石墨烯/柔性基底复合结构双向界面切应力传递问题的理论研究

界面力学性能是影响石墨烯/柔性基底复合结构整体力学性能的关键因素,因此对该结构界面切应力传递机理的研究十分必要.考虑了石墨烯和基底泊松效应的影响,本文提出了二维非线性剪滞模型.对于基底泊松比相比石墨烯较大的情况,利用该模型理论研究了受单轴拉伸石墨烯/柔性基底结构的双向界面切应力传递问题.在弹性粘结阶段,导出了石墨烯双向正应变和双向界面切应力的半解析表达式,分析了不同位置处石墨烯正应变和界面切应力的分布规律.导出了石墨烯/柔性基底结构发生界面滑移的临界应变,结果表明该临界应变低于利用经典一维非线性剪滞模型得到的滑移临界应变,并且明显受到石墨烯宽度尺寸以及基底泊松比大小的影响.基于二维非线性剪滞模型建立有限元模型(FEM),研究了界面滑移阶段石墨烯双向正应变和双向界面切应力的分布规律.与一维非线性剪滞模型的结果对比表明,当石墨烯宽度较大时,二维模型和一维模型对石墨烯正应变、界面切应力以及滑移临界应变的计算结果均存在较大差别,但石墨烯宽度很小时,二维模型可近似被一维模型代替.最后,通过与拉曼实验结果的对比,验证了二维非线性剪滞模型的可靠性,并得到了石墨烯/聚对苯二甲酸乙二醇酯(PET)基底结构的界面刚度(100 TPa/m)和界面剪切强度(0.295 MPa).     

In situ atomic force microscopy observation of hydrogen absorption/desorption by Palladium thin film

Grain structure changes in Pd thin film during hydrogen absorption and desorption were observed by in situ atomic force microscopy. The as-sputtered film had a smooth flat surface with 20-30 nm grains. Film that absorbed hydrogen showed buckling, caused by the compressive stress due to lattice expansion as Pd metal reacted with hydrogen to form the hydride. Grains on the buckles were agglomerated and deformed unlike those on flat areas beside the buckles. Film that absorbed and then desorbed hydrogen still showed some buckling; however, many buckles shrank and flattened when the compressive stress of lattice expansion was released during desorption. On both the remaining and the shrunken buckles, grain agglomeration was retained; whereas, the deformed grains reverted back to their original form. X-ray diffraction indicated compressive residual stress in the as-sputtered film and tensile residual stress in the film after hydrogen absorption/desorption. These results indicate that irreversible grain agglomeration is related to residual tensile stress in the film although agglomeration occurs only on the buckled areas.     

Plastic zone boundary and Poisson’s ratio depending on plastic loosening

A more accurate determination of the plastic zone boundary for plane strain and plane stress state is proposed. The plastic zone boundary is determined with regard to plastic loosening, given exact stress distribution and Schleicher yield criterion. The presence of mean normal stress in the Schleicher criterion ensures uniform expansion of the plastic zone. The dependence of Poisson’s ratio and constraint ratio for plastic strain on plastic loosening of material is examined. These parameters peak at the tip or in the immediate vicinity of a stress concentrator and decrease with distance from it. In a small neighborhood of the crack tip, a region is found in which Poisson’s ratio is impossible to determine from the Schleicher criterion. The size of this region is identified with the size of the region of exhausted plasticity.     

Investigation on periodic cracking of elastic film/substrate system by the extended finite element method

Multiple cracking behavior in a thin elastic film bonded to a thick elastic substrate is investigated by the extended finite element method. Stress and stress intensity factor are obtained using a periodic finite element model for the cracked film/substrate system. The influences of various parameters including crack length, film thickness, periodic crack spacing, and relative stiffness of the substrate on the stress and stress intensity factor are discussed in detail. It is demonstrated that the effects of geometric parameters are more sensitive than that of material property. In particular, the crack spacing has a saturation value due to interactions of neighboring cracks and relief of tensile stress in the film. The film/substrate couple with multiple periodic cracks can exhibit a positive potential in improving the durability of the film/substrate system.     

Fabrication processing effects on the microstructure and morphology of erbium film

The effect of substrate temperature on the microstructure and the morphology of erbium film are systematically investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM). All the erbium films are grown by electron-beam vapor deposition (EBVD). A novel preparation method for observing the cross-section morphology of the erbium film is developed. The films deposited at 200°C have (002) preferred orientation, and the films deposited at 450°C have a mixed (100) and (101) texture, due to the different growth mechanisms of surface energy minimization and recrystallization, respectively. The peak positions and the full widths at half maximum (FWHMs) of erbium diffraction lines (100), (002), and (101) shift towards higher angles and decrease with the increasing substrate temperature in a largely uniform manner, respectively. Also, the lattice constants decrease with increasing temperature. The transition in the film stresses can be used to interpret the changes in peak positions, FWHMs, and lattice constants. The stress is compressive for the as-growth films, and is counteracted by the tensile stress formed during the process of temperature cooling to room temperature. The tensile stress mainly originates from the difference in the coefficients of thermal expansion of the substrate-film couple.     

硅衬底GaN蓝色发光材料转移前后应力变化研究

利用外延片压焊和湿法腐蚀技术将硅衬底上生长的InGaN多量子阱发光二极管(LED)薄膜材料转移到了新衬底上. 研究结果表明, 转移后的LED薄膜中GaN层受到的张应力变小,InGaN层受的压应力变大. 去除转移后LED薄膜中过渡层后,GaN层受到的张应力变大,而铟镓氮层受到的压应力基本不变. 将转移后的薄膜做成垂直结构的LED芯片后,其光电性能明显改善. 关键词： GaN 发光二极管 硅衬底 应力     

Fabrication processing effects on microstructure and morphology of erbium film

The effects of substrate temperature on the microstructure and the morphology of erbium film are systematically investigated by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). All the erbium films are grown by the electron-beam vapor deposition (EBVD). A novel preparation method for observing the cross-section morphology of the erbium film is developed. The films deposited at 200 ℃ have (002) preferred orientation, and the films deposited at 450 ℃ have mixed (100) and (101) texture, which are due to the different growth mechanisms of surface energy minimization and recrystallization, respectively. The peak positions and the full widths at half maximum (FWHMs) of erbium diffraction lines (100), (002), and (101) shift towards higher angles and decrease with the increasing substrate temperature in a largely uniform manner, respectively. Also, the lattice constants decrease with the increasing temperature. The transition in the film stresses can be used to interpret the changes in peak positions, FWHMs, and lattice constants. The stress is compressive for the as-growth films, and is counteracted by the tensile stress formed during the process of temperature cooling down to room temperature. The tensile stress mainly originates from the difference in the coefficients of thermal expansion of substrate--film couple.     

Analysis of film strain and stress in a film-substrate cantilever system

The bending problem of a magnetic film-nonmagnetic substrate cantilever system is studied by using the principle of energy minimization. Emphasis is placed on the analysis of geometrical and physical parameter dependence of the neutral plane, internal film stress and strain of the cantilever system, and then the influence of such a parameter on the bending characteristic is presented. The results indicate, owing to the anisotropic expanding feature of the magnetostriction, that the neutral plane is generally anisotropic, and moves downwards rapidly with the increasing thickness ratio. Meanwhile, the bounding rigidity of substrate on the film will decrease with the increasing thickness ratio, and thus release the film stress, i.e., it decreases, but the film strain increases. The effect of Poisson’s ratio of the materials on the film strain, the stress and the neutral plane in the direction transverse to the magnetization is prominent. For the strain and the stress in the magnetization, however, the role of Poisson’s ratio is inconspicuous. This property is due to the initiative elongating (or contracting) feature of the magnetic film along its magnetization. Supported by the National Natural Science Foundation of China (Grant No. 10762001), the Key Project of the Chinese Ministry of Education (Grant No. 206024), and the Program for New Century Excellent Talents in University of China (Grant No. NCET-2005-0272)     

铁电薄膜漏电流的应变调控

基于密度泛函理论的第一性原理并结合非平衡格林函数, 探讨了应变对 BaTiO₃ 铁电薄膜漏电流的影响规律.研究表明,压应变能有效地抑制BaTiO₃ 铁电薄膜漏电流, 特别是当压应变为4%时,其漏电流相对无应变状态降低了近10 倍.通过考察体系的透射系数和电子态密度发现: 一方面压应变状态下铁电隧道结的透射几率要比张应变时小,特别是在费米面附近;另一方面随着张应变过渡至压应变时,价带的位置逐渐向低能区移动而导带向高能区移动,导致了其带隙的增大, 从而有效抑制了漏电流. 本研究为寻找抑制铁电薄膜漏电流,提高铁电薄膜及铁电存储器的性能提供合适的方法. 关键词： 铁电薄膜 双轴应变 漏电流 第一性原理     

柔性基周期性厚度梯度薄膜的应变效应

可控的表面微结构在柔性电子、仿生器件和能源材料等方面均具有重要的应用价值.本文采用编织铜网作为掩模板,利用磁控溅射技术在柔性聚二甲基硅氧烷(PDMS)基底上制备具有周期分布的厚度梯度金属银薄膜,研究了薄膜在单轴压缩/拉伸过程中的形貌演化规律.实验发现,在单轴机械载荷作用下,银薄膜表面将形成相互垂直的条纹褶皱和多重裂纹.膜厚的梯度变化调制了薄膜的面内应力分布,导致褶皱在膜厚较小处率先形成,并逐渐扩展到膜厚较大区域,而裂纹则基本限定在膜厚较小区域.基于应力理论和有限元计算,对周期性厚度梯度薄膜的褶皱和裂纹的形貌特征、演化行为和物理机制进行了深入分析.该研究将有助于加深对非均匀薄膜体系的应变效应的理解,并有望通过梯度薄膜的结构设计在柔性电子等领域获得应用.     

Computational and experimental study of a melt-hardened zone on a roller modified by wide-band laser treatment

A three-dimensional finite element model has been developed to simulate the wide-band laser remelting process and predict the thermal and mechanical properties in the melt-hardened zone. The simulation of the laser remelting process was performed using the nonlinear thermo-mechanical properties, based on a wide-band heat source model. The temperature fields, phase transformations, hardness and residual stress distributions in the melt-hardened zone were analyzed. In the remelting zone, the transformed volumetric percentage of martensite is beyond 80% and the excessive transformed martensitic structure greatly affects the mechanical properties in the melt-hardened zone with its volumetric expansion effect. After remelting, the hardness can be improved and the residual stress distributed within the melted zone is mainly of the compressive type, while the tensile stress in the heat-affected zone (HAZ) may cause the initiation of cracks. The computational results are in good agreement with experimental measurements.     

不同应变率下两种岩石的压缩破碎特征试验研究

为了研究不同岩石在不同应变率下压缩时裂纹的产生规律及破坏模式,将石灰岩和红砂岩制成试件,研究其在不同应变率和受力模式下裂纹的形成模式。开展了两种岩石的准静态压缩和动态压缩试验,采用高速摄影机记录了裂纹的产生和破坏模式。对两种岩石试件的裂纹形态进行对比,基于岩石的物理性质、受力状态、能量演化分析,得到了在不同应变率下压缩时产生差异性的原因。结果表明:准静态压缩下岩石试件受压的破坏模式也会因应变率的不同而存在差异,并且破坏模式的差异对岩石试件的抗压强度将产生显著的影响;从能量演化的角度分析,入射能量的大小将会决定岩石试样动态抗压强度曲线是否出现起伏;动态压缩时,裂纹的周向扩展速度与岩石抗压强度呈正相关。     

基体对应力诱导的纳米晶W膜开裂行为的影响

采用磁控溅射方法同时在Si(100)和聚酰亚胺(PI)基体上沉积W膜,对比研究不同基体约束对纳米晶W膜微观结构及应力诱导的开裂行为的影响.结果发现,在两种基体上W膜的裂纹形态明显不同.在Si基体上W膜的裂纹呈楔形,而在PI基体上W膜的裂纹呈半圆柱形凸起于薄膜表面.这种裂纹形态的差异源于两种基体上W膜的变形机理不同.在刚性Si基体上,W膜的裂纹扩展是通过晶粒平面内的转动实现的,而在柔性PI基体上W膜裂纹扩展是通过排列晶粒在平面内、外的转动协调完成的.分析表明,两种截然不同的开裂行为与不同基体上薄膜内应力的变 关键词： W膜 残余应力 裂纹 晶粒     

Strain status of epitaxial Ge film on a Si (001) substrate

An epitaxial Ge film was grown on a Si (001) substrate via a two-step process through the molecular beam epitaxy technique. The strain status of non-annealed and annealed epitaxial Ge films was determined by X-ray diffraction, Raman spectroscopy, and a combination of high-resolution transmission electron microscopy and geometric phase analysis. Results showed that the strain in non-annealed and annealed epitaxial Ge films is nonhomogeneous from the Ge/Si interface to the Ge film surface. The strain parallel to the interface in the non-annealed epitaxial Ge film is compressive; this strain reaches a minimum near the surface and a maximum at the interface. By contrast, the strain parallel to the interface in the annealed epitaxial Ge film is tensile; this strain reaches a minimum at the interface and a maximum near the surface.     

The surface cracking behavior in air plasma sprayed thermal barrier coating system incorporating interface roughness effect

The objective of this work is to understand the effect of interface roughness on the strain energy release rate and surface cracking behavior in air plasma sprayed thermal barrier coating system. This is achieved by a parameter investigation of the interfacial shapes, in which the extended finite element method (XFEM) and periodic boundary condition are used. Predictions for the stress field and driving force of multiple surface cracks in the film/substrate system are presented. It is seen that the interface roughness has significant effects on the strain energy release rate, the interfacial stress distribution, and the crack propagation patterns. One can see the completely different distributions of stress and strain energy release rate in the regions of convex and concave asperities of the substrate. Variation of the interface asperity is responsible for the oscillatory characteristics of strain energy release rate, which can cause the local arrest of surface cracks. It is concluded that artificially created rough interface can enhance the durability of film/substrate system with multiple cracks.     

In situ measurement of the surface stress evolution during magnetron sputter-deposition of Ag thin film

We measured the evolution of in situ surface stress of Ag thin film during the magnetron sputter deposition. The measurement of force per width of Ag thin film showed that both the surface state and surface stress of Ag layer can be controlled through the variation of the deposition conditions such as the deposition temperature and rate. At room temperature, the force per width curve of Ag film deposited to 1 Å/s showed a typical curve consisting of three stages of surface stress. A brief presence of initial compressive stage and broad tensile maximum resulting in a compressive state had a tendency to disappear with increasing the deposition temperature. Meanwhile, a development of final compressive stage was more at higher temperature. Similar effect was observed but less obvious on increasing the deposition rate.     

Investigations on ion implantation-induced strain in rotated Y-cut LiNbO_3 and LiTaO_3

The monocrystalline LiNbO_3(LN) and LiTaO_3(LT) plates have been qualified as a kind of material platform for high performance RF filter that is considerable for the 5G communication.LN and LT thin films are usually transferred on handle wafers by combining ion-slicing and wafer bonding technique to form a piezoelectric on insulator (POI) substrate.The ion implantation is a key process and the implantation-induced strain is essential for the layer transfer.Here,we reported the strain profile of ion implanted rotated Y-cut LN and LT.The ion implantation generates the out-of-plane tensile strain of the sample surface and (006) plane,while both the tensile and compressive strain are observed on the (030) plane.The implanted ions redistributed due to the anisotropy of LN and LT,and induce the main tensile normal to the (006) plane.Meanwhile,the (030) planes are contracted due to the Poisson effect with the interstitial ions disturbing and mainly show a compressive strain profile.     

应力作用下EuTiO3铁电薄膜电热效应的唯象理论研究

基于Laudau-Devonshire的热动力学模型, 计算了EuTiO₃铁电薄膜材料的电热效应. 结果显示在外加应力的调控下, 电极化、电热系数以及绝热温差都会随之变化. 外加垂直于表面的张应力加大, 薄膜的相变温度升高, 绝热温差增加, 最大绝热温差所对应的工作温度向高温区移动. 对于二维平面失配应变u_m =-0.005的薄膜, 当外加张应力σ₃ = 5 GPa时, 其最大电热系数为1.75×10^-3 C/m²·K, 电场变化200 MV/m 时室温下绝热温差ΔT 的最大值可达到14 K 以上, 绝热温差ΔT ≥13 K 的工作温区超过120 K, 表明可以通过调控外部应力来获取室温时较大的绝热温差. 此结果预示着铁电EuTiO₃ 薄膜在室温固态制冷方面可能具有较好的应用前景.     

Analysis of crack propagation data for a strain ageing and a stabilized mild steel tested under R=0 and R=−1 loading conditions

Comparative studies of crack propagation in a strain ageing and a stabilized mild steel were carried out under axial loadings of the R = 0 and R = ?1 types. The results show the rate of fatigue crack propagation is dependent on both the tensile and the compressive stresses in the fatigue cycles, the compression stresses being less effective than the equivalent tensile stresses in causing crack growth. An equation is presented relating the rate of fatigue crack growth to a stress intensity range which is factored to allow for the variations in fatigue damage associated with the tensile and compressive parts of the stress cycle.     

Thin film stress measurement by instrumented optical fibre displacement sensor

Residual stress can adversely affect the mechanical, electronic, optical and magnetic properties of thin films. This work describes a simple stress measurement instrument based on the bending beam method together with a sensitive non-contact fibre optical displacement sensor. The fibre optical displacement sensor is interfaced to a computer and a Labview programme enables film stress to be determined from changes in the radius of curvature of the film-substrate system. The stress measurement instrument was tested for two different kinds of thin film, hard amorphous carbon nitride (CN) and soft copper (Cu) films on silicon substrates deposited by RF magnetron sputtering. Residual stress developed in 500 nm thick CN thin films deposited at substrate temperatures in the range 50-550 °C was examined and it was found that stress in CN films decreased from 0.83 to 0.44 GPa compressive with increase of substrate temperature. Residual stress was found to be tensile (121 MPa) for Cu films of thickness 1500 nm deposited at room temperature.