Pseudogap and metal-insulator transitions in doped semiconductors

The electronic spectrum of a doped semiconductor described by the Anderson-Holstein impurity model and its conductivity derived from the Kubo linear response theory are calculated. Two characteristic temperatures depending on the doping level x are found in the phase diagram, T _PG and T _λ(x). The pseudogap that opens in the single-particle spectrum at low doping levels and temperatures closes at the lower one, T _PG. The pseudogap state of an insulator is attributed to spin fluctuations in a doped compound. At the higher characteristic temperature T _λ(x),, spin fluctuations vanish and the doped compound becomes a paramagnetic poor metal. Two distinct metal-insulator crossovers between semiconductor-like and metallic temperature dependence of resistivity are found. An insulator-to-poor-metal transition occurs at T ^*(x) ≈ T _λ(x). A poor-metal-to-insulator transition at a lower temperature is attributed to the temperature dependence of density of states in the pseudogap. It is shown that both transitions are observed in La_2?x Sr_xCUO₄.     

Superconductivity in impurity bands

We present a theory of superconductivity in doped insulators. In the magnetic metal state of the compound we obtain the self-consistency equations for the superconducting state in the spin-dependent impurity bands of both extended and localized states in the initial insulator gap. A BCS-type triplet pairing field is considered. We show that the superconducting gap in which single-electron extended states do not exist is overlapped by the distribution of the localized states. The formation of a latent superconducting gap is discussed in connection with the unusual properties of high-T _c compounds. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 5, 419–424 (10 March 1997) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Y掺杂SrTiO3晶体材料的电子结构计算

采用基于第一性原理的密度泛函理论平面波超软赝势法, 研究了Y掺杂SrTiO₃体系的空间结构和电子结构性质, 得到了优化后体系的结构参数, 掺杂形成能, 能带结构和电子态密度. 对比掺杂浓度为0125, 025, 033时,Sr_1-xY_xTiO₃和SrTi_1-xY_xO₃的掺杂形成能,发现Y替代Sr能形成更稳定的结构. 对Sr_1-xY_xTiO₃（x=0, 0125, 025, 033） 的结构进行了优化,结果表明Y替代Sr后, 随着掺杂浓度增大, 体系的晶格常数逐渐减小, 稳定性逐渐增强. 对不同掺杂浓度的Sr_1-xY_xTiO₃能带结构的计算结果表明：纯净的SrTiO₃是绝缘体, 价带顶在R点, 导带底在Γ点, 费米能级处于价带顶; 掺杂Y后, 费米能级进入到导带底中, 体系呈金属性;掺杂浓度越大,费米能级进入导带的位置越深,禁带宽度也近似变宽. 关键词： 3')" href="#">SrTiO₃ 电子结构 掺杂 VASP     

Coexistence of magnetism and superconductivity in the hole doped FeAs-based superconducting compound

The magnetic and superconducting properties of the Sm-doped FeAs-based superconducting compound were investigated under wide ranges of temperature and magnetic field. After the systematical magnetic ion substitution, the superconducting transition temperature decreases with increasing magnetic moment. The hysteresis loop of the La_0.87?xSm_xSr_0.13FeAsO sample shows a superconducting hysteresis and a paramagnetic background signal. The paramagnetic signal is mainly attributed to the Sm moments. The experiment demonstrates that the coexistence of magnetism and superconductivity in the hole doped FeAs-based superconducting compounds is possible. Unlike the electron doped FeAs-based superconducting compounds SmFeAsOF, the hole doped superconductivity is degraded by the substitution of La by Sm. The hole-doped and electron-doped sides are not symmetric.     

FLAPW-GGA calculations of the influence of Mn, Fe, and Co impurities on the electronic and magnetic properties of layered oxychalcogenides LaCuSO and LaCuSeO

The electronic and magnetic properties of oxychalcogenides LaCuSO and LaCuSeO with a layered ZrCuSiAs-type structure doped with impurity atoms M = Mn, Fe, and Co have been predicted using the first-principles FLAPW-GGA method. It has been shown that a partial substitution of 3d ^{n < 9} metal atoms for copper atoms in the structure of the initial matrix leads to the transition of the oxychalcogenides (nonmagnetic semiconductors) to the state of a magnetic half-metal with 100% spin polarization of near-Fermi electrons. In this case, the magnetic and conducting properties of the LaCu_{1 ? x} M _x S(Se)O systems are determined by the states of the [Cu₂(S,Se)₂] blocks with magnetic impurities separated by nonmagnetic semiconducting [La₂O₂] blocks.     

Gd3+ electron spin resonance spectroscopy on LaO1 ? x F x FeAs superconductors

We report an electron spin resonance (ESR) spectroscopy study on polycrystalline samples of the LaO_{1 ? x} F _x FeAs (x = 0 and 0.1) compound with small levels of Gd doping (2% and 5%). The Gd ESR signal is found to be sensitive to the magnetic phase transition from the paramagnetic to the spin density wave (SDW) state occurring in the parent LaO_{1 ? x} F _x FeAs compounds at T _SDW ?? 130 K. Interestingly, the analysis of the low-temperature ESR spectra of the c-axis oriented Gd_{1 ? y} La _y OFeAs samples gives evidence for the magnetically nonequivalent Gd sites and also for sites having a different local charge environment. The analysis of the temperature dependence of the ESR linewidths gives evidence for a coupling of the localized 4f electrons of Gd to the conduction electrons in the FeAs layers. The ESR data reveal that the fluorine substitution, which provides electron doping, suppresses the SDW order and enhances the density of states in the electronic bands stemming from the xz and yz orbital states of Fe to which the 4f electrons are most strongly coupled.     

First-principles study on the structural and electronic properties of AlNCx nanosheet

The structural and electronic properties of a hydrogen terminated hexagonally AlN nanoribbon with 6 zigzag Al-N chains across the ribbon width (6-ZAlNNR) and the hexagonally bonded hetero-sheets AlNC_x (x=2,4,6) consisting of AlN and graphite strips with zigzag shaped borders have been investigated systemically by using the first-principles. The results show that in 6-ZAlNNR, the states of the lowest unoccupied conduction band (LUCB) and the highest occupied valence band (HOVB) at zone boundary Z are edge states whose charges are localized at edge Al and N atoms, respectively. Introducing the graphite strip C_x and increasing its width lead to the LUCB and HOVB getting closer with each other especially in flat dispersion region around the zone boundary J_y, thus decreasing in the energy gap of the hetero-sheets AlNC₂, AlNC₄ and AlNC₆ successively. Similar to the edge states existing in zigzag edged AlNNR, the flat dispersion border states also exist in the zigzag borders of hexagonally networked hetero-sheets AlNC_x. Unlike the edge states whose charges are localized at one of the edge atoms, the border states are localized at two atoms of the borders with either bonding or antibonding character.     

Electronic structures,magnetic properties and band alignments of 3d transition metal atoms doped monolayer MoS2

Utilizing first-principles calculations, the electronic structures, magnetic properties and band alignments of monolayer MoS₂ doped by 3d transition metal atoms have been investigated. It is found that in V, Cr, Mn, Fe-doped monolayers, the nearest neighboring S atoms (S_NN) are antiferromagnetically polarized with the doped atoms. While in Co, Ni, Cu, Zn-doped systems, the S_NN are ferromagnetically coupled with the doped atoms. Moreover, the nearest neighboring Mo atoms also demonstrate spin polarization. Compared with pristine monolayer MoS₂, little change is found for the band edges' positions in the doped systems. The Fermi level is located in the spin-polarized impurity bands, implying a half-metallic state. These results provide fundamental insights for doped monolayer MoS₂ applying in spintronic, optoelectronic and electronic devices.     

Electronic structure reconstruction of CaFe2As2 in the spin density wave state

The electronic structure of CaFe₂As₂, a parent compound of iron-based superconductors, is studied with high-resolution angle-resolved photoemission spectroscopy. The electronic structure of CaFe₂As₂ in the paramagnetic state is consistent with that of density-functional theory calculations. We show that the electronic structure of this compound is significantly reconstructed when entering the spin density wave state. We could resolve two hole-like pockets and four electron-like pockets around the (0, 0) point, and one electron-like pocket surrounded with a pair of electron- and hole-like pockets around the (π, π) point in the spin density wave state. Therefore, the complicated Fermi surface topology and electronic structure near Fermi surface of CaFe₂As₂ illustrate that there exists unconventional electronic reconstruction in the spin density wave state, which cannot be explained by the band folding and Fermi surface nesting pictures.     

First-principle study on the electronic and optical properties of Mn-doped SnO2

Using the full-potential linearized augmented plane wave method (FP-LAPW), we have investigated the electronic and optical properties of Sn_1−xMn_xO₂ (x=0, 0.0625, 0.125, 0.1875, 0.25). The doped Mn results in reduction of the band gap, which can be attributed to a series of impurity bands at the bottom of the conduction band caused by the strong hybridization between Mn 3d and O 2p. The results also show that the Mn-doped systems tend to convert into p-type semiconductor with direct band gaps. With the increase of Mn concentration, both the imaginary part of dielectric function and the absorption spectrum show red-shift corresponding to the change of band gaps.     

Kondo-insulating state in CeNi1−xRhxSn as a function of carrier number

Our systematic study has shown that the gap in doped CeNiSn Kondo insulator is very sensitive to the degree of hybridization V between the f-electron and conduction electron states. In the system CeNi_1−xRh_xSn, the carrier concentration diminishes upon Rh substitution for Ni. The transition from Kondo-insulator region to a metallic region is discussed as a function of variable valence electron number induced by substitution of Rh for Ni and of the accompanying effect of the change hybridization energy V.     

Microwave properties of Nd0.5Sr0.5MnO3: a key role of the (x2−y2)-orbital effects

Transmittance of the colossal magnetoresistive compound Nd_0.5Sr_0.5MnO₃ showing metal–insulator phase transition has been studied by means of the submm- and mm-wavelength band spectroscopy. An unusually high transparency of the material provided direct evidence for the significant suppression of the coherent Drude-weight in the ferromagnetic metallic state. Melting of the A-type antiferromagnetic states has been found to be responsible for a considerable increase in the microwave transmission, which was observed at the transition from the insulating to the metallic phase induced by magnetic field or temperature. This investigation confirmed a dominant role of the (x²−y²)-orbital degree of freedom in the low-energy optical properties of Nd_0.5Sr_0.5MnO₃ and other doped manganites with planar (x²−y²)-orbital order, as predicted theoretically. The results are discussed in terms of the orbital-liquid concept.     

Electronic structural properties and formation energy of Sn1−xPbxO2 solid solutions electrode

First-principles calculations based on density functional theory within the generalized gradient approximation have been performed for the Sn_1−xPb_xO₂ solid solution. The doped formation energies and electronic structures are also analyzed. Results show that the Sn_0.9375Pb_0.0625O₂ solid solution has the highest stability because of its minimum formation energy value of 0.04589 eV at a doping ratio of 0.0625. The SnO₂ lattice constants expand in a distorted rutile structure after Pb doping. The band structure and density of states calculations indicate that the band gap of SnO₂ narrowed due to the presence of the Pb impurity energy levels in the forbidden band, namely, Pb 6s energy band overlaps with the conductivity band in the F–Q direction. In addition, the number of electrons filled at the bottom of the conduction band increases from 0.13 to 3.96 after doping, resulting in the strengthening of the conductivity of the solid solution after doping of plumbum. The results provide a theoretical basis for the development and application of the Sn_1−xPb_xO₂ solid solution electrode.     

A full potential all-electron calculation on electronic structure of NiO

We perform a first principle calculation on NiO system, a prototypical correlated electronic system due to partial filled 3d electronic shell, using various density functional theory (DFT) and hybrid functional methods inclusion of spin polarization (SP), on-site Coulomb repulsion U and spin–orbit coupling (SOC) effects. It is shown that localized spin density approximation (LSDA) plus U (LSDA?+?U) correctly reproduce experimental lattice parameter, while spin polarization generalized gradient approximation (SP?+?GGA?+?U) obviously overestimates lattice parameter. LSDA?+?U/SP?+?GGA?+?U band gaps and magnetic moments are in agreement with experimental data, and correctly predict NiO to be an insulator. NiO undergoes a Mott–Hubbard metal–insulator transition (MIT) by addition of Coulomb interaction U. Our LSDA?+?SOC calculation shows that SOC further splitting of Ni d e_g and t_2g orbitals into d_z2, d_xy, d_x2y2 and d_xz?+?d_yz orbitals, and SP nearly cancels out SOC effect, giving rise to symmetry of density of states (DOS) for spin-up and spin-down states, hence appearance of zero net magnetic moment. For LSDA?+?U?+?SOC calculation, combination effect of SP, U and SOC results in non-occupying of spin-up conduction band and a negligible density of states for spin-down states.     

CPA density of states and conductivity in a double-exchange system containing impurities

We study density of states and conductivity of the doped double-exchange system, treating interaction of charge carriers both with the localized spins and with the impurities in the coherent potential approximation. It is shown that under appropriate conditions there is a gap between the conduction band and the impurity band in paramagnetic phase, while the density of states is gapless in ferromagnetic phase. This can explain metal-insulator transition frequently observed in manganites and magnetic semiconductors. Activated conductivity in the insulator phase is numerically calculated. Received 13 June 2000 and Received in final form 5 January 2001     

Sn1−xBixO2 and Sn1−xTaxO2 (0≤x≤0.75): A first-principles study

The structural, elastic, electronic and optical (x=0) properties of doped Sn_1−xBi_xO₂ and Sn_1−xTa_xO₂ (0≤x≤0.75) are studied using the first-principles pseudopotential plane-wave method within the local density approximation. The independent elastic constants C_ij and other elastic parameters of these compounds have been calculated for the first time. The mechanical stability of the compounds with different doping concentrations has also been studied. The electronic band structure and density of states are calculated and the effect of doping on these properties is also analyzed. It is seen that the band gap of the undoped compound narrowed with dopant concentration, which disappeared for x=0.26 for Bi doping and 0.36 for Ta doping. The materials thus become conductive oxides through the change in the electronic properties of the compound for x≤0.75, which may be useful for potential application. The calculated optical properties, e.g. dielectric function, refractive index, absorption spectrum, loss-function, reflectivity and conductivity of the undoped SnO₂ in two polarization directions are compared with both previous calculations and measurements.     

Electronic and magnetic states in metallic compound—II: Electron transport and magnetic susceptibility in NiAl and FeAl

Electron transport and magnetic properties were investigated in NiAl and FeAl alloys in the vicinity of exact stoichiometry. The results as well as those of other workers were compared with recent augmented-plane-wave band calculations for NiAl, and semiquantitative agreement was found. With respect to impurity states in NiAl, it was concluded that transport anomalies, though definitely magnetic in origin, were not due to localized-magnetic moments on excess Ni atoms on Al sites. It was suggested that the anomalies may be due to subtle structural defects or such defects in combination with one of several intrinsic (non-impurity or defect) mechanisms. In the FeAl alloys, it was concluded that excess Fe atoms on Al sites (Fe_x atoms) carry a moment in the paramagnetic state of 7·8 μ_B. Negative magneto-resistance but no resistance minima effects were observed. The data, similar in several respects to those for dilute Rh(Fe) alloys, were interpreted in terms of antiferromagnetically coupled Fe_x atoms which lead to magnetic transitions of a spin-glass or mictomagnetic nature, that is, having no long-range order.     

The electronic and optical properties of Cu doped CdI2

Based on the density functional pseudopotential method, the electronic structures and the optical properties of CdI₂ doped with Cu are investigated in detail. The calculation results indicate that the defect of Cu(Cd) exists steadily with a certain solubility. For the Cu doped CdI₂, the new highly localized impurity bands induced by Cu 3d states lie just across the Fermi energy at the top of the valence band. The doping of Cu induces reduction of band gap of CdI₂; red shifts are revealed in both the imaginary part of dielectric function and the absorption spectra corresponding to the change in band gaps. Moreover, the study of the reflection spectrum and the loss function shows that the doped Cu is responsible for the increased reflection peak intensity and the red shift of the plasma resonant frequency of CdI₂.     

Five-fold way to new high <Emphasis Type="Italic">T</Emphasis><Subscript>c</Subscript> superconductors

Discovery of high T _c superconductivity in La_2?x Ba _x CuO₄ by Bednorz and Muller in 1986 was a breakthrough in the 75-year long search for new superconductors. Since then new high T _c superconductors, not involving copper, have also been discovered. Superconductivity in cuprates also inspired resonating valence bond (RVB) mechanism of superconductivity. In turn, RVB theory provided a new hope for finding new superconductors through a novel electronic mechanism. This article first reviews an electron correlation-based RVB mechanism and our own application of these ideas to some new noncuprate superconducting families. In the process we abstract, using available phenomenology and RVB theory, that there are five directions to search for new high T _c superconductors. We call them five-fold way. As the paths are reasonably exclusive and well-defined, they provide more guided opportunities, than before, for discovering new superconductors. The five-fold ways are (i) copper route, (ii) pressure route, (iii) diamond route, (iv) graphene route and (v) double RVB route. Copper route is the doped spin-½ Mott insulator route. In this route one synthesizes new spin-½ Mott insulators and dopes them chemically. In pressure route, doping is not external, but internal, a (chemical or external) pressure-induced self-doping suggested by organic ET-salts. In the diamond route we are inspired by superconductivity in boron-doped diamond and our theory. Here one creates impurity band Mott insulators in a band insulator template that enables superconductivity. Graphene route follows from our recent suggestion of superconductivity in doped graphene, a two-dimensional broadband metal with moderate electron correlations, compared to cuprates. Double RVB route follows from our recent theory of doped spin-1 Mott insulator for superconductivity in iron pnictide family.