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1.
This paper investigates the effect of O2 plasma treatment on the electric property of Cu/SiCOH low dielectric constant (low-k) film integrated structure. The results show that the leakage current of Cu/SiCOH low-k integrated structure can be reduced obviously at the expense of a slight increase in dielectric constant k of SiCOH films. Bythe Fourier transform infrared (FTIR) analysis on the bonding configurations of SiCOH films treated by O2 plasmar it is found that the decrease of leakage current is related to the increase of Si-O cages originating from the linkage of Si dangling bonds through O, which makes the open pores sealed and reduces the diffusion of Cu to pores.  相似文献   

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This paper investigates the capacitance-voltage(C-V) characteristics of F doping SiCOH low dielectric constant films metal-insulator-semiconductor structure.The F doping SiCOH films are deposited by decamethylcyclopentasiloxane(DMCPS) and trifluromethane(CHF3) electron cyclotron resonance plasmas.With the CHF3/DMCPS flow rate ratio from 0 to 0.52,the positive excursion of C-V curves and the increase of flat-band voltage VFB from 6.1 V to 32.2 V are obtained.The excursion of C-V curves and the shift of VFB are related to the change of defects density and type at the Si/SiCOH interface due to the decrease of Si and O concentrations,and the increase of F concentration.At the CHF3/DMCPS flow rate ratio is 0.12,the compensation of F-bonding dangling bond to Si dangling bond leads to a small VFB of 2.0 V.  相似文献   

3.
叶超  宁兆元 《中国物理 B》2010,19(5):57701-057701
This paper investigates the capacitance-voltage (C-V) characteristics of F doping SiCOH low dielectric constant films metal-insulator-semiconductor structure. The F doping SiCOH films are deposited by decamethylcyclopentasilox-ane [DMCPS) and trifluromethane (CHF3) electron cyclotron resonance plasmas. With the CHF3/DMCPS flow rate ratio from 0 to 0.52, the positive excursion of C-V curves and the increase of fiat-band voltage VFB from -6.1 V to 32.2V are obtained. The excursion of C-V curves and the shift of VFB are related to the change of defects density and type at the Si/SiCOH interface due to the decrease of Si and O concentrations, and the increase of F concentration. At the CHF3/DMCPS flow rate ratio is 0.12, the compensation of F-bonding dangling bond to Si dangling bond leads to a small VFB of 2.0V.  相似文献   

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Transient thermal grating method is used to measure the thermal diffusivity of absorbing films deposited on transparent substrates. According to periodically modulated dielectric constant variations and thermoelastic deformations of the thin films caused by the transient thermal gratings, an improved optical diffraction theory is presented. In the experiment, the probing laser beam reflectively diffracted by the thermal grating is measured by a photomultiplier at different grating fringe spaces. The thermal diffusivity of the film can be evaluated by fitting the theoretical calculations of diffraction signals to the experimental measured data. The validity of the method is tested by measuring the thermal diffusivities of absorbing ZnO films deposited on glass substrates.  相似文献   

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We investigate the intermediate gas phase in the CHFs 13.56 MHz/2 MHz dual-frequency capacitively couple plasma (CCP) for the SiCOH low dielectric constant (low-k) film etching, and the effect of 2MHz power on radicals concentration. The major dissociation reactions of CHF3 in 13.56MHz CCP are the low dissociation bond energy reactions, which lead to the low F and high CF2 concentrations. The addition of 2MHz power can raise the probability of high dissociation bond energy reactions and lead to the increase of F concentration while keeping the CF2 concentration almost a constant, which is of advantage to the SiCOH low-k films etching. The radical spatial uniformity is dependent on the power coupling of two sources. The increase of 2 MHz power leads to a poor uniformity, however, the uniformity can be improved by increasing 13.56 MHz power.  相似文献   

6.
Amorphous La-doped Al2O3 (La: Al2O3) thin films are deposited on n-type (100) Si substrates by rf magnetron co-sputterlng. The composition of the deposited films is measured by energy dispersive x-ray spectroscopy: Capacitance-voltage measurement shows that the dielectric constant k of La-doped Al2O3 films ranges from 8.5 to 11.6 with the increasing La content, and the highest k value of 11.6 is obtained for the 20.14% La content film. In the structure of the Al/La:Al2O3/Si metal oxide semiconductor, the dominant conduction stems from the space- charge-limited current at different temperatures. In addition, the wavelength dependence of the transmittance is studied by ultraviolet spectroscopy and the band gap of all the deposited films is above 5.5eV. The results demonstrate that La-doped Al2O3 can meet the requirement of next-generation gate materials.  相似文献   

7.
We investigate the fragmentation behaviour of decamethylcyclopentasiloxane (DMCPS) plasma using a quadrupole mass spectrometry, which is used as the precursor to deposit SiCOH film in an electron cyclotron resonance (ECR) plasma system. The structure of DMCPS molecules comprises a fivefold Si-O ring and ten -CH3 groups bonded at five Si atoms. In ECR discharge plasma, the main fragmentation behaviour of DMCPS includes two stages. One is the breaking of fivefold Si-O rings and then the formation of threefold Si-O rings and Si-O chain species. The other is the decomposing of hydrocarbon groups from Si atoms and then the crosslink of hydrocarbon species. Combined with the bonding configuration of SiCOH films, the relation between species in ECR plasma and films structures is analysed.  相似文献   

8.
TiO2 and ZrO2 films are deposited by electron-beam (EB) evaporation and by sol-gel process. The film properties are characterized by visible and Fourier-transform infrared spectrometry, x-ray diffraction analysis, surface roughness measure, absorption and laser-induced damage threshold (LIDT) test. It is found that the sol-gel films have lower refractive index, packing density and roughness than EB deposited films due to their amorphous structure and high OH group concentration in the film. The high LIDT of sol-gel films is mainly due to their amorphous and porous structure, and low absorption. LIDT of EB deposited film is considerably affected by defects in the film, and LIDT of sol-gel deposited film is mainly effected by residual organic impurities and solvent trapped in the film.  相似文献   

9.
The 0.9Pb(Sc0.5Ta0.5)O3–0.1PbTiO3/0.55Pb(Sc0.5Ta0.5)O3–0.45 PbTiO3 multilayer thin films((PSTT10/45)n, n = 1–6, 10) are deposited on SiO2/Si(100) substrates by radio frequency magnetron sputtering technique with La Ni O3 buffer and electrode layer, and the films are subsequently annealed by a two-step rapid thermal approach. It is found that the interfacial density of the film has an important influence on the electric property of the film. The electric property of the film increases and reaches its critical point with the increase of interface density, and then decreases with the further increase of the interface density. With an interfacial density of 16 μm-1, the film shows an optimized dielectric property(high dielectric constant, εr = 765, lowest dielectric loss, tan δ = 0.041, at 1 k Hz) and ferroelectric property(highest remnant polarization,2Pr = 36.9 μC/cm2, low coercive field, 2Ec = 71.9 k V/cm). The possible reason for the electric behavior of the film is the competition of the interface stress with the interface defect.  相似文献   

10.
The influence of N2 plasma annealing on the properties of fluorine doped silicon oxide (SiOF) films is investigated.The stability of the Dielectric constant of SiOF film is remarkably improved by the N2 plasma annealing.After enduring a moisture absorption test for six hours in a chamber with 60% humidity at 50℃,the dielectric constant variation of the annealed SiOF films is only 1.5%,while the variation for those SiOF films without annealing is 15.5%.Fourier transform infrared spectroscopic results show that the absorption peaks of Si-OH and H-OH of SiOF films are reduced after the N2 plasma annealing because the annealing can wipe off some unstable Si-F2 bonds in SiOF films.These Unstable Si-F2 bonds are suitable to react with water,resulting in the degradation of SiOF film properties.Therefore,the N2 plasma annealing meliorates the properties of SiOF films with low dielectric constant.  相似文献   

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Journal of Statistical Physics -  相似文献   

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Journal of Statistical Physics -  相似文献   

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