溶胶-凝胶法制备ZnO纳米薄膜的工艺和应用

ZnO是一种重要的功能材料和新型的Ⅱ-Ⅵ族宽禁带半导体材料.采用溶胶-凝胶(Sol-gel)工艺在Si(100)、Si(111)和c面蓝宝石衬底上成功制备出高质量的ZnO纳米薄膜,并用XRD、SEM、AFM等方法研究了薄膜的特性.首次以制备的ZnO纳米薄膜为缓冲层,在n型Si(100)衬底上采用低压化学气相沉积(LPCVD)工艺外延生长了SiC薄膜,得到了低载流子浓度、高电子迁移率和高空穴迁移率的两种SiC薄膜样品,分析了该薄膜的性能.     

Sr/Si界面沉积SrTiO3初始生长阶段的扫描遂道显微术研究

本文工作利用脉冲激光沉积术(PLD)和超高真空扫描隧道显微术(UHV-STM),研究了在Sr/Si(001)-(2×1)衬底表面上真空室温沉积几个单层SrTiO₃薄膜的初始生长过程.经660 ℃退火处理后,Sr/Si衬底表面上形成了纳米岛状结构.经分析,这些纳米小岛为C49-TiSi₂和 C54-TiSi₂.实验结果表明,在没有氧气的情况下退火,Sr/Si界面无法有效阻止SrTiO₃薄膜与Si衬底之间的相互作用. 关键词： 脉冲激光沉积术(PLD) 扫描隧道显微镜(STM) 3')" href="#">SrTiO₃ 2')" href="#">C54-TiSi₂     

Si(111)-(7×7)衬底上合成有序的IV族金属铅团簇阵列

文章作者在Si(111)(7×7)衬底上合成出位于同一主族的Pb的全同纳米团簇有序阵列.有趣的是,当衬底温度相对于最佳的生长温度范围发生微小的偏离时,Pb纳米团簇很容易转变为其他结构的团簇.结合实验结果和第一性原理总能量计算,文章作者揭示了几种Pb团簇的原子结构.这些结构都是以表面Pb和Si原子互换导致的混合模型为中心的衍生结构.Pb/Si(111)体系的这种边缘性质为研究表面幻数团簇的合成、分解等动力学过程提供了重要信息.     

湿法刻蚀对Si基片孔点阵及ZnO外延薄膜周期形貌的影响

利用射频等离子体辅助分子束外延法，在刻有周期性孔点阵结构的Si衬底上生长了ZnO二维周期结构薄膜，系统研究了湿法化学刻蚀对孔形点阵Si(100),Si(111)基片表面形貌的影响，以及两种初底上ZnO外延薄膜的结晶质量与周期形貌的差异.X射线衍射及扫描电子显微测试结果表明：Si (111)衬底上生长出的ZnO二维周期结构薄膜具有较好的结晶质量与较好的周期性表面形貌.该研究结果为二维周期结构的制备提供了一种新颖的方法. 关键词： ZnO 分子束外延 Si 湿法刻蚀     

HFCVD法制备纳米晶态SiC及其室温下的光致发光

用热丝化学气相沉积(HFCVD)法以CH4和SiH4作为反应气体在Si衬底上制备了纳米晶态6H-SiC。为减小6H-SiC与Si衬底之间的晶格失配,在HFCVD系统中通过对Si衬底表面碳化处理制备了缓冲层,确立了形成缓冲层的最佳条件。采用扫描电镜、傅里叶红外吸收谱和X射线衍射等分析手段对样品进行了结构和组分分析。结果表明,在较低的衬底温度下所沉积的是晶态纳米SiC,纳米晶粒平均尺寸约为60nm,并在室温下观察到所制备的纳米SiC位于380～420nm范围内的短波可见光。研究和分析了碳化时间对发光峰及红外吸收峰位置的影响。     

高度均一ZnO纳米梭的水热法制备及其性能

以六亚甲基四胺和硝酸锌为原料,采用水热法在90℃条件下反应24h,于Si衬底上制备出一维ZnO纳米梭材料.采用场发射扫描电镜、X射线衍射仪和高分辨透射电镜等方法对样品形貌和晶体结构进行了表征.结果表明,所得ZnO纳米梭形貌一致、尺寸均匀,为六方纤锌矿型结构,具有良好的结晶性能.对ZnO纳米梭的光致发光性能的研究表明,该...     

纳米Si-SiO_x和Si-SiN_x复合薄膜的低温制备及其发光特性

用等离子体增强化学气相沉积法在低温 (低于 5 0℃ )衬底上沉积Si SiOx 和Si SiNx 复合薄膜 ,可得到平均颗粒尺寸小至 3nm的高密度 (最高可达 4 0× 10 1 2 cm- 2 )纳米硅复合薄膜 .5 0 0℃快速退火后 ,这种复合薄膜显现出优异的可见光全波段光致发光特性 .通过比较相同条件下所制备的纳米Si SiOx 和Si SiNx 复合薄膜的光致发光效率 ,发现纳米Si SiNx 具有更为优异的光致发光效率 ,这一点在可见光短波区表现得尤为显著     

Ar环境气压对纳米Si晶粒成核区范围的影响

为了研究不同环境气压条件下纳米Si晶粒成核区的范围,采用波长为308 nm的 XeCl脉冲准分子激光器,分别在1-200 Pa的Ar气环境下, 烧蚀高阻抗单晶Si靶,在距离烧蚀点正下方2.0 cm处水平放置一系列单晶Si 或玻璃衬底,沉积制备了纳米Si薄膜. Raman谱和X射线衍射谱测量证实了薄膜中纳米Si晶粒已经形成. 扫描电子显微镜的测量结果表明,环境气压的变化影响了衬底上纳米Si晶粒的平均尺寸及其分布范围. 根据成核区位置的确定方法,计算得出随着环境气压的增加纳米Si晶粒成核区的范围先变宽后变窄的规律. 从烧蚀动力学的角度对实验结果进行了分析.     

热蒸发法制备ZnO纳米棒阵列

氩气氛常压下，利用热蒸发法，在无催化剂、无ZnO预沉积层的硅衬底上制备了取向良好，排列整齐的ZnO纳米棒阵列．在距Zn源不同位置的Si衬底上得到了不同形貌的样品．硅衬底置于锌源正上方是得到取向一致的ZnO纳米阵列的一个关键性条件．用场发射扫描电子显微镜、X射线粉末衍射表征样品表面形貌、晶体结构．进一步研究了样品的生长机制和荧光性质．     

电子束蒸发法在多孔氧化铝膜上制备银纳米点阵列

采用二步阳极氧化法在草酸溶液中制备了高度有序的多孔阳极氧化铝(Porous Anodic Alumina,PAA)薄膜。以多孔氧化铝薄膜为模板,采用真空电子束蒸发的方法在多孔氧化铝模板上制备出了高度有序的金属银纳米点阵列体系。扫描电镜(SEM)测试结果表明,所制备的金属银纳米点阵列与多孔阳极氧化铝膜的多孔阵列具有完全相同的有序结构,阵列中银纳米颗粒的形状接近球形,其直径大约为70nm,与氧化铝模板的孔径基本一致。研究了高度有序银纳米点阵列的形成过程。     

Temperature dependence of a nanoporous Pd film hydrogen sensor based on an AAO template on Si

In this study, hydrogen sensing properties of nanoporous Pd films based on Anodic Aluminium Oxide (AAO) templates grown on a silicon substrate have been investigated at various temperatures (25–100°C) and hydrogen concentrations (100–1000 ppm) to determine the temperature-sensitivity relationship. For this purpose, a hexagonally shaped AAO template of approximately 50 nm in diameter and 700 nm in length with 80 nm interpore distances was fabricated using two-step anodization of an Al film deposited on an n-type (100) oriented oxidized Si substrate. Then, the nanoporous surface of the AAO template was used as a substrate for supporting a nanoporous Pd film of an approximately thickness of 60 nm. The morphologies of the AAO template and Pd film coated on the AAO template were studied mainly by Scanning Electron Microscopy (SEM). Hydrogen sensing properties of the nanoporous Pd film were measured using a resistance transient method. It was found that the sensor response of the nanoporous Pd films on the AAO template was better than the traditional Pd thin film sensors, the sensitivity of the sensor was approximately 1.8% for 1000 ppm H₂, and the detection limit was lower than 100 ppm at room temperature. The highest sensitivity was measured at room temperature.     

利用AAO模板制备银量子点

阳极氧化铝模板(Anodic Aluminum oxide,AAO)是一种具有纳米孔径的透明模板,其孔径在5-200nm范围内可控,孔径大小一致并且分布高度有序。利用阳极氧化铝模板制备量子点具有简单易行,能大规模生产的特点,同时能制备出尺寸大小可控的高度有序的量子点阵,这是其它方法很难做到的,有利于纳米材料及纳米器件的研究与合成。     

生长温度对ZnO薄膜晶体质量和发光特性的影响

采用激光脉冲沉积法在Si(100)衬底上生长ZnO薄膜,衬底温度分别为室温,200℃,300℃,400℃和500℃.用X射线衍射仪、拉曼光谱、扫描电子显微镜对薄膜的微结构进行了测量,并测量了室温下薄膜的光致发光特性.结果表明,300℃时.ZnO具有最佳择优取向,随着衬底温度升高.衍射峰半峰全宽减小,薄膜晶粒尺寸增大,400℃时,薄膜具有各向等大的品粒尺寸.同时拉曼谱结果显示,薄膜内部的缺陷随衬底温度变化无明显差别,应力表现为张应力,400℃时应力最小,紫外发光峰在衬底温度为400℃时最强,而黄绿光带最弱.在减少薄膜缺陷,提高择优长向和晶粒尺寸的同时.使晶粒横向尺寸和纵向尺寸尽可能相同,可极大提高薄膜的发光特性.     

CsPbBrI2量子点制备及其光探测器性能

采用热注入法制备空气稳定性良好的CsPbBrI2量子点,以375 nm的脉冲激光作为激发光源研究其光致发光性能.通过旋涂的方式制备相应薄膜,将其作为光敏层应用到光探测器,并对器件的光电子性能和稳定性进行详细研究.结果表明:CsPbBrI2量子点在635nm附近有强烈的荧光效应,光谱发光峰较窄,半峰宽约为35 nm.CsPbBrI2量子点禁带宽度为1.90eV,制备的探测器光检测带宽从紫外光260nm到红光650 nm,光响应度为0.26 A/W,高开/关比高达104,上升/衰减时间为3.5 ms/3.5 ms.在25℃,湿度在25%~35%大气环境下存储60天,性能与初始值相比几乎没有变化.CsPbBrI2量子点具有优异的稳定性、可制备高性能的宽带光检测和易于制造等优点,具备一定的应用前景.     

AAO模板吸收光谱变化及红移现象研究

阳极氧化铝(AAO)模板作为一种制备表面增强拉曼散射光谱(SERS)基底的工具被广泛使用。为了制备SERS效果更好的基底, 研究AAO模板自身的属性显得极为重要。本文以0.4 mol/L的草酸为电解液制备出高度有序的AAO模板。发现其吸收光谱在203、250、275 nm处有三个吸收峰, 其中203和275 nm处的吸收峰, 分别由F心(带两个电子的氧空位)和F+心(带一个电子的氧空位)产生。而250 nm处的吸收峰, 由制备过程中引入的草酸根离子产生。并给出了随着退火温度升高250、275 nm的吸收峰消失的合理解释。通过对不同氧化时间、氧化电压下制备的AAO模板吸收光谱的研究, 发现延长氧化时间对AAO模板吸收带边的红移影响不大, 而升高氧化电压则使AAO模板的吸收带边出现了明显红移。表明氧化电压的升高对AAO模板的内部结构及缺陷的变化影响极大。     

Surface-enhanced resonant Raman spectroscopy (SERRS) of single-walled carbon nanotubes absorbed on the Ag-coated anodic aluminum oxide (AAO) surface

In this paper, we developed a new kind of substrate, the silver-coated anodic aluminum oxide (AAO), to investigate the characters of surface-enhanced resonant Raman scattering (SERRS) of the dilute single-walled carbon nanotubes. Homogeneous Ag-coated AAO substrate was obtained by decomposing the AgNO₃ on the surface of AAO. single-walled carbon nanotubes (SWNTs) were directly grown onto this substrate through floating catalyst chemical vapor deposition method (CVD). SERRS of SWNTs was carried out using several different wavelength lasers. The bands coming from metallic SWNTs were significantly enhanced. The two SERRS mechanisms, the “electromagnetic” and “chemical” mechanism, were mainly responsible for the experiment results.     

Preparation and modification of well-aligned CNTs grown on AAO template

Anodic aluminum oxide (AAO) template was prepared by a two-step anodization method and cobalt particles were carefully deposited at the bottom of pores of the template. CVD method was used to grow carbon nanotubes (CNTs) on the template with this cobalt as catalyst and C₂H₂ as carbon source. Well-aligned carbon nanotubes were obtained perpendicular to the substrate. To modify the CNTs, ultrasonic treatment of the samples in alcoholic (or water) was applied and the results showed that the length of CNTs became equalized and their tips were opened without catalyst particles due to ultrasonically cutting off CNTs for the upper parts out of AAO pores. The mechanism is also discussed.     

强辐射源用铜纳米线阵列靶的结构与性能

 采用多孔阳极氧化铝（AAO）模板脉冲电沉积法制备了强辐射源用铜纳米线阵列靶,并用扫描电子显微镜（SEM）、能谱（EDS）和X射线衍射（XRD）对其进行了结构表征。结果表明：去除AAO模板后铜纳米线平均直径比去除AAO模板前的平均孔径大32%,长度缩短5%。对电沉积2 000 s的样品进行铜纳米线长度分布表征,结果显示:距离模板圆心越远,铜纳米线越长。与超短脉冲激光相互作用实验结果表明:纳米线平均长度在18~50 μm范围内,铜Kα光子产额先随纳米线长度增加而增加,当长度大于33 μm时,铜Kα光子产额开始下降。     

Femtosecond pulsed laser deposition of Ge quantum dot growth on Si(1 0 0)-(2 × 1)

Ge quantum dots were grown on Si(1 0 0)-(2 × 1) by femtosecond pulsed laser deposition at various substrate temperatures using a femtosecond Ti:sapphire laser. In situ reflection high-energy electron diffraction and ex situ atomic force microscopy were used to analyze the film structure and morphology. The morphology of germanium islands on silicon was studied at different coverages. The results show that femtosecond pulsed laser deposition reduces the minimum temperature for epitaxial growth of Ge quantum dots to ∼280 °C, which is 120 °C lower than previously observed in nanosecond pulsed laser deposition and more than 200 °C lower than that reported for molecular beam epitaxy and chemical vapor deposition.     

Synthesis of ordered ZnO nanowire arrays from aqueous solution using AAO template

In this paper we report a simple method that enables the easy fabrication of ordered ZnO nanowire arrays using Anodic Aluminium Oxide (AAO) template. We have used a vacuum injection technique to fill solution into the pores of an AAO template. The AAO template has been fabricated by a two-step anodization process using 0.3 M oxalic acid (H₂C₂O₄) solution under a constant voltage of 40 V. The AAO template formed through this process has been detached from Al substrate via an anodic voltage pulse using perchloric acid (HClO₄) solution (70%). The nanowires of ZnO have been synthesized by injecting the saturated Zn(NO₃)₂ solution into the pores of the detached AAO template using a vacuum pump. The ZnO nanowires synthesized by this technique have been found dense & continuous with uniform diameter throughout the length of the wire. The structural characteristics of AAO template and ZnO nanowires have been studied by Field Emission Scanning Electron Microscope (FESEM), Atomic force microscope (AFM) and Transmission Electron Microscope (TEM).