首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到19条相似文献,搜索用时 93 毫秒
1.
何艳生  符师桦  张青川 《物理学报》2014,63(22):228102-228102
动态应变时效,即位错和溶质原子的动态交互作用,对合金材料的力学性质产生重要影响. 本文基于蒙特卡罗方法,建立了“多位错-溶质原子” 二维动力学模型,分别模拟了单位错-恒定应力率、多位错-无应力、多位错-恒定应力和多位错-恒定应力率四种条件下位错和溶质原子的演化过程. 单位错-恒定应力率情况下,低应力率时位错被溶质原子钉扎而无法脱钉,高应力率时位错未被钉扎而一直运动,只有在适当应力率范围内,位错才呈现出反复的钉扎和脱钉;多位错-无应力时,溶质原子向正/负位错的下/上方偏聚;多位错-恒定应力时,位错运动受溶质原子钉扎的影响随应力增大而减小;多位错-恒定应力率时,集群化的钉扎和脱钉过程导致了位错总位移呈现阶梯状的演化. 模拟结果表明:“位错-溶质原子”尺度上呈现了动态应变时效微观过程,与其理论描述相一致. 关键词: 动态应变时效 动力学模型 位错运动  相似文献   

2.
Si材料中60°位错的分子动力学研究   总被引:4,自引:4,他引:0       下载免费PDF全文
本文使用Stillinger-Weber势函数和周期性边界条件,通过在原子尺度上的分子动力学计算研究了60°位错的位错心能量和运动情况.首先提出了相对简单的建立位错偶极子的新方法.在此基础上,借助于最近得到的对周期性映像作用的评估理论,由不同大小的3维计算模型得到的位错心能量的平均值为0.43 eV,这一结果不同于先前文献中的报导.另一方面,为研究位错运动在较大温度和压力范围下的表现,提出了相应解决方法来避免位错心在高温模拟环境时测量的不精确性.模拟结果显示位错速度相对于温度的变化曲线表现为波动形式.而且,位错的速度随模拟温度的升高而降低,这一结果与声子拖拽模型相吻合.  相似文献   

3.
位错与溶质原子间动态相互作用的数值模拟研究   总被引:4,自引:0,他引:4       下载免费PDF全文
通过Cottrell-Bilby型溶质动力学模型,对位错线周围的溶质原子浓度随应变率的变化进行了研究,并得到了三种不同的位错-溶质相互作用方式:在低应变率时,位错被溶质原子气团充分钉扎,它上面的溶质浓度近似达到饱和;在高应变率时,脱钉作用占主导地位,位错运动几乎不受深质影响;而在中间应变率时,位错反复经历着钉扎和脱钉过程,动态应变时效发生.此外,通过对模型方程的推导,还自然地得到了平衡状态下率相关流动应力与应变率之间的N形关系曲线. 关键词: 位错 溶质原子 动态应变时效 数值模拟  相似文献   

4.
第伍旻杰  胡晓棉 《物理学报》2015,64(17):170201-170201
本文利用分子动力学模拟方法研究了含纳米孔洞金属铝在[110]晶向高应变率单轴压缩下弹塑性变形的微观过程. 对比单孔洞和完整单晶的模型, 讨论了多孔金属的应力应变关系及其位错发展规律. 研究结果表明, 对于多孔模型的位错积累过程, 位错密度随应变的增加可大致分为两个线性阶段. 由同一个孔洞生成的位错在相互靠近过程中, 其滑移速度越来越小; 随着位错继续滑移, 源自不同孔洞的位错之间开始交叉相互作用导致应变硬化. 达到流变峰应力之后又由于位错密度增殖速率升高发生软化. 当应变增加到11.8%时, 所有孔洞几乎完全坍缩, 并观察到在此过程中有棱位错生成.  相似文献   

5.
卢果  方步青  张广财 《计算物理》2010,27(2):195-202
基于连续介质位错理论提出一种新的位错原子分布构造方式,理论上可以构造出任意形状和任意Burgers矢量的位错结构.利用该方法,选用FCC单晶铜为模拟介质,构造Burgers矢量为b=[110]/2的刃型全位错和Burgers矢量为b=[112]/6圆环形不完全位错环,并使用分子动力学方法模拟全位错的扩展分解过程和不全位错环在自应力作用下的收缩过程,模拟结果与理论分析一致.该方法的优点在于可以方便地构造出其他传统方法难以构造的位错闭合结构——位错环,从而使位错环的细致研究成为可能.  相似文献   

6.
本文通过分子动力学方法(MD),采用嵌入原子势法(EAM),沿[111]方向插入一层(0-11)半原子面形成位错,然后在模型中插入空洞,模拟了BCC 铁中刃型位错与空洞相互作用,研究了空洞对位错运动的影响机理。模拟结果表明,当温度设定为10K时,位错运动速度快,但空洞直径的大小对位错运动速度的影响不太明显,当高温设定为100K时,由于位错线密度增大并随着空洞直径的增加位错运动速度减小,临界剪切应力也随着减小。最后将模拟计算结果与Osetsky的研究数据及连续体理论模型进行了对比分析。  相似文献   

7.
本文通过分子动力学方法(MD),采用嵌入原子势法(EAM),沿[111]方向插入一层(0-11)半原子面形成位错,然后在模型中插入空洞,模拟了BCC 铁中刃型位错与空洞相互作用,研究了空洞对位错运动的影响机理。模拟结果表明,当温度设定为10K时,位错运动速度快,但空洞直径的大小对位错运动速度的影响不太明显,当高温设定为100K时,由于位错线密度增大并随着空洞直径的增加位错运动速度减小,临界剪切应力也随着减小。最后将模拟计算结果与Osetsky的研究数据及连续体理论模型进行了对比分析。  相似文献   

8.
使用分子动力学方法,采用嵌入原子势(EAM),在0K下模拟了面心立方金属Cu单晶的刃型位错,研究了刃型位错产生对晶体体积的影响.模拟结果表明,无论使用推入还是抽出原子层的方法获得刃型位错,平衡状态时刃型位错的存在使晶体体积增大.  相似文献   

9.
使用分子动力学方法,采用嵌入原子势(EAM),在0K下模拟了面心立方金属Cu单晶的刃型位错,研究了刃型位错产生对晶体体积的影响.模拟结果表明,无论使用推入还是抽出原子层的方法获得刃型位错,平衡状态时刃型位错的存在使晶体体积增大.  相似文献   

10.
樊倩  徐建刚  宋海洋  张云光 《物理学报》2015,64(1):16201-016201
采用分子动力学模拟方法, 研究了层厚度和应变率对铜-金多层复合纳米线在均匀拉伸载荷下力学性能的影响, 并分析了铜-金位错成核机理. 研究结果表明, 随着铜-金层厚度的增加, 复合材料的屈服强度也随之增大; 高应变率时复合材料的力学性能比低应变率时要强, 低应变率的塑性形变主要是位错运动和孪晶形变, 而高应变率主要以单原子运动为主, 表现出了非晶化. 该研究对制备高性能的多层复合材料提供了一定的理论依据.  相似文献   

11.
ABSTRACT

There are two types of pop-in mode that have been widely observed in nanoindentation experiments: the single pop-in, and the successive pop-in modes. Here we employ the molecular dynamics (MD) modelling to simulate nanoindentation for three face-centred cubic (FCC) metals, including Al, Cu and Ni, and two body-centred cubic (BCC) metals, such as Fe and Ta. We aim to examine the deformation mechanisms underlying these pop-in modes. Our simulation results indicate that the dislocation structures formed in single crystals during nanoindentation are mainly composed of half prismatic dislocation loops. These half prismatic dislocation loops in FCC metals are primarily constituted of extended dislocations. Lomer–Cottrell locks that result from the interactions between these extended dislocations can resist the slipping of half dislocation loops. These locks can build up the elastic energy that is needed to activate the nucleation of new half dislocation loops. A repetition of this sequence results in successive pop-in events in Al and other FCC metals. Conversely, the half prismatic dislocation loops that form in BCC metals after first pop-in are prone to slip into the bulk, which sustains plastic indentation process after first pop-in and prevents subsequent pop-ins. We thus conclude that pop-in modes are correlated with lattice structures during nanoindentation, regardless of their crystal orientations.  相似文献   

12.
13.
Abstract

The effect of initial dislocation density on subsequent dislocation evolution and strain hardening in FCC aluminium alloy under laser shock peening (LSP) was investigated by using three-dimension discrete dislocation dynamics (DD) simulation. Initial dislocations were randomly generated and distributed on slip planes for three different dislocation densities of 4.21 × 1012, 8.12 × 1012 and 1.26 × 1013 m?2. Besides, variable densities of prismatic loops were introduced into the DD cells as nanoprecipitates to study the dislocation pinning effect. The flow stresses as a function of strain rate obtained by DD simulation are compared with relevant experimental data. The results show a significant dislocation density accumulation in the form of dislocation band-like structures under LSP. The overall yield strength in FCC aluminium alloy decreases with increasing initial dislocation density and forest dislocation strengthening becomes negligible under laser induced ultra-high strain rate deformation. In addition, yield strength is enhanced by increasing the nanoprecipitate density due to dislocation pinning effect.  相似文献   

14.
K.W. Siu 《哲学杂志》2013,93(34):4367-4387
The acoustoplastic effect in metals is routinely utilised in industrial processes involving forming, machining and joining, but the underlying mechanism is still not well understood. There have been earlier suggestions that dislocation mobility is enhanced intrinsically by the applied ultrasound excitation, but in subsequent deliberations it is routinely assumed that the ultrasound merely adds extra stresses to the material without altering its dislocation density or intrinsic resistance to deformation. In this study, a dislocation dynamics simulation was carried out to investigate the interactions of dislocations under the combined influence of quasi-static and oscillatory stresses. Under such combined stress states, dislocation annihilation is found to be enhanced leading to larger strains at the same load history. The simulated strain evolution under different stress schemes also closely resembles certain previously obtained experimental observations. The discovery here goes far beyond the simple picture that the ultrasound effect is merely an added-stress one, since here, the intrinsic strain-hardening potency of the material is found to be reduced by the ultrasound, through its effect on enhancing dislocation annihilation.  相似文献   

15.
The formation of dislocation cells has a significant impact on the strain hardening behaviour of metals. Dislocation cells can form in metals with a characteristic size defined by three-dimensional tangles of dislocations that serve as “walls” and less dense internal regions. It has been proposed that inhibiting the formation of dislocation cells could improve the strain hardening behaviour of metals such as Al. Here we employ in situ scanning electron microscope compression testing of pure Al single crystal pillars with physical dimensions larger, close to and smaller than the reported cell size in Al, respectively, to investigate the possible size effect on the formation of dislocation cell and the consequent change of mechanical properties. We observed that the formation of dislocation cells is inhibited as the pillar size decreases to a critical value and simultaneously both the strength and the strain hardening behaviour become strongly enhanced. This phenomenon is discussed in terms of the effect of dimensional restriction on the formation of dislocation cells. The reported mechanism could be applied in polycrystalline Al where the tunable physical dimension could be grain size instead of sample size, providing insight into Al alloy design.  相似文献   

16.
We report a method to incorporate dislocation climb controlled by bulk diffusion in a three-dimensional discrete dislocation dynamics (DDD) simulation for fcc metals. In this model we couple the vacancy diffusion theory to the DDD in order to obtain the climb rate of the dislocation segments. The capability of the model to reproduce the motion of climbing dislocations is examined by calculating several test-cases of pure climb-related phenomena and comparing the results with existing analytical predictions and experimental observations. As test-cases, the DDD is used to study the activation of Bardeen–Herring sources upon the application of an external stress or under vacancy supersaturation. Loop shrinkage and expansion due to vacancy emission or absorption is shown to be well described by our model. In particular, the model naturally describes the coarsening of a population of loops having different sizes.  相似文献   

17.
K. Gururaj  M. Fivel 《哲学杂志》2015,95(12):1368-1389
Our goal in this work is to investigate post-irradiation tensile deformation of FCC grains using 3D dislocation dynamics (DD) simulations. We focus on irradiation dose conditions where plastic strain is expected to localize into defect-depleted channels. Two DD simulation types are used for treating distinct space and time scale effects. Type-I simulations describe the formation of single dislocation channels at a high resolution (nm). Here, the irradiation-induced defects are described explicitly, in the form of prismatic dislocation loops. Type-II simulations are used to describe the channel multiplication process itself, i.e. at the grain scale (μm). This time, the irradiation-induced defects are treated in a simplified way, taking advantage of Type-I simulation results. Simulated channel spacing is found to depend on three main input parameters: the dose-dependent stress level, grain size and critical cross-slip stress. The results are rationalized in terms of a micro-model based on simple, finite-sized dislocation arrangements. The model is further validated by comparison with available experimental evidence.  相似文献   

18.
Molecular dynamics simulation was used to verify a speculation of the existence of a certain face-centred cubic (FCC) to body-centred cubic (BCC) phase transformation pathway. Four FCC metals, Ni, Cu, Au and Ag, were stretched along the [1?0?0] direction at various strain rates and temperatures. Under high strain rate and low temperature, and beyond the elastic limit, the bifurcation of the FCC phase occurred with sudden contraction along one lateral direction and expansion along the other lateral direction. When the lattice constant along the expansion direction converged with that of the stretched direction, the FCC phase transformed into an unstressed BCC phase. By reducing the strain rate or increasing the temperature, dislocation or ‘momentum-induced melting’ mechanisms began to control the plastic deformation of the FCC metals, respectively.  相似文献   

19.
Ruizhi Li 《哲学杂志》2015,95(25):2747-2763
Stacking fault tetrahedra (SFTs) are volume defects that typically form by the clustering of vacancies in face-centred cubic (FCC) metals. Here, we report a dislocation-based mechanism of SFT formation initiated from the semi-coherent interfaces of Cu–Al nanoscale multilayered metals subjected to out-of-plane tension. Our molecular dynamics simulations show that Shockley partials are first emitted into the Cu interlayers from the dissociated misfit dislocations along the Cu–Al interface and interact to form SFTs above the triangular intrinsic stacking faults along the interface. Under further deformation, Shockley partials are also emitted into the Al interlayers and interact to form SFTs above the triangular FCC planes along the interface. The resulting dislocation structure comprises closed SFTs within the Cu interlayers which are tied across the Cu–Al interfaces to open-ended SFTs within the Al interlayers. This unique plastic deformation mechanism results in considerable strain hardening of the Cu–Al nanolayered metal, which achieves its highest tensile strength at a critical interlayer thickness of ~4 nm corresponding to the highest possible density of complete SFTs within the nanolayer structure.  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号