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1.
叶超  宁兆元  程珊华 《物理学报》2001,50(10):2017-2022
用紫外可见光透射光谱(UV-VIS)并结合键结构的X射线光电子能谱(XPS)和红外谱(FTIR)分析,研究了电子回旋共振等离子体增强化学气相沉积法制备的氟化非晶碳薄膜的光吸收和光学带隙性质.在微波功率为140—700W、源气体CHF3∶C6H6比例为1∶1—10∶1条件下沉积的薄膜,光学带隙在1.76—2.85eV之间.薄膜中氟的引入对吸收边和光学带隙产生较大的影响,吸收边随氟含量的提高而增大,光学带隙则主要取决于CF键的含量,是由于强电负 关键词: 氟化非晶碳薄膜 光吸收与光学带隙 电子回旋共振等离子体  相似文献   

2.
戴永丰  江美福  杨亦赏  周杨 《物理学报》2011,60(11):118101-118101
用316L不锈钢(SU316L)作基片,以高纯石墨作靶、CHF3和Ar作源气体,采用反应磁控溅射法在不同流量比R (CHF3/Ar)下制备了氟化类金刚石(F-DLC)薄膜. 利用双蒸水液滴法、BCA(二喹啉甲酸)法和傅里叶红外光谱(FTIR)探讨了影响薄膜蛋白吸附能力的因素. 结果表明,镀有F-DLC薄膜的SU316L表面的血小板黏附量明显减少,血小板的变形程度显著减轻,相应的白蛋白与纤维蛋白原的吸附比普遍高于未镀膜的SU316L表面的相应值,说明镀上F-DLC薄膜可以改善样品的血液相容性. 流量比为2 ∶1左右时制备出的F-DLC薄膜,其白蛋白与纤维蛋白原的吸附比值达到最大,相应的血液相容性最佳. 对薄膜的接触角和表面能以及FTIR光谱分析研究表明,SU316L表面的F-DLC薄膜的白蛋白与纤维蛋白原的吸附比及血液相容性与薄膜的中的-CFx键的含量(F/C比)和表面能(疏水性)直接相关,控制源气体流量比可以实现对薄膜的血液相容性的调制. 关键词: 反应磁控溅射 氟化类金刚石薄膜 蛋白吸附  相似文献   

3.
研究氟化类金刚石(FDLC)薄膜化学结构对光学性能的影响,用等离子体增强化学气相沉积(PECVD)法在玻璃基底上沉积氟化类金刚石(FDLC)薄膜,用俄歇能谱、傅里叶红外光谱(FTIR)、紫外 可见光分光光度计 (UV-VIS)对薄膜进行分析。分析结果表明:沉积薄膜是典型的类金刚石结构,薄膜中氟主要以C-F2键存在;随着沉积温度的提高,C-F2含量先增后减;随着F含量的增加,FDLC薄膜的sp3含量减少,sp2含量增加;光学带隙与sp2键含量密切相关,sp2含量越大,薄膜的光学带隙越小。  相似文献   

4.
以高纯石墨作靶、氩气(Ar)和三氟甲烷(CHF3)为源气体,用反应磁控溅射法在不同射频功率下制备了氟化类金刚石碳(F-DLC)膜,并对其疏水性进行研究.双蒸水液滴与膜表面接触角的测试结果表明,所制备薄膜表面的最大水接触角可达115°左右.通过原子力显微镜获得的薄膜表面AFM图谱、拉曼光谱以及傅里叶变换红外光谱探讨了影响薄膜的疏水性的因素.结果表明,薄膜的疏水性与薄膜的表面粗糙度和表面键结构直接相关,表面粗糙度越大,疏水性越好,但与薄膜中的F含量和sp3/sp2的比值并未呈单调增加或减小的对应关系.射频输入功率影响着薄膜的沉积速率,与薄膜表面粗糙度、薄膜中芳香环单核的比例以及薄膜表面的键结构(F的接入方式)直接相关. 关键词: 疏水性 反应磁控溅射 氟化类金刚石膜 射频功率  相似文献   

5.
肖剑荣  徐慧  郭爱敏  王焕友 《物理学报》2007,56(3):1809-1814
以CF4,CH4和N2为源气体,采用射频等离子体增强化学气相沉积法,在不同射频功率下制备了含氮氟化类金刚石薄膜样品.原子力显微形貌显示,低功率下沉积样品表面致密均匀.拉曼及傅里叶变换红外光谱分析显示,随着射频功率的改变,薄膜的结构和组分也随之变化.紫外-可见光透射光谱证明薄膜具有紫外强吸收特性,通过计算得到其光学带隙在1.89—2.29 eV之间.结果表明,射频功率增加,薄膜内sp2C含量增加,或者说C=C交联相对浓度增加、F的相对浓度降低,导致薄膜内π-π*带边态密度增大,光学带隙减小. 关键词: 含氮氟化类金刚石薄膜 射频功率 光学带隙  相似文献   

6.
辛煜  宁兆元  甘肇强  陆新华  方亮  程珊华 《物理学报》2001,50(12):2492-2496
通过微波电子回旋共振等离子体化学气相沉积方法使用CH4/CHF3源气体制备a-C∶F∶H薄膜.红外结果表明,a-C∶F∶H薄膜随着流量比R=[CHF3]/[CHF3]+[CH4])的变化存在结构上的演变,R<64%时,薄膜主要是以类金刚石(DLC)特征的结构为主;当R>64%时,薄膜表现为一个类聚四氟乙烯(PTFE)的结构,结构单体主要为CF2.同时这种结构上的变化影响着薄膜 关键词: a-C∶F∶H薄膜 傅里叶变换红外光谱 紫外可见光谱  相似文献   

7.
李阳平  刘正堂  刘文婷  闫峰  陈静 《物理学报》2008,57(10):6587-6592
用射频磁控反应溅射法在ZnS衬底上制备了GeC薄膜,研究了工艺参数对Ge靶溅射及GeC薄膜红外透射性能的影响.衬底温度较低时GeC薄膜中含有H,形成了CH2,CH3,Ge-CH3等,使薄膜产生红外吸收;随衬底温度升高,薄膜红外吸收明显减小.靶基距、射频功率、Ar:CH4气体流量比、总气压对靶面中毒及溅射影响较大,但对GeC薄膜红外吸收影响较小.靶面中毒严重时,所制备无氢GeC薄膜附着性能差,随靶中毒减弱薄膜附着性能变好.优化工艺后,在ZnS衬底上制备了附着性能良好的无氢GeC薄膜,其折射率约为1.78,薄膜中C的含量比Ge的大,二者主要形成了C—Ge键.所制备的GeC/GaP红外增透保护膜系对ZnS衬底有良好的增透效果. 关键词: GeC薄膜 红外透射光谱 射频磁控溅射 XPS  相似文献   

8.
采用螺旋波等离子体化学气相沉积技术以N2/SiH4/H2为反应气体制备了镶嵌有纳米非晶硅颗粒的氢化氮化硅薄膜,通过改变N2流量实现了薄膜从红到蓝绿的可调谐光致发光.傅里叶红外透射和紫外-可见光吸收特性分析表明,所生长薄膜具有较高的氢含量,N2流量增加使氢的键合结构发生变化,非晶硅颗粒尺寸减小,所对应的薄膜的光学带隙逐渐增加和微观结构有序度减小.可调光致发光(PL)主要来源于纳米硅颗粒的量子限制效应发光,随N2流量增加,PL的谱线展宽并逐渐增强. 关键词: 傅里叶红外透射谱 光吸收谱 纳米硅粒子镶嵌薄膜 光致发光  相似文献   

9.
宁兆元  程珊华  叶超 《物理学报》2001,50(3):566-571
使用CHF3和C6H6混合气体做气源,在一个电子回旋共振等离子体增强化学气相沉积装置中制备了氟化非晶碳(a-CFx)薄膜.利用发射光谱研究了等离子体中形成的各种碳氟、碳氢基团随放电宏观参量的变化规律,对薄膜做了傅里叶变换红外光谱和X射线光电子能谱分析,证实等离子体中的CF2,CF和CH基团是控制薄膜生长、碳/氟成分比和化学键结构的主要前驱物 关键词: 氟化非晶碳薄膜 电子回旋共振等离子体  相似文献   

10.
王培君  江美福  杜记龙  戴永丰 《物理学报》2010,59(12):8920-8926
以高纯石墨做靶,CHF3和Ar气为源气体,采用射频反应磁控溅射法在不同流量比条件下制备了氟化类金刚石(F-DLC)薄膜.利用原子力显微镜、纳米压痕仪、拉曼光谱和红外光谱、摩擦磨损测试仪对薄膜的表面形貌、硬度、键结构以及摩擦性能做了具体分析.表面形貌测试结果表明,制备的薄膜整体均匀致密,表现出了良好的减摩性能.当CHF3与Ar气流量比r为1:6时,所得薄膜的摩擦系数减小至0.42,而纳米压痕结果显示,此时薄膜的硬度也最高.拉曼和红外光谱显示,随着r的增加,薄膜中的F浓度呈上升趋势,薄膜中的芳香环比例减小.研究表明,F原子的键入方式是影响F-DLC薄膜摩擦系数的一个重要因素,CF2反对称伸缩振动强度的减弱和CC中适量碳氢氟键的形成都能导致薄膜具有相对较低的摩擦系数.  相似文献   

11.
用直流磁控溅射法制备了非晶C薄膜及N掺杂非晶C(a-C∶N)薄膜,用紫外-可见分光光谱仪、椭圆偏振仪、俄歇电子能谱(AES)等对薄膜进行了检测。结果表明:随源气体中N气含量的增加,透过率和折射率变小,而光学带隙先增大后减小;当薄膜中N的含量很少,N的掺入对sp3杂化C起稳定作用,使得薄膜光学带隙Eg增大。而较高量N的掺入抑制了sp3杂化C的形成,提高了薄膜中sp2键含量,使得薄膜光学带隙变小。参数D定义为俄歇电子能谱(AES)中最大正峰和最低负峰之间的距离,用俄歇电子能谱中的D值来计算薄膜的sp2键的百分含量,俄歇电子能谱(AES)表征也表明:较高量的N的掺入抑制了sp3杂化C的形成。所以应该考虑在较低N分压条件下掺N来改善非晶C薄膜的光学性能。  相似文献   

12.
以氯化铵、氯化镉、氢氧化钾和硫脲为反应物采用化学水浴法制备了硫化镉薄膜,为了作对比研究,采用射频磁控溅射以硫化镉为靶材,氩气为溅射气体,制备了硫化镉薄膜。采用X射线衍射、扫描电子显微镜和紫外-可见光光谱仪分别表征了硫化镉薄膜的结构、形貌和光学吸收特性。结果表明,采用以上两种方法制备的硫化镉均具有(002)择优取向,溅射法制备的硫化镉薄膜较致密,薄膜表面较光滑,平均晶粒尺寸在20~30nm;水浴法制备的硫化镉薄膜颗粒尺寸较小,缺陷较多。除了在短波段溅射所得硫化镉薄膜的透过率略差于水浴法所得硫化镉薄膜之外,溅射法制备的硫化镉薄膜的性能整体上优于水浴法制备的薄膜。两种方法制备的硫化镉薄膜的能隙在2.3~2.5eV。  相似文献   

13.
Zn2SnO4 (ZTO) is a stable semiconductor in ZnO–SnO2 system and important transparent conducting oxide (TCO) predominantly used in optoelectronic devices. ZTO thin films were prepared by RF magnetron sputtering using Zn2SnO4 ceramic target in this paper. The effects of annealing temperatures and oxygen contents on characterization of ZTO thin films were studied. The results show that ZTO thin films prepared by RF magnetron sputtering are amorphous with an optical band gap of 3.22 eV. After annealing at 650°C in Ar atmosphere for 40 min, ZTO films possess a spinel structure with an optical band gap of 3.62 eV. The atomic force microscope (AFM) data of morphology reveals that the surface roughness of films is about 2 nm. The results of energy dispersive spectrometer (EDS) show that the concentration ratio of Zn to Sn is in the range from 1.44 to 1.57. The results of Hall-effect-measurement system reveal that the resistivity of films varies from 102 to 10–1 Ωcm, carrier concentration is about 1017 cm–3, and mobility ranges from 100 to 101 cm2 v–1 s–1.  相似文献   

14.
Nanocrystalline compound thin films of ZnO-TiO2 with different Zn/Ti atomic ratios were prepared by radio frequency magnetron reactive sputtering. The optical constants and the optical band gap were investigated using spectroscopic ellipsometry and the optical absorption spectrum. It was found that the cubic ZnTiO3 phase can be obtained with the atomic ratio of Zn to Ti of about 1:1, and transforms to rhombohedral ZnTiO3 phase and a phase mixture of rhombohedral ZnTiO3 and ZnO with increasing Zn content. The refractive index decreases with the increase of Zn content, and the extinction coefficient in the visible range is near zero. The optical band gap was derived from the modeling of ellipsometry data and extinction coefficient spectra, and compared with that obtained from optical absorption spectrum, and it was found that the optical band gaps obtained by these three methods are consistent with each other. PACS 42.70.-a; 68.55.Jk; 78.20.Ci; 81.15.Cd  相似文献   

15.
Zinc-indium-oxide (ZIO) films were deposited on non-alkali glass substrates by RF superimposed DC magnetron sputtering with a ZIO (9.54 wt% In2O3 content) high-density, sintered target at room temperature. The electrical, structural and optical properties of the ZIO films deposited with different sputtering parameters were examined. The total power for RF superimposed DC magnetron sputtering was 80 W. The RF power ratio in the total sputtering power was changed from 0 to 100% in steps of 25%. The ZIO films deposited with a 100% RF discharge showed the lowest resistivity, 1.28×10−3 Ω cm, due to the higher carrier concentration. The ZIO film deposited at 50% RF power showed a relatively larger grain size and smaller FWHM. XPS suggested an increase in the level of In3+ substitution for Zn2+ in the ZnO lattice with increasing RF/(DC+RF) due to the low damage process. The average transmittance of all ZIO films in the visible light region was >80%. The increasing RF power portion of the total sputtering power led to a broadening of the optical band gap, which was attributed to the increase in carrier density according to Burstein-Moss shift theory.  相似文献   

16.
TiO2 thin films were deposited onto quartz substrates by RF magnetron sputtering. The samples deposited at various RF powers and sputtering pressures and post annealed at 873 K, were characterized using X-ray diffraction (XRD), micro Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), UV-vis spectroscopy and photoluminescence (PL) spectroscopy. XRD spectrum indicates that the films are amorphous-like in nature. But micro-Raman analysis shows the presence of anatase phase in all the samples. At low sputtering pressure, increase in RF power favors the formation of rutile phase. Presence of oxygen defects, which can contribute to PL emission is evident in the XPS studies. Surface morphology is much affected by changes in sputtering pressure which is evident in the SEM images. A decrease in optical band gap from 3.65 to 3.58 eV is observed with increase in RF power whereas increase in sputtering pressure results in an increase in optical band gap from 3.58 to 3.75 eV. The blue shift of absorption edge in all the samples compared to that of solid anatase is attributed to quantum size effect. The very low value of extinction coefficient in the range 0.0544-0.1049 indicates the excellent optical quality of the samples. PL spectra of the films showed emissions in the UV and visible regions.  相似文献   

17.
The optical properties of hexagonal boron nitride(h-BN) thin films were studied in this paper.The films were characterized by Fourier transform infrared spectroscopy,UV-visible transmittance and reflection spectra.h-BN thin films with a wide optical band gap Eg(5.86 eV for the as-deposited film and 5.97 eV for the annealed film) approaching h-BN single crystal were successfully prepared by radio frequency(RF) bias magnetron sputtering and post-deposition annealing at 970 K.The optical absorption behaviour of h-BN films accords with the typical optical absorption characteristics of amorphous materials when fitting is made by the Urbach tail model.The annealed film shows satisfactory structure stability.However,high temperature still has a significant effect on the optical absorption properties,refractive index n,and optical conductivity σ of h-BN thin films.The blue-shift of the optical absorption edge and the increase of Eg probably result from stress relaxation in the film under high temperatures.In addition,it is found that the refractive index clearly exhibits different trends in the visible and ultraviolet regions.Previous calculational results of optical conductivity of h-BN films are confirmed in our experimental results.  相似文献   

18.
TiO2/Al2O3/TiO2/Al2O3 multilayer structures were obtained at different oxygen:argon gas ratios of 20:80, 30:70, 50:50 and 60:40 sccm and constant rf power of 200 W using reactive magnetron sputtering. Grain size and elemental distribution in the films were studied from AFM image and XPS spectra respectively. The deposited grain size increased with increasing oxygen:argon gas ratio. The optical band gap, refractive index, extinction coefficient were calculated from UV-vis transmittance and reflectance spectra. It was observed that the value of refractive index, extinction coefficient and band gap increased with increasing oxygen. These variations are due to the defects levels generated by the heterostructure and explained by the PL spectrum. The antireflecting (AR) efficiency of the films was estimated from the reflectance spectra of the films. Broad band antireflecting coating for the visible range was achieved by varying oxygen content in the film. The plasma chemistry controlled the antireflecting property by the interface interdiffusion of atoms during layer transition in multilayer deposition. The in situ investigation of the plasma chemistry was performed using optical emission spectroscopy. The plasma parameters were estimated and correlated with the characteristics of the films.  相似文献   

19.
利用微波电子回旋共振(MW ECR)等离子体增强非平衡磁控溅射法制备了碳氮化硅(SiCN)薄膜。研究结果表明:硅靶溅射功率和氮气流量对薄膜化学结构、光学、力学等性能有很大影响。傅里叶变换红外光谱(FT IR)和X射线光电子能谱(XPS)表征显示,随着硅靶溅射功率由150W增加到350W,薄膜中C Si N键含量由14.3%增加到43.6%; 氮气流量的增大(2~15sccm)易于形成更多的sp2C=N键和sp1C≡N键。在改变硅靶溅射功率和氮气流量的条件下,薄膜光学带隙最大值分别达到2.1eV和2.8eV。  相似文献   

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