Oxidation temperature dependent properties of MgO thin film on alumina

The magnesium oxide thin films were prepared by thermal oxidation (in air) of vacuum evaporated magnesium thin film on alumina. It was found that oxidation temperature (623 K, 675 K and 723 K) and thickness (103 nm and 546 nm) dependent effects were prominently manifested in the surface morphology. Electrical and microwave properties (8-12 GHz) of the MgO thin films were also carried out. X-ray diffraction showed orientation along (2 0 0) and (2 2 0) directions. Flowerlike morphology was observed from SEM and flake like morphology for films of higher thickness oxidized at higher temperatures. The magnesium oxide thin film showed NTC behavior. Microwave transmittance was found to increase with increase in oxidation temperature but was lower than alumina. Frequency and oxidation temperature dependent microwave permittivity was obtained. The microwave dielectric constant varied in the range 8.3-15.3.     

Modeling and experimental investigation of methylcyclohexane ignition in a rapid compression machine

A new chemical kinetic reaction mechanism has been developed for the oxidation of methylcyclohexane (MCH), combining a new low temperature mechanism with a recently developed high temperature mechanism. Predictions from this kinetic model are compared with new experimentally measured ignition delay times from a rapid compression machine. Computed results were found to be particularly sensitive to isomerization rates of methylcyclohexylperoxy radicals. Three different methods were used to estimate rate constants for these isomerization reactions. Rate constants based on comparable alkylperoxy radical isomerizations corrected for the differences in the structure of MCH and the respective alkane, predicted ignition delay times in very poor agreement with the experimental results. The most significant drawback was the complete absence of a region of negative temperature coefficient (NTC) in the model results using this method, although a prominent NTC region was observed experimentally. Alternative estimates of the isomerization reaction rate constants, based on the results from previous experimental studies of low temperature cyclohexane oxidation, provided much better agreement with the present experiments, including the pronounced NTC behavior. The most important feature of the resulting methylcyclohexylperoxy radical isomerization reaction analysis was found to be the relative rates of isomerizations that proceed through 5-, 6-, and 7-membered transition state ring structures and their different impacts on the chain branching behavior of the overall mechanism. Theoretical implications of these results are discussed, with particular attention paid to how intramolecular H atom transfer reactions are influenced by the differences between linear alkane and cycloalkane structures.     

Influence of a controlled oxidation at moderate temperatures on the surface chemistry of nitinol wire

Commercial nitinol wire is oxidised at 480-530 °C/10 min in air. Surface morphology and chemistry is studied in detail using scanning electron microscopy, energy dispersive spectrometry, X-ray diffraction, Raman spectrometry and X-ray photoelectron spectroscopy. It is found that the main oxidation product at both temperatures is rutile containing a few at.% Ni. Beneath the rutile layer, there are titanium sub-oxides, showing characteristic maxima in depth profiles. Nickel in an oxidised state is present on the surface, whereas in a sub-surface region of scales, there is only metallic nickel. Thickness of the total oxide layers is 70 and 140 nm after oxidation at 480 and 530 °C, respectively. The preferential oxidation of titanium causes the formation of a Ni-enriched and Ti-depleted zone, suggesting the presence of Ni₃Ti phase. XRD reveals that the presence of cubic B2 NiTi phase in the base alloy is not affected by oxidation at 480-530 °C/10 min.     

环己烷在射流搅拌反应器中的低温氧化动力学初探:实验和动力学模型研究

We report the investigation on the low-temperature oxidation of cyclohexane in a jet-stirred reactor over 500-742 K. Synchrotron vacuum ultraviolet photoionization mass spectrometry (SVUV-PIMS) was used for identifying and quantifying the oxidation species. Major products, cyclic olefins, and oxygenated products including reactive hydroperoxides and high oxygen compounds were detected. Compared with n-alkanes, a narrow low-temperature window (~80 K) was observed in the low-temperature oxidation of cyclohexane. Besides, a kinetic model for cyclohexane oxidation was developed based on the CNRS model[Combust. Flame 160, 2319 (2013)], which can better capture the experimental results than previous models. Based on the modeling analysis, the 1,5-H shift dominates the crucial isomerization steps of the first and second O₂ addition products in the low-temperature chain branching process of cyclohexane. The negative temperature coefficient behavior of cyclohexane oxidation results from the reduced chain branching due to the competition from chain inhibition and propagation reactions, i.e. the reaction between cyclohexyl radical and O₂ and the decomposition of cyclohexylperoxy radical, both producing cyclohexene and HO₂ radical, as well as the decomposition of cyclohexylhydroperoxy radical producing hex-5-en-1-al and OH radical.     

Effect of substrate temperature on the surface and interface oxidation of NiTi thin films

NiTi shape memory alloy thin films are deposited on pure Cu substrate at substrate ambient temperatures of 300 °C and 450 °C. The surface and interface oxidation of NiTi thin films are characterized by X-ray photoelectron spectroscopy (XPS). After a subsequent annealing treatment the crystallization behavior of the films deposited on substrate at different temperatures is studied by X-ray diffraction (XRD). The effects of substrate temperature on the surface and interface oxidation of NiTi thin films are investigated. In the film surface this is an oxide layer composed of TiO₂. The Ni atom has not been detected on surface. In the film/substrate interface there is an oxide layer with a mixture Ti₂O₃ and NiO in the films deposited at substrate temperatures 300 °C and 450 °C. In the films deposited at ambient temperature, the interface layer contains Ti suboxides (TiO) and metallic Ni.     

The influence of substrate temperature on the morphology, optical and electrical properties of thermal-evaporated ZnTe Thin Films

The structural, morphological, optical and electrical properties of ZnTe films deposited by evaporation were investigated as a function of substrate temperature (at −123 and 27 °C) and post-deposition annealing temperature (at 200, 300 and 400 °C). It was determined that films deposited at both substrate temperatures were polycrystalline in nature with zinc-blende structure and a strong (1 1 1) texture. A small Te peak was detected in XRD spectra for both substrate temperatures, indicating that as-deposited ZnTe films were slightly rich in Te. Larger grains and a tighter grain size distribution were obtained with increased substrate temperature. Scanning electron microscopy (SEM) studies showed that the microstructures of the as-deposited films agreed well with the expectations from structure zone model. Post-deposition annealing induced further grain growth and tightened the grain size distribution. Annealing at 400 °C resulted in randomization in the texture of films deposited at both substrate temperatures. Optical spectroscopy results of the films indicated that the optical band gap value increased from 2.13 to 2.16 eV with increased substrate temperature. Increasing the annealing temperature sharpened the band-edge. Resistivity measurements showed that the resistivity of films deposited at substrate temperatures of −123 and 27 °C were 32 Ω cm, and 1.0 × 10⁴ Ω cm, respectively with corresponding carrier concentrations of 8.9 × 10¹⁵ cm⁻³ and 1.5 × 10¹⁴ cm⁻³. Annealing caused opposite changes in the film resistivity between the samples prepared at substrate temperatures of −123 and 27 °C.     

Porosity depth profiling of spin-coated silica thin films produced by different precursors sols

The structural evolution of nanoporous silica thin films was studied by Doppler broadening spectroscopy (DBS), 2-3 gamma ratio of positronium (3γ-PAS) and Fourier transform infrared spectroscopy (FT-IR). Four series of silica films with thickness in the 300-600 nm range were deposited by spin coating on Si substrate changing the content of sacrificial porogen in the sol precursors. The effect on the porosity of different amount of porogen and of the thermal treatments in the 400-900 °C temperature range have been highlighted. The evolution of the porosity is discussed considering the removal of porogen and of the silanol Si-OH groups by thermal treatments as pointed out by FT-IR. Pores with size from less than 1 nm up to sizes larger than 2.0 nm have been detected. In samples with maximum porogen load oPs escaping was observed indicating onset of connected porosity. At temperatures higher than 700 °C a decrease of the porosity due to a progressive pore collapsing was evidenced. A strong correlation was found between the shift of the Si-O-Si transversal optical (TO₃) mode in the FT-IR spectra and the pore size in the porous silica films as revealed by DBS and 3γ-PAS.     

Influence of CrN surface compound on the initial stages of high temperature oxidation of ferritic stainless steel

Segregation phenomena and formation of surface compounds on Fe-17Cr (ferritic stainless steel) were studied at temperatures up to 800 °C upon annealing and kinetically controlled oxidation by photoelectron spectroscopy and inelastic electron background analysis. The results revealed the formation of a chromium nitride surface compound during annealing in ultrahigh vacuum at temperatures exceeding 527 °C. Surface enrichment of P, As, and other trace elements became more prominent at higher temperatures approaching 800 °C. It was found that nitrogen was buried below the surface oxide layer during oxygen exposure, yet it had little effect on the rate of oxidation. However, the formation of CrN surface compound promoted the selective oxidation of Cr initially, which is of great importance in processing and application environments involving high temperature and controlled atmosphere conditions.     

Formation of atomically smooth SiO2/SiC interfaces at ∼120 °C by use of nitric acid oxidation method

Conventional thermal oxidation of SiC requires heating at ∼1100 °C. In the present study, we have developed a method of oxidizing SiC at low temperatures (i.e., ∼120 °C) to form relatively thick silicon dioxide (SiO₂) layers by use of nitric acid. When 4H-SiC(0 0 0 1) wafers are immersed in 40 wt% HNO₃ at the boiling temperature of 108 °C and the boiling is kept for 5 h after reaching the azeotropic point (i.e., 68 wt% HNO₃ at 121 °C), 8.1 nm thick SiO₂ layers are formed on the SiC substrates. High resolution transmission electron microscopy measurements show that the SiO₂/SiC interface is atomically flat and the SiO₂ layer is uniform without bunching. When SiC is immersed in an azeotropic mixture of HNO₃ with water from the first, the SiO₂ thickness is less than 0.3 nm. The metal-oxide-semiconductor (MOS) diodes with the SiO₂ layer formed by the nitric acid oxidation method possess a considerably low leakage current density.     

Bismuth zinc niobate (Bi1.5ZnNb1.5O7) ceramics derived from metallo-organic decomposition precursor solution

The preparation, microstructure development and dielectric properties of Bi_1.5ZnNb_1.5O₇ pyrochlore ceramics by metallo-organic decomposition (MOD) route are reported. Homogeneous precalcined ceramic powders of 13-36 nm crystallite size were obtained at temperatures ranging from 500 to 700 °C. The thermal decomposition/oxidation of the gelled precursor solution was chemically analyzed, TG/DTA, XRD, and SEM, led to the formation of a pure cubic pyrochlore phase with a stoichiometry close to Bi_1.5ZnNb_1.5O₇ which begins to form at 500 °C. The metallo-organic precursor synthesis method, where Bi, Zn and Nb ions are chelated to form metal complexes, allows the control of Bi/Zn/Nb stoichiometric ratio on a molecular scale leading to the rapid formation of bismuth zinc niobate (Bi_1.5ZnNb_1.5O₇) ceramic fine powders with pure pyrochlore structure. The powders were pressed into pellets and can be sintered at temperatures as low as 800-1000 °C. Fine crystalline ceramics with the grain size in the range of 200-500 nm have been obtained at the sintering temperature of 800 °C. The dielectric properties in high frequency to microwave range were measured and discussed.     

The influence of the sintering temperature on the structural and the magnetic properties of doped manganites: La0.95Ag0.05MnO3 and La0.75Ag0.25MnO3

La_1−xAg_xMnO₃ samples were synthesized by standard sol-gel method with Ag concentrations of x=0.05 and 0.25. The samples from each concentration were pressed and sintered at 1000, 1200 and 1400 °C for 24 h in air for a systematic study. They were examined structurally by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) with Energy Dispersive Spectroscopy (EDS) and X-ray Diffraction (XRD) and magnetically by Magnetic Properties Measurements System (MPMS). AFM and SEM analyses show that surface morphology changes with Ag concentration and sintering temperature (T_S). It was observed that high temperature sintering leads Ag to leave material as determined from EDS analyses. XRD spectra exhibited that the crystal structure changes with Ag concentration while showing pronounced change with the sintering temperature. From the magnetic measurements, the Curie temperatures (T_C) and the isothermal magnetic entropy changes (−ΔSM) were calculated. It was observed that T_C increases with Ag concentration and decreases with T_S. The maximum −ΔSM was calculated to be 7.2 J/kg K under the field change of 5 T for the sample sintered at 1000 °C with x=0.25.     

Effect of oxidation temperature on microstructure, mechanical behaviors and surface morphology of nanocomposite Ti-Cx-Ny thin films

Two nanocomposite Ti-C_x-N_y thin films, TiC_0.95N_0.60 and TiC_2.35N_0.68, as well as one pure TiN, were deposited at 500 °C on Si(1 0 0) substrate by reactive unbalanced dc-magnetron sputtering. Oxidation experiments of these films were carried out in air at fixed temperatures in a regime of 250-600 °C with an interval of 50 °C. As-deposited and oxidized films were characterized and analyzed using X-ray diffraction (XRD), microindentation, Newton's ring methods and atomic force microscopy (AFM). It was found that the starting oxidation temperature of nanocomposite Ti-C_x-N_y thin films was 300 °C irrespective of the carbon content; however their oxidation rate strongly depended on their carbon content. Higher carbon content caused more serious oxidation. After oxidation, the film hardness value remained up to the starting oxidation temperature, followed by fast decrease with increasing heating temperature. The residual compressive stress did not show a similar trend with the hardness. Its value was first increased with increase of heating temperature, and got its maximum at the starting oxidation temperature. A decrease in residual stress was followed when heating temperature was further increased. The film surface roughness value was slightly increased with heating temperature till the starting oxidation temperature, a great decrease in surface roughness was followed with further increase of heating temperature.     

Surface analysis of heat-treated Mong Hsu rubies

Mong Hsu rubies have been heat treated in air at 1100, 1200, 1300, 1400, 1500 and 1600 °C. Their visual appearance and surface analysis (XPS) after each stage of heating have been monitored. The characteristic blue core regions of untreated ruby become slightly faded at 1100 °C and completely disappear at temperatures above 1500 °C. Trace amounts of Na, Ca, Si and Fe were found on the surface of untreated stones. Ti was first detected after heating to 1100 °C. Plots of detected surface concentrations of elements versus temperature show that the highest concentration of Fe occurred at 1300 °C while surface concentrations of Ti appeared to show two maxima near 1300 and 1500 °C. The results suggest that both the changing oxidation state of Fe²⁺ to Fe³⁺ and the diffusion of the Fe and Ti ions with temperature are responsible for the color changes through decreasing Fe²⁺ to Ti⁴⁺ charge transfer.     

Formation of Cr-modified silicide coatings on a Ti-Nb-Si based ultrahigh-temperature alloy by pack cementation process

Cr-modified silicide coatings were prepared on a Ti-Nb-Si based ultrahigh temperature alloy by Si-Cr co-deposition at 1250 °C, 1350 °C and 1400 °C for 5-20 h respectively. It was found that both coating structure and phase constituents changed significantly with increase in the co-deposition temperature and holding time. The outer layers in all coatings prepared at 1250 °C for 5-20 h consisted of (Ti,X)₅Si₃ (X represents Nb, Cr and Hf elements). (Ti,X)₅Si₄ was found as the only phase constituent in the intermediate layers in both coatings prepared at 1250 °C for 5 and 10 h, but the intermediate layers in the coatings prepared at 1250 °C for 15 and 20 h were mainly composed of (Ti,X)₅Si₃ phase that was derived from the decomposition of (Ti,X)₅Si₄ phase. In the coating prepared at 1350 °C for 5 h, single (Ti,X)₅Si₃ phase was found in its outmost layer, the same as that in the outer layers in the coatings prepared at 1250 °C; but in the coatings prepared at 1350 °C for 10-20 h, (Nb_1.95Cr_1.05)Cr₂Si₃ ternary phase was found in the outmost layers besides (Ti,X)₅Si₃ phase. In the coatings prepared at 1400 °C for 5-20 h, (Nb_1.95Cr_1.05)Cr₂Si₃ ternary phase was the single phase constituent in their outmost layers. The phase transformation (Ti,X)₅Si₄ → (Ti,X)₅Si₃ + Si occurred in the intermediate layers of the coatings prepared at 1350 and 1400 °C with prolonging co-deposition time, similar to the situation in the coatings prepared at 1250 °C for 15 and 20 h, but this transformation has been speeded up by increase in the co-deposition temperature. The transitional layers were mainly composed of (Ti,X)₅Si₃ phase in all coatings. The influence of co-deposition temperature on the diffusion ability of Cr atoms was greater than that of Si atoms in the Si-Cr co-deposition processes investigated. The growth of coatings obeyed inverse logarithmic laws at all three co-deposition temperatures. The Si-Cr co-deposition coating prepared at 1350 °C for 10 h showed a good oxidation resistance due to the formation of SiO₂ and Nb, Cr-doped TiO₂ scale after oxidation at 1250 °C for 10 h.     

Oxidation behavior and mechanism of powder metallurgy Rene95 nickel based superalloy between 800 and 1000 °C

The oxidation behaviors of powder metallurgy (PM) Rene95 Ni-based superalloy in the temperature range of 800-1000 °C are investigated in air by virtue of isothermal oxidation testing, X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy. The results show that the oxidation kinetics follows a square power law as the time extends at each temperature. The oxidation layers are detected to be composed of Cr₂O₃, TiO₂ and a small amount of NiCr₂O₄. The cross-sectional morphologies indicate that the oxidation layer consists of three parts: Cr-rich oxide layer, Cr and Ti duplex oxide layer, and oxidation affected zone. Theoretical analyses of oxidation kinetics and thicknesses of oxidation layers confirm that the activation energy of oxidation of PM Rene95 superalloy is 165.32 kJ mol⁻¹ and the oxidation process is controlled by diffusions of oxygen, Cr, and Ti. Accordingly, a diffusion-controlled mechanism is suggested to understand the oxidation behaviors of PM Rene95 superalloy at elevated temperatures.     

Low-temperature oxidation of SiC surfaces by supercritical water oxidation

The oxidation process on silicon carbide (SiC) surfaces is important for wide bandgap power semiconductor devices. We investigated SiC oxidation using supercritical water (SCW) at high pressure and temperature and found that a SiC surface can be easily oxidized at low temperature. The oxidation rate is 10 nm/min at 400 °C and 25 MPa, equal to that of conventional thermal dry oxidation at 1200 °C. Low-temperature oxidation should contribute to improved performance in future SiC devices. Moreover, we found that SCW oxidation at 400 °C forms a much smoother SiO₂/SiC interface than that obtained by conventional thermal dry oxidation. A higher oxidation rate and smaller microroughness are achieved at a lower oxidation temperature owing to the high density of oxidizers under SCW conditions.     

Effect of sintering temperature on structure and nonlinear dielectric properties of Ba0.6Sr0.4TiO3 ceramics prepared by the citrate method

Ba_0.6Sr_0.4TiO₃ ceramics were prepared by a citrate precursor method. The structure and nonlinear dielectric properties of the resulting ceramics were investigated within the sintering temperature range 1200-1300 °C. Adopting fine Ba_0.6Sr_0.4TiO₃ powder derived from the citrate method was confirmed to be effective in reducing the sintering temperatures required for densification. The ceramic specimens sintered at 1230-1280 °C presented relative densities of around 95%. A significant influence of sintering temperature on the microstructure and nonlinear dielectric properties was detected. The discrepancy in nonlinear dielectric behavior among the specimens sintered at different temperatures was qualitatively interpreted in terms of the dielectric response of polar micro-regions under bias electric field. The specimens sintered at 1230 and 1250 °C attained superior nonlinear dielectric properties, showing relatively low dielectric losses (tan δ) of 0.24% and 0.22% at 10 kHz together with comparatively large figure of merits (FOM) of 121 and 142 at 10 kHz and 20 kV/cm, respectively.     

Photoluminescence properties of powder and pulsed laser-deposited PbS nanoparticles in SiO2

Thin films of lead sulfide (PbS) nanoparticles embedded in an amorphous silica (SiO₂) host were grown on Si(1 0 0) substrates at different temperatures by the pulsed laser deposition (PLD) technique. Surface morphology and photoluminescence (PL) properties of samples were analyzed with scanning electron microscopy (SEM) and a 458 nm Ar⁺ laser, respectively. The PL data show a blue-shift from the normal emission at ∼3200 nm in PbS bulk to ∼560-700 nm in nanoparticulate PbS powders and thin films. Furthermore, the PL emission of the films was red-shifted from that of the powders at ∼560 to ∼660 nm. The blue-shifting of the emission wavelengths from 3200 to ∼560-700 nm is attributed to quantum confinement of charge carriers in the restricted volume of nanoparticles, while the red-shift between powders and thin-film PbS nanoparticles is speculated to be due to an increase in the defect concentration. The red-shift increased slightly with an increase in deposition temperature, which suggests that there has been a relative growth in particle sizes during the PLD of the films at higher temperatures. Generally, the PL emission of the powders was more intense than that of the films, although the intensity of some of the films was improved marginally by post-deposition annealing at 400 °C. This paper compares the PL properties of powder and pulsed laser-deposited thin films of PbS nanoparticles and the effects of deposition temperatures.     

Polycyclic aromatic hydrocarbons from the co-pyrolysis of catechol and 1,3-butadiene

In order to better understand the reactions responsible for the formation and growth of polycyclic aromatic hydrocarbons (PAH) from solid fuels, we have performed pyrolysis experiments in an isothermal laminar-flow reactor (at temperatures of 600-1000 °C and a fixed residence time of 0.3 s) with catechol, a model fuel representative of the aromatic moieties in coal and biomass fuels; 1,3-butadiene, a major product of biomass pyrolysis; and with catechol and 1,3-butadiene together (in a catechol-to-1,3-butadiene molar ratio of 0.83). No PAH of ?3 rings are produced at temperatures <700 °C, but PAH production becomes significant at temperatures ?800 °C. Analysis of the higher-temperature reaction products by high-pressure liquid chromatography with diode-array ultraviolet-visible absorbance detection has led to the identification of over 100 PAH (ranging in size to 10 fused aromatic rings) - 47 of which have never before been reported as products of any phenol-type fuel. Quantification of the product yields shows that a much higher percentage of fed carbon is converted to PAH in the catechol-only pyrolysis experiments than in the 1,3-butadiene-only pyrolysis experiments - a result attributable to catechol’s relatively labile O-H bond and capacity for generating oxygen-containing radicals, which accelerate both fuel conversion and the pyrolysis reactions leading to 1- and 2-ring aromatics and PAH. When the two fuels are co-pyrolyzed, the percentage of the total fed carbon converting to PAH is more than two times higher than the amount calculated for the hypothetical case of the two fuels together behaving as a linear combination of the two fuels individually. This elevated production of PAH from the co-pyrolysis experiments reflects not only the reaction-accelerating role of the oxygen-containing radicals but also the efficacy, as growth agents, of the C₂ - and especially the C₄ - species abundantly present in the catechol/1,3-butadiene co-pyrolysis environment.     

A combined study of the oxidation mechanism and resistance of AISI D6 steel exposed at high temperature environments

In this work it is thoroughly examined the oxidation performance of D6 tool steel under isochronal and isothermal oxidations. Isochronal oxidation tests, from ambient temperature to 1000 °C, revealed the oxidation rate of the coupons at different temperatures. Four different temperatures were selected for the isothermal oxidation test, which correspond to different oxidation rates. The oxidation and the examination of the samples were accomplished by thermogravimetric analysis (TG) in air with which the mass gain of the samples due to oxidation was simultaneously acquired. The samples were, also, examined by scanning electron microscopy (SEM), in order to observe their surface before and after the oxidation tests. X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR) were used for the accurate identification of the as formed oxides. The results revealed that in every case two distinct layers of oxides were formed while their composition was different, depending on the temperature of oxidation. Furthermore, the thickness of the as formed oxides is increased when the oxidation is performed at higher temperatures.