explain the formation mechanism of CO₂, which indicates the possible chemical reaction processes during the metal-organic chemical vapor deposition of ZnO films.