注硅半绝缘GaAs的深能级

用深能级瞬态谱(DLTS)详细研究了硅离子注入Liquid-encapsulated Czochralski(缩写为LEC)半绝缘GaAs的深中心。结果表明,在注硅并经高温退火的有源区中观测到4个多子(电子)陷阱,E₀₁,E₀₂,E₀₃和E₀₄。它们的电子表观激活能分别为0.298,0.341,0.555和0.821eV。其中E₀₄与EL2有关,但不是EL2缺陷。E₀₄的电子 关键词：     

电子辐照硅层中缺陷能级的研究

用12MeV电子辐照硅p⁺n结,在硅中除引入氧空位E₁(E_c-0.19eV),双空位E₂(E_c-0.24eV)和E₄(E_c-0.44eV)外,还引入缺陷E₃(E_c-0.37eV)。用DLTS方法和反向恢复时间测量研究了这些能级的退火行为,可以看到,E₃的退火温度最高(≈520℃)。由退火特 关键词：     

等离子体氧轰击硅生成缺陷的研究

本文对等离子体氧轰击硅产生的缺陷进行了研究。发现等离子体氧轰击在硅中引入两个缺陷E₁(E_c—0.46eV)及E₂(E_c—0.04eV)。测量了缺陷的光电离截面谱,分析表明,缺陷E₂的电子声子相互作用很强,其Frank-Condon移动达0.76eV,缺陷E₁的电子声子相互作用较小,其Frank-Condon移动为0.04eV。由实验结果得到与缺陷E₁、E₂相耦合的声子模分别为hω_p⁽¹⁾=28meV,hω_p⁽²⁾=20meV。 关键词：     

高温退火后非掺杂磷化铟材料的电子辐照缺陷

对不同气氛下高温退火非掺杂磷化铟(InP)材料的电子辐照缺陷进行了研究. 除铁受主外，磷化铁(FeP₂)气氛下退火后的InP中辐照前没有深能级缺陷，而辐照后样品的热激电流谱(TSC)中出现了5个较为明显的缺陷峰，对应的激活能分别为0.23 eV, 0.26 eV, 0.31 eV, 0.37 eV和0.46 eV. 磷(P)气氛下退火后InP中的热生缺陷较多，电子辐照后形成的缺陷具有复合体特征. 与辐照前相比，辐照后样品的载流子浓度和迁移率产生显著变化. 在同样的条件下，经FeP₂ 气氛下高温退火后的InP样品的辐照缺陷恢复速度较快. 根据这些现象分析了缺陷的属性、快速恢复机理和缺陷对材料电学性质的影响. 关键词： 磷化铟 电子辐照 缺陷     

注氮GaAs中的深能级及其对自由载流子的补偿

详细研究了注氮n型GaAs中深的和浅的杂质缺陷的电学性质。深能级瞬态谱(DLTS)技术测量表明,能量为140keV和剂量为1×10¹³cm^-2的氮离子注入并经800℃退火30min的GaAs中存在四个电子陷阱,E₁(0.111),E₂(0.234),E₃(0.415),E₄(0.669)和一个空穴陷阱H(0.545),而在能量为20keV和剂量为5×10^{14关键词：}     

n型气相外延GaAs层中中子辐照感生缺陷的研究

本文研究了1MeV中子辐照在气相外延n-GaAs有源层中深能级缺陷的特性和热退火性能。结果表明,大多数感生缺陷是与两个以上原子位移有关的缺陷。另外,当H₁能级通火时,出现了一个新的缺陷能级E₅(E_c-0.73eV)。研究表明GaAs MESFET参数的变化主要是由于载流子去除。 关键词：     

磁场对石墨烯中弱耦合极化子性质的影响

研究了磁场作用下石墨烯中电子与表面光学声子弱耦合情况下的极化子的性质。采用线性组合算符和Pekar变分法分别推导出了石墨烯中弱耦合极化子的基态能量E₀、第一激发态能量E₁和跃迁频率ω随磁场强度B和德拜截止波数k_d之间的变化关系。数值计算结果表明，极化子的基态能量E₀随磁场强度B变化的曲线（k_d一定时）和E₀随k_d的变化曲线（B一定时）均会分裂成对称的两条，并且当B一定时E₀的绝对值随k_d的增加而增加。在k_d一定时，极化子的第一激发态能量E₁和跃迁频率ω均为磁场B的增函数；在B一定时，E₁和ω均随k_d的增加而增大。     

二元掺杂镧锰氧化物La-Ca-Ba-Mn-O的庞磁电阻特性

用固相反应法制备了二元掺杂的镧锰氧化物La_0.67(Ca_0.6Ba_0.4)_0.33MnO_z(LCBMO)立方多晶体材料,研究了其磁特性和庞磁电阻特性,并与用类似方法制备的一元掺杂的La_0.67Ca_0.33MnO_z(LCMO)及La_0.67Ba_0.33MnO_z(LBMO)的庞磁电阻特性进行了比较.研究表明,LCBMO的居里温度T_C为312K,介于LCMO和LBMO的T_C（分别为280,362K）之间,其金属-半导体转变温度T_p和μ₀H=0.6T下的磁电阻（MR）峰值温度T_m分别为306,298K,接近于其T_C,也介于LCMO和LBMO的T_p和T_m之间.μ₀H=0.6T下,在各自的T_m处,LCMO,LCBMO和LBMO的庞磁电阻值分别达到41%,24.7%和8%,但在室温（300K）处,LCBMO的MR值仍达到20％,远大于LCMO和LBMO的值（分别为2.0％和2.4％）.研究还发现,在温度远低于T_m时,LCMO仍保持一定的磁电阻效应,而LCBMO和LBMO的磁电阻温度降低而增加,这些低温磁电阻特性与材料的结构特征（如晶界和致密度）有关. 关键词：     

浅杂质注入LEC半绝缘GaAs γ射线辐照缺陷

用深能级瞬态谱（ＤＬＴＳ）和恒温电容瞬态等技术研究了浅杂质注入ＬＥＣ半绝缘ＧａＡｓ的γ射线辐照缺陷。在Ｂｅ－Ｓｉ共注的ＬＥＣ半绝缘ＧａＡｓ中，γ射线辐照引入一电子陷阶Ｅ₂，并且大大增强了原有的Ｅ₀₁（０．２９８）和Ｅ₀₂（０．３４１）等缺陷，同时明显地瓦解了原有的少子陷阱Ｈ₀₃。在单纯注Ｓｉ的ＬＥＣ半绝缘ＧａＡｓ中，γ射线辐阳引进了Ｅ＇₀₁（０．２１６），Ｅ＇₀₂（０．３４１），Ｅ＇₂，Ｅ＇₄和Ｅ＇₅（０．６０８）等缺陷。其中Ｅ₀₁和Ｅ＇₀₁是新发现的和γ辐照有关的ＧａＡｓ缺陷。和低阻衬底同质外延ＧａＡｓ相比，Ｂｅ－Ｓｉ共注ＬＥＣ半绝缘ＧａＡｓ具有较低的γ射线辐照缺陷引入率，与此相反，单纯注Ｓｉ的ＬＥＣ半绝缘ＧａＡｓ具有较高的γ射线辐照缺陷的引入率。 关键词：     

快中子辐照直拉硅中受主和施主的研究

通过傅里叶红外光谱、正电子湮没寿命谱和Hall技术研究了高剂量快中子辐照直拉硅的辐照 缺陷、电阻率、载流子迁移率、载流子浓度随退火温度的变化.经快中子辐照，直拉硅样品 的导电类型由n型转变为p型.在450和600℃热处理出现两种受主中心，分别由V2_{2O22，V22O，VO22，V-O-V及V44型缺 陷引起，这些缺陷态的出现使得样品中空穴浓度迅速增加；大于650℃热处理这些受主态 缺陷迅速消失， 关键词： 快中子辐照 空位型缺陷 受主 施主}     

Effect of alpha-particle irradiation on the electrical properties of n-type Ge

Deep-level transient spectroscopy was used to investigate the effect of alpha particle irradiation on the electrical properties of n-type Ge. The samples were irradiated with alpha particles at room temperature using an americium-241 (Am-241) radionuclide source. The main defects introduced were found to be electron traps with energy levels at E_C−0.38, E_C−0.21, E_C−0.20, E_C−0.15, and E_C−0.10 eV, respectively. The main defects in alpha particle irradiation are similar to those introduced by MeV electron irradiation, where the main defect is the E-center. A quadratic increase in concentration as a function of dose is observed.     

3 MeV electron irradiation-induced defects in CuInSe2 thin films

3 MeV electron irradiation induced-defects in CuInSe₂ (CIS) thin films have been investigated. Both of the carrier concentration and Hall mobility were decreased as the electron fluence exceeded 1×10¹⁷ cm⁻². The carrier removal rate was estimated to be about 1 cm⁻¹. To evaluate electron irradiation-induced defect, the electrical properties of CIS thin films before and after irradiation were investigated between 80 and 300 K. From the temperature dependence of the carrier concentration in non-irradiated thin films, we obtained N_D=1.8×10¹⁷ cm⁻³, N_A=1.7×10¹⁶ cm⁻³ and E_D=18 meV from the SALS fitting to the experimental data on the basis of the charge balance equation. After irradiation, a new defect level was formed, and N_T0=1.4×10¹⁷ cm⁻³ and E_T=54 meV were also obtained from the same procedure. From the temperature dependence of Hall mobility, the ionized impurity density was discussed before and after the irradiation.     

Brillouin and raman scattering studies of the melting transition in salol

Brillouin and Raman scattering studies of salol from room temperature to within 5 mK of the melting transition at T_m = 40.97°C are reported. Changes in the Brillouin shifts and linewidths were accurately determined by nonlinear least-squares fitting and deconvolution. A marked increase in the deconvoluted Brillouin linewidth (~400%) and a gradual softening (~20%) of the transverse acoustic modes were observed very close to T_m. The increase of the Brillouin linewidths was analyzed by a simple dislocation model assuming the hypersonic attenuation to be proportional to the concentration of thermally generated defects near T_m. The defect formation energy E_D(T) was computed from the temperature-dependent linewidth data, and was found to decrease significantly (~60%) near T_m, suggesting a cooperative effect producing a catastrophic growth of defects which brings about melting by destroying the long range order of the crystal. The conclusion that melting is mediated by a sudden growth of defect concentration near T_m was further strengthened by Raman scattering experiments in which 13 new Raman modes appeared close to T_m. These new modes are believed to be defect activated through breaking of the local symmetry of the crystal. A slight softening of the Raman modes (~5%) was observed close to the melting point.     

Influence of the defect state of samples on the luminescence spectra of CdS single crystals irradiated by electrons

The photoluminescence spectra of CdS single crystals irradiated by electrons (E = 1.2 MeV, Φ = 2×10¹⁷ cm^?2) are investigated in the visible and near-infrared regions of electromagnetic radiation. Some samples of the CdS single crystals are preliminarily irradiated by neutrons (E = 2 MeV, Φ = 2 × 10¹⁸ cm^?2) with the aim of increasing the concentration of initial structural defects. From analyzing the peak intensities of photoluminescence in the irradiated single crystals at the wavelengths λ_m = 0.720, 1.030, and 0.605 μm, it is concluded that the CdS samples with a low concentration of structural defects in the initial state possess the highest resistance to electron radiation. It is assumed that the observed transformation of the photoluminescence spectra of the imperfect CdS single crystals subjected to electron irradiation is determined by either the mechanisms of subthreshold defect formation or the transformation of the defect complexes in elastic and electric fields near the large structural damages of the crystal lattice.     

Effects of temperature and impurities on electron radiation damage in the high voltage microscope

This paper describes the results of irradiation of specimens of copper and copper containing up to 2 at % beryllium in the high-voltage electron microscope. The results of irradiation at temperatures ranging from 20–500 K are described and discussed in the light of recently proposed theories of defect nucleation. Although the results are difficult to interpret because of the many diverse factors which influence the nucleation and growth of the damage it was found that the values for the volume density of defects were in general agreement with the predictions, if the effects of the foil surfaces were taken into account.

The corrected densities were used to derive values for the activation energy for motion of an interstitial in copper, E_m , and the binding energy between an interstitial and a beryllium atom, E_b . The results obtained were 0.12±0.03 eV for E_m and 0.29±0.07 eV for E_b .     

Microstructural analysis of neutron irradiated titanium and rhenium

The defect structure in α-titanium and rhenium irradiated with neutrons at 0.4T _m (T _m = absolute melting temperature) has been analyzed using transmission electron microscopy. In rhenium, the vacancies agglomerate into voids whereas in titanium, vacancy dislocation loops lying on the prism planes are the only vacancy type defects observed. In both metals, dislocation segments and network fragments are the main evidence of interstitial type defects. The presence of dislocation loops rather than voids in titanium irradiated at this temperature is an anamalous result when compared to results on other similarly irradiated pure metals. Possible explanations for the preferential formation of loops rather than voids in the titanium are discussed.     

Thermal behavior of gamma-irradiated low-density polyethylene/paraffin wax blend

The thermal properties of low-density polyethylene (LDPE)/paraffin wax blends were studied using differential scanning calorimetry (DSC), thermogravimetric analysis (TGA) and melt flow index (MFI). Blends of LDPE/wax in ratios of 100/0, 98/2, 96/4, 94/6, 92/8, 90/10 and 85/15 (w/w) were prepared by melt-mixing at the temperature of 150°C. It was found that increasing the wax content more than 15% leads to phase separation. DSC results showed that for all blends both the melting temperature (T_m) and the melting enthalpy (ΔH_m) decrease linearly with an increase in wax content. TGA analysis showed that the thermal stability of all blends decreases linearly with increasing wax content. No clear correlation was observed between the melting point and thermal stability. Horowitz and Metzger method was used to determine the thermal activation energy (E_a). MFI increased exponentially by increasing the wax content. The effect of gamma irradiation on the thermal behavior of the blends was also investigated at different gamma irradiation doses. Significant correlations were found between the thermal parameters (T_m, ΔH_m, T₅%, E_a and MFI) and the amount of wax content and gamma irradiation.     

Interactions of gamma rays with undoped and Mn-doped sodium phosphate glasses

Ultraviolet and visible spectroscopic measurements were used to investigate prepared undoped and Mn-doped sodium phosphate glasses before and after successive gamma irradiation. The effects of both glass composition and MnO₂ content on the generation of radiation-induced defects were investigated. Undoped sodium phosphate glass shows strong UV absorption, which is attributed to the presence of trace iron impurities present in the raw materials. Mn-doped glasses reveal an additional visible broad band centered at about 500 nm due to Mn³⁺, which has recently been related to the ⁵E_g →⁵T_2g transition. The radiation-induced bands are correlated with the generation of liberated electron–hole pairs during the process of gamma irradiation and the possibility of photochemical reactions especially with trace iron impurities and manganese ions. The intensity and the position of the induced bands are observed to depend on the type and composition of glass, concentration of the dopant and also on the irradiation dose. Manganese ions when present in relatively higher content have been found to show a shielding behavior towards the effects of progressive gamma irradiation causing a retardation of the growth of the induced defects. Infrared and Raman spectra of the undoped and Mn-doped glasses were measured to investigate the structural phosphate groups present and the effect of MnO₂ on the network structure. An ESR investigation was carried out to confirm the state of manganese ions in the prepared sodium phosphate glasses.     

Electron irradiation effects in doped high temperature superconductors YBa2Cu3? x M x O y (M = Fe, Ni; x=0; x =0:01)

The influence of irradiation by electrons with an energy of 8 MeV, at dose intervals between 10¹³ and 2×10¹⁸el/cm², on the properties of impurity doped, high-temperature superconductor YBa₂Cu_3−x M _x O _y (M = Fe, Ni; x=0; x=0:01) ceramics has been studied. It has been established that, as the irradiation dose is increased, the onset temperature of the transition to the superconducting state (T _c ^on ), and the intergranular weak link coupling temperature between granules (T _m ^J ), exhibit an oscillation around their initial values of approximately about 1–1.5 K. This oscillation indicates that the process of radiation defect formation in HTSC occurs in multiple stages. It was also found that the critical current (J _c )decreases with an increase of the irradiation dose, and exhibits a local minimum at a dose of 8×10¹⁶el/cm²coinciding with minima for T _c ^on and T _m ^J at this dose. It was found that the introduction of Fe atoms to the ceramic decreases T _m ^J , while introducing Ni atoms decreases both T _c ^on and T _m ^J ; it is suggested that this is a result of Ni substitution of Cu both in Cu2 plane sites and Cu1 chain sites. The introduction of Ni causes a large change in the intergranular critical current density, J _c . A critical irradiation dose is obtained (2×10¹⁸)after which all HTSC parameters strongly decrease, i. e. the superconductivity of HTSC is destroyed.