Interface photoluminescence of the SnO2:F/CdS:In/CdTe thin film solar cells prepared partially by the spray pyrolysis technique

CdS/CdTe solar cells were built by depositing a 200 nm layer of SnO₂:F on glass substrates by the spray pyrolysis (SP) technique, a 500 nm CdS:In layer by the same technique and a 1–1.5 μm CdTe layer by vacuum evaporation. The cells were CdCl₂ heat-treated in nitrogen atmosphere for 30 min at 350 °C. The photoluminescence (PL) spectra were measured at the CdS/CdTe interface for two cells with different values of the CdTe layer's thickness at the temperature T=60 K. A deconvolution peak fit was performed from which it is found that the peaks are characteristic of the solid solution CdS_xTe_1?x. The parabolic relation that relates the bandgap energy with the composition was used to estimate x, where x is [S]/([Te]+[S]) and [Te], [S] are the concentrations of Te and S atoms, respectively. The results show that the interface is smooth and the change of the bandgap occurs gradually. The solar cell of the thicker CdTe layer showed more interdiffusion at the CdS/CdTe interface and better photovoltaic characteristics.     

1.55 μm silicon-based reflection-type waveguide-integrated thermo-optic 2 × 2 switch

In this work a waveguide-integrated 2 × 2 switch operating at the infrared communication wavelength of 1550 nm is proposed and theoretically discussed. The device is based on the total internal reflection (TIR) phenomenon and the thermo-optic effect (TOE) in hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si). It takes advantage of a bandgap-engineered a-Si:H layer to explore the properties of an optical interface between materials showing similar refractive indexes but different thermo-optic coefficients. In particular, thanks to modern plasma-enhanced chemical vapour deposition (PECVD) techniques, the refractive index of the amorphous film can be properly tailored to match that of c-Si at a given temperature. TIR may be therefore achieved at the interface by acting on the temperature. The device is integrated in a 4 μm-wide and 3 μm-thick single-mode rib waveguide. The substrate is a silicon-on-insulator (SOI) wafer with an oxide thickness of 500 nm. We calculated an output crosstalk always better than 24 dB and insertion losses as low as 3.5 dB.     

The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(1 1 1) substrates by MOCVD

In the present paper, the effects of nitridation on the quality of GaN epitaxial films grown on Si(1 1 1) substrates by metal–organic chemical vapor phase deposition (MOCVD) are discussed. A series of GaN layers were grown on Si(1 1 1) under various conditions and characterized by Nomarski microscopy (NM), atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD), and room temperature (RT) photoluminescence (PL) measurements. Firstly, we optimized LT-AlN/HT-AlN/Si(1 1 1) templates and graded AlGaN intermediate layers thicknesses. In order to prevent stress relaxation, step-graded AlGaN layers were introduced along with a crack-free GaN layer of thickness exceeding 2.2 μm. Secondly, the effect of in situ substrate nitridation and the insertion of an Si_xN_y intermediate layer on the GaN crystalline quality was investigated. Our measurements show that the nitridation position greatly influences the surface morphology and PL and XRD spectra of GaN grown atop the Si_xN_y layer. The X-ray diffraction and PL measurements results confirmed that the single-crystalline wurtzite GaN was successfully grown in samples A (without Si_xN_y layer) and B (with Si_xN_y layer on Si(1 1 1)). The resulting GaN film surfaces were flat, mirror-like, and crack-free. The full-width-at-half maximum (FWHM) of the X-ray rocking curve for (0 0 0 2) diffraction from the GaN epilayer of the sample B in ω-scan was 492 arcsec. The PL spectrum at room temperature showed that the GaN epilayer had a light emission at a wavelength of 365 nm with a FWHM of 6.6 nm (33.2 meV). In sample B, the insertion of a Si_xN_y intermediate layer significantly improved the optical and structural properties. In sample C (with Si_xN_y layer on Al_0.11Ga_0.89N interlayer). The in situ depositing of the, however, we did not obtain any improvements in the optical or structural properties.     

Deposition of device quality amorphous silicon and solar cell from argon dilution of silane

In our present study hydrogenated amorphous silicon (a-Si:H) thin films and solar cells have been prepared in a conventional single chamber rf-PECVD unit from silane–argon mixture by varying radio frequency (rf) power densities from 6 mW/cm² to 50 mW/cm². By optimizing the properties of the intrinsic material we have chosen a material which is deposited at 6 mW/cm² rf power density, 0.2 Torr pressure, 175 ^oC substrate temperature and by 97% argon dilution. For this material minority carriers (holes) diffusion length (L_d) measured in the as deposited state is 180 nm and it degrades by 15% after light soaking. This high L_d value indicates that the material is of device quality. We have fabricated a single junction solar cell having the structure p-a-SiC:H/i-a-Si:H/n-a-Si:H without optimizing the doped layers. This set exhibits a mean open circuit voltage of 0.8 V and conversion efficiency of 7.7%. After light soaking conversion efficiency decreases by 15% which demonstrates that it is possible to deposit device grade material and solar cells from silane–argon mixture.     

Optical properties of amorphous Si/SiO2superlattice

Amorphous Si/SiO₂(a-Si/SiO₂) superlattices have been fabricated by the magnetron sputtering technique. The superlattice with an Si layer thickness of 1.8 nm has been characterized by transmission electron microscopy (TEM). The result indicates that most of the regions in the Si layer consist of amorphous phase, while regular structure appears in some local regions. This is in agreement with the Raman scattering spectroscopy. The optical absorption spectrum and photoluminescence (PL) spectrum have been measured. Moreover, the third-order optical nonlinearity χ⁽³⁾of this superlattice has been measured. To our knowledge, this is the first investigation of the nonlinear absorption and refractive index of an a-Si/SiO₂superlattice using the Z -scan technique. The real and imaginary parts of χ⁽³⁾have been found to be 1.316  ×  10 ^− 7eus and  − 5.596  ×  10 ^− 7eus, respectively, which are about two orders of magnitude greater than those of porous silicon. The results may be attractive for potential application in electro-optics devices.     

Ti/CeOx(111) interfaces studied by XPS and STM

Low coverage of Ti was deposited on the well-ordered CeO_x(111) (1.5 < x < 2) thin films grown on Ru(0001) by physical vapor deposition at room temperature. The structure and interaction of Ti/ceria interfaces were investigated with X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED) and scanning tunneling microscopy (STM) techniques under ultrahigh vacuum conditions. XPS data indicate that the deposition of Ti on both oxidized and reduced ceria surfaces causes the partial reduction of Ce from + 4 to + 3 state. Ti is formally in the + 4 state. STM data show the formation of small atomic-like titania features at 300 K, which coalesce to form chain structures upon heating. It is demonstrated in the study that the deposition of Ti can form mixed metal oxides at the interface and modify both electronic and structural properties of the ceria support. The structural study of Ti/ceria interfaces can be a key for understanding the higher catalytic activity of the Ti–CeO_x mixed oxide catalysts as compared with the individual pure oxides.     

The improvement of pyroelectric properties of PZT thick films on Si substrate by TiOx barrier layer

The effects of TiO_x diffusion barrier layer thickness on the microstructure and pyroelectric characteristics of PZT thick films were studied in this paper. The TiO_x layer was prepared by thermal oxidation of Ti thin film in air and the PZT thick films were fabricated by electrophoresis deposition method (EPD). To demonstrate the barrier effect of TiO_x layer, the electrode/substrate interface and Si content in PZT thick films were characterized by scanning electron microscope (SEM) and X-ray energy dispersive spectroscopy (EDS), respectively. The TiO_x barrier thickness shows significant influence on the bottom electrode and the pyroelectric performance of the PZT thick films. The average pyroelectric coefficient of PZT films deposited on 400 nm TiO_x layer was about 8.94 × 10⁻⁹ C/(cm² K), which was improved by 70% than those without diffusion barrier layer. The results showed in this study indicate that TiO_x barrier layer has great potential in fabrication of PZT pyroelectric device.     

The studies on structural and thermal properties of delithiated LixNi1/3Co1/3Mn1/3O2 (0 < x ≤ 1) as a cathode material in lithium ion batteries

The structural and thermal properties of the delithiated Li_xNi_1/3Co_1/3Mn_1/3O₂ (0 < x ≤ 1) material have been investigated by using diffraction and thermoanalytical techniques such as XRD and TG-DSC methods. XRD result shows that the delithiated materials maintain the O3-type structure with defined stoichiometric number at the range of 0.24 < x ≤ 1, exhibiting good crystal structural stability. The cobalt and nickel ions in the delithiated materials change their valence state (i.e. Co³⁺ to Co⁴⁺ and Ni³⁺ to Ni⁴⁺) when x < 0.49; the irreversible changes of the transformation may affect the first cycle of charge–discharge efficiency of the materials. A comparison of the results of TG-DSC with TPD-MS shows that the irreversible change of oxygen species during the delithiation process of Li_xNi_1/3Co_1/3Mn_1/3O₂ have great influence on the structural and thermal stability and reversibility of the materials.     

FMR investigation of magnetic anisotropies in Fe/Au superlattices

Fe(xML)/Au(xML) superlattices (1⩽x⩽4, ML: monatomic layer thickness) have been investigated by the ferromagnetic resonance method at room temperature. It has been confirmed that out-of-plane anisotropy field H_u shows oscillatory behavior as a function of Fe layer thickness with a period of 1 ML as reported previously from magnetization measurements. In addition, we have found that the in-plane fourfold anisotropy field H₂ oscillates in a similar manner. The easy magnetization axis for x⩾2.25 is Fe [1 1 0] in contrast with the case of bulk Fe, and the values of H₂ show maxima for x=2.5 and 3.5, suggesting that the atomic steps at interfaces are formed along the Fe [1 1 0] direction. Furthermore, the interface roughness for x=non-integer causes wide distributions of H_u and H₂ compared to those for x=integer with flat interfaces.     

Correlation between phosphorus concentration and opto-electrical properties of doped a-Si:H films

Phosphorus doped hydrogenated amorphous silicon (a-Si:H) films were prepared by decomposition of silane using RF plasma glow discharge. Both DC dark conductivity measurements, and spectrophotometric optical measurements through the range 200–3000 nm were recorded for the prepared films. The DC conductivity activation energy E_a decreased from 0.8 eV for the undoped sample to 0.34 eV for the highest used doping value. The optical energy gap E_g decreased ranging from 1.66 eV to 1.60 eV. The refractive index n, the density of charge carriers N/m* and the plasma frequency ω_p showed an opposite behavior, i.e. an increase in value with doping. Fitting the dispersion values to Sellmeier equation led to the determination of the material natural frequency of oscillating particles. A correlation between the changes in these parameters with the doping has been attempted.     

Tuneability of Sm(1 − x)CexFeO3 ± λ perovskites: Thermal stability and electrical conductivity

Trimetallic perovskite oxides, Sm_(1 ? x)Ce_xFeO_3 ± λ (x = 0–0.05), were prepared by thermal decomposition of amorphous citrate precursors followed by calcinations. The material properties of the substituted perovskites were characterized by X-ray diffraction (XRD), X-ray florescence spectroscopy (XRF), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The doped materials exhibited a single perovskite phase in air up to 1350 °C and have specific surface areas in the range of 2.696–8.665 m²/g. In reducing atmosphere (5%v/vH₂/N₂), the unsubstituted perovskite (x = 0) decomposed into two phases while the ceria stabilized materials (x = 0.01, x = 0.03, x = 0.05) remained in a single phase as revealed by XRD analysis. Their conductivities were measured by the four point probe method in air and in dilute hydrogen (5%v/vH₂/N₂) separately. The ceria substituted materials show increased stability versus reduction and phase separation for a wide temperature range (up to 1000 °C). Although undoped SmFeO₃ has higher conductivity under oxidizing conditions than ceria doped SmFeO₃ due its p-type nature, the situation is reversed under reducing conditions. The ceria substituted perovskites (Sm_(1 ? x)Ce_xFeO_3 ± λ, x = 0–0.05) showed higher conductivity in reducing than in oxidizing conditions, suggesting that ceria doping at the A-site has changed the SmFeO₃ from p-type to n-type semi-conducting behavior.     

Influence of growth morphology on the Néel temperature of CrRu thin films and heterostructures

Dimensionality effects on epitaxial and polycrystalline Cr_1?xRu_x alloy thin films and in Cr/Cr–Ru heterostructures are reported. X-ray analysis on Cr_0.9965Ru_0.0035 epitaxial films indicates an increase in the coherence length in growth directions (1 0 0) and (1 1 0) with increasing thickness (d), in the range 20≤d≤300 nm. Atomic force microscopy studies on these films shows pronounced vertical growth for d>50 nm, resulting in the formation of columnar structures. The Néel temperatures (T_N) of the Cr_0.9965Ru_0.0035 films show anomalous behaviour as a function of d at thickness d≈50 nm. It is interesting to note that this thickness corresponds to that for which a change in film morphology occurs. Experiments on epitaxial Cr_1?xRu_x thin films, with 0≤x≤0.013 and d=50 nm, give T_N–x curves that correspond well with that of bulk Cr_1?xRu_x alloys. Studies on Cr/Cr_0.9965Ru_0.0035 superlattices prepared on MgO(1 0 0), with the Cr layer thickness varied between 10 and 50 nm, keeping the Cr_0.9965Ru_0.0035 thickness constant at 10 nm, indicate a sharp decrease in T_N as the Cr separation layers reaches a thickness of 30 nm; ascribed to spin density wave pinning in the Cr layers for d<30 nm by the adjacent CrRu layers.     

Proton diffusion in the superprotonic phase of [(NH4)1 − xRbx]3H(SO4)2 as studied by 1H spin-lattice relaxation

Proton diffusion in [(NH₄)_1 ? xRb_x]₃H(SO₄)₂ (0 < x < 1) has been studied by means of ¹H spin-lattice relaxation times, T₁. The relaxation times were measured at 200.13 MHz in the range of 296–490 K and at 19.65 MHz in the range of 300–470 K. In the high-temperature phase (phase I), translational diffusion of the acidic protons relaxes both the acidic protons and the ammonium protons. Spin diffusion averages the relaxation rate of the two kinds of protons, whereas proton exchange between them are slow. The spin-lattice relaxation times in phase I were analyzed theoretically, and parameters of proton diffusion were obtained. The mean residence time of the acidic protons increases with increase in x for [(NH₄)_1 ? xRb_x]₃H(SO₄)₂ (0 ≤ x ≤ 0.54). Rb₃H(SO₄)₂ does not obey this trend. The results of NMR well explain the macroscopic proton conductivity.     

Magneto-optical imaging of polycrystalline FeTe1−xSex prepared at various conditions

We have prepared high-quality polycrystalline FeTe_1?xSe_x by sintering at different temperatures and characterized their structural and magnetic properties with X-ray diffraction, magnetization measurements, and magneto-optical imaging. The intragranular J_c was estimated to be 5 × 10⁴ A/cm², which is smaller than the single crystal, but still in the range for practical applications.     

Development of perovskite and phase transition in lead cobalt niobate modified lead zirconate titanate system

Ferroelectric lead zirconate titanate–lead cobalt niobate ceramics with the formula (1 − x)Pb(Zr_1/2Ti_1/2)O₃–xPb(Co_1/3Nb_2/3)O₃ where x = 0.0–0.5 were fabricated using a high temperature solid-state reaction method. The formation process, the structure and homogeneity of the obtained powders have been investigated by X-ray diffraction method as well as the simultaneous thermal analysis of both differential thermal analysis (DTA) and thermogravimetry analysis (TGA). It was observed that for the binary system (1 − x)Pb(Zr_1/2Ti_1/2)O₃–xPb(Co_1/3Nb_2/3)O₃, the change in the calcination temperature is approximately linear with respect to the PCoN content in the range x = 0.0–0.5. In addition, X-ray diffraction indicated a phase transformation from a tetragonal to a pseudo-cubic phase when the fraction of PCoN was increased. The dielectric permittivity is remarkably increased by increasing PCoN concentration. The maximum value of remnant polarization P_r (25.3 μC/cm²) was obtained for the 0.5PZT–0.5PCoN ceramic.     

Ternary effects on the optical interface phonons in onion-like GaN/AlxGa1 − xN quantum dots

The interface optical phonons and its ternary effects in onion-like quantum dots are studied by using dielectric continuum model and the modified random-element isodisplacement model. The dispersion relations, the electron–phonon interactions and ternary effects on the interface optical phonons are calculated in the GaN/Al_xGa_1 − xN onion-like quantum dots. The results show that aluminium concentration has important influence on the interface optical phonons and electron–phonon interactions in GaN/Al_xGa_1 − xN onion-like quantum dots. The frequencies of interface optical phonons and electron–phonon coupling strengths change linearly with increase of aluminium concentration in high frequency range, and do not change linearly with increasing aluminium concentration in low frequency range.     

Dielectric and piezoelectric properties of Li-substituted lead-free (Bi0.5Na0.5)TiO3–(Bi0.5K0.5)TiO3–BaTiO3 ceramics

Lead-free 0.79(Bi_0.5Na_0.5)TiO₃–0.14[Bi_0.5(K_0.5−xLi_x)]TiO₃–0.07BaTiO₃ (BNBK79 + xLi, x = 0.0, 0.1, 0.2, 0.25, 0.3, and 0.4) ceramics were prepared by conventional solid state reaction process. The crystalline structures and surface morphologies are investigated by X-ray diffraction method and scanning electron microscopy. Dielectric and piezoelectric properties were measured. With increasing of lithium substitution, the Curie temperatures of BNBK79 + xLi ceramics increase, but the maximum value of the dielectric constant decreases. And a relatively large remnant polarization of 17.6 μC/cm² and 157 pC/N of d₃₃ has been obtained when x = 0.3.     

Structural and electrochemical properties of layered lithium nitridocuprates Li3 − xCuxN

We report a systematic study of the layered lithium nitridocuprates Li_3 ? xCu_xN with 0.1 ≤ x ≤ 0.39. The structural data obtained from experimental XRD patterns, Rietveld refinements and unit cell parameters calculation vs x, indicate that copper (I) substitute interlayer lithium ions in the parent nitride Li₃N to form the Li_3 ? xCu_xN compound without any Li vacancy in the Li₂N^? layer. Electrochemical results report Li insertion into the corresponding layered structures cannot take place in the 1.2/0.02 V voltage range as in the case of lithium into nitridonickelates and nitridocobaltates. However, in the initial charge process of Li_3 ? xCu_xN at 1.4 V leading to a specific capacity higher than 1000 mA h/g, the oxidation of copper and nitride ions is probably involved inducing a strong structural disordering process. As a consequence a new rechargeable electrochemical system characterized by discharge–charge potential of ≈ 0.3 V/1.2 V appears from the second cycle. Cycling experiments 0.02 V voltage/0.02 V range induce a complete destruction of the layered host lattice and the presence of Cu₃N in the charge state suggests a conversion reaction. The capacity recovered in the 1.4/0.02 V range practically stabilizes around 500 mA h/g after 20 cycles.     

The effect of copper concentration on structural,optical and dielectric properties of CuxZn1 − xS thin films

Cu_xZn_1 ? xS (x = 0, 0.25, 0.50, 0.75, 1) thin films were deposited on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature and ambient pressure. The copper concentration (x) effect on the structural, morphological and optical properties of Cu_xZn_1 ? xS thin films was investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all the films exhibit polycrystalline nature and are covered well with glass substrates. The crystalline and surface properties of the films improved with increasing copper concentration. The energy bandgap values were changed from 2.07 to 3.67 eV depending on the copper concentration. The refractive index (n), optical static and high frequency dielectric constants (ε_o, ε_∞) values were calculated by using the energy bandgap values as a function of the copper concentration.     

Oxygen-rich Ti1−xO2 pillar growth at a gold nanoparticle–TiO2 contact by O2 exposure

In-situ gas-injection transmission electron microscopy revealed that a pillar grew at the edge of the interface of a gold nanoparticle and a TiO₂ substrate during exposure to O₂ gas at 100 Pa. The pillar was found to have a titanium-deficient chemical composition of Ti_1 ? xO₂ (x > 0) by electron energy loss spectroscopy (EELS). The spectra showed a chemical shift of oxygen and titanium ions to have ionic states of Ti³⁺ and O^y? (y < 3/2). The formation of the Ti_1 ? xO₂ at the contact edge of gold–Ti_1 ? xO₂ interface is discussed from the perspective of an O₂ affinity, which plays an important role in CO oxidation process of supported gold particle.