不规则H形量子势垒增强AlGaN基深紫外发光二极管性能

针对AlGaN基多量子阱中有效的平衡载流子注入问题,研究了有源区势垒层中Al组分调制形成的非规则H形量子势垒对AlGaN基深紫外发光二极管(LED)器件性能的影响及载流子的输运行为。研究发现,与多量子阱中常用的单Al组分势垒相比,加入Al组分较高的双尖峰势垒可以有效地提高内量子效率和光输出功率。进一步研究表明,电子在有源区因凸起的尖峰势垒而得到了有效的阻挡,减少了电子的泄露,而空穴获得更多的动能从而穿过较高的势垒进入有源区。因此,采用非对称H形量子势垒的深紫外LED器件中载流子输运实现了较好的平衡,量子阱中的载流子复合速率远高于普通的深紫外发光二极管。     

铁磁/半导体/铁磁结构的双量子环自旋输运的特性

研究了与铁磁/半导体/铁磁结构相关的双量子环自旋输运的规律,研究结果表明：总磁通为零条件下,铁磁电极磁化方向反平行时,双量子环与单量子环相比提高了自旋电子透射概率的平均值.铁磁电极磁化方向平行时,双量子环对提高自旋向下电子平均透射概率的效果更明显;双量子环受到Rashba自旋轨道耦合作用影响时,自旋电子的平均透射概率明显高于单量子环,即使再加上外加磁场的影响,透射概率较高这一特征依然存在;双量子环所含的δ势垒具有阻碍自旋电子输运的作用,随δ势垒强度Z的增大透射概率 关键词： 双量子环 Rashba自旋轨道耦合 透射概率 δ势垒')" href="#">δ势垒     

电子双势垒量子隧穿的散射矩阵方法及其数值模拟

采用散射矩阵的方法研究了电子在由两个方势垒组成的双势垒结构中的隧穿特性.将电子在双势垒中的隧穿过程分为相干输运和非相干输运两部分来研究,相干输运导致了隧穿透射系数随中间层厚度变化产生量子振荡,而非相干输运导致了振荡振幅的衰减.双势垒总的透射系数与势垒高度、入射和出射波矢的匹配性有关,数值计算的结果证实了相关结论.     

Ⅰ类超晶格势阱中能级分布及电子跃迁规律研究

在研究大量实验曲线的基础上,指出势阱所有能级均有一定的宽度,电子或空穴在各能级中出现的概率符合正态分布,从理论上分析了I类超晶格和双势垒单势阱的发光光谱与吸收光谱.解释了GaAs/Ga1－xAlxAs多量子阱和超晶格吸收光谱吸收边及量子阱变窄时各吸收峰的“蓝移现象”及GaAs/Ga1－xAlxAs双势垒单量子阱样品的电流—电压特性曲线及电导—电压特性曲线的特征和出现的“负阻效应”.     

Ⅰ类超晶格势阱中能级分布及电子跃迁规律研究

在研究大量实验曲线的基础上,指出势阱所有能级均有一定的宽度,电子或空穴在各能级中出现的概率符合正态分布,从理论上分析了I类超晶格和双势垒单势阱的发光光谱与吸收光谱·解释了GaAs/Ga1-xAlxAs多量子阱和超晶格吸收光谱吸收边及量子阱变窄时各吸收峰的“蓝移现象”及GaAs/Ga1-xAlxAs双势垒单量子阱样品的电流—电压特性曲线及电导—电压特性曲线的特征和出现的“负阻效应”·     

非对称双量子阱中载流子耦合的温度依赖性

非对称双量子阱中载流子动力学过程的温度依赖性研究,对于实现室温下高效的量子阱光电器件有着非常重要的意义。随着温度的升高,量子阱中的载流子被热激发到势垒层中后,部分载流子会被量子阱再俘获,即在不同的量子阱之间发生了载流子的耦合。利用耦合多量子阱载流子动力学模型,模拟了非对称双量子阱中载流子耦合的温度依赖性。研究表明,在不同温度下,各量子阱的光致荧光强度比强烈地依赖于量子阱的激活能差。光致荧光强度比的最大值与激活能差成指数关系,而其所对应的温度与激活能差成线性关系。     

含多层InAs量子点的双肖特基势垒二极管输运特性研究

研究了含多层InAs量子点结构的双肖特基势垒的电流输运特性,观察到了量子点的电子存储效应及其对电流的调制现象、电流多稳态现象和零点电压漂移现象.因为多量子点之间存在耦合作用,造成器件中的很多亚稳态.通过器件的输运特性显示出比含单层量子点器件更复杂的结果.随着外加电压的变化,器件经历很多弛豫过程.这些弛豫过程在电流电压曲线中造成很多电流跳跃结构和各种噪声结构 关键词： 多量子点 迟滞现象 单电子过程     

非对称耦合量子阱中亚毫米波辐射及其带间激子复合发光特性的理论研究

基于V形三能级模型运用密度矩阵方程研究了非对称耦合量子阱退局域化现象，并具体分析了导带中电子作阱间振荡所产生的亚毫米辐射和激子复合所产生的近红外发射物理过程.理论结果表明：阱间电子波包振荡等效为一经典阻尼振子，其寿命由载流子与纵向光学声子散射时间和电子穿过势垒的渡越时间决定，所产生的亚毫米波辐射强度衰减仅与阱间阻尼系数有关，其线性服从洛仑兹分布.由带间激子复合所产生的近红外辐射频率随电子阱间振荡频率增加而减小，表现为量子限域斯塔克红移，即非对称量子阱在近红外发光区特性随反向偏压而变.这一结果预示着耦合量子 关键词： 非对称耦合量子阱 电子波包振荡 亚毫米波辐射 近红外发射     

非对称量子点中电子的激发能量和跃迁谱线频率

研究了非对称量子点中与声子强耦合的电子的性质.采用线性组合算符和幺正变换方法研究非对称量子点中与声子强耦合的电子的第一内部激发态能量、激发能量和第一内部激发态到基态的跃迁谱线频率随量子点的横向和纵向有效受限长度,电子-声子耦合强度的变化关系。数值计算结果表明：非对称量子点中与声子强耦合的电子的第一内部激发态能量、激发能量和第一内部激发态到基态的跃迁谱线频率随量子点的横向和纵向有效受限长度的减小而迅速增大,表现出奇特的量子尺寸效应。非对称量子点中与声子强耦合的电子的第一内部激发态能量随电子-声子耦合强度的增加而减小。非对称量子点中与声子强耦合的电子的激发能量和第一内部激发态到基态的跃迁谱线频率随电子-声子耦合强度的增加而增大。     

耦合量子点中的纠缠测量

运用Gurvitz提出的求解薛定谔方程的方法并结合数值计算,分析了两个自旋相反的电子在耦合双量子点中的振荡和纠缠情况,以及如何利用量子点接触读出纠缠信息.结果显示两电子通过库伦相互作用形成量子纠缠态.强库伦作用下,它们黏在一起运动,类似于单电子在量子比特中的振荡.这种情况下,把量子点接触探测器靠近耦合双量子点,可以通过探测器的电流变化率读取电子的纠缠信息.     

Resonant enhancement of tunneling magnetoresistance in double-barrier magnetic heterostructures

We show that spin-dependent resonant tunneling can dramatically enhance tunneling magnetoresistance. We consider double-barrier structures comprising a semiconductor quantum well between two insulating barriers and two ferromagnetic electrodes. By tuning the width of the quantum well, the lowest resonant level can be moved into the energy interval where the density of states for minority spins is zero. This leads to a great enhancement of the magnetoresistance, which exhibits a strong maximum as a function of the quantum well width. We demonstrate that magnetoresistance exceeding 800% is achievable in GaMnAs/AlAs/GaAs/AlAs/GaMnAs double-barrier structures.     

Wavelength and polarization selective multi-band tunnelling quantum dot detectors

The reduction of the dark current without reducing the photocurrent is a considerable challenge in developing far-infrared (FIR)/terahertz detectors. Since quantum dot (QD) based detectors inherently show low dark current, a QD-based structure is an appropriate choice for terahertz detectors. The work reported here discusses multi-band tunnelling quantum dot infrared photo detector (T-QDIP) structures designed for high temperature operation covering the range from mid-to far-infrared. These structures grown by molecular beam epitaxy consist of a QD (InGaAs or InAlAs) placed in a well (GaAs/AlGaAs) with a double-barrier system (AlGaAs/InGaAs/AlGaAs) adjacent to it. The photocurrent, which can be selectively collected by resonant tunnelling, is generated by a transition of carriers from the ground state in the QD to a state in the well coupled with a state in the double-barrier system. The double-barrier system blocks the majority of carriers contributing to the dark current. Several important properties of T-QDIP detectors such as the multi-colour (multi-band) nature of the photoresponse, the selectivity of the operating wavelength by the applied bias, and the polarization sensitivity of the response peaks, are also discussed.     

Influence of quantum well states on transport properties of double barrier junctions

A strong asymmetric behavior in the I–V characteristics and the tunnel magnetoresistance in asymmetric magnetic double-barrier junctions is predicted. This effect relates to formation of quantum well states in the middle metallic layer. The influence of the random fluctuations of the barrier and the middle metallic layer thickness on the statistics of resonant levels is investigated.     

Tunneling current spectroscopy of a nanostructure junction involving multiple energy levels

A multilevel Anderson model is employed to simulate the system of a nanostructure tunnel junction with any number of one-particle energy levels. The tunneling current, including both shell-tunneling and shell-filling cases, is theoretically investigated via the nonequilibrium Green's function method. We obtain a closed form for the spectral function, which is used to analyze the complicated tunneling current spectra of a quantum dot or molecule embedded in a double-barrier junction. We also show that negative differential conductance can be observed in a quantum dot tunnel junction when the Coulomb interactions with neighboring quantum dots are taken into account.     

Resonance condition for asymmetrical triple-barrier structures

The resonance condition for triple-barrier structures with arbitrary potential is studied systematically. The quasisymmetrical triple-barrier (QST) resonance mode and the quasi-asymmetrical double-barrier (QAD) resonance mode may both exist in asymmetric triple-barrier structures. The QST consists of two submodes: a normal mode (doublet) and a degenerate mode (singlet). The critical condition for distinguishing the two modes is examined. It is confirmed that there are both unity resonant transmission and below-unit resonant transmission in the asymmetrical triple-barrier structure. Furthermore, the wavefunctions of an electron at resonance level are calculated and the confining phenomenon is studied.     

Tunneling in double-barrier ZnSe/ZnTe structures — time-dependent analysis

Wave-packet time-dependent quantum mechanics is used to calculate the tunneling probability through a double-barrier ZnSe/ZnTe structure. The time-dependent transmission characteristics are obtained for several structures, and detailed electron dynamics is presented. The resonant peaks due to the presence of the discrete energy levels in the quantum well as well as in the barrier region are observed.     

Electron spin filtering in all-semiconductor tunneling structures

In this work we briefly review the present day perspectives for exploiting conventional non-magnetic semiconductor nano-technology to design high speed spin-filter devices. In recent theoretical investigations a high spin polarization has been predicted for the ballistic tunneling current in semiconductor single- and double-barrier asymmetric tunnel structures of III–V semiconductors with strong Rashba spin–orbit coupling. We show in this paper that the polarization in the tunneling can probability be sufficiently increased for producing realistic single-barrier structures by including of the Dresselhaus term into consideration.     

The quasibound state model for self-consistent characteristics of semiconductor intersubband devices

The quasibound state model (QBSM) for determining the self-consistent conduction band profile and space charge density of semiconductor intersubband devices is presented. This new method is based on the quasibound (QB) state resonances of quantum structures. For heterostructures, the traditional self-consistent energy continuum model (ECM) calculates space charge by integration over the entire energy continuum, weighted by Fermi–Dirac statistics. In the present approach, the continuum of energy states of the heterostructure is accurately represented by a small number of QB states, and the space charge calculations are performed only at these eigen-energies. This approach significantly reduces the computational burden associated with all self-consistent algorithms. Theoretical formulation of QBSM is compared with the traditional ECM approach. The bound (B) and QB eigenenergies of the structure are obtained by solving the single-band effective-mass Schrödinger equation using the argument principle method. The performance and the accuracy of the QBSM are evaluated for a double-barrier resonant structure and an asymmetric Fabry–Perot electron-wave interference filter. The self-consistent electron density and potential profiles calculated by the present method are shown to be in excellent agreement with the results obtained from the traditional ECM model. In addition to requiring less computational time, the present method is easily implemented and may be applied equally well to biased/unbiased, symmetric/asymmetric heterostructures.     

A theoretical study of resonant tunneling characteristics in triangular double-barrier diodes

Resonant tunneling characteristics of triangular double-barrier diodes have been investigated systematically in this Letter, using Airy function approach to solve time-independent Schrödinger function in triangular double-barrier structures. Originally, the exact analytic expressions of quasi-bound levels and quasi-level lifetime in symmetrical triangular double-barrier structures have been derived within the effective-mass approximation as a function of structure parameters including well width, slope width and barrier height. Based on our derived analytic expressions, numerical results show that quasi-bound levels and quasi-level lifetime vary nearly linearly with the structure parameters except that the second quasi-level lifetime changes parabolically with slope width. Furthermore, according to our improved transmission coefficient of triangular double-barrier structures under external electric field, the current densities of triangular double-barrier diodes with different slope width at 0 K have been calculated numerically. The results show that the N-shaped negative differential resistance behaviors have been observed in current–voltage characteristics and current–voltage characteristics depend on the slope width.     

Level width of a quasibound state in a double-barrier parabolic-well resonant tunneling structure

Taking exact Airy functions and Hermitian functions as envelope functions, we investigate in detail the level width of a quasibound state for electrons coherent resonant tunneling through symmetric and asymmetric double-barrier parabolic-well resonant tunneling structures (DBRT) with the transfer-matrix formalism. It is found that for the symmetric structure and the asymmetric structure with left barrier thicker than the right one, both the level width and the peak value vary monotonously with increasing applied bias, but for the asymmetric DBRT structure with left barrier thinner than the right one, they change nonmonotonously. The nonmonotonous variations of the level width and the peak value reflect the transition of tunneling type (i.e. first from incompletely resonant tunneling to completely resonant tunneling, and then from completely resonant tunneling back to incompletely resonant tunneling). The effects of well width, barrier thickness and barrier height on the level width and the peak value are also inspected.