High temperature thermoelectric properties of highly c-axis oriented Bi₂Sr₂Co₂O_y thin films fabricated by pulsed laser deposition

High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co2Oy thin films prepared by pulsed laser deposition on LaAlO3(001).Both the electric resistivity ρ and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m·Ω· cm and 202 μV/K at 980 K,resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples.A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature.The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application in high temperature thin film thermoelectric devices.     

High temperature thermoelectric properties of highly c-axis oriented Bi2Sr2Co2Oy thin films fabricated by pulsed laser deposition

High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co20v thin films prepared by pulsed laser deposition on LaA1Oa （001）. Both the electric resistivity p and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m. cm and 202 V/K at 980 K, resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples. A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature. The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application has high temperature thin film thermoelectric devices,     

Effect of microstructure on the thermoelectric properties of CSD-grown Bi2Sr2Co2Oy thin films

Three Bi2Sr2Co2Oy thin films with different microstructures have been prepared by chemical solution deposition on LaAlO 3(001) through varying the annealing temperature.With the decrease in the annealing temperature,both the size and c-axis alignment degree of grains in the film decrease as well,leading to an increase in the film resistivity.In addition,the decrease in the annealing temperature also results in a slight increase in the Seebeck coefficient due to the enhanced energy filtering effect of the small-grain film.The nanostructured Bi2Sr2Co2Oy film with an average grain size of about 100 nm shows a power factor comparable to that of films with larger grains.Since the thermal conductivity of the nanostructured films can be depressed due to the enhanced phonon scattering by grain boundary,a higher figure of merit is expected in Bi2Sr2Co2Oy thin film with grains in nanometer size.     

Lateral photovoltaic effects in Bi2Sr2Co2Oy thin films

Lateral photovoltaic （LPV） effects are observed in Bi2Sr2Co2Oy （BSCO） thin fihns. Upon illumination of a 532-111n constant laser, the lateral photovoltage is observed to vary linearly with tile laser position between two electrodes on tile film surface, and the position sensitivity can be enhmlced by coating a layer of graphite on the surface of the BSCO film as a light absorber. Results suggest that the LPV effect ill the thin fihn is independent of the photo-generated carriers but originates from thermoelectric effects. The present work demonstrates a potential application of BSCO films in position-sensitive photo （thermal） detectors.     

Transport and magnetoresistance effect in an oxygen-deficient SrTiO_3/La_(0.67)Sr_(0.33)MnO_3 heterojunction

An oxygen-deficient SrTiO3/La0.67Sr0.33MnO3 heterojunction is fabricated on an SrTiO3 （001） substrate by a pulsed laser deposition method. The electrical characteristics of the heterojunction are studied systematically in a temperature range from 80 K to 300 K. The transport mechanism follows I ∝ exp （eV/nkT） under small forward bias, while it becomes space charge limited and follows I ∝ Vm（T） with 1.49〈 m 〈1.99 under high bias. Such a heterojunction also exhibits magnetoresistance （MR） effect. The absolute value of negative MR monotonically increases with temperature decreasing and reaches 26.7% at 80 K under H=0.7 T. Various factors, such as strain and oxygen deficiency play dominant roles in the characteristics.     

Rectifying and Photovoltage Properties of ZnO:Al/p-Si Heterojunction

An Al-doped ZnO/p-Si heterojunction is fabricated by a laser molecular beam epitaxy technique. The abnormally high ideality factors （n 〉〉 2） of the prepared heterojunction are observed in the interim bias voltage range. A theoretical model is proposed to understand the much higher ideality factor of the special heterojunction diode. The ZnO：Al film shows metal-like conductivity with the electrical resistivity about 6.56 × 10-4 Ω·cm at room temperature. The temperature dependence of the photovoltage indicates that the photovoltaic effect of the Al-doped ZnO based heterojunction can be changed by the intrinsic metal-semiconductor transition at 120 K.     

Photoelectric property of LaAlO3-δ/Si heterojunctions with different oxygen contents

Three oxide heterojunctions made of LaAlO_3-δ/Si are fabricated under various oxygen pressures by laser molecular-beam epitaxy. They all show nonlinear and rectifying current--voltage characteristics, and the distinct difference in rectification behaviour among them. Their photoelectric properties are examined by a visible HeNe laser and an ultraviolet Hg lamp. We find that their photovoltaic responses are closely related to the oxygen contents in the LaAlO_3-δ films. The junction fabricated under the lower oxygen pressure has a higher photovoltaic sensitivity. The possible mechanism is suggested based on the band structure of the p--n heterojunction.     

Current transport in ZnO/Si heterostructure grown by laser molecular beam epitaxy

The n-ZnO/p-Si heterojunction was fabricated by depositing high quality single crystalline aluminium-doped n-type ZnO film on p-type Si using the laser molecular beam epitaxy technique. The heterojunction exhibited a good rectifying behavior. The electrical properties of the heterojunction were investigated by means of temperature dependence current density-voltage measurements. The mechanism of the current transport was proposed based on the band structure of the heterojunction. When the applied bias V is lower than 0.15 V, the current follows the Ohmic behavior. When 0.15V 0.6 V), the space charge limited effect becomes the main transport mechanism. The current-voltage characteristic under illumination was also investigated. The photovoltage and the short circuit current density of the heterojunction aproached 270 mV and 2.10 mA/cm 2 , respectively.     

Sr3Bi（PO4）3：Eu^2＋ Luminescence,Concentration Quenching and Crystallographic Sites

A blue emitting phosphor Sr3Bi（PO4）3：Eu2＋ is synthesized luminescent property is investigated. Sr3Bi（PO4 ）3 ：Eu^2＋ can by a high-temperature solid state method, and its create blue emission under the 332 radiation excitation, and the prominent luminescence in blue （423nm） due to the 4fSd^1→4f^7 transition of the Eu^2＋ ion. The crystallographic sites of the Eu^2＋ ion in Sr3Bi（PO4）3 are analyzed, and the 420 and 440 nm emission peaks of the Eu^2＋ ion are assigned to the nine-coordination and eight-coordination, respectively. The emission intensity of Sr3Bi（PO4）3：Eu^2＋ is influenced by the Eu^2＋ doping content, and the concentration quenching effect is observed. The quenching mechanism is the dipole-dipole interaction, and the critical distance of energy transfer is calculated by the concentration quenching method to be approximately 1.72nm.     

Ultrafast Photoelectric Effects in Heterojunctions of La0.7Sr0.3MnO3 and Si

Ultrafast photoelectric effects have been observed in p-n heterojunctions of La0.7Sr0.3MnO3(LSMO)/Si and LSMO/SrTiO3_/Si for the first time. The rise time was about 1 ns and the full width at half maximum was about 2ns for the photovoltaic pulse when the heterojunction was irradiated by a laser of -25 ps pulse duration and 1064 nm wavelength. The photovoltaic sensitivity was as large as 435 mV//mJ for a 1064 nm laser pulse. No such pulse was observed with irradiation from a pulsed 10.6 μm CO2 laser.     

Bi2Sr2Co2O8体系中Pb替代及I插层对其结构和物性的影响

自今年3月在NaxCo2O4 Yh2o中发现超导电性以来,具有层状结构的Co系氧化物又受到人们广泛的关注.本文在成功合成具有misfit层状结构Bi2Sr2Co2Oy单相样品的基础上,通过Pb对Bi的部分替代、以及I的插层,成功地使其c轴由1.49nm增至1.87nm,并对其输运性质和磁性质进行了系统研究.结果发现:Pb的部分替代并没有使该体系的电阻-温度关系行为发生显著变化,但在低温下使样品呈现自旋玻璃态行为;I的插入不仅使其c轴长度增加,而且样品变为半导体,并不呈现超导电性,在低温下同样呈现自旋玻璃态行为.同时对Pb替代及I插层效应进行了讨论.     

Bi_2Sr_2CaCu_2O_(8+δ)单晶的钉扎力标度和磁通钉扎机制

测量了 Bi2 Sr2 Ca Cu2 O8+δ单晶不同温度下的磁化曲线。根据 Bean临界态模型得到了不同温度下的钉扎力密度 FP 对磁场的依赖关系 ,发现在不同温度下的钉扎力密度可以标度在同一条曲线上。标度函数和最大钉扎力所对应的磁场与不可逆场 Hirr的比值都表明 Si2 Sr2 Ca Cu2 O8+δ单晶在磁通玻璃态的钉扎机制主要是正常相面钉扎。     

Photoelectric Characteristic of La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 p-n Heterojunctions

Good rectifying current-voltage characteristics and nanosecond photoelectric effects are observed in the p-n hereto junctions of La0.9Sr0.1 MnO3/SrNb0.01 Ti0.99O3 fabricated by laser molecular beam epitaxy. The rise time is about 26ns and the full width at half maximum is about 125ns for the open-circuit, photovoltaic pulses when the La0.9Sr0.1MnO3 film in the heterojunction is irradiated by a laser operated at wavelength 308nm with pulse duration of about 25 ns. A qualitative explanation is presented, based on an analysis of the photoelectric effect of p-n hereto junction.     

Rectifying and photovoltaic properties of ZnCo2O4/Si heterostructure grown by pulsed laser deposition

ZnCo2O4/Si heterostructures have been fabricated by a pulsed laser deposition method, and their transport behaviors and photovoltaic properties have been characterized. The ZnCo2O4/Si heterostructures show a good rectifying behavior at five different temperatures ranging from 50 K to 290 K. The measurements of the photovoltaic response reveals that a photovoltage of 33 mV is generated when the heterostructures are illuminated by a 532 nm laser of 250 mW/cm2and mechanically chopped at 2500 Hz. Both the photocurrent and the photovoltage clearly increase with the increase of the laser intensity at room temperature. However, the heterostructures' photovoltage peak decreases with the increase of the temperature. This work may open new perspectives for ZnCo2O4/Si heterostructure-based devices.     

Closing the pseudogap by Zeeman splitting in Bi2Sr2CaCu2O8+y at high magnetic fields.

Interlayer tunneling resistivity is used to probe the low-energy density-of-states (DOS) depletion due to the pseudogap in the normal state of Bi2Sr2CaCu2O8+y. Measurements up to 60 T reveal that a field that restores DOS to its ungapped state shows strikingly different temperature and doping dependencies from the characteristic fields of the superconducting state. The pseudogap closing field and the pseudogap temperature T small star, filled evaluated independently are related through a simple Zeeman energy scaling. These findings indicate a predominant role of spins over the orbital effects in the formation of the pseudogap.     

(Bi,Pb)_2Sr_2CaCu_2O_y单晶的磁通钉扎研究

我们通过对重Pb掺杂的Bi-2212((Bi,Pb)-2212)单晶磁化性质的测量来研究磁通钉扎性能,发现样品中存在与温度有明显依赖关系的鱼尾效应,且此鱼尾效应不仅体现在磁滞洄线上,还体现在不同磁场下零场冷的M～T曲线的交叠上.同时我们采用非线性磁通蠕动模型,并考虑表面位垒和体钉扎的影响,运用数值模拟分析了样品的磁化性质,结果表明(Bi,Pb)-2212单晶的鱼尾效应源于重Pb掺杂导致样品各向异性的降低所引起的强的体钉扎效应,而高温的磁化性质主要取决于表面位垒的作用.     

High critical temperature by resonant quantum confinement: Evidence for polarons ordering at T *≈1.5T c in Bi-2212 and La-214 by EXAFS

Il Nuovo Cimento D - The temperature dependence of local Cu site conformations in single-domain crystals of Bi2Sr2CaCu2O8+y (Bi-2212) and La1.85Sr0.15CuO4 (La-214) has been determined by EXAFS...     

Persistence of strong electron coupling to a narrow boson spectrum in overdoped Bi2Sr2CaCu2O(8+delta) tunneling data

A d-wave, Eliashberg analysis of break-junction and STM tunneling spectra on Bi2Sr2CaCu2O(8+delta) (Bi2212) reveals that the spectral dip feature is directly linked to strong electronic coupling to a narrow boson spectrum, evidenced by a large peak in alpha2F(omega). The tunneling dip feature remains robust in the overdoped regime of Bi2212 with bulk T(c) values of 56 K-62 K. This is contrary to recent optical conductivity measurements of the self-energy that suggest the narrow boson spectrum disappears in overdoped Bi2212 and therefore cannot be essential for the pairing mechanism. The discrepancy is resolved by considering the way each technique probes the electron self-energy, in particular, the unique sensitivity of tunneling to the off-diagonal or pairing part of the self-energy.