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Silicon wafers were implanted with 40 keV B+ ions and then with 50 keV N+ or 100 keV Ar+ ions to doses from 1.2 x 1014 to 1.2 x 1015 cm–2. The implanted samples were studied using the Hall effect and standard van der Pauw methods. The dependences of the sheet resistivity and the sheet concentration of charge carriers on the annealing temperature in the range from 700 to 1300 K were obtained. Models describing the influence of additional implantation of nitrogen and argon ions on the process of boron electrical activation during annealing are proposed.  相似文献   

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The three-particle reactionp+d→p+p+n has been investigated at a deuteron bombarding energy of 52.0 MeV. Single counter experiments as well as coincidence measurements have been carried out. The laboratory angular distribution of the break-up reaction and the total break-up cross-section have been determined by means of the single counter experiments. The angular distribution for final-state interacting neutron-proton pairs was obtained by means of coincidence measurements. The coincidence experiments provide a strong evidence for very different shapes of the angular distributions for neutron-proton singlet and triplet final-state interaction.  相似文献   

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The limit theorem of Low is used to construct the amplitude of the soft bremsstrahlung accompanying the reaction p + p + + d. The obtained amplitude is expressed in terms of the amplitudes of the nonradiative process.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 29–32, December, 1970.  相似文献   

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We report the first observation of the reactions Au + Au → Au + Au + ρ 0 and Au + Au → Au* + Au* + ρ 0 with the STAR detector. The ρ are produced at small perpendicular momentum, as expected if they couple coherently to both nuclei. We discuss models of vector meson production and the correlation with nuclear breakup, and present a fundamental test of quantum mechanics that is possible with the system.  相似文献   

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