耦合电磁场对石墨烯量子磁振荡的影响

我们研究了包含自旋轨道耦合与杂质散射在内的石墨烯量子磁振荡对外加电磁场的响应.我们发现,石墨烯中自旋轨道耦合、电磁场以及边界共同修正了朗道能谱,且当电场与磁场比值超过某一临界值时,量子磁振荡会突然消失,这与非相对论二维电子气的情况显著不同.这种现象可以通过朗道量子化轨道由封闭转化为开放的半经典理论来解释.此外,我们还发现杂质散射和温度的共同作用会使得磁振荡振幅衰减.我们的结果可用于分析石墨烯及其类似结构(硅烯、锗烯、锡烯等)的费米能级与朗道能谱的相互作用,进而探测自旋轨道耦合引起的能隙.     

InAs量子环中类氢杂质能级

在有效质量近似下,利用微扰法研究了InAs量子环内类氢杂质基态及低激发态的能级分布。受限势采用抛物形势,在二维平面极坐标下,用薛定谔方程的精确解析解进行计算。数值计算结果显示,电子能级敏感地依赖于量子环半径,能级存在极小值,这是由于限制势采用抛物势的结果。如果减小环的半径,可以增加能级间距。第一激发态类氢杂质能级的简并没有消除,n≥2时简并的能级发生分裂并且间距随半径的增大而增大。电子能级间距还敏感地依赖于角频率并随角频率的增大而增大。第一激发态的简并没有消除,第二激发态的简并被部分地消除。在计算InAs量子环中类氢杂质的基态和低激发态的能级时,角频率改变的影响也是很深刻的。文章结果对研究量子环的光跃迁及光谱结构有重要指导意义。     

锯齿型石墨烯纳米窄带中量子霍尔体系的电场调控

应用含自洽格点在位库仑作用的Kane-Mele模型,研究锯齿型石墨烯纳米窄带平面内横向电场对边界带能带结构和量子自旋霍尔(QSH)体系的影响.研究结果显示,当电场强度较弱时,外加电场的方向可以调控自旋向下的两个边界带一起朝不同方向移动,导致波矢q=0.5处自旋向下的两个纯边界态的能量简并劈裂方向可由电场调控;当电场强度进一步增强到超过0.69 V/nm,自旋向下的两个边界带出现较大带隙,能带反转,而自旋向上的电子结构无能隙,系统呈现半金属性,同时QSH体系不再是B类.特别当电场强度为1.17 V/nm时,在自旋向下能带的能隙中,q=0.5处存在自旋向上的纯边界态,意味着在8格点边界处可以产生自旋向上的纯边界电流.当电场强度持续增加时,QSH系统从B类到C类经历3个阶段的变化.当电场强度超过1.42 V/nm后,自旋向上的两个边界带也出现能带反转,分别成为导带和价带,系统成为C类的普通量子霍尔体系.     

激子自旋弛豫对简并量子点发射光子对纠缠度的影响

利用粒子数运动方程和量子回归理论，计算了单个半导体量子点双激子体系脉冲激发下粒子在各能级间辐射跃迁的二阶交叉相关函数以及系统发射光子对的偏振密度矩阵.分析了激子态能级简并量子点体系发射光子对偏振纠缠特性，讨论了纠缠度随激子态间自旋弛豫的变化关系.研究表明，激子自旋弛豫会破坏该系统发射光子对的纠缠度. 关键词： 纠缠光子对 半导体量子点 二阶相关函数     

门电压控制的硅烯量子线中电子输运性质

硅烯是由单层硅原子形成的二维蜂窝状晶格结构,具有石墨烯类似的电学性质,由于硅烯中存在比较强的自旋轨道耦合而备受关注.本文利用非平衡格林函数方法研究了门电压控制的硅烯量子线中电子输运性质和能带结构.研究发现,只有在较强的门电压下,而且硅烯量子线具有较好的锯齿形或扶手椅形边界而不存在额外硅原子时,硅烯量子线中才存在无能隙的自旋极化边缘态.另外,计算结果表明这种门电压控制的硅烯量子线中边缘态在每个能谷处自旋是极化的.这些计算结果将为实验上利用电场制作硅烯纳米结构提供理论支持.     

有限元法计算GaN/AlN量子点结构中的电子结构

根据有效质量理论单带模型，采用有限元方法(FEM)计算了GaN/AlN量子点结构中的电子结构，分析了应变和极化对电子结构的影响，计算了不同尺寸的量子点的能级，分析了量子点的大小对电子能级的影响. 结果表明，形变势和压电势提升了电子能级，而且使简并能级分裂. 随着量子点尺寸的增大，量子限制能减小，而压电势能起到更显著的作用，使电子的能级降低，吸收峰发生红移. 关键词： GaN/AlN量子点结构 有效质量理论 电子能级     

光子Ising机的前景光明

<正>统计物理中的Ising模型最初是用来处理铁磁体问题的。在这一模型中,向上和向下两种状态的自旋占据正方形格点位置,每一个自旋的能量取决于它跟周围自旋的相互作用。对于铁磁系统,每个自旋都倾向于跟周围近邻自旋平行排列。     

有限元法计算GaN/AIN量子点结构中的电子结构

根据有效质量理论单带模型,采用有限元方法(FEM)计算了GaN/AlN量子点结构中的电子结构,分析了应变和极化对电子结构的影响,计算了不同尺寸的量子点的能级,分析了量子点的大小对电子能级的影响.结果表明,形变势和压电势提升了电子能级,而且使简并能级分裂.随着量子点尺寸的增大,量子限制能减小,而压电势能起到更显著的作用,使电子的能级降低,吸收峰发生红移.     

有限深抛物势量子环类氢杂质能级

在有效质量近似下,用微扰法研究InAs量子环内类氢杂质基态及低激发态的能级.受限势采用有限深抛物型势,在二维平面极坐标下,用薛定谔方程的解析解计算.数值结果显示:在抛物势平台区,类氢杂质能级不随电子径向坐标改变,并具有二维氢原子能级的特征;在有限深抛物势区,电子能级敏感地依赖于量子环半径,能级存在极小值,这是由于限制势采用抛物势的结果.如果减小环的半径,可以增加能级间距;简并能级发生分裂并且间距随半径增大而增大,第一激发态的简并没有消除,第二激发态的简并被部分地消除.本文结果对研究量子环的光跃迁及光谱结构有指导意义.     

不均匀磁场和垂直电场作用下单层硅烯中的朗道能级

从量子力学的基本概念出发,借助特殊函数方程理论,研究了在不均匀磁场和垂直电场作用下单层硅烯中的朗道能谱.结果表明外电场调制的自旋轨道耦合作用使得该体系中的朗道能级结构表现出一些新奇的特征.     

电子的谷自由度

电子在晶格周期性势场影响下的运动遵循布洛赫定理. 布洛赫电子除了具有电荷和自旋两个内禀自由度外, 还有其他内禀自由度. 能带色散曲线上的某些极值点作为谷自由度, 具有独特的电子结构和运动规律. 本文从布洛赫电子的谷自由度出发, 简单介绍传统半导体的谷电子性质研究现状, 并重点介绍新型二维材料体系, 如石墨烯、硅烯、硫族化合物等材料中谷相关的物理特性. 有效利用谷自由度的新奇输运特性, 将其作为信息的载体可以制作出新颖的纳米光电子器件, 并有望造就下一代纳电子器件的新领域, 即谷电子学(valleytronics).     

Effective Hamiltonian of silicene in the presence of electric and magnetic fields

An effective Hamiltonian of silicene in the neighborhood of Dirac points in the presence of electric and magnetic fields perpendicular to the plane of the film is constructed on the basis of symmetry analysis. Numerical coefficients of various terms in the Hamiltonian are obtained by the tight binding method in the basis sp ³ d ⁵ s* with regard to the interaction with one nearest neighbor. This method was developed in the previous paper [1] in the case of a sublattice displacement of 0.44 Å, which corresponds to the theoretical value of displacement obtained from first principles for a free film of silicene. The effect of the displacement of sublattices on the orientation of spin and pseudospin in silicene is analyzed. The Hamiltonian obtained allows one to consider spin and electron transport for charge carriers with energy less than 0.5 eV. The orbital motion of electrons in an external magnetic field perpendicular to the film is analyzed in detail.     

Spontaneously gapped ground state in suspended bilayer graphene

Bilayer graphene bears an eightfold degeneracy due to spin, valley, and layer symmetry, allowing for a wealth of broken symmetry states induced by magnetic or electric fields, by strain, or even spontaneously by interaction. We study the electrical transport in clean current annealed suspended bilayer graphene. We find two kinds of devices. In bilayers of type B1 the eightfold zero-energy Landau level is partially lifted above a threshold field revealing an insulating ν=0 quantum-Hall state at the charge neutrality point. In bilayers of type B2 the Landau level lifting is full and a gap appears in the differential conductance even at zero magnetic field, suggesting an insulating spontaneously broken symmetry state. Unlike B1, the minimum conductance in B2 is not exponentially suppressed, but remains finite with a value G is < or approximately equall to e(2)/h even in a large magnetic field. We suggest that this phase of B2 is insulating in the bulk and bound by compressible edge states.     

Topological phases of silicene and germanene in an external magnetic field: Quantitative results

We investigate the topological phases of silicene and germanene that arise due to the strong spin–orbit interaction in an external perpendicular magnetic field. Below and above a critical field of 10 T, respectively, we demonstrate for silicene under 3% tensile strain quantum spin Hall and quantum anomalous Hall phases. Not far above the critical field, and therefore in the experimentally accessible regime, we obtain an energy gap in the meV range, which shows that the quantum anomalous Hall phase can be realized experimentally in silicene, in contrast to graphene (tiny energy gap) and germanene (enormous field required). (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

点缺陷扶手型石墨烯量子点的电子性质研究

基于有限差分方法, 数值求解了Dirac方程, 研究了垂直磁场下的点缺陷扶手型 石墨烯 量子点的能谱结构, 分析了尺寸大小对带隙的影响. 与无磁场时具有一定带隙 (带隙的大小与半径成反比) 的量子点相比, 在外加有限磁场下, 能谱中出现朗道能级, 最低朗道能级能量为零并与磁场强度无关, 并且朗道能级的简并度随着磁场的增加而增加. 进一步的计算表明, 最低朗道能级的简并度与磁场成线性关系, 与半径的平方成线性关系. 本文工作对基于石墨烯量子点的器件设计具有一定的指导意义.     

Spin and valley dependent line-type resonant peaks in electrically and magnetically modulated silicene quantum structures

A barrier with a tunable spin-valley dependent energy gap in silicene could be used as a spin and valley filter. Meanwhile, special resonant modes in unique quantum structure can act as energy filters. Hence we investigate valley and spin transport properties in the potential silicene quantum structures, i.e., single ferromagnetic barrier, single electromagnetic barrier and double electric barriers. Our quantum transport calculation indicates that quantum devices of high accuracy and efficiency (100% polarization), based on modulated silicene quantum structures, can be designed for valley, spin and energy filtering. These intriguing features are revealed by the spin, valley dependent line-type resonant peaks. In addition, line-type peaks in different structure depend on spin and valley diversely. The filter we proposed is controllable by electric gating.     

Assessment of bilayer silicene to probe as quantum spin and valley Hall effect

Silicene takes precedence over graphene due to its buckling type structure and strong spin orbit coupling. Motivated by these properties, we study the silicene bilayer in the presence of applied perpendicular electric field and intrinsic spin orbit coupling to probe as quantum spin/valley Hall effect. Using analytical approach, we calculate the spin Chern-number of bilayer silicene and then compare it with monolayer silicene. We reveal that bilayer silicene hosts double spin Chern-number as compared to single layer silicene and therefore accordingly has twice as many edge states in contrast to single layer silicene. In addition, we investigate the combined effect of intrinsic spin orbit coupling and the external electric field, we find that bilayer silicene, likewise single layer silicene, goes through a phase transitions from a quantum spin Hall state to a quantum valley Hall state when the strength of the applied electric field exceeds the intrinsic spin orbit coupling strength. We believe that the results and outcomes obtained for bilayer silicene are experimentally more accessible as compared to bilayer graphene, because of strong SO coupling in bilayer silicene.     

Band gap engineering in silicene: A theoretical study of density functional tight-binding theory

In this work, we performed first principles calculations based on self-consistent charge density functional tight-binding to investigate different mechanisms of band gap tuning of silicene. We optimized structures of silicene sheet, functionalized silicene with H, CH₃ and F groups and nanoribbons with the edge of zigzag and armchair. Then we calculated electronic properties of silicene, functionalized silicene under uniaxial elastic strain, silicene nanoribbons and silicene under external electrical fields. It is found that the bond length and buckling value for relaxed silicene is agreeable with experimental and other theoretical values. Our results show that the band gap opens by functionalization of silicene. Also, we found that the direct band gap at K point for silicene changed to the direct band gap at the gamma point. Also, the functionalized silicene band gap decrease with increasing of the strain. For all sizes of the zigzag silicene nanoribbons, the band gap is near zero, while an oscillating decay occurs for the band gap of the armchair nanoribbons with increasing the nanoribbons width. At finally, it can be seen that the external electric field can open the band gap of silicene. We found that by increasing the electric field magnitude the band gap increases.     

Valley-dependent electron transport in ferromagnetic/normal/ferromagnetic silicene junction

The electron transport through ferromagnetic/normal/ferromagnetic silicene junction with an induced energy gap is investigated in this work. The energy gap can be tuned by applying electric field or exchange fields due to the buckled structure of silicene. We analyze the local electric field, exchange field, length of normal region-dependence transmission probabilities of four groups and valley conductance. These transmission probabilities and valley conductance can be turned on or off by adjusting the local electric field and exchange field. In particular, a fully valley polarized conductance with 80% transmission is found in this junction, which can be caused by the interplay of valley-dependent massive Dirac electron, the exchange potential and the on-site potential difference of sublattices. Our findings will benefit applications in silicene-based high performance nano-electronics.     

外场调控下硼磷烯量子点的电子结构和光学性质研究

采用紧束缚近似方法对锯齿状六边形硼磷烯量子点在平面电场和垂直磁场调控下的电子结构和光学性质进行了研究. 研究表明,硼磷烯量子点作为直接带隙半导体,在无外加电场和磁场作用时,能隙不随尺寸的改变而变化. 在平面电场调控下,能隙随电场强度的增加逐渐减小直至消失,平面电场方向几乎不会对硼磷烯量子点体系产生影响, 且随量子点尺寸的增大,能隙消失所需电场强度逐渐减小. 在垂直磁场调控下,表现为体态的能级在磁场作用下形成朗道能级,而能隙边缘处的朗道能级近似为一个平带,不随磁通量的改变而变化,态密度主要分布于朗道能级处. 另外,垂直磁场作用下的光吸收主要是由朗道能级之间的跃迁引起的.