共查询到16条相似文献，搜索用时 46 毫秒
1.
Ag-BaO薄膜是金属纳米微粒埋藏于半导体介质中的功能复合薄膜,它具有超快的光电时间响应,可以检测超短激光脉冲,在Ag-BaO薄膜表面加入垂直电场,可以提高薄膜的光电发射效率,在垂直表面电场作用下近紫外波段光吸收有较明显增强现象,在波长λ=303nm处15V电压作用下光吸收增强6.5%,30V电压作用下增强18%。这种光吸收增强是由于在电场作用下,薄膜的能带结构发生倾斜,以及在强电场下能级分裂。光吸收涉及被激发电子在倾斜能带间隧穿几率的增加,和被激发电子在这些分裂能级间的跃迁。 相似文献
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Ag-BaO薄膜在电场作用下的可见——近红外波段光学吸收特性 总被引：2，自引：0，他引：2
对超额Ba激活的Ag-BaO复合薄膜在外加垂直表面电场作用下的光学吸收特性进行了测量.结果显示,薄膜在可见—近红外光波段存在两个吸收峰,其中近红外光区的吸收峰强度随垂直表面电场的作用而降低.理论分析表明,可见光区的主吸收峰源于埋藏在BaO半导体中的Ag超微粒子的表面等离激元共振吸收;近红外光区的次吸收峰则由BaO半导体基质中杂质能级的光吸收引起,杂质能级的产生与超额Ba在BaO晶体中造成的氧缺位有关.在外加垂直表面电场作用下,BaO基质中的杂质发生电离,并导致杂质能级上束缚电子浓度减小,表现为薄膜在与杂质关键词：光吸收金属超微粒子半导体复合薄膜表面等离激元杂质能级 相似文献
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非晶态As2S8半导体薄膜的光致结构变化效应研究 总被引：1，自引：0，他引：1
实验研究了非晶态As2S8半导体薄膜在光照、退火-光照和退火-光照-退火-光照关连作用下的光折变效应及淀积态与退火态两种膜系光致体积变化现象.采用棱镜耦合技术、Raman光谱和X线衍射测试技术,确认了As2S8薄膜经紫外光辐照后薄膜密度增高、折射率增大的现象.实验表明,淀积态As2S8薄膜经紫外光照后,折射率变化的最大增量可达到0.06,而退火态As2S8薄膜经紫外光照射后,其折射率最大变化比前者要小一个数量级,约为0.0057.淀积态和退火态两种膜系紫外光照后,体积缩小,这与As2S3非晶态薄膜的情况不同,体积变化率分别为－3.5%和－2.1%.实验还显示,退火态的As2S8薄膜存在折射率完全可逆现象. 相似文献
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用两块玻璃夹持一层几个μm厚的磁性液体薄膜.将这一磁性液体薄膜垂直放置于由亥姆霍兹线圈建立的均匀磁场中.在迈克尔孙干涉仪上用对比测量法测量在不同外加磁场强度作用下磁性液体薄膜的折射率.实验发现, 磁性液体薄膜的折射率随外加磁场强度的变化而变化.结合实验研究, 提出了外加磁场改变了磁性液体颗粒链的大小, 改变了磁性颗粒链的大小和入射光波波长的比值, 从而改变了磁性液体的折射率的设想.初步建立起了磁性液体薄膜的折射率和外加磁场强度之间的关联式.为磁场测量、光学阀门等新型磁光器件的开发提供了新的技术. 相似文献
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采用Z扫描和泵浦-探测技术研究了GaN薄膜在370 nm时的非线性光学效应和非线性光动力学过程。首先,基于GaN薄膜的透射光谱,结合线性光学理论分析得到了其在370 nm的线性折射率n0、线性吸收系数α0、光学带隙Eg等线性光学性质。采用飞秒激光Z扫描技术,得到了不同光强激发下的Z扫描实验响应结果,结合非线性光学理论提取出GaN薄膜可变的光学非线性吸收效应。在激发光子能量接近GaN带隙情况下,低光强时材料表现为饱和吸收而高光强时为反饱和吸收,这是因为低光强下单光子吸收占主导而高光强下以单光子感应自由载流子吸收为主。闭孔Z扫描测量得到了GaN薄膜的三阶非线性折射系数为n2=-(1.0±0.1)×10-3 cm2·GW-1,它几乎比传统非线性介质的高出一个数量级。为了探究上述非线性过程的动力学弛豫时间以及进一步探究GaN薄膜非线性光动力学过程的深层物理机制,采用了交叉偏振飞秒退相泵浦探测技术观察GaN薄膜的光激发载流子动力学弛豫过程。实验结果表明,在低光强下,饱和吸收效应来源于瞬态单光子吸收,高光强下单光子感应自由载流子吸收为非瞬态光动力学过程,其自由载流子弛豫时间约为17 ps。该工作将为GaN薄膜在紫外非线性纳米器件应用以及GaN薄膜非线性过程的机制分析理解提供新的思路。 相似文献
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The AMPS-ID program is used to investigate electrical and optical properties of the thin film solar cell of a-SiC:H/a-Si1-xGex:H/a-Si:H. The short circuit current density, open circuit voltage, fill factor and efficiency of the solar cell are investigated. The efficiency of the solar cell is 9.19% as thickness of a-Si1-xGex:H is 340 nm with Ge content x=0.1. In addition, we also discuss the factors which affect solar cell efficiency. 相似文献
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A field-effect configuration based on La0.9Sr0.1MnO3/SrTiO3/Si structure is fabricated on Si substrate by laser molecular-beam epitaxy. The resistance modulation by electric field of
the La0.9Sr0.1MnO3/SrTiO3/Si structure is investigated in detail. An evident resistance modulation effect is observed at 80 K. The channel resistance
modulation by field effect reaches 1.4×107% and 2.6×106% when V
DS are −2 and −6.5 V, respectively. The ON/OFF ratio of approximately 4000 is obtained. The present results are worthy of further
investigations for potential applications of resistance modulation by electrostatic field in the heterostructures consisting
of perovskite oxides and Si.
Supported by the National Natural Science Foundation of China (Grant No. 50672120) and the National Basic Research Program
of China (Grant No. 2004CB619004) 相似文献
10.
High resistance modulation by the electric field based on La_(0.9)Sr_(0.1)MnO_3/SrTiO_3/Si structure
YANG Fang HE Meng WEN Juan JIN KuiJuan LU HuiBin & YANG GuoZhen Beijing National Laboratory for Condensed Matter Physics 《中国科学G辑(英文版)》2009,(9)
A field-effect configuration based on La0.9Sr0.1MnO3/SrTiO3/Si structure is fabricated on Si substrate by laser molecular-beam epitaxy. The resistance modulation by electric field of the La0.9Sr0.1MnO3/SrTiO3/Si structure is investigated in detail. An evident resistance modulation effect is observed at 80 K. The channel resistance modulation by field effect reaches 1.4×107% and 2.6×106% when VDS are -2 and -6.5 V, respectively. The ON/OFF ratio of approximately 4000 is obtained. The present results are wort... 相似文献
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基于n型金属氧化物半导体场效应晶体管（nMOSFET）噪声的数涨落模型,采用高阶统计量双相干系数平方和研究了nMOSFET噪声的非高斯性.通过对nMOSFET实际测试噪声的分析,发现nMOSFET器件噪声存在非高斯性;小尺寸器件噪声的非高斯性强于大尺寸器件;在器件的强反型线性区,其非高斯性随着漏压的增加而增加.文中还通过蒙特卡罗模拟和中心极限定理理论对nMOSFET噪声的非高斯性作了深入的探讨.关键词：噪声非高斯性n型金属氧化物半导体场效应晶体管氧化层陷阱 相似文献
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This paper investigates gate current through ultra-thin gate oxide ofnano-scale metal oxide semiconductor field effect transistors(MOSFETs), using two-dimensional (2D) full-band self-consistentensemble Monte Carlo method based on solving quantum Boltzmannequation. Direct tunnelling, Fowler--Nordheim tunnelling andthermionic emission currents have been taken into account for thecalculation of total gate current. The 2D effect on the gate currentis investigated by including the details of the energy distributionfor electron tunnelling through the barrier. In order to investigatethe properties of nano scale MOSFETs, it is necessary to simulategate tunnelling current in 2D including non-equilibrium transport. 相似文献
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MgxZn1xO (x ≤ 0.3) thin films have been prepared on silicon substrates by radio frequency magnetron sputtering at room temperature. The thin films have hexagonal wurtzite single-phase structure and a preferred orientation with the c-axis perpendicular to the substrates. The Mg content in the films is slightly larger than that in the targets. The refractive indices of MgxZn1xO films measured at room temperature by spectroscopic ellipsometry (SE) on the wavelength 632.8 nm are systematically decreased with the increasing of Mg content. Optical band gaps of Mg x Zn 1 x O films are determined by the transmittance spectra. With increasing Mg content, the absorption edges of MgxZn1xO films shift to higher energies and band gaps linearly increase from 3.24 eV at x=0 to 3.90 eV at x=0.30. 相似文献
14.
Kenji Ikeda Tianji Liu Yasutomo Ota Nobukiyo Kobayashi Satoshi Iwamoto 《Advanced Optical Materials》2024,12(2):2301320
Epsilon-near-zero (ENZ) materials exhibit near-zero permittivity and induce various intriguing linear and nonlinear optical phenomena. Magneto-optical (MO) effects, which are notoriously weak in the optical domain, have been predicted to be significantly enhanced in ENZ materials, which can facilitate the realization of compact nonreciprocal devices. However, to date, enhanced MO effects have been predominantly observed in effective ENZ media, which are commonly based on complex combinations of photonic nanostructures. It is difficult for these effective media to achieve isotropic ENZ responses, which severely limits their use in the development of ENZ-MO devices. Here, enhanced MO effects in pristine indium tin oxide (ITO) with ENZ properties at technologically important telecommunication wavelengths are demonstrated. MO transmission (reflection) spectroscopy of ITO films with different ENZ wavelengths reveal Faraday (Kerr) rotation peaks around the respective ENZ (EN-one) wavelengths, demonstrating that these observations are due to the intrinsic properties of the ITO materials. The demonstrated mechanism of the MO effect enhancement is universal and can be applied to various ENZ materials, including those incorporating ferromagnetic materials. Native ENZ materials with enhanced MO responses will greatly expand the opportunities for the development of novel nonreciprocal nanophotonic devices, such as on-chip optical isolators and one-way topological waveguides. 相似文献
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Zn0.95Co0.05 O precipitate-free single crystal thin films were synthesized by a dual beam pulsed laser deposition method.The films form a wurtzite structure whose hexagonal axis is perpendicular or parallel to the plane of the surface depending on the C-plane (0001) or R-plane (11 ˉ 20) sapphire substrate.Based on the results of high-resolution transmission electron microscopy and x-ray diffraction,C-plane films show larger lattice mismatch.The films exhibit magnetic and semiconductor properties at room temperature.The coercivity of the film is about 8000 A/m at room temperature.They are soft magnetic materials with small remanent squareness S for both crystal orientations.There is no evidence to show that the anisotropy is fixed to the hexagonal axis (C-axis) for the wurtzite structure. 相似文献
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通过采用稀土元素镨掺杂铟锡锌氧化物半导体作为薄膜晶体管沟道层,成功实现了基于铝酸的湿法背沟道刻蚀薄膜晶体管的制备.研究了N2O等离子体处理对薄膜晶体管背沟道界面的影响,对其处理功率和时间对器件性能的影响做了具体研究.结果表明,在一定的功率和时间处理下能获得良好的器件性能,所制备的器件具有良好的正向偏压热稳定性和光照条件下负向偏压热稳定性.高分辨透射电镜结果显示,该非晶结构的金属氧化物半导体材料可以有效抵抗铝酸的刻蚀,未发现明显的成分偏析现象.进一步的X射线光电能谱测试表明, N2O等离子体处理能在界面处形成一个富氧、低载流子浓度的界面层.其一方面可以有效抵抗器件在沉积氧化硅钝化层时等离子体对背沟道的损伤;另一方面作为氢的钝化体,抑制了低能级施主态氢的产生,为低成本、高效的薄膜晶体管性能优化方式提供了重要参考. 相似文献