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1.
Al/Cu阻抗匹配状态方程测试靶制备工艺研究   总被引:3,自引:0,他引:3       下载免费PDF全文
 采用轧制技术和真空扩散连接技术,成功实现了Al/Cu阻抗匹配状态方程测试靶的制备,通过原子力显微镜(AFM)、扫描电镜(SEM)、X射线衍射(XRD)、台阶仪等测试方法,对样品结构及表面质量进行分析。结果表明:通过轧制技术制备的金属薄膜表面质量较好,表面粗糙度小于25 nm;扩散连接铝铜薄膜界面结合良好,为连续连接,扩散界面控制在150 nm以内。  相似文献   

2.
 为了满足惯性约束聚变(ICF)和状态方程(EOS)实验以及靶装配工艺的需要,在薄膜轧制过程中间以及轧制工艺完成以后需要对镍膜进行热处理来改善其组织结构和力学性能。对多辊轧机冷轧的方法制备的厚11 mm镍膜中间退火工艺进行了研究,根据确定的合适的退火工艺退火后继续轧制得到成品镍膜厚7 mm,表面粗糙度小于50 nm,基本满足目前状态方程实验对箔膜的要求。金相显微照片表明镍膜晶粒经500 ℃保温1 h退火由轧制前的条带状变为等轴晶;镍膜硬度经500 ℃退火后由4 GPa降低到了2.3 GPa左右;XRD衍射测试表明镍膜经500 ℃以上温度退火后,高角度的衍射峰开始出现,织构得到一定程度的改善。由此可以确定镍膜合适的中间退火温度为520 ℃保温1 h。  相似文献   

3.
随着状态方程物理实验的深入,对靶的制备精度和要求不断提高,采用原有的工艺制备的EOS靶已经不能满足物理实验的要求。考虑现有设备情况,采用轧机轧制法制备金属薄膜,精密切削加工楔形靶,真空扩散连接法制备Al-Cu阻抗匹配靶。  相似文献   

4.
机械研磨法制备晶体密度钼膜技术研究   总被引:4,自引:4,他引:0       下载免费PDF全文
 具有晶体理论密度的高质量金属薄膜对于材料的高温高压状态方程研究十分重要。通过机械研磨抛光技术制备出厚度大于20 μm,均方根粗糙度小于100 nm,厚度一致性好于99%的钼膜。研究了工艺条件对薄膜表面形貌、厚度一致性与表面粗糙度等的影响。机械研磨抛光时,采用较小粒径的磨料和材质较软的研具,可以获得较高的表面质量。在研磨过程中,工件的边缘受到的磨料切削作用最强,采用工件在工装表面均匀分布的形式,薄膜的厚度一致性有较大改善。探讨了目前制备极薄的薄膜工艺存在的问题及可能的解决办法。  相似文献   

5.
影响TiO2薄膜亲水性的三种物理特性有——表面形貌、表面粗糙度、表面颗粒大小。本文中使用电子束蒸发法制备TiO2薄膜,使用AFM、静态接触角检测对不同厚度的TiO2薄膜的物理特性以及亲水特性进行了分析。结果显示,相较于薄膜表面的颗粒尺寸及表面粗糙度,薄膜表面形貌对TiO2薄膜亲水特性有着更重要的影响。  相似文献   

6.
影响TiO2薄膜亲水性的三种物理特性有——表面形貌、表面粗糙度、表面颗粒大小。本文中使用电子束蒸发法制备TiO2薄膜,使用AFM、静态接触角检测对不同厚度的TiO2薄膜的物理特性以及亲水特性进行了分析。结果显示,相较于薄膜表面的颗粒尺寸及表面粗糙度,薄膜表面形貌对TiO2薄膜亲水特性有着更重要的影响。  相似文献   

7.
 在基底清洗、薄膜沉积和薄膜后处理三个阶段均采用离子束技术,制备了氧化铪薄膜,并对薄膜的光学性能、表面特性和激光损伤阈值特性进行测试和研究。结果表明,利用离子束技术清洗基底可以增强表面吸附;离子束辅助沉积在合适离子束能量下可以得到高堆积密度、高损伤阈值的薄膜;离子束后处理氧化铪薄膜可以降低表面粗糙度,改善抗激光损伤阈值。说明在三个薄膜制备阶段同时采用合适的离子束参数可以制备出结构致密、阈值高、表面粗糙度好的氧化铪薄膜。  相似文献   

8.
聚酰亚胺薄膜表面粗糙度的影响因素   总被引:1,自引:0,他引:1       下载免费PDF全文
 采用热蒸发气相沉积聚合方法(VDP)制备了聚酰亚胺(PI)薄膜,研究了设备、衬底温度、升温过程和单体配比因素对PI薄膜表面形貌的影响。利用干涉显微镜和扫描电镜对薄膜表面形貌进行了分析;利用原子力显微镜测定了薄膜表面粗糙度。结果表明:设定蒸发源-衬底距离为74 cm时可成连续膜;蒸发源采用一段升温和多段升温时,膜表面均方根粗糙度分别为291.23 nm和61.99 nm;采用细筛网可防止原料的喷溅;均苯四甲酸二酐和4,4′-二氨基二苯醚(PMDA和ODA)单体沉积速率比值为0.9∶1时,膜表面均方根粗糙度值可减小至3.30 nm;沉积衬底温度保持30 ℃左右时,膜表面均方根粗糙度为4.01 nm, 随温度的上升,膜表面质量会逐渐变差。  相似文献   

9.
表面增强拉曼光谱(surface-enhanced Raman spectroscopy,SERS)技术是一种基于探测吸附于金属基底表面分子振动光谱的快速无损检测方法,目前广泛应用于表面吸附、电化学催化、传感器、生物医学检测和痕量的检测与分析等领域。本实验采用直流磁控溅射技术在BK7玻璃基底上沉积一层厚度为50nm的金属铜薄膜,在Ar离子轰击作用下获得不同表面粗糙度的金属铜薄膜样品,从而制备具有不同表面增强拉曼光谱活性的金属基底。实验样品分别通过X射线衍射仪(XRD)、原子力显微镜(AFM)、分光光度计、拉曼光谱仪表征其结构、表面形貌及光学性质。测试结果表明铜膜在Ar离子束轰击前后,样品X射线衍射谱的峰值强度没有发生变化,说明其晶相结构未发生改变;随着离子束能量的增加,薄膜表面粗糙度改变,光学散射强度随着表面粗糙度的增加而增强;离子束薄膜表面改性后,以罗丹明B(Rh B)为探针分子,表征薄膜样品表面增强拉曼的活性,通过对比不同样品表面Rh B的拉曼光谱,发现其光谱强度随金属铜薄膜样品表面粗糙度的增加而增强。  相似文献   

10.
研究了在硫酸甲醇体系中进行电解抛光制备状态方程(EOS)靶用钨薄膜。分析了钨的阳极极化曲线,对薄膜的表面形貌、晶粒取向、密度和厚度一致性进行了测试和分析,并制备出均方根粗糙度小于50nm、厚度一致性好于99%、能够保持原材料密度的钨箔膜,满足激光驱动材料高温高压状态方程研究的标准靶材料的需求,证明电解抛光是制备低表面粗糙度、块材密度的EOS所用金属箔材的有效手段。  相似文献   

11.
A simulation of the growth of an obliquely deposited thin film in a three-dimensional lattice was made using kinetic Monte Carlo method. Cu growth in three dimensions on a (001) substrate with high deposition rates has been simulated in this model. We mainly investigated the variation of three-dimensional morphology and microstructure offilms with incidence angle of sputtered flux. The relation of roughness and densities of films with incidence angle was also investigated. The simulation results show that the surface roughness increases and the relative density of thin film decreases with increasing incidence angle, respectively; the columnar structures were separated by void regions for large incidence angle and high deposition rate. The simulation results are in good agreement with experimental results.However, the orientation angle of columns is not completely consistent with the classical tangent rule.  相似文献   

12.
In this work, the thermal conductivity variation due to pit formation and surface roughness in nanometer-thick semiconducting films has been studied. It is shown that the thermal conductivity of thin films is reduced due to the presence of these effects in the films. This reduction in thermal conductivity is dependent on film thickness. The present analysis has been done on GaAs nanometer-thick films using the available experimental data.  相似文献   

13.
The effect of substrate roughness on growth of ultra thin diamond-like carbon (DLC) films has been studied. The ultra thin DLC films have been deposited on silicon substrates with initial surface roughness of 0.15, 0.46 and 1.08 nm using a filted cathodic vacuum arc (FCVA) system. The films were characterized by Raman spectroscope, transmission electron microscope (TEM) and atomic force microscopy (AFM) to investigate the evolution of the surface roughness as a function of the film thickness. The experimental results show that the evolution of the surface morphology in an atomic scale depends on the initial surface morphology of the silicon substrate. For smooth silicon substrate (initial surface roughness of 0.15 nm), the surface roughness decreased with DLC thickness. However, for silicon substrate with initial surface roughness of 0.46 and 1.08 nm, the film surface roughness decreased first and then increased to a maximum and subsequently decreased again. The preferred growth of the valley and the island growth of DLC were employed to interpret the influence of substrate morphology on the evolution of DLC film roughness.  相似文献   

14.
潘永强  杨琛 《应用光学》2018,39(3):400-404
为了探究二氧化钛(TiO2)薄膜表面粗糙度的影响因素, 利用离子束辅助沉积电子束热蒸发技术对不同基底粗糙度以及相同基底粗糙度的K9玻璃完成二氧化钛(TiO2)光学薄膜的沉积。采用TalySurf CCI非接触式表面轮廓仪分别对镀制前基底表面粗糙度和镀制后薄膜表面粗糙度进行测量。实验表明, TiO2薄膜表面粗糙度随着基底表面的增大而增大, 但始终小于基底表面粗糙度, 说明TiO2薄膜具有平滑基地表面粗糙的作用; 随着沉积速率的增大, 薄膜表面粗糙度先降低后趋于平缓; 对于粗糙度为2 nm的基底, 离子束能量大小的改变影响不大, 薄膜表面粗糙度均在1.5 nm左右; 随着膜层厚度的增大, 薄膜表面粗糙度先下降后升高。  相似文献   

15.
Investigations are made on the correlation of plasma resonance radiation of thin silver films with their surface roughness. The roughness dimensions are determined by comparing the radiation with theory and furthermore by means of electron microscope. It is found, that the height and the extension of the roughness hills increases with film thickness and with substrate temperature. The values are varied in the range from 20 to 200 å (height of the roughness hills) and from 400 to 1000 å (extension of the roughness hills). Different roughnesses are reached by varying the film thickness and the substrate temperature and in some cases by a special technique of evaporation.  相似文献   

16.
李德熊 《光子学报》1992,21(3):272-279
将双偏心滑轮间歇片机构的一个滑轮,改成偏心半径仅为主滑轮的1/m,并以两倍的速度旋转,可以有效地改善偏心滑轮机构的间歇输片特性。  相似文献   

17.
Bismuth films with different thicknesses have been grown by do sputtering on substrates held at room temperature. The films are always formed by columnar crystals with a grain size comparable to the film thickness which lead to surface roughness. It increases with the thickness of the films and has a strong influence on the film optical properties. The films have been irradiated with nanosecond laser pulses, and real-time reflectivity measurements during the irradiation were used to follow the changes in the film optical properties. It will be shown that pulsed-laser irradiation of films thinner than 100 nm improves substantially their surface roughness and their crystalline quality by increasing the grain size at least one order of magnitude.  相似文献   

18.
19.
Anomalous surface roughness scaling, where both the local and the large-scale roughness show a power-law dependence on the film thickness, has been widely observed. Here we show that the value of the local roughness exponent in the early stages of Cu electrodeposition depends on the deposition potential. However, initial anomalous scaling can lead to two qualitatively different types of behavior for large film thickness (t>/ or =4 microm). For Cu films electrodeposited with forced convection at high potential and current density, the anomalous scaling is transient: the local roughness saturates for the thickest films studied. When Cu films are electrodeposited at similar potential and current density but with reduced convection, no saturation of the local roughness is observed. Instead the film forms overhangs such that the surface height becomes a multivalued function of the lateral position.  相似文献   

20.
The surface potential due to physical adsorption of xenon on iron, copper and sodium films has been investigated as a function of annealing temperature using the diode method. As iron and copper films are annealed, the surface potential falls to low values. On sodium films the surface potential is always zero despite finite uptakes of xenon. The falling surface potentials on iron and copper may be due to contamination, changes in the crystal plane exposure of the film, a rise in the metallic work function, or variations in the roughness of the surface. Surface roughness appears to be the vital factor, smoother films giving lower surface potentials because they lack the electric field enhancement which occurs on rough surfaces.  相似文献   

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