Chemical vapor deposition of ZrxTi1−xO2 and HfxTi1−xO2 thin films using the composite anhydrous nitrate precursors

Zr-Ti and Hf-Ti composite nitrates were successfully developed as single-source precursors for the chemical vapor deposition (CVD) of Zr_xTi_1−xO₂ and Hf_xTi_1−xO₂ thin films. The Zr-Ti nitrate can be assumed as a solid solution of the individual Zr and Ti nitrates, and the Zr/Ti molar ratio in the deposited Zr_xTi_1−xO₂ films is consistent with that in the precursor. The Hf-Ti nitrate appears to be a mixture of the Hf and Ti nitrates and the composition of the deposited Hf_xTi_1−xO₂ films depends remarkably on the heating time of precursor. Both Zr_xTi_1−xO₂ and Hf_xTi_1−xO₂ films exhibit trade-off properties between band gap and dielectric constant. The obtained results suggest that Zr_xTi_1−xO₂ and Hf_xTi_1−xO₂ films are promising candidates for gate dielectric application to improve the scalability and reduce the leakage current of the future complementary metal-oxide-semiconductor (CMOS) devices.     

Superhydrophilic stability enhancement of RF co-sputtered TixSi1−xO2 thin films in dark

Ti_xSi_1−xO₂ compound thin-film systems were deposited by reactive RF magnetron co-sputtering technique. The effect of Ti concentration on the hydrophilicity of Ti_xSi_1−xO₂ compound thin films was studied and it was shown that the films with Ti_0.6Si_0.4O₂ composition possess the best hydrophilic property among all the grown samples. Surface ratio and average roughness of the thin films were measured by atomic force microscopy (AFM). Surface chemical states and stoichiometry of the films were determined by X-ray photoelectron spectroscopy (XPS). In addition, XPS revealed that the amount of Ti-O-Si bonds in nanometer depth from the surface of the Ti_0.6Si_0.4O₂ films was the maximum, which resulted in the most stable superhydrophilic property. According to XRD data analysis for the pure TiO₂ films, the polycrystalline anatase phase was formed with an average grain size of about 15 nm. Moreover, amorphous phase was also formed for the Ti_xSi_1−xO₂ compound systems due to presence of silicon in the films. Finally, optical properties of the films such as transmission, reflection and band gap energy were investigated using UV-vis spectrophotometry. It was found that the transmittance of the films was decreased with increasing Ti concentration in the films.     

Compositional dependence of ferroelectric properties of highly c-axis oriented Bi4−xNdxTi3O12 film capacitors

Highly c-axis oriented neodymium-modified bismuth titanate (Bi_4−xNd_xTi₃O₁₂) films having a variety of neodymium (Nd) contents were successfully grown on Pt/TiO₂/SiO₂/Si(100) substrates using metal-organic sol decomposition. After systematically examining ferroelectric properties of the c-axis oriented Bi_4−xNd_xTi₃O₁₂ film capacitors as a function of the Nd-content, we concluded that the capacitor with x=0.85 had the largest remanent polarization. The Bi_3.15Nd_0.85Ti₃O₁₂ capacitor fabricated using a top Pt electrode showed well-saturated polarization-electric field (P-E) switching curves with the remanent polarization (P_r) of 51 μC/cm² and the coercive field (E_c) of 99 kV/cm at an applied voltage of 10 V. More importantly, the Pt/Bi_3.15Nd_0.85Ti₃O₁₂/Pt capacitor exhibited fatigue-free behavior up to 4.5×10¹⁰ read/write switching cycles at a frequency of 1 MHz. The capacitor also demonstrated an excellent charge-retaining ability and a strong resistance against the imprinting failure.     

Ferroelectric properties of Bi3.25−x/3La0.75Ti3−xNbxO12 films prepared by pulsed laser deposition

Bi₄Ti₃O₁₂ (BiT), Bi_3.25La_0.75Ti₃O₁₂ (BLT), Bi_4−x/3Ti_3−xNb_xO₁₂ (BTN) and Bi_3.25−x/3La_0.75Ti_3−xNb_xO₁₂ (BLTN) thin films have been prepared by pulsed laser deposition. BTN and BLTN films exhibit a maximum in the remanent polarization P_r at a Nb content x=0.018. At this Nb content, the BLTN film has a P_r value (25 μC/cm²) that is much higher than that of BiT and a coercive field similar to that of BiT. The polarization of this BLTN film is fatigue-free up to 10⁹ switching cycles. The high fatigue resistance is mainly due to the substitution of Bi³⁺ ions by La³⁺ ions at the A site and the enhanced P_r arises largely from the replacement of Ti⁴⁺ ions by Nb⁵⁺ ions at the B site. The mechanisms behind the effects of the substitution at the two sites are discussed.     

Ferroelectric properties of highly c-axis oriented Bi4−xLaxTi3O12 film-based capacitors

Highly c-axis oriented lanthanum-modified bismuth titanate (Bi_4−xLa_xTi₃O₁₂) films having a variety of lanthanum (La) contents were grown on Pt/TiO₂/SiO₂/Si(100) substrates using metal-organic sol deposition and subsequent annealing at 650 °C for 1 h. After systematically examining the ferroelectric properties of Bi_4−xLa_xTi₃O₁₂ films as a function of the La-content, it was concluded that the film with x=0.85 had the largest remanent polarization in the direction parallel to the c-axis. The Pt/Bi_3.15La_0.85Ti₃O₁₂/Pt capacitor showed a well-saturated polarization-electric field (P-E) switching curve with the switching remanent polarization (2P_r) value of 33 μC/cm² and the coercive field (E_c) of 68 kV/cm at an applied voltage of 10 V. More importantly, the capacitor exhibited fatigue-free behavior up to 6.5×10¹⁰ read/write switching cycles at a frequency of 1 MHz. The capacitor also demonstrated an excellent charge-retaining ability and a strong resistance against the imprinting failure.     

Influence of mobile space charges on electrical properties of ferroelectric Bi3.5La0.5Ti3O12 thin films

Lanthanum-substituted bismuth titanate, Bi_3.5La_0.5Ti₃O₁₂ (i.e., x=0.5 in Bi_4−xLa_xTi₃O₁₂), thin films have been grown on Pt/Ti/SiO₂/Si substrates using pulsed laser deposition. The frequency dependence of the real part ε′(ω) and the imaginary part ε″(ω) of the dielectric constant has been studied. The ε′(ω) does not show any sudden change within the frequency range of 10²-10⁶ Hz. In contrast, the ε″(ω) shows a large dispersion as frequency decreases. The observed relaxation behavior in ε″(ω) can be explained in terms of a migration of oxygen vacancies in (Bi₂O₂)²⁺ layers, not in Bi₂Ti₃O₁₀ perovskite layers.     

Electrical properties of neodymium doped CaBi4Ti4O15 ceramics

Neodymium doped bismuth layer structure ferroelectrics (BLSFs) ceramics CaBi_4−xNd_xTi₄O₁₅ (x=0, 0.25, 0.50, 0.75) were prepared by solid-state reaction method. X-ray diffraction pattern showed that single phase was formed when x=0-0.75. The refined lattice parameters showed that a (b) axes decrease at x=0.25 and increase with more Nd³⁺ dopant. The effects of Nd³⁺ doping on the dielectric and ferroelectric properties of CaBi₄Ti₄O₁₅ ceramics are studied. Nd³⁺ dopant decreased the Curie temperature linearly, and the dielectric loss, tan δ, as well. The remnant polarization of Nd³⁺ doped CaBi₄Ti₄O₁₅ ceramics was increased by 80% at x=0.25, while more Nd³⁺ dopant decreased the remnant polarization. CaBi_3.75Nd_0.25Ti₄O₁₅ ceramics had the largest piezoelectric constant d₃₃. The structure and properties of CaBi_4−xNd_xTi₄O₁₅ ceramics showed that Nd³⁺ may occupy different crystal locations when Nd³⁺ content x is less than 0.25 and more than 0.50.     

Observation of magnetoelectric behavior at room temperature in Pb(FexTi1−x)O3

The co-existence of ferroelectric and ferromagnetic properties at room temperature is very rarely observed. We have been successful in converting ferroelectric PbTiO₃ into a magnetoelectric material by partly substituting Fe at the Ti site. The Pb(Fe_xTi_1−x)O₃ system exhibits ferroelectric and ferromagnetic ordering at room temperature. Even more remarkably, our results demonstrate a coupling between the two order parameters. Hence it could be a futuristic material to provide cost effective and simple path for designing novel electromagnetic devices.     

Metastable ferromagnetic phases with predictable Tcs in La2MnCo1−xNixO6

Metastable ferromagnetic phases, for different compositions in La₂MnCo_1−xNi_xO₆, are obtained for samples synthesized by a low-temperature method and annealed in air at different temperatures in the range 200-1350 °C. The T_cs of the ferromagnetic phases vary linearly between those of the phases of the end members. T_cs of the different phases of La₂MnCo_1−xNi_xO₆ can be predicted based on the T_cs and spin states of Mn, Co and Ni in the different phases of the end members, La₂MnCoO₆ and La₂MnNiO₆.     

The magnetic behavior of La1−xTbxMn2Si2 (0≤x≤0.3) in weak magnetic fields

The structure and magnetic properties of La_1−xTb_xMn₂Si₂ (0≤x≤0.3) were studied by X-ray powder diffraction and DC magnetization measurements. All the compounds crystallize in ThCr₂Si₂-type structure. Substitution of Tb for La led to a linear decrease in the lattice constants and the unit-cell volume. A ferromagnetic phase for x≤0.15, and an antiferromagnetic phase for x=0.3 have been observed at about room temperature, whereas the compounds with x=0.2 and 0.25 exhibit a magnetic phase transition from ferromagnetism to antiferromagnetism.     

The size and strain effects on the Raman spectra of Ce1−xNdxO2−δ (0≤x≤0.25) nanopowders

Ultrafine Ce_1−xNd_xO_2−δ (x=0-0.25) powders were synthesized by self-propagating room temperature synthesis. Raman spectra were measured at room temperature in the 300-700 cm⁻¹ spectral range. The shift and asymmetric broadening of the Raman F_2g mode at about 454 cm⁻¹ in pure and doped ceria samples could be explained with combined size and inhomogenous strain effects. Increased concentration of O²⁻ vacancies with doping is followed by an appearance of new Raman feature at about 545 cm⁻¹.     

The surface modification of nanoporous SiOx thin films with a monofunctional organosilane

The surfaces of nanostructured, porous SiO_x/Si (air-oxidized Si) and SiO_x thin films, deposited by excimer laser ablation in He and He + O₂ gas ambients, respectively, have been modified by the deposition of a monofunctional organosilane. They were characterized using photoacoustic Fourier-transform infrared (FTIR) X-ray photoelectron (XPS) spectroscopies, and field-emission scanning electron microscopy (FESEM). Photoacoustic FTIR analysis indicates that the organosilane has hydrolyzed to form a silanol, which has chemically reacted with SiO_x through its surface silanol (SiOH) group, to form siloxane (SiOSi) structures. An enhanced IR spectral signal is found, due to the expansion and contraction of both the pores of the solid and the gas within them.     

Enhanced electrical properties of pentacene-based organic thin-film transistors by modifying the gate insulator surface

A reliable surface treatment for the pentacene/gate dielectric interface was developed to enhance the electrical transport properties of organic thin-film transistors (OTFTs). Plasma-polymerized fluorocarbon (CFx) film was deposited onto the SiO₂ gate dielectric prior to pentacene deposition, resulting in a dramatic increase of the field-effect mobility from 0.015 cm²/(V s) to 0.22 cm²/(V s), and a threshold voltage reduction from −14.0 V to −9.9 V. The observed carrier mobility increase by a factor of 10 in the resulting OTFTs is associated with various growth behaviors of polycrystalline pentacene thin films on different substrates, where a pronounced morphological change occurs in the first few molecular layers but the similar morphologies in the upper layers. The accompanying threshold voltage variation suggests that hole accumulation in the conduction channel-induced weak charge transfer between pentacene and CFx.     

Raman spectroscopic studies of PbxLa1−xTi1−x/4O3 thin films grown on Si substrates by RF magnetron sputtering

A systematic spectroscopic investigation of Pb_xLa_1−xTi_1−x/4O₃ (PLT) thin films grown on PbO_x/Pt/Ti/SiO₂/Si substrate by RF magnetron sputtering was performed by using confocal Raman spectroscopy. Influence of the growth condition modification including different growth temperatures, with various buffer layer thickness, and post-annealing treatments were analyzed with taking advantages of the corresponding Raman spectral band variation in the respective process. Significant change in the spectral bands occurred with the alteration of the growth condition, and the related mechanisms were discussed after spectral deconvolution, providing reliable information about the direction for film growth.     

Dielectric properties of SrBi2−xPrxNb2O9 ceramics (x=0, 0.04 and 0.2)

SrBi_2−xPr_xNb₂O₉ (x=0, 0.04 and 0.2) ceramics were prepared by a solid state reaction method. X-ray diffraction analysis indicated that single-phase layered perovskite structure ferroelectrics were obtained. A relaxor behavior of frequency dispersion was observed among Pr-doped SrBi₂Nb₂O₉. The degree of frequency dispersion ΔT increased from 0 for x=0-7 °C for x=0.2, and the extent of relaxor behavior γ increased from 0.94 for x=0-1.45 for x=0.2. The substitution of Pr ions for Bi³⁺ ions in the Bi₂O₂ layers resulted in a shift of the Curie point to lower temperatures and a decrease in remanent polarization. In addition, the coercive field 2E_c reduced from 110 kV/cm for an undoped specimen to 90 kV/cm for x=0.2.     

Atomistic computer simulation studies of La1−xSrxVO3

Static computer simulation techniques have been employed for structural investigation of the La_1−xSr_xVO₃ series. Potential parameters for V³⁺-O²⁻ and V⁴⁺-O²⁻ have been derived which reproduces the crystal structures of end members with sufficient accuracy. Variations of lattice parameters and bond distances with Sr concentration have been studied. The calculated lattice parameters decrease with increase in the Sr concentration. A structural phase transition from orthorhombic to cubic is observed at 50% Sr doping level.     

Preparation of (CdO)1−x(PbO)x and (CdS)1−x(PbS)x thin films by spray pyrolysis technique and their characterization

Mixed thin films of (CdO)_1−x(PbO)_x and (CdS)_1−x(PbS)_x (x=0.25) were prepared on glass substrates by spray pyrolysis technique for various substrate temperatures 300, 320 and 340 °C. Structural and optical properties were studied. XRD studies reveal the formation of mixed films. The substrate temperature of 340 °C seems to be critical for the formation of CdO-PbO mixed films. It is observed that (CdS)_1−x(PbS)_x mixed films were formed at all the three substrate temperatures. The direct band gap value of (CdO)_1−x(PbO)_x and (CdS)_1−x(PbS)_x mixed films is about 2.6 and 2.37 eV, respectively.     

The role of oxygen vacancies in magnetism of CoxTi1−xO2−δ films on Si(001) prepared by sol-gel method

Co_xTi_1−xO_2−δ films have been prepared on Si(001) substrates by sol-gel method. When heat treated in air, Co_xTi_1−xO_2−δ films are non-ferromagnetic at room temperature. However, after further vacuum annealing or hydrogenation, Co_xTi_1−xO_2−δ films show room-temperature ferromagnetism (RTFM). When the vacuum annealed Co_xTi_1−xO_2−δ films are reheated in air, the magnetic moments of the films strongly reduce. After these films are vacuum annealed once again, the magnetic moments are greatly enhanced, confirming the role of vacuum annealing in ferromagnetism of Co_xTi_1−xO_2−δ films. The x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and measurements of magnetization (M) vs temperature (T) fail to detect Co clusters in the vacuum annealed and the hydrogenated Co_xTi_1−xO_2−δ films. Oxygen vacancies are formed in Co_xTi_1−xO_2−δ films after vacuum annealing and hydrogenation, determined by XRD and XPS measurements. These results indicate that oxygen vacancies created by vacuum annealing and hydrogenation play an important role in the generation of RTFM in Co_xTi_1−xO_2−δ films.     

Preparation of five-layered Si/SixGe1−x nano-films by RF helicon magnetron sputtering

Five-layered Si/Si_xGe_1−x films on Si(1 0 0) substrate with single-layer thickness of 30 nm, 10 nm and 5 nm, respectively were prepared by RF helicon magnetron sputtering with dual targets of Si and Ge to investigate the feasibility of an industrial fabrication method on multi-stacked superlattice structure for thin-film thermoelectric applications. The fine periodic structure is confirmed in the samples except for the case of 5 nm in single-layer thickness. Fine crystalline Si_xGe_1−x layer is obtained from 700 °C in substrate temperature, while higher than 700 °C is required for Si good layer. The composition ratio (x) in Si_xGe_1−x is varied depending on the applied power to Si and Ge targets. Typical power ratio to obtain x = 0.83 was 7:3, Hall coefficient, p-type carrier concentration, sheet carrier concentration and mobility measured for the sample composed of five layers of Si (10 nm)/Si_0.82Ge_0.18 (10 nm) are 2.55 × 10⁶ /°C, 2.56 × 10¹² cm⁻³, 1.28 × 10⁷ cm⁻², and 15.8 cm⁻²/(V s), respectively.     

Infrared optical properties of Ba(Zr0.20Ti0.80)O3 and Ba(Zr0.30Ti0.70)O3 thin films prepared by sol-gel method

Ba(Zr_xTi_1−x)O₃ (BZT) (x = 0.20 and 0.30) thin films are deposited on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrate by sol-gel method. X-ray diffraction patterns show that the thin films have a good crystallinity. Optical properties of the films in the wavelength range of 2.5-12 μm are studied by infrared spectroscopic ellipsometry (IRSE). The optical constants of the BZT thin films are determined by fitting the IRSE data using a classical dispersion formula. As the wavelength increases, the refractive index decreases, while the extinction coefficients increase. The effective static ionic charges are derived, which are smaller than that in a purely ionic material for the BZT thin films.