Effect of electron-phonon interaction on surface states in a ternary mixed crystal

A variational theory is proposed to study the surface states of electrons in a semi-infinite ternary mixed crystal, by taking the effect of electron-surface optical (SO) phonon interaction into account. The energy and the wave function of the electronic surface-states are calculated. The numerical results of the energies of the surface states of the polarons and the self-trapping energies are obtained as functions of the composition x and surface potential V₀ for several ternary mixed crystal materials. The results show that the electron-phonon interaction lowers the surface-state levels with the energies from several to scores of meV. It is also found that the self-trapping energy of the surface polaron has a minimum at some middle value of the composition x. It is indicated that the electron-phonon coupling effect can not be neglected. Received 4 January 1999 and Received in final form 7 January 2000     

Ab initio theory of complex electronic ground state of superconductors: II.: Antiadiabatic state—Ground state of superconductors

Based on Q, P-dependent modification of the Born-Oppenheimer approximation (BOA), the ab initio theory of complex electronic ground state of superconductors is presented. As an illustrative example, application of the theory to superconductors of a different character and to the corresponding nonsuperconducting analogues is presented. It is shown that due to electron-phonon (EP) interactions, which drive system from adiabatic into antiadiabatic state, adiabatic translation symmetry is broken and system is stabilized in antiadiabatic state at distorted geometry with respect to adiabatic equilibrium high-symmetry structure. Stabilization effect in the antiadiabatic state is due to strong dependence of the electronic motion on the instantaneous nuclear kinetic energy, i.e. on the effect that is neglected on the adiabatic level within the BOA. At distorted geometry, antiadiabatic ground state is geometrically degenerated with fluxional nuclear configurations in the phonon modes that drive system into this state. It has been shown that until the system remains in antiadiabatic state, nonadiabatic polaron-renormalized phonon interactions are zero in the well-defined k-region of reciprocal lattice. This, along with geometric degeneracy of the antiadiabatic state, enables formation of mobile bipolarons that can move over lattice as supercarriers without dissipation. Moreover, it has been shown that due to EP interactions at transition into antiadiabatic state, k-dependent gap in one-electron spectrum has been opened. Gap opening is associated with shift of the original adiabatic Hartree-Fock orbital energies and with the k-dependent change in density of states of particular band(s) at Fermi level. Corrected one-particle spectrum enables to derive thermodynamic properties in full agreement with corresponding thermodynamic properties of superconductors.Based on the complex ab initio theory, it has been shown that Fröhlich's effective attractive electron-electron interaction term represents correction to electron correlation energy at transition from adiabatic into antiadiabatic state due to EP interactions. It has been shown that increased electron correlation is a consequence of stabilization of the system in superconducting electronic ground state, but not the reason for its formation.     

Ab initio theory of complex electronic ground state of superconductors: I. Nonadiabatic modification of the Born-Oppenheimer approximation

The ARPES of high-T_c cuprates and theoretical results of low-Fermi energy band structure fluctuation for different groups of superconductors indicate that electron coupling to pertinent phonon modes drive system from adiabatic into anti-adiabatic state (ω>E_F). At these circumstances, not only Migdal-Eliashberg approximation is not valid, but basic adiabatic Born-Oppenheimer approximation (BOA) does not hold. At these circumstances, electronic structure has to be studied as explicitly dependent on instantaneous nuclear coordinates Q as well as on instantaneous nuclear momenta P.In the present paper—part I, it has been shown that Q, P-dependent modification of the BOA for ground electronic state can be derived by sequence of canonical transformations of the basis functions. The effect of nuclear coordinates and momenta on electronic structure is presented in the form of corrections to zero-, one- and two-particle terms of clamped nuclear Hamiltonian. In the anti-adiabatic state, correction to electronic ground state energy (zero-particle term correction) is negative and system can be stabilized in the anti-adiabatic state at distorted geometry with respect to adiabatic equilibrium structure and gap in one-particle spectrum of quasi-continuum states at Fermi level can be opened. Stabilization effect is solely the consequence of nuclear dynamics (P) that is crucial in anti-adiabatic state. It has been shown that nuclear dynamics also increases electron correlation until system at nuclear motion remains in a bound state. Corresponding corrections to electronic wave function are also specified.On the other hand, when system remains at vibration motion of nuclei in adiabatic state, the influence of nuclear dynamics (P-dependence) is negligible. In this case, all basic effects are covered through nuclear coordinates (Q-dependence) within the adiabatic BOA and standard results of solid-state (or molecular) physics are recovered.     

The linewidth of surface states of simple metals

The linewidths (inverse lifetimes) Γ_e-e of Be(0001) and Mg(0001) surface electronic states are calculated as the projection of the imaginary part of the self-energy operator of a quasiparticle onto the state. The screened Coulomb interaction is calculated using a model potential, which takes into account the energy gap in the band structure and a surface state located in this gap. The wave functions and energies of electron states are calculated by a self-consistent film pseudopotential method. It is shown that Γ_e-e essentially depends on the position of the surface state in the Brillouin zone. The difference between the calculated values of Γ_e-e and those obtained in a homogeneous electron gas model is shown to be basically due to transitions from surface bands.     

First-principles study on the electronic structure and the ferromagnetic properties of the cyano-bridged bimetallic compound Mn2(H2O)5Mo(CN)7·4H2O (α phase)

First-principles calculations have been performed to study the electronic structure and the ferromagnetic properties of the cyano-bridged bimetallic compound Mn₂(H₂O)₅Mo(CN)₇·4H₂O (α phase).The calculations were based on density-functional theory and the full potential linearized augmented plane wave method (FP-LAPW). The calculated total energies revealed that the compound has a stable ferromagnetic (FM) ground state, which is in agreement with the experiments. The electronic structure of the compound has a half-metallic behavior. The calculated magnetic moment per molecule is about 15.000 μ_B, the magnetic moment are mainly from Mo and Mn atoms with d electronic configuration. It is also found that there exists ferromagnetic interaction between low-spin Mo²⁺ and high-spin Mn³⁺ ions through the Mo-C-N-Mn linear linkages.     

First-principle study on electronic structure and magnetic properties of organic transition metal compound: Trans-tetrachloro-bis-(pyridine)-rhenium

The electronic structure and magnetic properties of the trans-tetrachloro-bis-(pyridine)-rhenium compound with the Re atom as the metallic magnetic center, were studied using the full potential linearized augmented plane wave method (FP-LAPW) within the density functional theory. The calculated total energies revealed that the compound has a stable antiferromagnetic (AFM) ground state, which is in agreement with the experiment. The band structure of the compound has a semiconductor character. The calculated magnetic moment per molecule is 3.00 μ_B, the magnetic moments are mainly from the Re atoms with a 5d³ electronic configuration. The AFM interaction between ferromagnetically coupled Re atom layers passes through the p orbitals of the Cl ligands near Re atoms.     

Theoretical study on the composition dependence of Ga8−nAsn (n=0-8) clusters

Using full-potential linear-muffin-tin-orbital molecular-dynamics (FP-LMTO-MD) method, we have investigated the dependence of GaAs clusters with eight atoms on composition. It is found that the ground state structures for Ga-rich and As-rich clusters are cube structures. As the ratio between gallium atoms and arsenic atoms is close to one, structural distortion become increasingly severe, or even the clusters adopt other geometrical configurations as their ground state structures. The energy gap E_g between the highest-occupied molecular orbital (HOMO) and the lowest-unoccupied molecular orbital (LUMO), and the vertical electron affinity show a certain degree of even/odd alternation with cluster composition. Among nine Ga_8−nAs_n (n=0-8) clusters, only a few of clusters have different energy orders between the ionic and neutral isomers with large binding energy. Some ionic structures would change into other configurations due to severe structural distortion.     

Comparative study of the GaAs(1 0 0) surface cleaned by atomic hydrogen

In attempt to correlate electronic properties and chemical composition of atomic hydrogen cleaned GaAs(1 0 0) surface, high-resolution photoemission yield spectroscopy (PYS) combined with Auger electron spectroscopy (AES) and mass spectrometry has been used. Our room temperature investigation clearly shows that the variations of surface composition and the electronic properties of a space charge layer as a function of atomic hydrogen dose display three successive interaction stages. There exists a contamination etching stage which is observed up to around 250 L of atomic hydrogen dose followed by a transition stage and a degradation stage which is observed beyond 700 L of exposure. In the first stage, a linear shift in the surface Fermi level is observed towards the conduction band by 0.14 eV, in agreement to the observed restoration of the surface stoichiometry and contamination removal. The next stage is characterized by a drop in ionization energy and work function, which quantitatively agrees with the observed Ga-enrichment as well as the tail of the electronic states attributed to the breaking As-dimers. As a result of the strong hydrogenation, the interface Fermi level E_F − E_v has been pinned at the value of 0.75 eV what corresponds to the degradation stage of the GaAs(1 0 0) surface that exhibits metallic density of states associated with Ga_As antisites defects. The results are discussed quantitatively in terms of the surface molecule approach and compared to those obtained by other groups.     

Effect of electron–phonon interaction on surface states in wurtzite nitride semiconductors under pressure

A variational theory is proposed to study the electronic surface states in semi-infinite wurtzite nitride semiconductors under the hydrostatic pressure. The electronic surface state energy level is calculated, by taking the effects of the electron–Surface–Optical–phonon interaction, structural anisotropy and the hydrostatic pressure into account. The numerical computation has been performed for the electronic surface state energy levels, coupling constants and the average penetrating depths of the electronic surface state wave functions under the hydrostatic pressure for wurtzite GaN, AlN and InN, respectively. The results show that electron–Surface–Optical–phonon interaction lowers the electronic surface state energy levels. It is also found that the electronic surface state energy levels decrease with the hydrostatic pressure in wurtzite GaN and AlN. But for wurtzite InN, the case is contrary. It is shown that the hydrostatic pressure raised the influence of electron–phonon interaction on the electronic surface states obviously. The effect of electron–Surface–Optical–phonon interaction under the hydrostatic pressure on the electronic surface states cannot be neglected, in specially, for materials with strong electron–phonon coupling and wide band gap.     

The electronic structure and magnetism of GdSi2 by first-principles study

We have investigated electronic and magnetic properties of hexagonal, tetragonal, and orthorhombic GdSi₂, using the full-potential linearized augmented plane-wave method based on general gradient approximation for exchange-correlation potential. Antiferromagnetic (AFM) states of the GdSi₂ are found from total energy calculations to be energetically more stable, compared to ferromagnetic (FM) states in all of the considered present crystal structures. It is in good agreement with an experimental result. The calculated magnetic moments of valence electrons of the Gd atoms are 0.16, 0.14, and 0.14 μ_B for hexagonal, tetragonal, and orthorhombic crystal structures in AFM states, respectively, and the Si atoms are coupled antiferromagnetically to the Gd atoms irrespective of crystal structure even though their magnitudes are negligible.     

Theoretical investigation on structural, magnetic and electronic properties of ferromagnetic GdN under pressure

The tight-binding linear muffin tin orbital (TB-LMTO) method within the local density approximation is used to calculate structural, electronic and magnetic properties of GdN under pressure. Both nonmagnetic (NM) and magnetic calculations are performed. The structural and magnetic stabilities are determined from the total energy calculations. The magnetic to ferromagnetic (FM) transition is not calculated. Magnetically, GdN is stable in the FM state, while its ambient structure is found to be stable in the NaCl-type (B₁) structure. We predict NaCl-type to CsCl-type structure phase transition in GdN at a pressure of 30.4 GPa. In a complete spin of FM GdN the electronic band picture of one spin shows metallic, while the other spin shows its semiconducting behavior, resulting in half-metallic behavior at both ambient and high pressures. We have, therefore, calculated electronic band structures, equilibrium lattice constants, cohesive energies, bulk moduli and magnetic moments for GdN in the B₁ and B₂ phases. The magnetic moment, equilibrium lattice parameter and bulk modulus is calculated to be 6.99 μ_B, 4.935 Å and 192.13 GPa, respectively, which are in good agreement with the experimental results.     

Site-specific valence-band X-ray photoelectron spectra of a SrTiO3 single-crystal by X-ray standing wave technique

Site-specific valence-band X-ray photoelectron spectra of SrTiO₃ (111) were successfully obtained by using X-ray standing wave technique. Contributions of the Ti and SrO₃ derived states to the valence-band spectra were clearly separated. The spectra provided not only site-specific but also bulk-sensitive information on the SrTiO₃ crystal because of the use of a high-energy synchrotron X-ray source (hν=4750 eV) for photoelectron excitation with the large escape depth. The electronic structures calculated by the DV-Xα method using a (Sr₈Ti₂₇O₁₀₈)⁹²⁻ cluster model well reproduced the observed structures in the valence-band spectra. The partial density of states of both Ti and Sr ions in SrTiO₃ were mainly distributed over the bottom of the valence-band to produce the covalent bonding with O ions.     

Effect of disorder and isotope on the properties of a two orbital double exchange system

A two-site single electron double exchange model incorporating orbital degeneracy, superexchange and electron-phonon (e-ph) interaction is studied using exact diagonalization method. The core spins are treated quantum mechanically. We study the ground state phase diagram as well as the magnetic susceptibility and the kinetic energy of the system as a function of temperature. Effect of difference in site energies, which mimics the role of site-diagonal disorder, is investigated. The susceptibility shows a peak at a characteristic temperature which we have referred to as T₀. The variation of T₀ with e-ph coupling and that of the isotope-shift exponent (α) with T₀ are obtained. We also investigate the field-induced change in the kinetic energy, which is related to the colossal magnetoresistance (CMR) of the system, and find that the disorder enhances the CMR even for the two-site system.     

Effect of electron-phonon interaction on surface states in zinc-blende GaN,AlN, and InN under pressure

A variational approach is used to study the surface states of electrons in a semi-infinite polar semiconductor under hydrostatic pressure. The effective Hamiltonian and the surface-state levels are derived including the effects of electron-optical phonon interaction and pressure. The numerical computation has been performed for the surface-state energies versus pressure for zinc-blende GaN, AlN, and InN. The results show that the effect of electron-optical phonon interaction lowers the surface-state energy. It is also found that the effect of electron-surface optical phonon interaction is much bigger than the effect of electron-half space longitudinal optical phonon interaction for surface-state levels. It indicates that the surface-state energies and the influence of electron-phonon interaction increase with pressure obviously.Received: 12 June 2003, Published online: 22 September 2003PACS: 63.20.Kr Phonon electron and phonon-phonon interactions - 71.38.-k Polarons and electron-phonon interactions - 73.20.At Surface states, band structure, electron density of states     

First-principles study of photoconductivity in BaTiO3 with oxygen vacancies

The photoconductivity of BaTiO_2.5 with oxygen vacancy has been studied by the linear muffin-tin orbital method in the atomic sphere approximation (LMTO-ASA). The ground-state structure of BaTiO_2.5 is obtained by minimization of the total energy. The partial densities of states show that the occupied states at the bottom of the conduction band have primarily Ti d orbital character. The photoconductivity shows that two novel features, in the low energy side, can be attributed to the intraband transition of free electronic carriers in the vicinity of the Fermi level and the interband transition of the Ti 3d(yz) related band states, to the Ti 3d(xy,xz) related band states, respectively. In addition, it is also found that the anisotropy of photoconductivity is enhanced because of the introduction of oxygen vacancy. The system can show the conductive behavior of electronic carriers, which is qualitatively in agreement with a recent experimental finding.     

Electronic structures of mixed ionic-electronic conductors SrCoOx

Electronic structures of SrCoO_x with x=3, 2.875 and 2.75 were calculated by DFT technique in SLDA approximation. Two kinds of oxygen vacancy ordering with energies of 0.22 and 0.01 eV lower in comparison with random vacancy distribution were revealed. The transition between these ordered vacancy systems with the activation energy 0.34 eV can be a step in the ionic conductivity mechanism. The calculated ion charges, magnetic moments and electron density of states were used to analyze chemical bonding in the crystals. All calculated compounds have metal electronic conductivity.     

The effect of cation doping on spinel LiMn2O4: a first-principles investigation

The effect of the cation doping on the electronic structure of spinel LiM_yMn_2−yO₄ (M=Cr, Mn, Fe, Co and Ni) has been calculated by first-principles. Our calculation shows that new M-3d bands emerge in the density of states compared with that in LiMn₂O₄. Simultaneously, the new O-2p bands appear accordingly in almost the same energy range around the Fermi energy owing to the M-3d/O-2p interaction. It is found that the appearance of new O-2p bands in the lower energy position results in a higher intercalation voltage. Consequently, the origin of higher intercalation voltage in LiM_yMn_2−yO₄ can be ascribed to the lower O-2p level introduced by the doping cation M.     

Theoretical treatment of excited electronic states of adsorbates on metals: Electron attachment to CO2 adsorbed on Pt(1 1 1)

Photochemistry involving adsorbates on metals often proceeds by photoexcitation of the metal followed by transient attachment of photoemitted electrons to the adsorbate. First principles theoretical methods suitable for describing electronic states embedded in a near continuum of metal to metal excitations are described and an application to electron attachment to CO₂ adsorbed on Pt(1 1 1) is reported. Wavefunctions are constructed by ab initio configuration interaction methods which allow a rigorous resolution of states and differentiation between competing pathways of molecular desorption and dissociation. An embedding theory is used to achieve high accuracy in the adsorbate-surface region. The energy required to form the electron attached state is 5.2 eV for excitation to bent CO₂ and 6.8 eV for excitation to linear CO₂, hence both energies are near the work function of the metal (5.7 eV). The process also involves localization of the metal hole and attraction of the charged adsorbate to the metal. Optimum geometries are calculated and pathways that results in desorption, dissociation by bond rupture directly in the excited electronic state, or dissociation after return to the ground state potential energy surface via vibrational processes are explored.     

Ab initio calculation of neutral and singly charged Mgn (n?11) clusters

Under generalized gradient approximation (GGA), geometrical structure, size dependence of stability and electronic properties of neutral Mg_n, singly charged cationic Mg_n⁺ and singly charged anionic Mg_n⁻ clusters consisting of up to 11 atoms have been studied systematically by ab initio method within the norm-conserving pseudopotentials. In addition to the electronic shell effects, the “closed” geometrical structure can also enhance the stability of the clusters. The enhanced stability for the cationic cluster resulted from the removal of an antibonding electron is larger than that for the anionic cluster by promoting an extra electron to occupy a bonding orbital. The density of states (DOS) shows the increase in interaction between valence and unoccupied states leads to an increase in s-p hybridization.     

Electronic and magnetic behavior of ultrathin Ti nanowires

We report theoretical results on the magnetic behavior of free standing nanowires of Ti. Four different structures of Ti nanowires-linear, ladder, dimerized, and zigzag-with nonmagnetic, ferromagnetic, and anti-ferromagnetic configurations were considered. Exploration of magnetism in these atomic chains leads to ferromagnetic behavior for all the structures: zigzag structure shows almost degenerate ferromagnetic and anti-ferromagnetic states though. The zigzag structure of Ti nanowires is favored of all for low values of nearest neighbor distances, whereas the dimerized structure is favored at larger atomic separations. Our work helps to resolve the controversy in the predicted ground state magnetic nature of zigzag chains of Ti as reported in recent previous works. The maximum value of magnetic moment (0.93 μ_B/atom) occurs in the ladder chains while the zigzag chains show the minimum value (0.17 μ_B/atom). Interestingly, all the structures in the magnetic configuration show metastable state except the dimerized structure. Ferromagnetic dimerized nanowires seem to be a potential candidate for use in spintronics. The projected density of states shows that d_x²_−y² and d_xy bands play a leading role in magnetism of linear and ladder structures, whereas there is no outstanding contribution from a particular d-orbital for zigzag and dimerized nanowires. The charge density plots suggest that linear and zigzag structures have metallic bonding whereas covalent bonding is predominant in the dimerized and ladder structures. The estimated diameters for the favored ferromagnetic configuration of these ultrathin nanowires lie in the range 1.9-3.4 Å and indicate the instability of the ladder structure, as also projected by the relative cohesive energy and relative break force values.