Surface modifications of crystalline silicon created by high intensity 1064 nm picosecond Nd:YAG laser pulses

A study of silicon modification induced by a high intensity picosecond Nd:YAG laser, emitting at 1064 nm, is presented. It is shown that laser intensities in the range of 5 × 10¹⁰-0.7 × 10¹² W cm⁻² drastically modified the silicon surface. The main modifications and effects can be considered as the appearance of a crater, hydrodynamic/deposition features, plasma, etc. The highest intensity of ∼0.7 × 10¹² W cm⁻² leads to the burning through a 500 μm thick sample. At these intensities, the surface morphology exhibits the transpiring of the explosive boiling/phase explosion (EB) in the interaction area. The picosecond Nd:YAG laser-silicon interaction was typically accompanied by massive ejection of target material in the surrounding environment. The threshold for the explosive boiling/phase explosion (TEB) was estimated to be in the interval 1.0 × 10¹⁰ W cm⁻² < TEB ≤ 3.8 × 10¹⁰ W cm⁻².     

Assessment of the consistency of H2O line intensities over the near-infrared using sun-pointing ground-based Fourier transform spectroscopy

We report on the consistency of water vapour line intensities in selected spectral regions between 800-12,000 cm⁻¹ under atmospheric conditions using sun-pointing Fourier transform infrared spectroscopy. Measurements were made across a number of days at both a low and high altitude field site, sampling a relatively moist and relatively dry atmosphere. Our data suggests that across most of the 800-12,000 cm⁻¹ spectral region water vapour line intensities in recent spectral line databases are generally consistent with what was observed. However, we find that HITRAN-2008 water vapour line intensities are systematically lower by up to 20% in the 8000-9200 cm⁻¹ spectral interval relative to other spectral regions. This discrepancy is essentially removed when two new linelists (UCL08, a compilation of linelists and ab-initio calculations, and one based on recent laboratory measurements by Oudot et al. (2010) [10] in the 8000-9200 cm⁻¹ spectral region) are used. This strongly suggests that the H₂O line strengths in the HITRAN-2008 database are indeed underestimated in this spectral region and in need of revision. The calculated global-mean clear-sky absorption of solar radiation is increased by about 0.3 W m⁻² when using either the UCL08 or Oudot line parameters in the 8000-9200 cm⁻¹ region, instead of HITRAN-2008. We also found that the effect of isotopic fractionation of HDO is evident in the 2500-2900 cm⁻¹ region in the observations.     

A multispectrum analysis of the ν2 band of HCN: Part I. Intensities, broadening, and shift coefficients

Absolute intensities, self- and air-broadening coefficients, self- and air-induced shift coefficients and their temperature dependences have been determined for lines belonging to the P- and R-branches of the ν₂ band of H¹²C¹⁴N centered near 712 cm⁻¹. Infrared spectra of HCN in the 14-μm region were obtained at high resolution (0.002-0.008 cm⁻¹) using two different Fourier transform spectrometers (FTS), the McMath-Pierce FTS at the National Solar Observatory on Kitt Peak and the Bruker IFS 120HR FTS at the Pacific Northwest National Laboratory. Spectra were recorded with 99.8% pure HCN as well as lean mixtures of HCN in air at various temperatures ranging between +26 and −60 °C. A multispectrum nonlinear least squares technique was used to fit selected intervals of 36 spectra simultaneously to obtain the line positions, intensities, broadening, and shift parameters. The measured line intensities were analyzed to determine the vibrational band intensity and the Herman-Wallis coefficients. The measured self-broadening coefficients vary between 0.2 and 1.2 cm⁻¹ atm⁻¹ at 296 K, and the air-broadening coefficients range from 0.08 to 0.14 cm⁻¹ atm⁻¹ at 296 K. The temperature dependence exponents of self-broadening range from 1.46 to −0.12 while the corresponding exponents for air broadening vary between 0.58 and 0.86. The present measurements are the first known determination of negative values for the temperature dependence exponents of HCN-broadening coefficients. We were able to support our self-broadening measurements with appropriate theoretical calculations. Our present measurements are compared, where possible, with previous measurements for this and other HCN bands, as well as the parameters that are included in the 2000 and 2004 editions of the high-resolution transmission (HITRAN) database.     

The sodium diffusion in aluminium-oxide

The transport of Na through the polycrystalline ceramic arc tube of high intensity discharge lamps has been investigated. This complex process consists of several steps: solution in the ceramics, diffusion through the ceramics, leaving the bulk phase, evaporation from the surface. Among the listed processes the kinetics of the diffusion was examined in the temperature range 400-1200 °C, separately from other disturbing effects. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) were used to determine the concentration depth profiles. The obtained results confirmed that the grain boundary diffusion plays an important role in the transport process of sodium through the ceramic wall. The bulk and the grain boundary diffusion coefficients and the temperature dependencies of these transport processes have been determined. The activation energy of Na bulk diffusion is 56.5 ± 6.7 kJ/mol at 900-1200 °C, respectively the activation energies of Na grain boundary diffusion amount to 97.5 ± 21.6 kJ/mol in the temperature range 700-1100 °C and 7.7 ± 4.0 × 10⁻² kJ/mol at 400-700 °C. The preexponential factor of the bulk diffusion was found to be D_o = 5.1 × 10⁻¹⁵ ± 9.5 × 10⁻¹⁷ cm²/s in the temperature range 900-1200°C, whereas the preexponential factors of grain boundary diffusion are D_o = 1.1 × 10⁻¹⁰ ± 1.1 × 10⁻¹¹ cm²/s at 700-1100 °C and D_o = 7.5 × 10^-15 ± 1.5 × 10⁻¹⁷ cm²/s at 400-700 °C.     

Empirical line parameters of methane from 1.1 to 2.1 μm

To provide line parameters for the near-infrared methane spectrum, 35,306 line positions and intensities at room temperature were retrieved between 6180 and 9200 cm⁻¹, along with 4936 lines between 4800 and 5500 cm⁻¹. For this, laboratory absorption spectra were recorded at 0.010-0.022 cm⁻¹ resolution using the McMath-Pierce Fourier Transform Spectrometer located on Kitt Peak in Arizona. Positions were calibrated using CO transitions at 2.3 and 1.6 μm and H₂O lines at 1.9 and 1.3 μm. The minimum line intensity included was 3.7×10⁻²⁶ cm⁻¹/(molecule cm⁻²), and the combined sum of the intensities in these two intervals was 7.085×10⁻²⁰ cm⁻¹/(molecule cm⁻²) at 296 (±4) K. Quantum assignments from the literature were matched for 1% of the features, and a new methane database was compiled for the near-infrared.     

Impact of thermal effects induced by ultrasound on viability of rat C6 glioma cells

In order to have consistent and repeatable effects of sonodynamic therapy (SDT) on various cancer cells or tissue lesions we should be able to control a delivered ultrasound energy and thermal effects induced. The objective of this study was to investigate viability of rat C6 glioma cells in vitro depending on the intensity of ultrasound in the region of cells and to determine the exposure time inducing temperature rise above 43 °C, which is known to be toxic for cells. For measurements a planar piezoelectric transducer with a diameter of 20 mm and a resonance frequency of 1.06 MHz was used. The transducer generated tone bursts with 94 μs duration, 0.4 duty-cycle and initial intensity I_SATA (spatial averaged, temporal averaged) varied from 0.33 W/cm² to 8 W/cm² (average acoustic power varied from 1 W to 24 W). The rat C6 glioma cells were cultured on a bottom of wells in 12-well plates, incubated for 24 h and then exposed to ultrasound with measured acoustic properties, inducing or causing no thermal effects leading to cell death. Cell viability rate was determined by MTT assay (a standard colorimetric assay for assessing cell viability) as the ratio of the optical densities of the group treated by ultrasound to the control group. Structural cellular changes and apoptosis estimation were observed under a microscope. Quantitative analysis of the obtained results allowed to determine the maximal exposure time that does not lead to the thermal effects above 43 °C in the region of cells for each initial intensity of the tone bursts used as well as the threshold intensity causing cell death after 3 min exposure to ultrasound due to thermal effects. The averaged threshold intensity was found to be about 5.7 W/cm².     

NiO+YSZ anode substrate for screen-printing fabrication of YSZ electrolyte film in solid oxide fuel cell

Anode substrate has a great effect on screen-printing fabrication of yttria-stabilized zirconia (YSZ) electrolyte film and cell performance. In this work, NiO+YSZ anode substrate was prepared by a conventional ceramic sintering method, on which dense YSZ electrolyte film was successfully fabricated by screen-printing method. Microstructure of the anode substrate and cell performance were investigated. The optimal amount of addition of starch to the anode substrate was 20 wt%. The optimal temperature for pre-sintering of NiO powder was 800 °C. A single cell with the NiO powder pre-sintered at 800 °C exhibited the highest power density of 0.95 W cm⁻² at 700 °C.     

Effects of seed layer on the structure and property of zinc oxide thin films electrochemically deposited on ITO-coated glass

ZnO films with different morphologies were deposited on the ITO-coated glass substrate from zinc nitrate aqueous solution at 65 °C by a seed-layer assisted electrochemical deposition route. The seed layers were pre-deposited galvanostatically at different current densities (i_sl) ranging from −1.30 to −3.0 mA/cm², and the subsequent ZnO films had been done using the potentiostatic technique at the cathode potential of −1.0 V. Densities of nucleation centers in the seed layers varied with increasing the current density, and the ZnO films on them showed variable morphologies and optical properties. The uniform and compact nanocrystalline ZnO film with (0 0 2) preferential orientation was obtained on seed layer that was deposited under the current density (i_sl) of −1.68 mA/cm², which exhibited good optical performances.     

A study of ovarian cancer biomarker amplification using ultrasound for early stage detection

The application of serum biomarker to ovarian tumors for early stage detection and clinical diagnosis is a rapidly expanding research area. The problem with conventional markers is that they are often released too late or at too low a level to be detected in time to trigger effective treatment. Ultrasound has been used to influence bio-effects in living cells, but there is only one reported case of the use of ultrasound to enhance the release of a biomarker (Carcinoembryonic antigen CEA). In this study we report the use of ultrasound to enhance the release of a combination of ovarian cancer biomarkers (CA125 and CA19-9) to help in the diagnosis of ovarian cancer at an early stage. The results indicated that after 5 min sonication at a frequency of 1 MHz and intensity of 0.3 W cm⁻², the CA125 and CA19-9 levels were increased by 2.02 and 4.21-fold respectively. These findings suggest that ultrasonic treatment can be used to enhance the release of serum biomarkers from ovarian tumors.     

Variable-temperature FT-IR studies on the thermodynamics of carbon dioxide adsorption on a faujasite-type H-Y zeolite

Adsorption of carbon dioxide on a faujasite-type H-Y zeolite (Si:Al = 2.6:1) was studied by variable-temperature (200-290 K range) infrared spectroscopy. Adsorbed CO₂ molecules interact with the Brønsted acid Si(OH)Al groups located inside the zeolite supercage, bringing about a characteristic bathochromic shift of the O-H stretching mode from 3645 cm⁻¹ (free OH group) to 3540 cm⁻¹ (hydrogen-bonded CO₂ adsorption complex). Simultaneously, the asymmetric (ν₃) mode of adsorbed CO₂ is observed at 2353 cm⁻¹. From the observed variation of the integrated intensity of the 3645 and 2353 cm⁻¹ IR absorption bands upon changing temperature, corresponding values of standard adsorption enthalpy and entropy were found to be ΔH° = −28.5(±1) kJ mol⁻¹ and ΔS° = −129(±10) J mol⁻¹ K⁻¹. Comparison with the reported values of ΔH° for CO₂ adsorption on other zeolites is briefly discussed.     

Preparation of activated carbons from cherry stones by activation with potassium hydroxide

Using cherry stones, the preparation of activated carbon has been undertaken in the present study by chemical activation with potassium hydroxide. A series of KOH-activated products was prepared by varying the carbonisation temperature in the 400-900 °C range. Such products were characterised texturally by gas adsorption (N₂, −196 °C), mercury porosimetry, and helium and mercury density measurements. FT-IR spectroscopy was also applied. The carbons prepared as a rule are microporous and macroporous solids. The degree of development of surface area and porosity increases with increasing carbonisation temperature. For the carbon heated at 900 °C the specific surface area (BET) is 1624 m² g⁻¹, the micropore volume is 0.67 cm³ g⁻¹, the mesopore volume is 0.28 cm³ g⁻¹, and the macropore volume is 1.84 cm³ g⁻¹.     

The first high-resolution analysis of the 10-μm absorption of thioformaldehyde

The 10 μm region of thioformaldehyde (H₂CS) has been recorded at high resolution (0.005 cm⁻¹) using a Fourier transform spectrometer. H₂CS was produced by low-pressure pyrolysis of a gas flow of C₃H₅SCH₃ in Ar at 560 °C or CH₃SCl at 1150 °C, which was introduced into a multipass White cell with an optical path length of 32 m. Forty scans were recorded for the range 750-1400 cm⁻¹ at a total pressure of 0.15 mbar. A thorough analysis of the three lowest wavenumber fundamental bands, ν₃, ν₄ and ν₆, which fall in this region, has been carried out using a Hamiltonian model, which takes explicitly into account the numerous resonances affecting the ro-vibrational energy levels; especially the massive A-type Coriolis resonance between the out-of-plane wagging mode, ν₄, and the in-plane rocking mode, ν₆. These two modes are only separated by 0.83 cm⁻¹, and they are thoroughly mixed. From the fittings, the following band centers were derived: ν_o (ν₄)=990.18213(40) cm⁻¹, ν_o (ν₆)=991.02021(50) cm⁻¹ and ν_o (ν₃)=1059.20476 (30) cm⁻¹ where the uncertainties are one standard deviation. In addition, a number of relative line intensities were measured permitting the determination of relative values of the first-order transition moments and therefore relative band intensities for all three bands. Finally, a comprehensive list of line wavenumbers and relative intensities has been generated.     

Electrical characterisation of ruthenium Schottky contacts on n-Ge (1 0 0)

Ruthenium (Ru) Schottky contacts were fabricated on n-Ge (1 0 0) by electron beam deposition. Current–voltage (I–V), deep level transient spectroscopy (DLTS), and Laplace-DLTS techniques were used to characterise the as-deposited and annealed Ru/n-Ge (1 0 0) Schottky contacts. The variation of the electrical properties of the Ru samples annealed between 25 °C and 575 °C indicates the formation of two phases of ruthenium germanide. After Ru Schottky contacts fabrication, an electron trap at 0.38 eV below the conduction band with capture cross section of 1.0×10⁻¹⁴ cm⁻² is the only detectable electron trap. The hole traps at 0.09, 0.15, 0.27 and 0.30 eV above the valence band with capture cross sections of 7.8×10⁻¹³ cm⁻², 7.1×10⁻¹³ cm⁻², 2.4×10⁻¹³ cm⁻² and 6.2×10⁻¹³ cm⁻², respectively, were observed in the as-deposited Ru Schottky contacts. The hole trap H(0.30) is the prominent single acceptor level of the E-centre, and H(0.09) is the third charge state of the E-centre. H(0.27) shows some reverse annealing and reaches a maximum concentration at 225 °C and anneals out after 350 °C. This trap is strongly believed to be V–Sb₂ complex formed from the annealing of V–Sb defect centre.     

Global modeling of CO2 absolute line intensities from CW-CRDS and FTS measurements in the 1.6 and 2.0 μm regions

Line intensities of ¹³C¹⁶O₂ have been measured between 5851 and 6580 cm⁻¹ using CW-cavity ring down spectroscopy (CRDS) and in the 4700-5050 and 6050-6850 cm⁻¹ regions using Fourier transform spectroscopy. As a result of the high sensitivity (noise equivalent absorption α_min∼3×10⁻¹⁰ cm⁻¹) and high dynamics allowed by CW-CRDS, accurate line intensities of 2039 transitions ranging between 1.1×10⁻²⁸ and 1.3×10⁻²³ cm⁻¹/(molecule cm⁻²) were measured with an average accuracy of 4%. These transitions belong to a total of 48 bands corresponding to the ΔP=9 series of transitions. Additionally, unapodized absorption spectra of ¹³C-enriched samples have been recorded using a high-resolution Bruker IFS125HR Fourier transform spectrometer. Spectral resolutions of 0.004 cm⁻¹ (maximum optical path difference (MOPD)=225 cm) and 0.007 cm⁻¹ (MOPD=128.6 cm), and pressure×path length products in the ranges 5.2-12 and 69-450 hPa×m have been used for the lower and higher energy spectral regions, respectively. Absolute line intensities have been measured in the 2001i−00001, 3001i−00001 (i=1, 2, 3) and 00031−00001 bands. An excellent agreement was achieved for the line intensities of the 3001i−00001 (i=1, 2, 3) bands measured by both FTS and CW-CRDS. The CW-CRDS and FTS experimental intensity data together with selected intensity information from the literature have been fitted simultaneously using the effective operators approach. Two sets of effective dipole moment parameters have thus been obtained, which reproduce the observed line intensities in the 2.0 and 1.6 μm regions within experimental uncertainties.     

Annealing temperature dependence of Raman scattering in Si/SiO2 superlattice prepared by magnetron sputtering

Si/SiO₂ superlattices were prepared by magnetron sputtering, and the deposition temperature and annealing temperature had a great influence on the superlattice structure. In terms of SEM images, the mean size of Si nanocrystals annealed at 1100 °C is larger than that of nanocrystals annealed at 850 °C. It was found that the films deposited at room temperature are amorphous. With increasing deposition temperature, the amorphous and crystalline phases coexist. With increasing annealing temperature, the Raman intensity of the peak near 470 cm⁻¹ decreases, and the intensity of that at 520 cm⁻¹ increases. Also, on increasing the annealing temperature, the Raman peak near 520 cm⁻¹ shifts and narrows, and asymmetry emerges. A spherical cluster is used to model the nanocrystals in Si/SiO₂ superlattices, and the observed Raman spectra are analyzed by combining the effects of confinement on the phonon frequencies. Raman spectra from a variety of nanocrystalline silicon structures were successfully explained in terms of the phonon confinement effect. The fitted results agreed well with the experimental observations from SEM images.     

Effects of neutron irradiation and subsequent annealing on the optical characteristics of sapphire

In this paper, the effect of neutron irradiation on sapphire single crystal with fast neutron of 1.0×10¹⁸ and 1.0×10¹⁹ neutrons/cm² has been investigated along with the effect of annealing temperature. It is found that the colorless transparent sapphire single crystals were turned yellow after 10 MeV fast neutron irradiation at room temperature. There are peaks at 206, 230, 258, 305, 358 and 452 nm after neutron irradiation. And the intensity of optical absorption bands decrease with wavelength and annealing temperature. A new absorption peak at 452 nm was found after isothermal annealing at 400 °C for 10 min, which was ascribed to F₂⁺ color center. Because of the recombination of interstitial ions and vacancies, color centers were almost removed after annealing at 1000 °C. The TL peaks were found to shift to higher temperature after neutron irradiation. And a higher fluence of the neutron irradiation would result in deep traps revealed as the new TL peaks at 176 and 227 °C.     

Indium tin oxide sol-gel precursor conversion process using the third harmonics of Nd:YAG laser

We use the third harmonics of Nd:YAG laser (λ = 355 nm) for simultaneous precursor conversion and dopant activation on sol-gel ITO thin films at a laser fluence range of 700-1000 mJ/cm². A minimum resistivity of 5.37 × 10⁻² Ω-cm with a corresponding carrier concentration of 6 × 10¹⁹ cm⁻³ is achieved at laser irradiation fluence of 900 mJ/cm². X-ray photoelectron analysis reveals that extremely high tin concentration of 19.4 at.% and above is presented in the laser-cured ITO thin films compared with 8.7 at.% in the 500 °C thermally cured counterpart. These excess tin-ions form complex defects, which contribute no free carriers but act as scattering centers, causing inferior electrical properties of the laser-cured films in comparison with the thermally cured ones.     

Progress in developing a thermal method for measuring the output power of medical ultrasound transducers that exploits the pyroelectric effect

Progress in developing a new measurement method for ultrasound output power is described. It is a thermal-based technique with the acoustic power generated by a transducer being absorbed within a specially developed polyurethane rubber material, whose high absorption coefficient ensures energy deposition within a few mm of the ultrasonic wave entering the material. The rate of change of temperature at the absorber surface is monitored using the pyroelectric voltage generated from electrodes disposed either side of a 60 mm diameter, 0.061 mm thick membrane of the piezoelectric polymer polyvinylidene fluoride (pvdf) bonded to the absorber. The change in the pyroelectric output voltage generated by the sensor when the transducer is switched ON and OFF is proportional to the delivered ultrasound power. The sensitivity of the device is defined as the magnitude of these switch voltages to a unit input stimulus of power (watt). Three important aspects of the performance of the pyroelectric sensor have been studied. Firstly, measurements have revealed that the temperature dependent sensitivity increases over the range from approximately 20 °C to 30 °C at a rate of +1.6% °C⁻¹. Studies point to the key role that the properties of both the absorbing backing layer and pvdf membrane play in controlling the sensor response. Secondly, the high sensitivity of the technique has been demonstrated using an NPL Pulsed Checksource, a 3.5 MHz focused transducer delivering a nominal acoustic power level of 4 mW. Finally, proof-of-concept of a new type of acoustic sensor responding to time-averaged intensity has been demonstrated, through fabrication of an absorber-backed hydrophone of nominal active element diameter 0.4 mm. A preliminary study using such a device to resolve the spatial distribution of acoustic intensity within plane-piston and focused 3.5 MHz acoustic fields has been completed. Derived beam profiles are compared to conventional techniques that depend on deriving intensity from acoustic pressure measurements made using the sensor as a calibrated hydrophone.     

Investigation of p-type behavior in Ag-doped ZnO thin films by E-beam evaporation

Ag-doped ZnO (ZnO:Ag) thin films were grown on glass substrates by E-beam evaporation technique. The structural, electrical and optical properties of the films were investigated as a function of annealing temperature. The films were subjected to post annealing at different temperatures in the range of 350-650 °C in an air ambient. All the as grown and annealed films at temperature of 350 °C showed p-type conduction. The films lost p-type conduction after post annealing treatment temperature of above 350 °C, suggesting a narrow post annealing temperature window for the fabrication of p-type ZnO:Ag films. ZnO:Ag film annealed at 350 °C revealed lowest resistivity of 7.25 × 10⁻² Ω cm with hole concentration and mobility of 5.09 × 10¹⁹ cm⁻³ and 1.69 cm²/V s, respectively. Observation of a free-to-neutral-acceptor (e,A^o) and donor-acceptor-pair (DAP) emissions in the low temperature photoluminescence measurement confirms p-type conduction in the ZnO:Ag films.     

ZrB2-based Ohmic contacts to p-GaN

The annealing temperature dependence of contact resistance and layer stability of ZrB₂/Ti/Au and Ni/Au/ZrB₂/Ti/Au Ohmic contacts on p-GaN is reported. The as-deposited contacts are rectifying and transition to Ohmic behavior for annealing at ≥750 °C, a significant improvement in thermal stability compared to the conventional Ni/Au Ohmic contact on p-GaN, which is stable only to <600 °C. A minimum specific contact resistance of ∼2 × 10⁻³ Ω cm⁻² was obtained for the ZrB₂/Ti/Au after annealing at 800 °C while for Ni/Au/ZrB₂/Ti/Au the minimum value was 10⁻⁴ Ω cm⁻² at 900 °C. Auger Electron Spectroscopy profiling showed significant Ti, Ni and Zr out diffusion at 750 °C in the Ni/Au/ZrB₂/Ti/Au while the Ti and Zr intermix at 900 °C in the ZrB₂/Ti/Au. These boride-based contacts show promise for contacts to p-GaN in high temperature applications.