共查询到19条相似文献,搜索用时 78 毫秒
1.
2.
3.
4.
5.
6.
原子尺度表面吸附Au原子的物理化学性质对研究纳米器件的制备以及表面催化等起着非常重要的作用.利用调频开尔文探针力显微镜研究了室温下Au在Si(111)-(7×7)表面吸附的电荷分布的特性.首先,利用自制超高真空开尔文探针力显微镜成功得到了原子尺度Au在Si(111)-(7×7)不同吸附位的表面形貌与局域接触电势差(LCPD);其次,通过原子间力谱与电势差分析了Au/Si(111)-(7×7)特定原子位置的原子特性,实现了原子识别;并通过结合差分电荷密度计算解释了Au/Si(111)-(7×7)表面间电荷转移与Au的吸附特性.结果显示,Au原子吸附有单原子和团簇形式.其中,Au团簇以6个原子为一组呈六边形结构吸附于Si(111)-(7×7)的层错半单胞内的3个中心原子位;单个Au原子吸附于非层错半单胞的中心顶戴原子位;同时通过电势差测量得知单个Au原子和Au团簇失去电子呈正电特性.表面差分电荷密度结果显示金在吸附过程中发生电荷转移,失去部分电荷,使得吸附原子位置上的功函数局部减少.在短程力、局域接触势能差和差分电荷密度发生变化的距离范围内,获得了理论和实验之间的合理一致性. 相似文献
7.
在超高真空中采用分子束外延(molecular beam epitaxial)技术进行C60分子在硅(111)-7×7表面的生长,并利用扫描隧道显微镜进行原位研究.室温下,相对于无层错半胞(unfaulted half unit cell),C60更易于吸附在有层错半胞(faulted half unit cell).表面台阶处的电子悬挂键密度最高,通过控制温度和时间进行退火处理后,C60分子会向着台阶的方向扩散并聚集.测量分子在不同吸附位
关键词:
60分子')" href="#">C60分子
分子束外延
Si(111)-7×7
超高真空扫描隧道显微镜 相似文献
8.
利用扫描隧道显微镜和扫描隧道谱(STM/STS)及单原子操纵,系统研究了单个钴原子(Co) 及其团簇在Rh (111)和Pd (111)两种表面的吸附和自旋电子输运性质. 发现单个Co原子在Rh (111)上有两种不同的稳定吸附位,分别对应于hcp和fcc空位, 他们的高度明显不同,在针尖的操纵下单个Co原子可以在两种吸附位之间相互转化. 在这两种吸附位的单个Co原子的STS谱的费米面附近都存在很显著的峰形结构, 经分析认为Rh (111)表面单个Co原子处于混价区,因此这一峰结构是d轨道共振 和近藤共振共同作用的结果.对于Rh (111)表面上的Co原子二聚体和三聚体, 其费米面附近没有观测到显著的峰,这可能是由于原子间磁交换相互作用 和原子间轨道杂化引起的体系态密度改变所共同导致.与Rh (111)表面不同, 在Pd (111)表面吸附的单个Co原子则表现出均一的高度.并且对于Pd (111)表面所有 单个Co原子及其二聚体和三聚体,在其STS谱的费米面附近均未探测到显著的电子结构, 表明Co原子吸附于Pd (111)表面具有与Rh (111)表面上不同的原子-衬底相互作用与自旋电子输运性质. 相似文献
9.
10.
11.
Low energy electron diffraction (LEED) patterns for the GeSi(111)-5 × 5 surface are reported and compared to those for the Si(111)-7 × 7 surface. Parallels between the observed LEED patterns are explained by a structural analogy between GeSi(111)-5 × 5 and Si(111)-7 × 7 surfaces. Both the (5 × 5) and (7 × 7) patterns are shown to be consistent with structural models of the triangle-dimer type previously proposed for Si(111)-7 × 7 surface. 相似文献
12.
We have observed the dependence of the scanning tunneling microscopy (STM) imaged atom intensity within the (7x7) unit cell on stepped Si(111) as a function of the tunneling voltage. Pronounced differences from the corresponding atom intensity on the flat surface are observed for the contrast of atoms on the low versus the high side of the step and for the contrast between the faulted versus unfaulted subcells of the (7x7) structure. These differences can be accounted for by changes in the electronic structure within the (7x7) subcells adjacent to the step. Calculations of the local density of states and the STM images using a tight-binding method are in excellent agreement with the experimental results. 相似文献
13.
High-resolution electron energy-loss spectroscopy and monochromatic low-energy electron diffraction have been applied to the study of the Si(111)(7 × 7) surface and the thermally-quenched Si(111) (1 × 1) surface. For the (1 × 1) surface, the inelastic continuum, observed for the (7 × 7) surface, due to the Drude absorption of electrons in the dangling-bond surface states is not existent, which indicates that the surface-state band associated with the dangling-bonds of the (1 × 1) surface is insulating. The observed electronic transitions indicate that the (7 × 7) and (1 × 1) surfaces have similar local band geometries and that they differ only in long-range order. The (1 × 1) surface is considered to have a disordered structure. The defect model is favored for the (7 × 7) structure. 相似文献
14.
We present the first direct experimental evidence for a large surface influenced core-exciton effect on silicon. The Si(111) 7 × 7 L2,3 absorption edge has been studied with core-level electron energy loss (ELS) and X-ray photoemission spectroscopy (XPS). An excitonic shift of ~1–2 eV have been found for transitions from Si(2p) to empty surface states. 相似文献
15.
16.
Lantz MA Hug HJ van Schendel PJ Hoffmann R Martin S Baratoff A Abdurixit A Guntherodt H Gerber C 《Physical review letters》2000,84(12):2642-2645
A low temperature scanning force microscope (SFM) operating in a dynamic mode in ultrahigh vacuum was used to study the Si(111)- (7x7) surface at 7.2 K. Not only the twelve adatoms but also the six rest atoms of the unit cell are clearly resolved for the first time with SFM. In addition, the first measurements of the short range chemical bonding forces above specific atomic sites are presented. The data are in good agreement with first principles computations and indicate that the nearest atoms in the tip and sample relax significantly when the tip is within a few A of the surface. 相似文献
17.
Q.D. Jiang D. Fujita H.Y. Sheng Z.C. Dong H. Nejoh 《Applied Physics A: Materials Science & Processing》1997,64(6):619-622
Received: 16 August 1996/Accepted: 6 March 1997 相似文献
18.
Scanning tunneling microscopy and temperature-programmed desorption have been used to investigate the chemistry of water on Si(111)-(7 × 7) substrates which were misoriented 2° toward the [
10] direction. Upon room temperature exposure to water, the adatoms of the (7 × 7) unit cell are still evident even after high exposures, implying that major modifications of the substrate do not occur. At high coverages, the distribution of reacted adatoms shifts from one controlled by dissociative adsorption across the adatom-rest atom pair to a statistical distribution based on the availability of dangling bonds. Desorption of the oxide layer which remains after water adsorption and the desorption of hydrogen have also been characterized. The oxide desorption occurs along well-defined wavefronts which originate at step edges and advance in directions consistent with the underlying substrate symmetry, primarily the [
2] direction (i.e. the wave vector points in the [
2] direction). In regions of the surface where the oxide has desorbed, the (7 × 7) unit cell can be seen clearly. Vacancies resulting from the loss of surface silicon atoms (via the etching) coalesce into islands in the clean regions of the terraces, but unlike desorption of oxide layers from Si(100), the desorption does not occur from the boundaries of these vacancy islands. 相似文献