一氧化碳分立跃迁的光学振子强度和微分散射截面研究

在电子入射能量1500eV、平均散射角为0°和能量分辨为60meV条件下，得到了一氧化碳在7—21eV能量区间的绝对光学振子强度密度谱，获得了电子态A¹Π，B¹Σ⁺，C¹Σ⁺及E¹Π的各振动能级的绝对光学振子强度，通过与已发表的各实验和理论数据作比较，分析了差异的原因，并讨论了偶极(e,e)方法确定光学振子强度的局限性.同时还给出在电子入射能量1500eV时上述四个电子态的各 关键词：     

惰性气体原子对2500eV电子的绝对弹性散射微分截面

在入射电子能量为2500eV，散射角为4°—15°的条件下测量了氦、氖、氩的相对弹性散射微分截面，并采用非弹性散射的广义振子强度为标准进行刻度，得到了2500eV能量下的绝对弹性散射微分截面值.所得结果与前人的理论和实验结果作了比较. 关键词：     

氧分子的价壳层光学振子强度研究

在入射电子能量为1500eV、平均散射角为0°、能量分辨为60meV条件下，得到了氧分子在5.7—28.5eV能量区间的光学振子强度密度谱，获得了氧分子E³Σ^-_ｕ的ν′=0，1，2和2³Π_ｕ的ν′=0，1各振动能级的绝对光学振子强度，同时检验了我们的Bethe-Born转换因子外推到低能端的可靠性．将所得结果与前人的工作进行了比     

一氧化二氮的光电离质谱研究

在入射电子能量2500eV、 能量分放200meV的条件 下测量了一氧化二氮分子在7.8-24.5eV的光学振子强度密度谱和光电离质谱,报道了N2O^+、NO^+、O6+、N2^+和N^+等离子在较高能量分辨下的部分光学振 子强度密度,首次给出了一氧化二氮分子在13.0-21.0eV能区中性解离的振子强度密度。并在对这些数据进行分析的基础上阐述了一氧化二氮分子超激发态的不同退激发道的竞争过程。     

广义振子强度密度

根据Born近似,可以计算高能电子碰撞激发的总截面和微分截面。微分截面是和所谓的广义振子强度成正比的。电子碰撞过程可将靶原子或离子激发至无数的束缚态、自电离态和对应的连续态,多通道量子数亏损理论能够统一地处理这些激发态。因此可以定义每单位激发能内的广义振子强度为广义振子强度密度。本文以Li原子为例,总结其广义振子强度密度随激发能量和动量转移而变化的规律,并和最近精确的实验结果进行了比较,明确了Born近似的适用范围。 关键词：     

低能电子在固体表面背散射系数的直接Monte Carlo方法模拟

应用单次碰撞的直接Monte Cado方法计算能量范围从100 ev～10 keV的电子在固体Al,Si,Au表面的背散射系数,其中低能电子在固体中的弹性散射和非弹性散射截面分别应用Mott散射截面和Bom近似下的广义振子强度计算模型得到.通过与压缩历史Monte Carlo方法的模拟计算结果及实验值的比较,结果表明,对于100 eV～10 keV 范围的低能区电子,采用直接方法计算得到的电子背散射系数与实验值符合较好,直接方法比压缩历史方法更适合于能量在10 kev以下的电子输运计算.     

氩原子近LⅡ,Ⅲ边结构和振子强度密度

在入射电子能量2500eV，平均散射角为0°的条件下测量了氩原子内壳层2p电子激发和电离的高分辨电子能量损失谱，确定了分立态的有效量子数和电离边的能量．同时确定了两组分立跃迁和电离连续区的振子强度密度． 关键词：     

等电子系列离子的广义振子强度密度之标度关系

利用Born近似可以计算高能电子与原子或离子碰撞激发的微分截面和总截面。微分截面正比于广义振子强度。电子碰撞过程可将靶原子或离子激发到无数个束缚态以及相应的连续态。量子亏损理论能够统一处理这些激发态;因此可定义广义振子强度密度——即每单位激发能内的广义振子强度。我们计算了Li的等电子系列Li,Be⁺,B⁺⁺,C³⁺,Ne⁷⁺,Na⁸⁺,K¹⁶⁺等从基态到S,P,D,F通道的激发的广义振子强度密度,总结了类Li等电子系列离子的广义振子强度密度的标度关系。 关键词：     

相对流量技术及其在电子碰撞微分散射截面测量中的应用

为了提高原子分子动力学参数的测量精度,本文把气体相对流量技术应用到快电子碰撞研究中. 并且在此基础上测量了氙原子6s激发的广义振子强度,所得结果在小动量转移区间与前人的结果符合很好,表明气体相对流量技术在电子碰撞方法中的适用性. 大动量转移区间6s的表观广义振子强度对电子碰撞能量的依赖行为,说明500eV的电子碰撞能量还不满足一阶玻恩近似条件. 与Hartree-Fock方法相比,考虑电子关联效应更全面的随机相移近似计算结果与本文的实验结果符合更好,说明对于像Xe这样的重原子,电子关联效应十分重要.     

Kr原子4s自电离区和3d内壳层光学振子强度研究

用高分辨快电子能量损失谱方法研究了Kr原子4s内价壳层自电离区的光学振子强度, 说明了以前几家实验存在差异的原因, 并首次得到了3d内壳层激发的绝对光学振子强度.     

Electron scattering from trans 1,3-butadiene molecule: cross-sections, oscillator strength and VUV photoabsorption cross-sections

Electron energy-loss spectra for the butadiene molecule were measured in the scattering angular range of 2.0° to 8.0°, in an energy-loss range from 2 to 50 eV, using 1000 eV incident electrons. The absolute generalized oscillator strength (GOS) and inelastic cross section have been determined for the \hbox{$\tilde{\rm X}^{1}$}?X1A _g  → 1¹B _u transition. The absolute elastic differential cross section was also determined spanning an angular range from 2.0° to 40.0°. From a small angle electron energy-loss spectrum, the optical oscillator distribution (photoabsorption spectrum) for the butadiene molecule was obtained in the 2 to 100 eV photon energy range. Accurate ab initio calculations have been performed, within the First Born Approximation, for generalized oscillator strength (GOS) and excitation energies for the \hbox{$\tilde{\rm X}^{1}$}?X1A _g  → 1¹B _u and \hbox{$\tilde{\rm X}^{1}$}?X1A _g  → 2¹A _g transitions. Our results emphasize the importance of using highly correlated wavefunctions and accurate methodologies in the calculation of the GOS for electron impact-induced electronic transitions in molecules.     

Experimental and theoretical investigations of absolute optical oscillator strengths for valence excitations of nitric oxide

The absolute optical oscillator strength density spectra of nitric oxide in the energy region of 5.0－22.0 eV have been measured by a high-resolution fast-electron energy loss spectrometer. With the calculated results obtained by the multiscattering self-consistent-field method and channel characteristics, the strongly overlapped spectra in the energy region of 7.5－9.3 eV have been analysed and the corresponding partially vibrationally resolved optical oscillator strengths have been estimated from the experimental spectra.     

Absolute triple differential cross sections for electron impact ionization of helium: Comparison between experimental and theoretical results at 256 eV collision energy

Triple differential cross sections have been measured for electron impact ionization of helium at 256 eV collision energy, 3 eV energy of the slow outgoing electrons and scattering angles of the fast outgoing electrons of 4°, 6°, 8°, and 10°. The data have been put on absolute scale by extrapolating the generalized oscillator strength to zero momentum transfer. In this optical limit the triple differential cross sections can be normalized by using the well-known cross sections for photoionization. The experimental data are compared with results of different theoretical approaches. For nearly all calculated curves rather good agreement with the measurements is obtained for the relative shape of the binary peak, while often its absolute cross section is overestimated. Concerning the recoil peak, larger discrepancies are found with respect to both, relative shapes and cross sections. A perceptible improvement can be stated for calculations which have been performed in a distorted wave approximation and in second Born approximation.     

Generalized oscillator strengths for single ionization of Xe near the outer d-subshell threshold

We analyze new experimental and theoretical results for photon and electron impact ionization of Xe at energy transfers of 60 to 110 eV in terms of the generalized oscillator strength.     

Optical constants of Tl4Ga3InSe8 layered single crystals

The optical properties of Tl₄Ga₃InSe₈ layered single crystals have been studied by means of transmission and reflection measurements in the wavelength range of 500–1100 nm. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 1.94 and 2.20 eV, respectively. Transmission measurements carried out in the temperature range of 10–300 K revealed that the rate of change of the indirect band gap with temperature is γ=−4.1×10⁻⁴ eV/K. The absolute zero value of the band gap energy was obtained as E_gi(0)=2.03 eV. The dispersion of the refractive index is discussed in terms of the Wemple–DiDomenico single-effective-oscillator model. The refractive index dispersion parameters: oscillator energy, dispersion energy, oscillator strength and zero-frequency refractive index were found to be 4.10 eV, 23.17 eV, 6.21×10¹³ m⁻² and 2.58, respectively. From X-ray powder diffraction study, the parameters of monoclinic unit cell were determined.     

Optical properties of Tl2In2Se3S layered single crystals

The optical properties of Tl₂In₂Se₃S layered single crystals have been analyzed using transmission and reflection measurements in the wavelength region between 500 and 1100 nm. The optical indirect transitions with a band gap energy of 1.96 eV and direct transitions with a band gap energy of 2.16 eV were determined from analysis of absorption data at room temperature. Dispersion of the refractive index is discussed in terms of the Wemple–DiDomenico single-effective-oscillator model. The refractive index dispersion parameters – oscillator energy, dispersion energy, oscillator strength and zero-frequency refractive index – were found to be 4.67 eV, 45.35 eV, 1.38 × 10¹⁴ m ^{? 2} and 3.27, respectively. Transmission measurements were also performed in the temperature range 10–300 K. As a result of temperature-dependent transmission measurements, the rate of change in the indirect band gap with temperature, i.e. γ = ?5.6 × 10^?4 eV/K, and the absolute zero value of the band gap energy, E _gi(0) = 2.09 eV, were obtained.     

Total absorption and the energy dependence of the partial oscillator strengths for “photoionization” of the valence orbitals of H2O using an electron-electron coincidence method

Partial oscillator strengths (β dependent), from threshold to 49 eV, for the ionisation of 1b₁, 2a₁, 1b₂, 1a₁ electrons from the valence shell of water vapour have been determined using fast (3.5 keV) electron impact with coincidence detection of the scattered and ejected electrons. The total oscillator strength (photoabsorption) was determined from the forward scattered electron intensity and placed on an absolute basis by normalisation to a total f value of 8 for the valence shell.