Sapphire surface patterning using femtosecond laser micromachining

This study presents an alternative method for micron-resolution patterning of a sapphire surface utilizing the characteristic of an ultra-short pulse (10^?15 s) from ytterbium (Yb) femtosecond laser (FS-laser) irradiation. Conventional processes often involve several steps, such as wet chemical or dry etching, for surface structuring of sapphire. In this study, two-dimensional array patterns on the sapphire surface with an area of 5×5 mm² and a depth of 1.2±0.1 μm can be directly and easily fabricated by a single step of the FS-laser process, which involves 350-fs laser pulses with a wavelength of 517 nm at a repetition rate of 100 kHz. The measured ablation depths on the sapphire surface display that the proposed process can be under well-controlled conditions. Based on the design changes for being quickly implemented in the micromachining process, a FS laser can be a promising and competitive tool for patterning sapphire with an acceptable quality for industrial usage.     

Time-resolved transmission study of fused silica during laser-induced backside dry etching

Laser-induced backside dry etching (LIBDE) is a promising technique for micro- and nanomachining of transparent materials. Although several experiments have already proved the suitability and effectiveness of the technique, there are several open questions concerning the etching mechanism and the concomitant processes. In this paper time-resolved light transmission investigations of etching process of fused silica are presented. 125 nm thick silver coating was irradiated through the carrying 1 mm thick fused silica plate by single pulses of a nanosecond KrF excimer laser. The applied fluences were 0.38, 0.71 and 1 J/cm². During the etching process the irradiated spots were illuminated by an electronically delayed nitrogen laser pumped dye laser. The delay between the pump and probe pulses was varied in the range of 0 ns and 20 μs. It was found that the transmitted probe beam intensity strongly depends on the applied delays and fluences. Scanning electron microscopy and energy dispersive X-ray spectrometry of the etched surface showed the existence of silver droplets and fragments on the illuminated surfaces and silver atoms built into the treated surface layer influencing the transmission behavior of the studied samples.     

Laser direct patterning of the T-shaped ITO electrode for high-efficiency alternative current plasma display panels

The laser direct patterning technique is one of the new methods of direct etching process to replace the conventional photolithography. In this experiment, a Q-switched diode-pumped Nd:YVO₄ (λ = 1064 nm) laser was used to produce the indium-tin oxide (ITO) patterns with a complex T-shaped structure on glass substrate. The results showed that the overlapping rate of laser beam had a major effect on the quality of the edge of the ITO electrode. When the overlapping rate was about 75%, it was possible to obtain optimum linearity in the edge of patterned ITO electrode. By using the optimum conditions of 75% overlapping rate, 500 mm/s scanning speed, and 40 kHz repetition rate, an alternative current plasma display panels (AC PDPs) with T-shaped ITO electrode was fabricated and characterized. The discharging results showed that the AC PDPs with the laser ablated T-shaped ITO electrode had a better discharging characteristics compared to the conventional sample with wet-etched stripe-type ITO electrode.     

The study of the solution concentration influencing on laser-induced electrochemical etching silicon

The laser electrochemical etching process, which combines the laser direct etching process and the electrochemical etching process, is a compound etching technique. In order to further understand the solution concentration influencing on the laser-induced electrochemical etching of silicon; a 248 nm excimer laser as a light source and KOH solution as an electrolyte were adopted in this study. The experiments of micromachining silicon by laser-induced electrochemical etching were carried out. On the basis of the experiments results, the solution concentration influencing on the etching rates in the process of laser electrochemical etching of silicon was researched. The reasons of the etching phenomena were analyzed in detail. The experimental results indicate that the solution concentration influencing on the etching process is mainly rooted in the absorption of different concentration solutions to laser. In general, less absorption and low solution concentration are good for the etching role in the process of laser electrochemical etching.     

Embedded dots inside glass for optical film using UV laser of ultrafast laser pulse

Microstructures are usually fabricated on the surface of optical sheets to improve the optical characteristics. In this study, a new fabrication process with UV (ultraviolet) laser direct writing method is developed to embed microstructures inside the glass. Then the optical properties of glass such as reflection and refraction indexes can be modified. Single- and multi-layer microstructures are designed and embedded inside glass substrate to modify the optical characteristics. Both luminance and uniformity can be controlled with the embedded microstructures. Thus, the glass with inside pattern can be used as a light guide plate to increase optical performance. First, an optical commercial software, FRED, is applied to design the microstructure configuration. Then, UV laser direct writing with output power 2.5-2.6 W, repetition rate 30 kHz, wave length: 355 nm, and pulse duration 15 ns is used to fabricate the microstructures inside the glass. The effect of dot pattern in the glass such as the dot pitch, the layer gap, and the number of layer on the optical performance is discussed. Machining capacity of UV laser ranges from micron to submicrometer; hence with this ultrafast laser pulse, objectives of various dimensions such as dot, line width, and layers can be easily embedded in the glass by one simple process. In addition, the embedded microstructures can be made with less contamination. Finally, the optical performance of the glasses with various configurations is measured using a Spectra Colorometer (Photo Research PR650) and compared with the simulated results.     

The relationship of etching behavior and crystal orientation of aluminum doped zinc oxide films

Aluminum doped zinc oxide (AZO) transparent conducting films were dynamically deposited on corning glass substrates in an in-line sputtering system operated at mid-frequency sputtering mode with excitation frequency of 40 kHz. This study addressed the surface structure as well as the electrical and optical properties after wet-chemical etching. With the increase of substrate temperature, the dominant orientation of the as-deposited films changes from (0 0 2) to (1 0 3). After wet-chemical etching, due to the quick etching rate of the (0 0 2) plane relative to the (1 0 3) plane, the surface morphology of the films deposited at different temperatures show a transition from craterlike to granular surface morphology. The experimental results demonstrate that the crystal orientation of the as-deposited films plays an important role for the etching behavior of the films.     

Investigation of porous silicon carbide as a new material for environmental and optoelectronic applications

In this paper, we present an experimental study on the chemical and electrochemical etching of silicon carbide (SiC) in different HF-based solutions and its application in different fields, such as optoelectronics (photodiode) and environment (gas sensors). The thin SiC films have been grown by pulsed laser deposition method. Different oxidant reagents have been explored. It has been shown that the morphology of the surface evolves with the etching conditions (oxidant, concentration, temperature, etc.). A new chemical polishing solution of polycrystalline 6H-SiC based on HF:Na₂O₂ solution has been developed. Moreover, an electrochemical etching method has been carried out to form a porous SiC layer on both polycrystalline and thin SiC films. The PL results show that the porous polycrystalline 6H-SiC and porous thin SiC films exhibited an intense blue luminescence and a green-blue luminescence centred at 2.82 eV (430 nm) and 2.20 eV (560 nm), respectively. Different device structures based on both prepared samples have been investigated as photodiode and gas sensors.     

Use of plasma polymerisation process for fabrication of bio-MEMS for micro-fluidic devices

Using a plasma polymerisation process with optical lithography, wet and dry etching techniques we have fabricated an organic micro-fluidic device (OMDF) on silicon/glass substrate. An asymmetric electrode array used in micro-fluidic device (MFD) with small electrode (4 μm wide) separated from the large electrode (20 μm wide) by 20 μm and 6 μm gaps in both sides respectively. In this study we have found that plasma polymerisation process is not only important for changing the surface chemical and physical properties but also has advantage in bonding of these micro devices at low temperature (∼100 °C) due to low T_g of polymeric material. The fluidic velocity measurement shows a maximum of about 450 μm/s in a 150 μm channel width of organic micro-fluidic devices after plasma surface modification.     

The potential of UV femtosecond laser ablation for varnish removal in the restoration of painted works of art

Despite significant advances, laser ablation with nanosecond pulses presents limitations in dealing with the restoration of classes of painted works of art, such as paintings with a very thin layer of varnish. Femtosecond laser processing promises the means for overcoming such limitations. To this end, femtosecond ablation of two typical varnishes, dammar and mastic, is examined. For these varnishes, processing by Ti:Sapphire irradiation (800 nm) turns out to be ineffective. In contrast, irradiation with 248 nm ∼500 fs laser pulses results in a higher etching resolution (etching rates of ∼1 μm/pulse or less). For irradiation with few laser pulses at moderate laser fluences, etched morphology is far smoother than in the processing with nanosecond laser pulses. Furthermore, chemical modifications are considerably reduced (by nearly an order of magnitude), and exhibit a number of additional novel differences. Both etching rates and extent of chemical modifications are largely independent of varnish absorptivity. In all, femtosecond UV laser irradiation is indicated to hold a high potential, offering new perspectives for the restoration of painted works of art. Finally, a tentative model is advanced accounting in a consistent way for the observations.     

Laser ablation of toluene liquid for surface micro-structuring of silica glass

Microstructures with well-defined micropatterns were fabricated on the surfaces of silica glass using a laser-induced backside wet etching (LIBWE) method by diode-pumped solid state (DPSS) UV laser at the repetition rate of 10 kHz. For a demonstration of flexible rapid prototyping as mask-less exposure system, the focused laser beam was directed to the sample by galvanometer-based point scanning system. Additionally, a diagnostics study of plume propagation in the ablated products of toluene solid film was carried out with an intensified CCD (ICCD) camera.     

Ablation process of silica glass induced by laser plasma soft X-ray irradiation

Silica glass can be machined by irradiation with laser plasma soft X-rays on nano- and micrometer scale. We have investigated the ablation process of silica glass induced by laser plasma soft X-ray irradiation. We observed ionic and neutral species emitted from silica surfaces after irradiation. Dominant ions and neutrals are O⁺ and Si⁺ ions and Si, O, SiO and Si₂ neutrals, respectively. The ions have kinetic energies of 13 and 25 eV, which are much higher than those of particles emitted by evaporation. The energy of laser plasma soft X-rays absorbed to silica glass at a fluence of 1.4 J/cm² is estimated to be 380 kJ/cm³, which is higher than the binding energy of SiO₂ of 76 kJ/cm³. These results suggest that the most of the bonds in silica glass are broken by absorption of laser plasma soft X-rays, that several percent of the atoms are ionized, and that neutral atoms are emitted together with repulsive ions. The process possibly enables us to fabricate nano structures.     

The influence of laser-induced surface modifications on the backside etching process

Spectroscopic measurements in the UV/VIS region show reduced transmission through laser-induced backside wet etching (LIBWE) of fused silica. Absorption coefficients of up to 10⁵ cm⁻¹ were calculated from the transmission measurements for a solid surface layer of about 50 nm. The temperatures near the interface caused by laser pulse absorption, which were analytically calculated using a new thermal model considering interface and liquid volume absorption, can reach 10⁴ K at typical laser fluences. The high absorption coefficients and the extreme temperatures give evidence for an ablation-like process that is involved in the LIBWE process causing the etching of the modified near-surface region. The confinement of the ablation/etching process to the modified near-surface material region can account for the low etch rates observed in comparison to front-side ablation.     

Backside etching of fused silica with Nd:YAG laser

The laser-induced backside etching of fused silica with gallium as highly absorbing backside absorber using pulsed infrared Nd:YAG laser radiation is demonstrated for the first time. The influence of the laser fluence, the pulse number, and the pulse length on the etch rate and the etched surface topography was studied. The comparable high threshold fluences of about 3 and 7 J/cm² for 18 and 73 ns pulses, respectively, are caused by the high reflectivity of the fused silica-gallium interface and the high thermal conductivity of gallium. For the 18 and 73 ns long pulses the etch rate rises almost linearly with the laser fluence and reaches a value of 350 and 300 nm/pulse at a laser fluence of about 12 and 28 J/cm², respectively. Incubation processes are almost absent because etching is already observed with the first laser pulse at all etch conditions and the etch rate is constant up to 30 pulses.The etched grooves are Gaussian-curved and show well-defined edges and a smooth bottom. The roughness measured by interference microscopy was 1.5 nm rms at an etch depth of 0.6 μm. The laser-induced backside etching with gallium is a promising approach for the industrial application of the backside etching technique with IR Nd:YAG laser.     

Microlens arrays of high-refractive-index glass fabricated by femtosecond laser lithography

Microlens arrays of high-refractive-index glass GeO₂-SiO₂ were fabricated by femtosecond laser lithography assisted micromachining. GeO₂-SiO₂ thin glass films, which were deposited by plasma-enhanced chemical vapor deposition, have a refractive index of 1.4902 and exhibit high transparency at wavelengths longer than 320 nm. Using a femtosecond laser, three-dimensional patterns were written inside resists on GeO₂-SiO₂ films, and then the patterns were transferred to the underlying films by CHF₃ and O₂ plasma treatments. This combined process enabled us to obtain uniform microlens structures with a diameter of 38 μm. The heights of the transferred lenses were approximately one-quarter the height of the resist patterns, due to differences in the plasma etching rates between GeO₂-SiO₂ and the resist. The lens surfaces were smooth. When 632.8-nm-wavelength He-Ne laser light was normally coupled to the lenses, focal spots with a diameter of 3.0 μm were uniformly observed. The combined process was effective in fabricating three-dimensional surfaces of inorganic optical materials.     

Crackless linear through-wafer etching of Pyrex glass using <Emphasis Type="Italic">liquid-assisted</Emphasis> CO<Subscript>2</Subscript> laser processing

Pyrex glass etching is an important technology for the microfluid application to lab-on-a-chip devices, but suffers from very low etching rate and mask-requiring process in conventional HF/BOE wet or plasma dry etching as well as thermal induced crack surface by CO₂ laser processing. In this paper, we applied the liquid-assisted laser processing (LALP) method for linear through-wafer deep etching of Pyrex glass without mask materials to obtain a crackless surface at very fast etching rates up to 25 μm/s for a 20 mm long trench. The effect of laser scanning rate and water depth on the etching of the 500 μm thick Pyrex glass immersed in liquid water was investigated. The smooth surface without cracks can be achieved together with the much reduced height of bulge via an appropriate parameter control. A mechanism of thermal stress reduction in water and shear-force-enhanced debris removal is discussed. The quality improvement of glass etching using LALP is due to the cooling effect of the water to reduce the temperature gradient for a crackless surface and natural convection during etching to carry away the debris for diminishing bulge formation. An erratum to this article can be found at     

Time-resolved measurements during backside dry etching of fused silica

The laser-induced backside dry etching (LIBDE) investigated in this study makes use of a thin metal film deposited at the backside of a transparent sample to achieve etching of the sample surface. For the time-resolved measurements at LIBDE fused silica samples coated with 125 nm tin were used and the reflected and the transmitted laser intensities were recorded with a temporal resolution of about 1 ns during the etching with a ∼30 ns KrF excimer laser pulse. The laser beam absorption as well as characteristic changes of the reflection of the target surface was calculated in dependence on the laser fluence in the range of 250-2500 mJ/cm² and the pulse number from the temporal variations of the reflection and the transmission. The decrease of the time of a characteristic drop in the reflectivity, which can be explained by the ablation of the metal film, correlates with the developed thermal model. However, the very high absorption after the film ablation probably results in very high temperatures near the surface and presumably in the formation of an absorbing plasma. This plasma may contribute to the etching and the surface modification of the substrate. After the first pulse a remaining absorption of the sample was measured that can be discussed by the redeposition of portions of the ablated metal film or can come from the surface modification in the fused silica sample. These near-surface modifications permit laser etching with the second laser pulse, too.     

Laser processing of micro-optical components in quartz

Laser induced backside wet etching combined with the diffractive gray tone phase mask has been used for the fabrication of a micro-lens array with a single lens diameter of 1 mm and a micro-prism in quartz. The micro-lens array was tested as beam homogenizer for high power XeCl excimer laser yielding a clear improvement in the quality of the laser beam.The optimum fluence range for fabrication of micro-lenses by laser induced backside wet etching using 1.4 M pyrene in THF solution and 308 nm irradiation wavelength is 1-1.6 J/cm². The etching mechanisms of LIBWE are based on a combination of pressure and temperature jumps at quartz-liquid interface.     

Laser etching of transparent materials at a backside surface adsorbed layer

The laser etching using a surface adsorbed layer (LESAL) is a new method for precise etching of transparent materials with pulsed UV-laser beams. The influence of the processing parameters to the etch rate and the surface roughness for etching of fused silica, quartz, sapphire, and magnesium fluoride (MgF₂) is investigated. Low etch rates of 1 nm/pulse and low roughness of about 1 nm rms were found for fused silica and quartz. This is an indication that different structural modifications of the material do not affect the etching significantly as long as the physical properties are not changed. MgF₂ and sapphire feature a principal different etch behavior with a higher etch rate and a higher roughness. Both incubation effects as well as the temperature dependence of the etch rate can be interpreted by the formation of a modified near surface region due to the laser irradiation. At repetition rates up to 100 Hz, no changes of the etch rate have been observed at moderate laser fluences.     

Hillock sizes after wet etching in silicon

The formation of two- and three-dimensional hillocks is regularly observed in Si(1 1 1) steps and Si(1 0 0) during wet etching. Frequently the resulting morphology consists of hillocks scattered on a landscape of limited roughness. Recently we proposed a mean field model (MFM) in which the observed hillock-and-valley pattern is possible under steady state if hillock etching is slightly faster than valley etching. This condition implies that hillock size distributions must be an exponential decreasing function. In this work, we report a systematic study of hillock size distributions of experimental morphologies obtained under different etchant concentrations in Si(1 0 0). We found that experimental hillock size distributions are in agreement with those predicted by the MFM.