Quantum energy and charging energy in point contact MOSFETs acting as single electron transistors

The charging energy and quantum energy in silicon single electron transistors have been investigated. The devices were fabricated in the form of point contact MOSFETs, some of which show the Coulomb blockade oscillations at room temperature. The charging energy and quantum energy were derived by fitting the simulation results to the experimental data. It was clearly found that the quantum energy became comparable with the charging energy when the dot size is smaller than 10–20 nm and the charging energy is more than 20 meV. These results indicate that the quantum effects should be taken into account even in silicon devices when silicon single electron transistors or MOSFETs smaller than about 20 nm are designed.     

Narrow luminescence linewidth of a silicon quantum dot

Single-dot luminescence spectroscopy was used to study the emission linewidth of individual silicon nanocrystals from low temperatures up to room temperature. The results show a continuous line narrowing towards lower temperatures with a linewidth as sharp as 2 meV at 35 K. This value, clearly below the thermal broadening at this temperature, proves the atomiclike emission from silicon quantum dots subject to quantum confinement. The low temperature measurements further reveal a approximately 6 meV replica, whose origin is discussed. In addition, an approximately 60 meV TO-phonon replica was detected, which is only present in a fraction of the dots.     

Multi-exciton spectroscopy on a self-assembled InGaAs/GaAs quantum dot

We report about spatially resolved magneto-optical experiments on a self-assembled InGaAs quantum dot. Using electron beam lithograpy for patterning a metal shadow mask we can isolate a single dot. This allows us to study the optical response of a single dot as a function of excitation power and magnetic field. We investigate the influence of many body interaction in the emission spectra for different exciton occupation numbers of the dot. The diamagnetic/orbital shift as well as Zeeman splitting in a magnetic field can be fully resolved and are used to identify the observed emission lines. Further we report on absorption properties of the quantum dot as a function of magnetic field. We analyse in detail the phonon-assisted absorption process connected with the GaAs LO-phonon 36 meV above the single-exciton ground state.     

Strong coupling in a microcavity LED

Thin films of polyelectrolyte/J aggregate dye bilayers with high absorption coefficient (6 nm thick with alpha approximately equal to 1.0 x 10(6) cm(-1)) inserted in an optical microcavity enable the cavity quantum electrodynamic strong coupling limit to be reached at room temperature with a coupling strength (Rabi splitting) of 265 +/- 15 meV. By embedding these films in a resonant cavity organic LED structure, we demonstrate the first emissive electrically pumped exciton-polariton device.     

Self-assembling of Ge quantum dots in the CaF<Subscript>2</Subscript>/Ge/CaF<Subscript>2</Subscript>/Si heteroepitaxial system and the development of tunnel-resonance diode on its basis

A CaF₂/Ge/CaF₂/Si(111) heteroepitaxial structure with Ge quantum dots was grown by molecular-beam epitaxy. A negative differential conductivity and conductivity oscillations caused by resonant hole tunneling were observed at room temperature. The energy spacing between the levels in quantum dots, as determined from the oscillation period, is 40–50 meV depending on the Ge dot size.     

变分方法研究ZnO量子点中激子的基态特性

ZnO是一种新型宽禁带直接带隙Ⅱ-Ⅵ族半导体材料,室温激子束缚能高达60meV,远大于室温热离化能(26meV),因此ZnO是适于室温或更高温度下使用的高效紫外光电材料。ZnO半导体量子点材料与体材料相比具有崭新的光电特性,特别在紫外激光器件方面,与ZnO的激子特性密切相关,因此理论上对ZnO量子点中激子的基态特性进行研究就显得十分必要。采用有效质量近似(EMA)方法,提出新的比较简单的尝试波函数,对ZnO量子点中激子的基态特性进行了计算。计算结果与实验结果基本吻合,说明我们的计算结果比较真实、有效。对变分参数K_e、K_h,归一化常数N_e、N_h以及波函数ψ随粒径变化关系进行了计算。计算结果表明,当量子点半径较小(r≤4.0a_B)时,激子的波函数ψ变化非常迅速,而由于此时量子点具有很大的比表面积,因此量子点所处的环境、体内的缺陷、杂质会对其产生非常强烈的影响,同时其表面(界面)的介质会对其基态特性产生影响,因此对量子点进行有效的修饰与掺杂以减少其表面缺陷及表面悬键,减少无辐射复合与界面发射是非常必要的。     

Study of isolated cubic GaN quantum dots by low-temperature cathodoluminescence

We report single dot spectroscopy of cubic GaN/AlN self-assembled quantum dots. Typical linewidths of the zero-phonon line between 2 and 8 meV are observed and interpreted in terms of charge fluctuations around a given quantum dot. The phonon sideband contribution in this emission, even at low temperature, reveals the importance of the acoustic phonon broadening mechanism which controls the exciton dephasing and may impose the real limits to the optical properties of GaN single QDs emission.     

Evidence for temperature-dependent electron band dispersion in pentacene

Evidence for temperature-dependent electron band dispersion in a pentacene thin film polymorph on graphite is provided by angle- and energy-dependent ultraviolet photoelectron spectroscopy. The bands derived from the highest occupied molecular orbital exhibit dispersion of approximately 190 meV at room temperature, and approximately 240 meV at 120 K. Intermolecular electronic coupling in pentacene thin films is thus confirmed to be dependent on temperature and possibly crystal structure, as suggested by additional infrared absorption measurements.     

Fabrication of quantum dot transistors incorporating a single self-assembled quantum dot

We report on the fabrication and the characterization of quantum dot transistors incorporating a single self-assembled quantum dot. The current–voltage characteristics exhibit clear staircase structures at room temperature. They are attributed to electron tunneling through the quantized energy levels of a single quantum dot.     

Quantum cascade electroluminescence in GaAs/AlGaAs structures

The operation of a unipolar quantum cascade light-emitting diode based on the material system GaAs/AlGaAs is reported. The LED operates at a wavelength of 6.9 μm. Detailed analysis of the electroluminescence spectra shows a linewidth as narrow as 14 meV at cryogenic temperatures, increasing to 20 meV at room temperature. For typical drive-current densities of 1 kA/cm² the optical output power lies in the ten 10 nW range. Additional absorption and photocurrent measurements provide a complete characterization of the mid-infrared emitter.     

Selective optical doping to predict the performance and reveal the origin of photocurrent peaks in quantum dots-in-a-well infrared photodetectors

Resonant optical pumping across the band gap was used as artificial doping in InAs/In_0.15Ga_0.85As/GaAs quantum dots-in-a-well infrared photodetectors. Through efficient filling of the quantum dot energy levels by simultaneous optical pumping into the ground states and the excited states of the quantum dots, the response was increased by a factor of 10. Low temperature photocurrent peaks observed at 120 and 148 meV were identified as intersubband transitions emanating from the quantum dot ground state and the quantum dot excited state, respectively by a selective increase of the electron population in the different quantum dot energy levels.     

Coherent longitudinal-optical ground-state phonon in CdSe quantum dots triggered by ultrafast charge migration

We observe the CdSe longitudinal-optical ground-state phonon in the electron transfer system composed of CdSe quantum dots and methylviologen directly by femtosecond absorption spectroscopy. A significant phase shift indicates that the coherent oscillations are triggered by an ultrafast charge migration, which is the consequence of an electron transfer from the photoexcited quantum dot to the molecular acceptor methylviologen. In contrast, the observed coherent phonons in isolated quantum dots stem from the frequency modulation of the quantum dot excited-state spectrum. From the probe wavelength dependence of the longitudinal-optical phonons in the electronic ground state and excited state it is possible to determine a biexciton binding energy of 35?meV.     

Electron radiation effects on InAs/GaAs quantum dot lasers

The InAs/GaAs quantum dot laser diodes and corresponding quantum dot samples are irradiated by 1 MeV electron. The laser performance and quantum dot photoluminescence intensity at room temperature are enhanced over a fluence range of 4 × 10¹³ cm^?2. The radiation-induced defects increase the efficiency of carrier transfer to the quantum dots, which results in the improvement of photoluminescence performance under low level displacement damage. The contact resistant of quantum dot lasers decreases because the ohmic contact is also improved by electron irradiation.     

CdSe量子点滤光片尺寸、温度依赖的光学特性

为了缩小光谱仪体积使之适用于军事卫星等领域,本文将胶体量子点作为滤光材料,研究了CdSe胶体量子点滤光片的光学特性。本文采用热注入法合成出了高质量的CdSe胶体量子点,经过对苯二胺消光处理制备成CdSe胶体量子点滤光片。利用透射电子显微镜(TEM)进行样品形貌结构的表征及粒径尺寸的测量,并分别在不同温度下进行了紫外-可见吸收测量和紫外-可见透过率测量。实验表明,在室温情况下,CdSe胶体量子点薄膜的吸收和透过率均随粒径尺寸的增加而增加;在给定粒径尺寸的情况下,CdSe胶体量子点薄膜吸收与透过率曲线的第一激子吸收峰峰位随温度升高发生红移,CdSe胶体量子点薄膜吸收曲线温度每增加10 K红移不超过1 nm,且半峰宽增加;此外,经反复实验验证CdSe胶体量子点滤光片的稳定性及可调谐特性,证实其适合作为截止滤光片。上述结果表明,CdSe胶体量子点滤光片在微型光谱仪方面具有良好的应用价值。     

intersubband pumping of an : InP symmetric double quantum well terahertz laser

The feasibility of intersubband optical excitation of a terahertz (1–10 THz) or far-infrared (30–300 ) emitter/laser by a laser diode is investigated by means of envelope function/effective mass approximation and subband carrier lifetime calculations. The material system is employed in order to supply the necessary conduction band offset and the basic design is that of a 6-level symmetric double quantum well. This can simultaneously satisfy the criteria of an 800 meV intersubband absorption and a far-infrared emission. It is shown that these device designs can satisfy a necessary criterion for population inversion at room temperature. A scheme for improving the population ratio based on a 9-level triple quantum well is discussed.     

Light emission from silicon nanocrystals: Probing a single quantum dot

Analysis of low-temperature photoluminescence measurements performed on single silicon nanocrystals is presented. The luminescence emission linewidth of Si nanocrystals is found to be less than thermal broadening at low temperature, confirming the atomic-like nature of their energetic states. Beside the main peak the low-temperature spectra reveal a ∼6 meV replica, the origin of which is discussed. For some of the investigated dots, we also observe a ∼60 meV transverse optical (TO) phonon replica. The regular arrangement of individual nanocrystals used in this work enables combined high-resolution transmission electron microscopy (TEM) and low-temperature photoluminescence characterization of the same single quantum dot.     

Photoluminescence study of ZnCdSe/ZnSe quantum dot systems

The optical properties of the populated ZnCdSe/ZnSe quantum dots have been studied by photoluminescence spectra measured with different laser excitation apertures at temperatures from 22 to 300 K. The differences of spectral features between small and large excitation spot suggest the existence of quantum dot size fluctuation in the system. The temperature evolution of photoluminescence spectral features revealed that two types of quantum dots with different densities and sizes coexist in ZnCdSe/ZnSe system. The energy spacings of the two kinds of quantum dot emissions are about 50 meV at various temperatures. The thermally activated lateral transfer processes of carriers populated in the two sorts of quantum dots are investigated by temperature dependences of spectral intensities.     

Photoluminescence of single quantum wires and quantum dots

The results of a study into the photoluminescence spectra of a set of quantum dots based on GaAs enclosed in AlGaAs nanowires are presented. The steady state and time resolved spectra of photoluminescence under optical excitation both from an array of quantum wires/dots and a single quantum wire/dot have been measured. In the photoluminescence spectra of single quantum dots, emission lines of excitons, biexcitons and tritons have been found. The binding energy of the biexciton in the studied structures was deduced to be 8 meV.     

Photostability of single-photon emission from a single quantum dot in the 650-nm wavelength band at room temperature

The photoluminescence correlation from a single CdSe nanocrystal under pulsed excitation is studied, and a single photon is realized at wavelength 655 nm at room temperature. The single colloidal CdSe quantum dot is prepared on a SiO₂/silicon surface by a drop-and-drag technique. The long-term stability of the single-photon source is investigated; it is found that the antibunching effect weakens with excitation time, and the reason for the weakening is attributed to photobleaching. The lifetimes of photoluminescence from a single quantum dot are analyzed at different excitation times. By analyzing the probability distribution of on and off times of photoluminescence, the Auger assisted tunneling and Auger assisted photobleaching models are applied to explain the antibunching phenomenon.