Phase diagrams of YBa2Cu4O8 and YBa2Cu3.5O7.5 in the pressure range 1 bar≤PO2≤3000 bar

The P-T-x phase diagram of the pseudobinary system (Y-Ba-Cu-O)-O₂ has been further investigated in the oxygen pressure range between 1 and 3000 bar. The stability ranges of the phases YBa₂Cu₄O₈ (124), YBa₂Cu_3.5O_7.5−x (123.5) and YBa₂Cu₃O_7−x (123) have been determined. Long duration experiments showed that the 123 phase is not stable at least down to 7 bar≤P≤20 bar oxygen and 900°C. It is not clear whether at lower pressures and temperatures the 123 phase is thermodynamically stable or metastable due to low reaction rates. In the presence of excess CuO, the 124 is the stable phase. The melting of 124 pellets at P_O2=2800 bar shows that even at this pressure the 124 compound melts incongruently. Using the phase diagram data we could change the T_c of 123.5 from 16 to 70 K by varying systematically the nonstoichiometry. Due to a narrow homogeneity range the T_c of 124 remained constant but is different for powder pellets (81 K) and for crystals (70 K), probably due to the influence of the flux. Single crystals of both 124 and 123.5 with dimensions up to 4 mm were grown from the flux under high oxygen pressure.     

B-MQMAS and Si–{B} Double-Resonance NMR Studies on the Structure of Binary B2O3–SiO2 Glasses

Glasses in the system x B₂O₃·(1−x)SiO₂ (0.2≤x≤1.0) were studied using ¹¹B multiple quantum magic angle spinning NMR spectroscopy (MQMAS), ²⁹Si–\{¹¹B\} rotational echo adiabatic passage double-resonance and ²⁹Si–\}¹¹B\{ CP heteronuclear correlation spectroscopy. The results can be quantitatively interpreted in terms of a phase separation of the borosilicate glasses into a virtually SiO₂-free B₂O₃ phase and a mixed borosilicate phase. While the MQMAS spectra allowed the site speciation and resolution of at least two different ¹¹B resonances, attributable to BO_3/2 units consumed in boroxol rings, BO_3/2 units connecting the boroxol rings and BO_3/2 units involved in B–O–Si linkages, the analysis of the double-resonance data further elucidated the structure of the mixed borosilicate phase. The results indicate that only a fraction of 0.48 mol B₂O₃ can be accommodated per mole SiO₂, building a mixed borosilicate network.     

Anisotropic dielectric properties of PbYb1/2Ta1/2O3 single crystals

PbYb_1/2Ta_1/2O₃ single crystals were obtained for the first time. They were grown by the flux method. The PbOPbF₂B₂O₃ system was used as a solvent. Dielectric investigations were carried out in 1 0 0_c, 1 1 0_c and 1 1 1_c pseudocubic directions. These studies pointed to anisotropy of dielectric properties. Frequency-independent ε′(T) and ε″(T) maxima related to the antiferroelectric–paraelectric (AFE—PE) phase transition are observed for all directions at 562 K. The frequency-dependent ε′(T) and ε″(T) maxima near 400 K related to the ferroelectric (FE)–AFE phase transition are observed only in 1 1 1_c direction. The hysteresis loops were observed in this direction only. These results point that ferroelectric relaxor properties appear only in 1 1 1_c direction. We propose to consider the ferroelectric phase as ferrielectric one.     

Effective Ru moment in RuSr2Eu2−xCexCu2O10 from high-temperature magnetic susceptibility

We have made high-temperature (250 K<T<800 K) DC susceptibility measurements in the compounds RuSr₂Eu_2−xCe_xCu₂O₁₀ for x=0.6,0.8, and 1.0 in order to determine the Ru effective magnetic moment. After carefully subtracting all contributions to the magnetic susceptibility except that of the Ru ions, we have been able to fit the Ru susceptibility with a law χ_Ru=χ₀+C_Ru/(T−Θ_Ru). We have found that the Ru effective moment falls between the values expected for Ru⁵⁺ in spin states and . We have also found a dependence of μ_eff(Ru) and Θ_Ru with the Ce content x.     

Electrical transport and superconductivity in the Al2O3-Bi2Sr1.8Ca1.2Cu2Oy and MgO-Bi2Sr1.8Ca1.2Cu2Oy composites

We have measured the resistivities of Al₂O₃-Bi₂Sr_1.8Ca_1.2Cu₂O_y and MgO-Bi₂Sr_1.8Ca_1.2Cu₂O_y composites with the nominal Bi₂Sr_1.8Ca_1.2Cu₂O_y volume fraction, ₂₂₁₂, ranging from 0.15 to 1.00. For the Al₂O₃-Bi₂Sr_1.8Ca_1.2Cu ₂O_y composites, we find for the samples with ₂₂₁₂≥0.6 that the superconducting transition temperature, T_c, is not disturbed by the addition of Al₂O₃. For ₂₂₁₂<0.3, no zero-resistivity state is observed. For the MgO-Bi₂Sr_1.8Ca_1.2Cu₂O_y composites, T_c is barely disturbed for the samples with ρ₂₂₁₂≥0.7. No superconducting state is observed for the samples with ρ₂₂₁₂<0.35. The variation of (300 K) with ρ₂₂₁₂ indicates a three-dimensional percolating Bi-Sr-Ca-Cu-O matrix occurring at ρ₂₂₁₂≈0.19 and ≈0.15 in Al₂O₃-Bi₂Sr_1.8Ca_1.2 Cu₂O_y and MgO-Bi₂Sr_1.8Ca_1.2Cu₂O_y, respectively. Both resistivity and magnetization measurements suggest that the reactions of Bi₂Sr_1.8Ca_1.2Cu₂O_y with MgO are weaker than with Al₂O₃.     

Fixed charge and interface traps at heterovalent interfaces between Si(1 0 0) and non-crystalline Al2O3–Ta2O5 alloys

Characterization by Auger electron spectroscopy (AES) and Fourier transformation infrared spectroscopy (FTIR) confirms (Ta₂O₅)_x(Al₂O₃)_1−x alloys are homogeneous pseudo-binary alloys with increased thermal stability with respect to end member oxides, Ta₂O₅ and Al₂O₃. Capacitance–voltage (C–V) and current density–voltage (J–V) data as a function of temperate show that the Ta d-states of the alloys act as localized electron traps, and are at an energy approximately equal to the conduction band offset of Ta₂O₅ with respect to Si.     

Specific heat and anisotropic superconducting and normal-state magnetization of HoNi2B2C

The magnetization of single-crystal HoNi₂B₂C has been measured as a function of applied field (H) and temperature in order to probe the interplay between superconductivity and magnetism in this complex layered system. The normal-state magnetic susceptibility of HoNi₂B₂C is highly anisotropic with a Curie-Weiss-like temperature dependence for H applied perpendicular to the c-axis and with a much weaker temperature dependence for H applied parallel to the c-axis, indicating that the Ho⁺³ magnetic moments lie predominately in the tetragonal a−b plane below 20 K. High-field magnetization (2000 Oe), low-field magnetization (20 Oe) and zero-field specific heat all give an antiferromagnetic ordering temperature of T_N=5.0 K. Remarkably, in 20 Oe applied field both superconductivity (T_c=8.0 K) and antiferromagnetism (T_N=5.0 K) clearly make themselves manifest in the magnetization data. From these magnetization data a phase diagram in the H−T plane was constructed for both directions of applied field. This phase diagram shows a non-monotonic temperature dependence of H_c2 with a deep minimum at T_N=5 K. The high-field magnetization data for H applied perpendicular to the c-axis also reveal a cascade of three phase transitions for T < 5 K and H < 15 000 Oe, contributing to the rich H versus T phase diagram for HoNi₂B₂C at low temperatures.     

The effects of substrate temperature on the superconducting properties of Tl2Ca2Ba2Cu3O10 films sputter-deposited from stoichiometric oxide targets

The annealing characteristics and the superconducting properties of Tl₂Ca₂Ba₂Cu₃O₁₀ thin films sputter-deposited onto yttrium- stabilized ZrO₂ substrate at up to 500°C from two stoichiometric oxide targets are reported. The films deposited at 400–500°C were found to require a lower post-annealing temperature than the films deposited at lower temperatures to attain the highest T_c superconducting state, due to a more pronounced Ba diffusion toward the substrate as indicated by their secondary ion mass spectrometry depth profiles. The highest T_c achieved tends to degrade with increasing substrate temperatures, a zero resistance T_c of 121 and ≈90 K, respectively, being observed for the films deposited at -ambient temperature and at 500°C. The formation of the highest T_c phase (Tl₂Ca₂Ba₂Cu₃O₁₀) generally is associated with a sheet type of crystal growth morphology with smooth and aligned surfaces which can be obtained only from the films capable of sustaining prolonged annealing at 900°C. Annealing at lower temperatures (≈860°C) results in the formation of rod or sphere type of morphologies with rough and randomly oriented crystals and the lower T_c phases such as Tl₂Ca₁Ba₂Cu₂O₈.     

Systematic thermopower measurements of the thallium cuprates Tl(Ba,Sr)2Cam−1CumO2m+3−δ and Tl2Ba2Cam−1CumO2m+4+δ

The thermoelectric power (TEP) S versus temperature has been systematically investigated for several series of the superconducting cuprates Tl(Ba,Sr)₂Ca_m−1Cu_mO_2m+3−δ (m = 2, 3) and Tl₂Ba₂Ca_m−1Cu_mO_2m+4+δ (m = 1, 2, 3). The consideration of the S(T_c) curves allows two important points to be found evidence for. The first one deals with the fact that all these superconducting thallium cuprates are systematically overdoped whatever T_c, and whatever the number of Cu or Tl layers; no underdoped superconducting cuprate could be obtained. The second point shows that there exist two classes of Tl cuprates: the weakly overdoped cuprates that exhibit a T_{c max} ≥ 100 K (all the triple copper layer cuprates and the 2212 cuprates) and those which can be heavily doped that exhibit a T_{c max} ≤ 90 K (the 2201 and the 1212 cuprates). The different behavior of thallium cuprates compared to YBa₂Cu₃O_7−δ and to bismuth cuprates is discussed.     

Peak effect and oxygen ordering in YBa2Cu3O7−δ single crystals

We have investigated the second magnetization peak in pure YBa₂Cu₃O_7−δ single crystals with various oxygen contents (6.91<7−δ<6.97) and degrees of oxygen vacancy ordering, as achieved by low (1 bar) and high (100 bar) oxygen pressure annealing. Although the position of the peak changes drastically with oxygen stoichiometry, no dependence on the distribution of oxygen vacancies has been found for temperatures below 70 K. For T>70 K, however, ordering effects become important as demonstrated by the disappearance of the peak for the high pressure annealed samples. These results suggest that while at low temperatures, pinning of the vortex system by clusters or a more homogeneous distribution of oxygen vacancies is similar, at elevated T, the former are much stronger pinning sites leading to larger hysteresis and the presence of the peak.     

Investigations on conductivity anomalies in Li2O·4MnO1+x·4B2O3 glasses

Glassy material Li₂O·4MnO_1+x·4B₂O₃ (0<x<0.5) has been prepared by quenching the melt in air, and its electrical conduction behavior has been studied. Two conductivity anomalies are observed around the glass transition temperature. One appears in the dependence of the isothermal conductivity vs. the annealing time. This anomaly is attributed to the oxidation of Mn²⁺ by oxygen ions penetrating into the glass matrix, leading to the increase of the charge carrier density. The other anomaly is observed in the dependence of the conductivity vs. the temperature for different times of annealing. The abnormal increase and decrease of the conductivity vs. annealing time might result from a complicated structural variation in the glass. Below 200°C, the conductivity obeys an Arrhenius relation. Above 350°C, the formation of crystalline MnBO₃ causes a conductivity decrease by one order of magnitude. The conductivity is enhanced by the redistribution of free volume between these two temperatures.     

Temperature dependence of the critical current in YBa2Cu3O7−δ and Bi2Sr2Ca1Cu2O8 Josephson junctions

We have studied the stationary Josephson effect on YBa₂Cu₃O_7−δ (T_c=90 K) and Bi₂Sr₂Ca₁Cu₂ O₈ (T_c=80 K and 87 K for two samples of different origin) ceramic based junctions. The temperature dependence of the critical current near T_c has been found as I_c≈(T_c-T) for the Y-Ba-Cu-O samples indicating that they should be classified as S-N-I-N-S type junctions. The I-V curves of the Bi-Sr-Ca-Cu samples show the typical behaviour of S-I-S structures. Using Ambegaokar-Baratoff's theory for Bi₂Sr₂Ca₁Cu₂O₈, the temperature dependence of the superconducting state gap Δ(T) was calculated and it was evaluated that 1.452Δ(0)/k_BT_c3.5.     

Substrate dependent growth studies of MgB2 films by electrocrystallization

The comparative study of MgB₂ film growth on Al₂O₃ and glass substrate by electrocrystallization technique is discussed. The precursor magnesium films were deposited by vacuum evaporation method. These magnesium films were then used as electrode for the growth of MgB₂ films by electrocrystallization. The structural, morphological and superconducting properties of the electrocrystallized MgB₂ films on Al₂O₃ substrate were examined by using XRD, SEM and electrical resistivity measurement techniques and compared with that of MgB₂ films grown on glass substrate. The films deposited on Al₂O₃ substrates showed enhanced crystallinity and relatively higher T_c value compared to films deposited on glass substrates.     

空位缺陷和相变对冲击压缩下蓝宝石光学性质的影响

为了探究冲击压缩下蓝宝石光学性质的变化行为,本文采用第一性原理方法,在180 GPa的压力范围内计算了蓝宝石理想晶体和含空位点缺陷晶体的光学性质.吸收光谱数据表明,仅考虑压力和温度因素不能解释冲击消光实验的结果,而冲击诱导的氧离子空位点缺陷应该是导致该结果的一个重要原因.波长在532 nm处的折射率数据表明:1)蓝宝石的两个高压结构相变将导致其折射率明显上升;在Corundum和Rh_2O_3相区,其折射率将随冲击压力增大而降低;在CalrO_3相区,压力小于172 GPa时,其折射率随冲击压力增大而缓慢地降低,但172 GPa以上时折射率却随冲击压力增大而逐渐增大;2)空位点缺陷对折射率随冲击压力的变化规律有明显的影响.本文结果不仅有助于增强用空位点缺陷的物理机理来解释蓝宝石冲击透明性损伤现象的可靠性,而且对未来进一步的实验研究以及发展新型窗口材料有重要的参考作用.     

Cl nuclear quadrupole resonance studies of molecular motions of ClO3 and water diffusion in Ca(ClO3)2·2H2O

A ³⁵Cl nuclear quadrupole resonance (³⁵Cl-NQR) investigation of polycrystalline Ca(ClO₃)₂·2H₂O is described. The ³⁵Cl-NQR frequencies (ν_Q) for two resonance lines (ν_Q1 and ν_Q2), the spin lattice relaxation time (T_1Q) for ν_Q2 only and the line width δν_Q2 were measured in the temperature range 292–345 K, except for the frequency measured up to 455 K. The observed decrease in the resonance frequencies with increasing temperature permitted the determination of the frequencies of librations of the ClO₃⁻ ion about two axes perpendicular to the three-fold axis of the ion mainly responsible for this effect. The temperature dependence of the relaxation time T_1Q proved the occurrence of water diffusion and hindered rotation of ClO₃⁻ ions. The activation energies of these two molecular motions were determined, and their effect on the electric field gradient at the site of a chlorine nucleus was discussed. Temperature measurements of the line width δν_Q2 confirmed the conclusions drawn from the analysis of T_1Q(T).     

Influence of the transparency of tunnel barriers in Nb/Al2O3/Al/Al2O3/Nb junctions on transport properties

The transparency of the tunnel barriers in double-barrier junctions influences the critical current density and the form of the current–voltage characteristics (IVC). Moreover, the barrier asymmetry is an important parameter, which has to be controlled in the technological process. We have performed a systematic study of the influence of the barrier transparency on critical current, I_C, and normal resistance, R_N, by preparing SIS and SINIS junctions under identical technological conditions and comparing their transport properties. We have fabricated Nb/Al₂O₃/Nb and Nb/Al₂O₃/Al/Al₂O₃/Nb devices with different current densities using a conventional fabrication process, varying pressure and oxidation time. The thickness of the Al middle electrode in all Nb/Al₂O₃/Al/Al₂O₃/Nb junctions was 6 nm. Patterning of the multilayers was done using conventional photolithography and the selective niobium etching process. The current density of SIS junctions was changed in the range from 0.5 to 10 kA/cm². At the same conditions the current density of SINIS devices revealed 1–100 A/cm² with non-hysteretic IVC and characteristic voltages, I_CR_N, of up to 200 μV. By comparing the experimental and theoretical temperature dependence of the I_CR_N product we estimated the barrier transparency and its asymmetry. The comparison shows a good agreement of experimental data with the theoretical model of tunneling through double-barrier structures in the dirty limit and provides the effective barrier transparency parameter γ_eff≈300. A theoretical framework is developed to study the influence of the barrier asymmetry on the current–phase relationship and it is proposed to determine the asymmetry parameter by measuring the critical current suppression as function of applied microwave power. The theoretical approach to determine the non-stationary properties of double-barrier junctions in the adiabatic regime is formulated and the results of calculations of the I–V characteristics are given in relevant limits. The existence and the magnitude of a current deficit are predicted as function of the barrier asymmetry.     

Magnetic properties of xFe2O3(1−x)[B2O3 · PbO] glasses

The magnetic measurements performed on xFe₂O₃(1-x)[B₂O₃ · PbO] glasses show that for x 5 mol.% Fe₂O₃ the thermal variation of reciprocal susceptibility obeys a Curie behaviour. For higher iron content, at T 50 K, a nonlinear variation, typical for systems with random distribution of exchange interactions is observed. At greater temperatures than 50 K a Curie-Weiss behaviour is shown. The composition dependence of the Curie constants is analysed in correlation with the number of Fe³⁺ and Fe²⁺ ions as determined from Mössbauer effect measurements. A comparison with the data obtained in case of xFe₂O₃(1-x)[3B₂O₃ · PbO] glasses is made.     

SiO2 passivation film effects on microwave characteristics of YBa2Cu3O7−x-based resonators

SiO₂ film coated as a passivation layer for YBa₂Cu₃O_7−x (YBCO)-based microwave devices is investigated by measuring the microwave characteristics of microstrip line resonators. The SiO₂ film is deposited with its 0.3 to 0.4 μm thickness by a sputtering method using Ar + 30%O₂ plasma. These deposition conditions do not degrade the microwave characteristics and the critical temperature (T_c). Next, the SiO₂ film coated resonators are compared with the uncoated ones for two kinds of degradation conditions: a 200°C annealing in air, and an exposure to air at 85°C and 85% RH (relative humidity). We find that the SiO₂ passivation film prevents the YBCO thin film from the surface degradation and reacting with water.     

Growth and magnetism of Ni nanoparticles in Ni/Al2O3/Si or Si3N4 multilayers

We report on the fabrication of Ni/Al₂O₃/Si and textured Ni/Al₂O₃/Si₃N₄ multilayers containing Ni nanoparticles that exhibit significantly improved results. The secondary phases arising from thermal reaction between Ni and Si can be remarkably suppressed with increasing layers of Al₂O₃ and deposition of Ni/Al₂O₃ multilayers on Si₃N₄ substrates. Atomic force microscopy shows the formation of large as well as nanoclusters of Ni when grown on Si, whereas textured Ni nanoparticles are formed on Si₃N₄ substrates. The magnetization measurements on Ni/Al₂O₃/Si containing a single buffer layer of Al₂O₃ shows higher coercivity field with magnetic nanowire-like behavior, whereas with several Al₂O₃ alternate layers almost a superparamagnetic-like behavior is observed. However, significantly improved magnetic hysteresis was observed in textured Ni/Al₂O₃/Si₃N₄ multilayers due to preferred alignment of Ni nanocrystallites.     

A new procedure for the preparation of Tl2Ba2CaCu2O8-δ characterization by neutron diffraction, electron diffraction and HREM

A new procedure for the preparation of Tl₂Ba₂CaCu₂O_8-δ is presented. In the first step stoichiometric amounts of Cu(NO₃)₂·3H₂O, Ba(OH)₂·H₂O, CaO and Tl₂O₃ are reacted in a closed alumina crucible at 760°C to form a mixture of Tl- 2212, CuO, CaO and other oxide phases. In the second step this material is milled, pelletized and fired in a gold-sealed alumina crucible at 860–900°C for three to eight hours. Three batches of Tl-2212 prepared by this method were investigated showing less than 1% loss of thallium while T_c was close to 110 K. Rietveld refinements using time-of-flight neutron-diffraction data demonstrate that the method produces pure material in a reproducible way and that the materials are substoichiometric with respect to oxygen (δ=0.3). Investigations using electron diffraction and high-resolution electron microscopy indicate the absence of stacking faults.