半导体光放大器中垂直双抽运四波混频效应的理论研究

建立了输入信号光偏振方向任意情况下的半导体光放大器(SOA)中 垂直双抽运四波混频(FWM)效应的完整宽带理论模型. 以基于SOA的垂直双抽运FWM型全光波长转换器为例, 通过数值模拟的方法, 理论研究了输入信号光与两抽运光功率、两抽运光与信号光之间的波长失 谐量和输入信号光偏振方向等工作参数对SOA的垂直双抽 运FWM效应及基于SOA的垂直双抽运FWM型波长转换器特性的影响.     

基于半导体光放大器的交叉增益型波长转换器转换特性的研究

从理论和实验上研究了基于半导体光放大器的交叉增益型波长转换器的转换特性.实验研究了转换特性与信号调制格式、放大器增益的关系.利用大信号分析模型讨论了消光比、平均功率转换效率和交流转换效率等性能与平均抽运功率、探测功率及放大器增益特性之间的关系.结果表明,交流转换效率能综合消光比和平均功率转换效率两种指标,在转换器性能优化中有重要的作用 交叉增益型波长转换器输入动态范围较小,很难实现对信号调制格式透明 放大器的增益是取得最佳转换性能的关键 关键词：     

基于半导体光放大器平行双抽运对OFDM光信号进行全光波长变换性能研究

研究了基于半导体光放大器平行双抽运对光正交频分复用信号进行全光波长变换的系统.信号光源经2Gb/s电信号直接调制后再和双抽运光耦合,经半导体光放大器后,由于四波混频效应而产生新的波长的信号光.实验结果显示,经半导体光放大器四波混频效应后,产生新的波长的信号光将携带OFDM信号且偏振不敏感,转换效率与双抽运光之间的波长间隔,抽运与信号光波长间距,信号光与泵浦光之间的偏振夹角等有关.同时也测量了转换的OFDM信号的功率-误码曲线和接收星座图.     

基于半导体激光放大器增益饱和的波长转换的小信号分析

利用小信号模型对基于半导体激光放大器增益饱和的波长转换作了理论分析和实验研究，并获得了波长转换效率与半导体激光放大器特性参数关系的解析表达式．通过数学计算表明，波长转换器的频率响应不仅受到半导体激光放大器的载流子寿命的限制，而且受到半导体激光放大器的饱和功率、增益以及光波导损耗的影响． 关键词：     

基于半导体光放大器平行双抽运对OFDM光信号进行全光波长变换性能研究

研究了基于半导体光放大器平行双抽运对光正交频分复用信号进行全光波长变换的系统.信号光源经2Gb/s电信号直接调制后再和双抽运光耦合,经半导体光放大器后,由于四波混频效应而产生新的波长的信号光.实验结果显示,经半导体光放大器四波混频效应后,产生新的波长的信号光将携带OFDM信号且偏振不敏感,转换效率与双抽运光之间的波长间隔,抽运与信号光波长间距,信号光与泵浦光之间的偏振夹角等有关.同时也测量了转换的OFDM信号的功率-误码曲线和接收星座图.     

半导体光放大器增益及发光特性的理论研究

半导体光放大器(SOA)的非线性特性在光开关、波长变换、光逻辑运算中有重要的应用.研究了注入电流、入射光波长及SOA有源区长度对SOA增益和发光功率的影响.数值模拟结果表明:注入电流的增加,会引起载流子浓度的增加,且使SOA增益趋于饱和的速率加快;不同的SOA模型存在一个最佳输入光波长,在此波长附近有较好的增益特性;加长半导体光放大器有源区长度可获得更大增益,同时提高了器件的响应速率.     

交叉增益调制的全光波长转换的消光比特性分析

建立了基于半导体光放大器交叉增益调制的波长转换理论模型,讨论了放大器的偏置电流、抽运光参数以及探测光参数对转换后信号消光比特性的影响,结果表明,大的抽运光功率小的探测光功率以及合适的转换波长间隔有利于获得大的消光比。     

LaF3:Er,Yb纳米颗粒掺杂有机/无机杂化材料制备光波导放大器及特性研究

采用LaF3:Er,Yb纳米颗粒掺杂有机/无机杂化材料作为有源材料,制备了掩埋条形结构光波导放大器,研究了放大器在室温下的增益特性和波导中的频率上转换现象. 当抽运功率60 mW时,波导中明显可见绿色上转换发光,观测到Er3+从2H9/2,2H11/2,4S3/2,4F9/2到基态4I15/2跃迁分别对应的4个波长分别为405nm, 520nm, 544nm和650nm的发射峰,分析了其产生机理. 当输入信号光0.6mW,抽运功率160 mW时,在1535nm波长处获得1.5 dB/cm的相对增益.     

基于半导体光放大器中交叉增益调制效应的波长转换啁啾特性的分析

对基于半导体光放大器中交叉增益调制效应的波长转换后信号的啁啾特性进行了分析。研究了输入信号光和参考光和功率、波长、转换速率、信号光消光比以及半导体光放大器的偏置电流对转换后信号啁啾的影响。     

基于半导体光放大器的一阶IIR微波光子学滤波器及其品质因素分析

对基于半导体光放大器(SOA)环形腔结构的一阶无限冲击响应(IIR)微波光子学滤波器的品质因数(Q值)进行了实验和理论研究. 通过在有源环内置入窄带光滤波器，并调节有源环的输入光功率、SOA抽运电流、实验得到的最高Q值接近200. 理论分析表明为了得到较高的Q值，应尽可能提高信噪比和信号光的环路增益. 在考虑了 SOA中放大的自发辐射(ASE)噪声的基础上，计算了输入光功率、SOA抽运电流、环内光滤波器的带宽对Q值的影响. 数值计算的结果与实验现象基 关键词： 微波光子学滤波器 Q值')" href="#">Q值 半导体光放大器 放大的自发辐射     

A Novel Method for Wavelength Conversion with Dual-pump Four-wave Mixing in a Semiconductor Optical Amplifier

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A Novel Method for Wavelength Conversion with Dual-pump Four-wave Mixing in a Semiconductor Optical Amplifier

Using a semiconductor-fiber ring laser, a novel method for the all optical wavelength conversion based on dual-pump four-wave mixing (FWM) in a semiconductor optical amplifier (SOA) is demonstrated. For the input signal with different wavelengths, only one external pump is needed. This scheme can simplify the dual-pump FWM in SOA and has nearly constant conversion efficiency and signal-to-noise ratio (SNR) over 50nm range of wavelength shifts.     

All-optical NOT and XOR logic operation at 2.5 Gb／s based on semiconductor optical amplifier loop mirror

All-optical XOR and NOT logic operations based on semiconductor optical amplifier loop mirror (SLALOM) aresimultaneously demonstrated theoretically and experimentally. Based on a segmented semiconductor optical amplifier model, the all-optical logic operation process is simulated theoretically. In an experimental study, 2.5 Gb/s all-optical XOR operation was achieved in the output port of SLALOM, while all-optical NOT operation was achieved in the input port through a circulator at the same time.     

一种新颖的偏振不敏感的基于半导体光放大器的四波混频光波长转换方法

提出和论述了一种新颖的偏振不敏感的基于半导体光放大器的四波混频光波长转换方法。基本思想是设计和采用一种全光学偏振态转换器 ,理论上能将随机偏振态的输入信号光转换为固定偏振方向且功率基本不变的线偏振光 ,利用它控制信号光的偏振态能够克服四波混频过程所固有的偏振敏感性。将这种方法与正交偏振双抽运方法结合起来 ,能较简单地实现偏振不敏感且具有近似常数转换效率的宽带四波混频光波长转换     

All-optical XNOR and AND gates simultaneously realized in a single semiconductor optical amplifier with improved dynamics

All-optical XNOR and AND logic gates using four-wave mixing （FWM） and cross-gain modulation （XGM） in a single semiconductor optical amplifier （SOA） with improved dynamics are simultaneously realized. By numerical simulation, the effects of the input optical wave powers and injection current on the critical factors of the logic gate performances, such as the ON-OFF contrast ratio, the power-output level of the logic ＇1＇, and the difference between power outputs of the logic ＇1＇, are investigated in detail. In addition, the effect of the counter-propagating CW pump on the gain recovery is analysed.     

In-Phase Wavelength Conversion Based On Cross-Gain Modulation in Semiconductor Optical Amplifier

In-phase wavelength conversion based on cross-gain modulation in a semiconductor optical amplifier biased around critical threshold current has been demonstrated. The converted signal and the pump signal have the same bit sequence 1101011000. The stimulated emission competition between the amplification of input signals and the amplified spontaneous emission was used to illustrate the conversion mechanism. Experiment results showed that in-phase wavelength conversion can be achieved with simple structure and high output extinction ratio.     

In-Phase Wavelength Conversion Based On Cross-Gain Modulation in Semiconductor Optical Amplifier

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All-optical logic gates based on two-photon absorption in semiconductor optical amplifiers

When the two-photon absorption of a high intensity pump beam takes place in a semiconductor optical amplifier there is an associated fast phase change of a weak probe signal. A scheme to realize fast all-optical XOR logic function using two-photon absorption induced phase change has been analyzed. Rate equations for semiconductor optical amplifiers, for input data signals with high intensity, configured in the form of a Mach–Zehnder interferometer has been solved. The input intensities are high enough so that the two-photon induced phase change is larger than the regular gain induced phase change. The model shows that both XOR operation and pseudo-random binary sequence generation at 250 Gb/s with good signal to noise ratio is feasible.