LD泵浦Nd∶LuVO4/Cr4+∶YAG被动调Q激光器

采用大功率半导体激光器端面泵浦Nd∶LuVO4晶体，利用Cr4+∶YAG晶体作为可饱和吸收元件，实现了1.06 μm激光的被动调Q运转.在泵浦功率为19.1 W时，获得最高平均输出功率为4.58 W，脉冲宽度为84 ns，单脉冲能量为36.6 μJ以及峰值功率为436.2 W的激光脉冲.     

二极管泵浦的被动调Q与脉冲幅度混沌Nd:LaMgAl11O19全固态激光器

基于二极管泵浦Nd:LaMgAl₁₁O₁₉无序晶体激光器实现了被动调Q激光以及脉冲幅度混沌激光的输出。当泵浦功率在4.8~8.6 W范围内时,激光器运转在被动调Q状态;当泵浦功率为8.6 W时,调Q激光的平均输出功率为613 mW、重复频率为157.1 kHz、脉冲宽度为2.2μs。当泵浦功率增加到8.7~10.5 W范围内时,输出激光的脉冲幅度呈不规则随机分布现象;通过分析脉冲峰值序列的自相关曲线、相位图、功率谱、随机直方图,判定激光器运转在脉冲幅度混沌状态;当泵浦功率功率为10.5 W时,脉冲幅度混沌激光的平均输出功率为814 mW。     

二极管泵浦的被动调Q与脉冲幅度混沌Nd:LaMgAl_(11)O_(19)全固态激光器（英文）

基于二极管泵浦Nd:LaMgAl_(11)O_(19)无序晶体激光器实现了被动调Q激光以及脉冲幅度混沌激光的输出。当泵浦功率在4.8～8.6 W范围内时,激光器运转在被动调Q状态;当泵浦功率为8.6 W时,调Q激光的平均输出功率为613 mW、重复频率为157.1 kHz、脉冲宽度为2.2μs。当泵浦功率增加到8.7～10.5 W范围内时,输出激光的脉冲幅度呈不规则随机分布现象;通过分析脉冲峰值序列的自相关曲线、相位图、功率谱、随机直方图,判定激光器运转在脉冲幅度混沌状态;当泵浦功率功率为10.5 W时,脉冲幅度混沌激光的平均输出功率为814 mW。     

LD泵浦Cr∶YAG被动调Q 556nm黄光激光器

通过对谐振腔镜镀制合理的激光薄膜，成功实现了LD泵浦Nd∶YAG 1.111 μm激光谱线的运转.利用LBO腔内倍频Nd∶YAG/Cr∶YAG结构获得了高重复频率被动调Q556 nm全固态黄光激光器，在注入泵浦功率为1.6 W时，得到平均功率51 mW，脉冲宽度48 ns,重复频率8.9 kHz,峰值功率高达119 W的脉冲黄光输出.     

LD泵浦Nd:GdVO4晶体1.34 μm被动调Q的研究

由于Co:LMA晶体具有良好的热机械性能、高化学稳定性和较大的基态吸收截面积,因此以Co:LMA作为饱和吸收体可实现对1.3～1.6 μm波段的激光进行被动调Q. 以Co:LMA饱和吸收体作为Q开关,研究了高功率激光二极管泵浦的c切Nd:GdVO4固体激光器1.34 μm的被动调Q. 在泵浦功率为11.5 W和优化的输出镜透过率为T=5.5%时,获得了3.01 W的静态输出功率. 利用初始透过率为T0=90%的Co:LMA晶体作为调Q器件的动态运转,可以得到的最短输出脉冲宽度、最高输出功率、最高脉冲重复率和最高峰值功率分别是32 ns,266 mW,277 kHz和187 W.     

二极管泵浦被动调QNd∶YAG/KTP绿光激光器（英文）

报道了LD泵浦的Nd∶YAG/KTP/Cr∶YAG结构被动调Q绿光激光器.当注入泵浦功率为750mW时,获得了平均功率38mW,脉冲宽度14.7ns,重复频率20.4kHz,峰值功率126.6W的调Q绿激光输出.     

LD泵浦Nd∶LuVO_4/Cr~(4 )∶YAG被动调Q激光器

采用大功率半导体激光器端面泵浦Nd∶LuVO4晶体,利用Cr4 ∶YAG晶体作为可饱和吸收元件,实现了1.06μm激光的被动调Q运转.在泵浦功率为19.1W时,获得最高平均输出功率为4.58W,脉冲宽度为84ns,单脉冲能量为36.6μJ以及峰值功率为436.2W的激光脉冲.     

LD抽运被动调Q固体激光器的脉冲稳定性

报道了二极管激光抽运Cr,Nd∶YAG被动调Q Nd∶YVO4 1064 nm激光输出.为了提高被动调Q激光的输出稳定性,谐振腔采用长腔,增益介质位于谐振腔中间位置.实验中获得了稳定的被动调Q激光输出.在最高入射抽运功率为17.5 W时,脉冲重复频率达到71.3 kHz,脉冲宽度为0.4 μs.调Q脉冲幅度不稳定性低于±10%,脉冲时间波动性低于±3.5%.     

LD泵浦Nd∶YVO4/V∶YAG被动调Q 1.34 μm激光器

利用新型实用的晶体材料V∶YAG作为被动调Q元件,实现了激光二极管泵浦Nd∶YVO4的1.34 μm激光谱线调Q运转.研究了饱和吸收体小信号透过率对激光稳定性的影响,得出使用小信号透过率T0小的V∶YAG可使激光脉冲能量和重复频率稳定的结论.在1.6 W的泵浦条件下,T0为96%、89%和85%时,4 h脉冲能量和重复频率稳定性分别为15%、10%和5%.使用T0为85%的V∶YAG,获得了平均功率输出功率96 mW,脉宽8.8 ns,重复频率25 kHz,峰值功率436 W,脉冲能量3.84 μJ的实验结果.     

AlGaInAs半导体饱和吸收体调Q特性的理论与实验研究

利用通过金属化学气相沉积法长成的AlGaInAs饱和吸收体,对808nmLD泵浦的Nd∶YVO4键合晶体进行被动调Q,获得了波长为1.06μm的激光脉冲,测量了脉冲能量、脉冲宽度、脉冲重复率随泵浦功率的变化.当泵浦功率为10.57W时,激光平均输出功率为3.45W,斜效率为39%,重复频率达到最大值101kHz.当泵浦功率为8.07W时,脉冲宽度达到最小值1.76ns.利用速率方程对该激光器进行理论分析,计算出输出脉冲能量、峰值功率、脉冲宽度和重复频率的理论值,实验结果和理论结果基本一致.     

Compact and efficient diode-pumped passively Q-switched Nd:GdVO_4 laser at 1.06μm

Diode-pumped passively Q-switched Nd:GdVO4/Cr4+:YAG lasers with a simple flat-flat cavity were demonstrated. The maximum average output power at 1.06 μm was 1.25 W. The highest peak power and pulse energy were 7.56 kW and 75μJ, respectively, with the pulse repetition rate of 11.1 kHz and pulse width of 10 ns at the incident pump power of 8 W.     

低温生长GaAs在Nd∶YVO4激光器中调Q特性的研究

采用一种新型的被动调Q饱和吸收体,低温生长GaAs薄膜，实现了半导体抽运Nd∶YVO4激光器的调Q运转.研究了激光器的调Q特性,调Q抽运阈值为2W.在抽运功率9.2 W时，获得的最短脉冲半峰全宽为15 ns，最大单脉冲能量为4.84 μJ，最高峰值功率为330 W，最大平均输出功率为1.16 W；脉冲重复频率在220 kHz到360 kHz之间.     

Passively Q-switched Nd:YAG ceramic laser towards large pulse energy and short pulse width

A large pulse energy and high peak power passively Q-switched ceramic neodymium-doped yttrium aluminum garnet (Nd:YAG) laser has been demonstrated with Cr⁴⁺:YAG crystals as the saturable absorbers. By employing a continuous wave (CW) laser-diode (LD) as the pump source, as high as 11.3 W CW output power of 1064 nm was obtained under the pump power of 21.6 W, with an optical conversion efficiency of 52.3%. Inserting different initial transmissions Cr⁴⁺:YAG as saturable absorbers, under the incident pump power of 15.6 W, the largest pulse energy, shortest pulse width, and highest peak power are measured to be 188 μJ, 3.16 ns, and 59.5 kW, respectively. As we has known, this is the best passively Q-switched results ever reported by Nd:YAG ceramic material.     

Laser diode and pumped Cr:Yag passively Q-switched yellow-green laser at 543 nm

Efficient and compact yellow green pulsed laser output at 543 nm is generated by frequency doubling of a passively Q-switched end diode-pumped Nd:YVO₄ laser at 1086 nm under the condition of sup-pressing the higher gain transition near 1064 nm. With 15 W of diode pump power and the frequency doubling crystal LBO, as high as 1.58 W output power at 543 nm is achieved. The optical to optical conversion efficiency from the corresponding Q-switched fundamental output to the yellow green output is 49%. The peak power of the Q-switched yellow green pulse laser is up to 30 kW with 5 ns pulse duration. The output power stability over 8 hours is better than 2.56% at the maximum output power. To the best of our knowledge, this is the highest watt-level laser at 543 nm generated by frequency doubling of a passively Q-switched end diode pumped Nd:YVO₄ laser at 1086 nm.     

2 μm波段半导体可饱和吸收镜被动调Q光纤激光器

基于半导体可饱和吸收镜和光纤光栅实现了稳定的2 m波段被动调Q光纤脉冲激光器,输出激光的中心波长为1958.2 nm。随着泵浦功率的增加,输出脉冲的重复频率不断增加,而对应脉冲的宽度不断减小。输出脉冲重复频率的变化范围为20～80 kHz,脉冲宽度的变化范围为490 ns～1 s。当泵浦功率为1.3 W时,调Q光纤激光器的最大平均输出功率为91 mW,脉冲重复频率为80 kHz,脉冲宽度为490 ns,对应的最大单脉冲能量约为1.14 J。     

基于多层石墨烯可饱和吸收体的被动调Q Ho∶YAG激光器

报道了2μm被动调Q的Ho∶YAG激光器,该激光器采用Tm~(3+)光纤激光器作为泵浦源,使用多层石墨烯作为可饱和吸收体。在连续波激光输出模式下,当泵浦功率为4.2 W时,获得了750 mW激光输出,输出激光中心波长为2.09μm,斜率效率为29.6%。在连续波激光器谐振腔中插入多层石墨烯可饱和吸收体并调整谐振腔,获得了脉冲激光输出。当泵浦功率为4.2 W时,获得最小脉冲宽度3.1μs、重复频率66.6 kHz的脉冲激光输出,其最大平均输出功率为170 mW,斜率效率为12.6%,光束质量因子M_x~2=1.15,M_y~2=1.12。     

石墨烯可调谐被动调Q掺铒光纤激光器

基于光学沉积方法,制备了石墨烯可饱和吸收体,并利用此可饱和吸收体搭建了环形腔结构的被动调Q掺铒光纤激光器,实现了稳定的调Q激光脉冲输出,其重复频率为5.1~14.2 kHz,最窄激光脉冲宽度为8 s,最大平均功率为162.3 W,且通过调节偏振控制器,中心波长在1556~1558 nm可调。     

Multi-watt Q-switched Nd:YVO_4 laser with GaAs output coupler

A passively Q-switched operation of a diode-pumped Nd.YVO_4 laser is demonstrated, in which a GaAsfilm is used as the saturable absorber as well as the output coupler. At the pump power of 10 W, a stablefundamental-mode average power output of 2.11 W was obtained with a pulse duration of 140 ns, pulseenergy of 76 μJ and pulse repetition rate of 28 kHz. A theoretical analysis that describes the passiveQ-switching dynamics of GaAs is presented.     

LD-pumped passively Q-switched Nd:GGG laser at 1062 nm with a GaAs saturable absorber

we have experimentally studied the passively Q-switched performance of a diode-pumped Nd:GGG laser at 1062 nm with a GaAs saturable absorber, in the experiment when the pumped power was 9.8 W, the maximum CW output power of 5.1 W was obtained. The optical conversion efficiency and the slop efficiency were 52 and 53%, respectively. The threshold was 0.9 W. In the passively Q-switched regime, we get the average output power of 0.93 W. The shortest pulse width and pulse repetition rate were 7 ns and 188 kHz, respectively.